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1. 发明申请

US20100243440A1 Mechanism for continuously varying radial position of a magnetron 有权
标题翻译：连续变化磁控管径向位置的机理
公开(公告)号：US20100243440A1
公开(公告)日：2010-09-30
申请号：US12794452
申请日：2010-06-04
申请人： Keith A. Miller , Anantha K. Subramani , Maurice E. Ewert , Tza Jing Gung , Hong S. Yang , Vincent E. Burkhart
发明人： Keith A. Miller , Anantha K. Subramani , Maurice E. Ewert , Tza Jing Gung , Hong S. Yang , Vincent E. Burkhart
IPC分类号： C23C14/35
CPC分类号： H01J37/3455 , C23C14/35 , H01J37/3408
摘要： A continuously variable multi-position magnetron that is rotated about a central axis in back of a sputtering target at a freely selected radius. The position is dynamically controlled from the outside, for example, through a hydraulic actuator connected between a pivoting arm supporting the magnetron and an arm fixed to the shaft, by two coaxial shafts independent controllable from the outside and supporting the magnetron through a frog-leg mechanism, or a cable connected between the pivoting arms and moved by an external slider. The magnetron can be rotated at two, three, or more discrete radii or be moved in a continuous spiral pattern.
摘要翻译：一种连续可变的多位磁控管，其以可自由选择的半径在溅射靶的背面绕中心轴旋转。该位置从外部动态地控制，例如通过连接在支撑磁控管的枢转臂和固定到轴的臂之间的液压致动器，通过两个独立可从外部控制的同轴轴并且通过青蛙支撑磁控管机构或连接在枢转臂之间并由外部滑块移动的电缆。磁控管可以以两个，三个或更多个离散的半径旋转或以连续的螺旋图案移动。

2. 发明授权

US07736473B2 Magnetron having continuously variable radial position 有权
标题翻译：磁控管具有连续可变的径向位置
公开(公告)号：US07736473B2
公开(公告)日：2010-06-15
申请号：US11226858
申请日：2005-09-14
申请人： Keith A. Miller , Anantha K. Subramani , Maurice E. Ewert , Tza-Jing Gung , Hong S. Yang , Vincent E. Burkhart
发明人： Keith A. Miller , Anantha K. Subramani , Maurice E. Ewert , Tza-Jing Gung , Hong S. Yang , Vincent E. Burkhart
IPC分类号： C23C14/35
CPC分类号： H01J37/3455 , C23C14/35 , H01J37/3408
摘要： A continuously variable multi-position magnetron that is rotated about a central axis in back of a sputtering target at a freely selected radius. The position is dynamically controlled from the outside, for example, through a hydraulic actuator connected between a pivoting arm supporting the magnetron and an arm fixed to the shaft, by two coaxial shafts independent controllable from the outside and supporting the magnetron through a frog-leg mechanism, or a cable connected between the pivoting arms and moved by an external slider. The magnetron can be rotated at two, three, or more discrete radii or be moved in a continuous spiral pattern.
摘要翻译：一种连续可变的多位磁控管，其以可自由选择的半径在溅射靶的背面绕中心轴旋转。该位置从外部动态地控制，例如通过连接在支撑磁控管的枢转臂和固定到轴的臂之间的液压致动器，通过两个独立可从外部控制的同轴轴并且通过青蛙支撑磁控管机构或连接在枢转臂之间并由外部滑块移动的电缆。磁控管可以以两个，三个或更多个离散的半径旋转或以连续的螺旋图案移动。

3. 发明授权

US08685215B2 Mechanism for continuously varying radial position of a magnetron 有权
标题翻译：连续变化磁控管径向位置的机理
公开(公告)号：US08685215B2
公开(公告)日：2014-04-01
申请号：US12794452
申请日：2010-06-04
申请人： Keith A. Miller , Anantha K. Subramani , Maurice E. Ewert , Tza-Jing Gung , Hong S. Yang , Vincent E. Burkhart
发明人： Keith A. Miller , Anantha K. Subramani , Maurice E. Ewert , Tza-Jing Gung , Hong S. Yang , Vincent E. Burkhart
IPC分类号： C23C14/35
CPC分类号： H01J37/3455 , C23C14/35 , H01J37/3408
摘要： A continuously variable multi-position magnetron that is rotated about a central axis in back of a sputtering target at a freely selected radius. The position is dynamically controlled from the outside, for example, through a hydraulic actuator connected between a pivoting arm supporting the magnetron and an arm fixed to the shaft, by two coaxial shafts independent controllable from the outside and supporting the magnetron through a frog-leg mechanism, or a cable connected between the pivoting arms and moved by an external slider. The magnetron can be rotated at two, three, or more discrete radii or be moved in a continuous spiral pattern.
摘要翻译：一种连续可变的多位磁控管，其以可自由选择的半径在溅射靶的背面绕中心轴旋转。该位置从外部动态地控制，例如通过连接在支撑磁控管的枢转臂和固定到轴的臂之间的液压致动器，通过两个独立可从外部控制的同轴轴并且通过青蛙支撑磁控管机构或连接在枢转臂之间并由外部滑块移动的电缆。磁控管可以以两个，三个或更多个离散的半径旋转或以连续的螺旋图案移动。

