专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5714781A Semiconductor device having a gate electrode in a grove and a diffused region under the grove 失效
标题翻译：半导体器件具有沟槽中的栅电极和沟槽下的扩散区域
公开(公告)号：US5714781A
公开(公告)日：1998-02-03
申请号：US638388
申请日：1996-04-26
申请人： Tsuyoshi Yamamoto , Masami Naito , Takeshi Fukazawa
发明人： Tsuyoshi Yamamoto , Masami Naito , Takeshi Fukazawa
IPC分类号： H01L21/336 , H01L29/08 , H01L29/423 , H01L29/78 , H01L29/76 , H01L29/94
CPC分类号： H01L29/7813 , H01L29/0847 , H01L29/42368
摘要： A power MOSFET having a groove for forming a channel improved for shortening the switching time and increasing the dielectric breakdown strength of the gate oxide film is disclosed. The power MOSFET includes a concave structure in which a gate oxide film at a groove bottom is thickened. Namely, since the gate oxide film between a gate electrode and a first conductivity type semiconductor layer is thick, the capacitance of the oxide film therebetween is reduced. Therefore, the input and output capacitance of the gate oxide film can be reduced, and switching loss can be also reduced since the switching time can be shortened. Further, greater dielectric breakdown strength of the gate oxide film can be obtained as a result of the thickened gate oxide film at the groove bottom.
摘要翻译：公开了一种功率MOSFET，其具有用于形成通道的沟槽，用于缩短开关时间并增加栅极氧化膜的介电击穿强度。功率MOSFET包括凹槽结构，其中凹槽底部的栅氧化膜被加厚。也就是说，由于栅电极和第一导电类型半导体层之间的栅极氧化膜厚，所以其之间的氧化膜的电容减小。因此，可以减小栅极氧化膜的输入和输出电容，并且可以减少开关损耗，因为可以缩短开关时间。此外，作为沟槽底部的增厚的栅极氧化膜的结果，可以获得更大的栅极氧化膜的介电击穿强度。

2. 发明授权

US07197742B2 Software module for integration 有权
标题翻译：集成软件模块
公开(公告)号：US07197742B2
公开(公告)日：2007-03-27
申请号：US10258304
申请日：2002-02-07
申请人： Hiroshi Arita , Akira Ikezoe , Kiyoshi Yagi , Minoru Takahashi , Takeshi Fukazawa
发明人： Hiroshi Arita , Akira Ikezoe , Kiyoshi Yagi , Minoru Takahashi , Takeshi Fukazawa
IPC分类号： G06F9/44 , G06F9/45
CPC分类号： G06F9/44521
摘要： The present invention relates to a software module, and, especially, relates to a software module for integration having severe restriction on the available memory amount and the real-time operation, and provides a software module for integration having increased inheritance in software. This is a software module for integration, integrated as a software module within a device to control the device. The software module has a public module for updating a public data value, an intermediate module for converting the data value in a predetermined data format updated in the public module into a data value in a predetermined data format adaptable to a referencing side, and a referencing module for referencing the data value in a predetermined data format converted by the intermediate module. The publication and referencing process can be implemented among the modules.
摘要翻译：软件模块技术领域本发明涉及一种软件模块，特别涉及一种用于集成的软件模块，其对可用存储量和实时操作具有严格的限制，并且提供了一种用于集成的软件模块，其具有增加的软件继承性。这是用于集成的软件模块，集成为设备内的软件模块以控制设备。软件模块具有用于更新公共数据值的公共模块，用于将以公共模块中更新的预定数据格式的数据值转换为可适应于参考侧的预定数据格式的数据值的中间模块，以及参考模块，用于以由中间模块转换的预定数据格式引用数据值。可以在模块之间实现发布和参考过程。

3. 发明授权

US4449039A Ceramic heater 失效
标题翻译：陶瓷加热器
公开(公告)号：US4449039A
公开(公告)