4. 发明授权

US07018515B2 Selectable dual position magnetron 有权
标题翻译：可选双位磁控管
公开(公告)号：US07018515B2
公开(公告)日：2006-03-28
申请号：US10949735
申请日：2004-09-23
申请人： Tza-Jing Gung , Hong S. Yang , Anantha K. Subramani , Maurice E. Ewert , Keith A. Miller , Vincent E. Burkhart
发明人： Tza-Jing Gung , Hong S. Yang , Anantha K. Subramani , Maurice E. Ewert , Keith A. Miller , Vincent E. Burkhart
IPC分类号： C23C14/35
CPC分类号： H01J37/3455 , C23C14/35 , H01J37/3408
摘要： A dual-position magnetron that is rotated about a central axis in back of a sputtering target, particularly for sputtering an edge of a target of a barrier material onto a wafer and cleaning material redeposited at a center of the target. During target cleaning, wafer bias is reduced. In one embodiment, an arc-shaped magnetron is supported on a pivot arm pivoting on the end of a bracket fixed to the rotary shaft. A spring biases the pivot arm such that the magnetron is urged towards and overlies the target center. Centrifugal force at increased rotation rate overcomes the spring bias and shift the magnetron to an outer position with the long magnetron dimension aligned with the target edge. Mechanical stops prevent excessive movement in either direction. Other mechanisms include linear slides and actuators.
摘要翻译：一种双位磁控管，其围绕溅射靶的背面的中心轴旋转，特别是用于将阻挡材料的靶的边缘溅射到晶片上，并且清理物质再沉积在靶的中心。在目标清洁期间，晶片偏置减小。在一个实施例中，弧形磁控管被支撑在枢转臂上，枢转臂在固定到旋转轴的支架的端部上枢转。弹簧偏压枢转臂，使得磁控管被推向目标中心并覆盖在目标中心上方。提高旋转速度的离心力克服了弹簧偏压，并将磁控管移动到外部位置，长磁导管尺寸与目标边缘对齐。机械停止可防止任何方向上的过度运动。其他机构包括线性滑块和致动器。

5. 发明申请

US20090308732A1 APPARATUS AND METHOD FOR UNIFORM DEPOSITION 审中-公开
标题翻译：用于均匀沉积的装置和方法
公开(公告)号：US20090308732A1
公开(公告)日：2009-12-17
申请号：US12482713
申请日：2009-06-11
申请人： Yong Cao , Maurice E. Ewert , Xianmin Tang , Keith A. Miller , Daniel C. Lubben , Umesh M. Kelkar , Tza-Jing Gung , Anantha K. Subramani
发明人： Yong Cao , Maurice E. Ewert , Xianmin Tang , Keith A. Miller , Daniel C. Lubben , Umesh M. Kelkar , Tza-Jing Gung , Anantha K. Subramani
IPC分类号： C23C14/34
CPC分类号： C23C14/35 , C23C14/046 , H01J37/34 , H01J37/3447
摘要： Embodiments of the present invention generally relate to an apparatus and method for uniform sputter depositing of materials into the bottom and sidewalls of high aspect ratio features on a substrate. In one embodiment, a sputter deposition system includes a collimator that has apertures having aspect ratios that decrease from a central region of the collimator to a peripheral region of the collimator. In one embodiment, the collimator is coupled to a grounded shield via a bracket member that includes a combination of internally and externally threaded fasteners. In another embodiment, the collimator is integrally attached to a grounded shield. In one embodiment, a method of sputter depositing material includes pulsing the bias on the substrate support between high and low values.
摘要翻译：本发明的实施例一般涉及用于均匀溅射沉积到衬底上的高纵横比特征的底部和侧壁中的装置和方法。在一个实施例中，溅射沉积系统包括准直器，其具有从准直器的中心区域到准直器的外围区域的纵横比减小的孔。在一个实施例中，准直器经由包括内螺纹紧固件和外螺纹紧固件的组合的支架构件联接到接地屏蔽件。在另一个实施例中，准直器一体地附接到接地屏蔽。在一个实施例中，溅射沉积材料的方法包括在高和低值之间使衬底支撑上的偏压脉动。

6. 发明授权

US08580094B2 Magnetron design for RF/DC physical vapor deposition 有权
标题翻译：用于RF / DC物理气相沉积的磁控管设计
公开(公告)号：US08580094B2
公开(公告)日：2013-11-12
申请号：US13163817
申请日：2011-06-20
申请人： Rongjun Wang , Sally Lou , Muhammad Rasheed , Jianxin Lei , Xianmin Tang , Srinivas Gandikota , Ryan Hanson , Tza-Jing Gung , Keith A. Miller , Thanh X. Nguyen
发明人： Rongjun Wang , Sally Lou , Muhammad Rasheed , Jianxin Lei , Xianmin Tang , Srinivas Gandikota , Ryan Hanson , Tza-Jing Gung , Keith A. Miller , Thanh X. Nguyen
IPC分类号： C23C14/35
CPC分类号： C23C14/35 , H01J37/3408 , H01J37/345 , H01J37/3461
摘要： Methods and apparatus to improve target life and deposition uniformity in PVD chambers are provided herein. In some embodiments, a magnetron assembly includes a shunt plate having a central axis, the shunt plate rotatable about the central axis, a first open loop magnetic pole arc coupled to the shunt plate at a first radius from the central axis, and a second open loop magnetic pole arc coupled the shunt plate at a first distance from the first open loop magnetic pole arc, wherein at least one of the first radius varies along the first open loop magnetic pole arc or the first distance varies along the second open loop magnetic pole arc. In some embodiments, a first polarity of the first open loop magnetic pole arc opposes a second polarity of the second open loop magnetic pole arc.
摘要翻译：本文提供了改善PVD室中的目标寿命和沉积均匀性的方法和装置。在一些实施例中，磁控管组件包括具有中心轴线的分流板，分流板可围绕中心轴线旋转，第一开环磁极电弧在与中心轴线成第一半径处耦合到分流板，第二开路环形磁极以与第一开环磁极弧成第一距离的方式将分流板电弧耦合，其中第一半径中的至少一个沿第一开环磁极弧变化，或者第一距离沿第二开环磁极变化弧。在一些实施例中，第一开环磁极的第一极性与第二开环磁极的第二极性相反。

7. 发明授权

US07569125B2 Shields usable with an inductively coupled plasma reactor 有权
标题翻译：可用于电感耦合等离子体反应器的屏蔽
公开(公告)号：US07569125B2
公开(公告)日：2009-08-04
申请号：US11124524
申请日：2005-05-05
申请人： Tza-Jing Gung , Xianmin Tang , John Forster , Peijun Ding , Marc Schweitzer , Keith A. Miller , Ilya Lavitsky
发明人： Tza-Jing Gung , Xianmin Tang , John Forster , Peijun Ding , Marc Schweitzer , Keith A. Miller , Ilya Lavitsky
IPC分类号： C23C14/35
CPC分类号： H01J37/3402 , C23C14/046 , C23C14/345 , C23C14/3457 , C23C14/358 , H01J37/321 , H01J37/32623 , H01J37/3408 , H01J37/3411 , H01J37/3441 , H01J2237/3327 , H01L21/2855 , H01L21/76843 , H01L21/76877
摘要： A one-piece inner shield usable in a plasma sputter reactor and extending from the target to the pedestal with a smooth inner surface and supported by an annular flange in a middle portion of the shield. The shield may be used to support the RF coil used in exciting the plasma. An outer shield includes an outwardly extending flange on its end alignable with the inner shield flange, holes in correspondence to recesses in the inner shield for standoffs for the RF coil, and circumferentially arranged gas flow holes.
摘要翻译：可用于等离子体溅射反应器的一体式内屏蔽件，并且从目标件延伸到具有光滑内表面的基座并由屏蔽件的中间部分中的环形凸缘支撑。屏蔽可用于支持用于激发等离子体的RF线圈。外屏蔽件包括在其与内屏蔽凸缘对准的端部上的向外延伸的凸缘，对应于用于RF线圈的支架的内屏蔽件中的凹部的孔和周向布置的气体流动孔。

8. 发明授权

US07041201B2 Sidewall magnet improving uniformity of inductively coupled plasma and shields used therewith 有权
标题翻译：侧壁磁体改善了与其一起使用的电感耦合等离子体和屏蔽层的均匀性
公开(公告)号：US07041201B2
公开(公告)日：2006-05-09
申请号：US10608306
申请日：2003-06-26
申请人： Tza-Jing Gung , Xianmin Tang , John Forster , Peijun Ding , Marc Schweitzer , Keith A. Miller , Ilya Lavitsky
发明人： Tza-Jing Gung , Xianmin Tang , John Forster , Peijun Ding , Marc Schweitzer , Keith A. Miller , Ilya Lavitsky
IPC分类号： C23C14/35
CPC分类号： H01J37/3402 , C23C14/046 , C23C14/345 , C23C14/3457 , C23C14/358 , H01J37/321 , H01J37/32623 , H01J37/3408 , H01J37/3411 , H01J37/3441 , H01J2237/3327 , H01L21/2855 , H01L21/76843 , H01L21/76877
摘要： One aspect of the invention includes an auxiliary magnet ring positioned outside of the chamber wall of a plasma sputter reactor and being disposed at least partially radially outwardly of an RF coil used to inductively generate a plasma, particularly for sputter etching the substrate being sputter deposited. Thereby, a magnetic barrier prevents the plasma from leaking outwardly to the coil and improves the uniformity of sputter etching. The magnetic field also acts as a magnetron when the coil, when made of the same material as the primary target, is being used as a secondary target. Another aspect of the invention includes a one-piece inner shield extending from the target to the pedestal with a smooth inner surface and supported by an annular flange in a middle portion of the shield. The shield may be used to support the RF coil.
摘要翻译：本发明的一个方面包括位于等离子体溅射反应器的室壁外部的辅助磁环，并且至少部分地设置在用于感应地产生等离子体的RF线圈的径向外侧，特别是用于溅射蚀刻被溅射沉积的衬底。因此，磁屏障防止等离子体向外泄漏到线圈并提高溅射蚀刻的均匀性。当线圈由与主要靶材相同的材料制成时，磁场也用作磁控管，作为次级靶。本发明的另一方面包括从目标件延伸到具有光滑的内表面并由屏蔽件的中间部分中的环形凸缘支撑的一体式内屏蔽件。屏蔽可用于支持RF线圈。

9. 发明授权

US08920613B2 Offset magnet compensation for non-uniform plasma 有权
标题翻译：用于不均匀等离子体的偏移磁体补偿
公开(公告)号：US08920613B2
公开(公告)日：2014-12-30
申请号：US11669763
申请日：2007-01-31
申请人： Christopher Boitnott , Keith A. Miller
发明人： Christopher Boitnott , Keith A. Miller
IPC分类号： C23C14/34 , C23C14/35 , C23C14/04 , H01J37/34
CPC分类号： C23C14/35 , C23C14/046 , H01J37/3408 , H01J37/3452 , H01J37/3458
摘要： A non-axisymmetric electromagnet coil used in plasma processing in which at least one electromagnet coil is not symmetric with the central axis of the plasma processing chamber with which it is used but is symmetric with an axis offset from the central axis. When placed radially outside of an RF coil, it may reduce the azimuthal asymmetry in the plasma produced by the RF coil. Axisymmetric magnet arrays may include additional axisymmetric electromagnet coils. One axisymmetric coil is advantageously placed radially inside of the non-axisymmetric coil to carry opposed currents. The multiple electromagnet coils may be embedded in a molded encapsulant having a central bore about a central axis providing the axisymmetry of the coils.
摘要翻译：用于等离子体处理的非轴对称电磁线圈，其中至少一个电磁线圈与其使用的等离子体处理室的中心轴不对称，但是与轴偏离中心轴对称。当径向放置在RF线圈外部时，可以减小由RF线圈产生的等离子体的方位不对称性。轴对称磁体阵列可以包括附加的轴对称电磁体线圈。一个轴对称线圈有利地放置在非轴对称线圈的内侧以承载相对的电流。多个电磁体线圈可以嵌入模制的密封剂中，其具有围绕中心轴线的中心孔，从而提供线圈的轴对称性。

10. 发明授权

US08187416B2 Interior antenna for substrate processing chamber 有权
标题翻译：用于衬底处理室的内部天线
公开(公告)号：US08187416B2
公开(公告)日：2012-05-29
申请号：US11134033
申请日：2005-05-20
申请人： Keith A. Miller , Genhua Xu , Shengde Zhong , Mahendra Bhagwat Lokhande
发明人： Keith A. Miller , Genhua Xu , Shengde Zhong , Mahendra Bhagwat Lokhande
IPC分类号： C23C16/00 , H01L21/306
CPC分类号： H01J37/3408 , B08B7/0035 , H01J37/321 , H01J37/32495
摘要： An antenna for coupling RF energy to a plasma in a process chamber having a wall comprises a coil having a face exposed to the plasma in the chamber. A plurality of standoffs support the coil at a set spacing from the wall of the process chamber, at least one standoff comprising a terminal thorough which electrical power is applied to the coil from an external power source. The terminal comprises a conductor receptacle having a first length L1 and a jacket around the conductor receptacle, the jacket having a second length L2. The length L1 is larger than the length L2. A conductor cup is provided about the standoff having the terminal.
摘要翻译：用于将RF能量耦合到具有壁的处理室中的等离子体的天线包括具有暴露于腔室中的等离子体的面的线圈。多个支座以距离处理室的壁一定距离的方式支撑线圈，至少一个支架包括端子，通过从外部电源向线圈施加电力的端子。端子包括具有第一长度L1的导体插座和围绕导体插座的护套，护套具有第二长度L2。长度L1大于长度L2。围绕具有端子的支座设置导体杯。

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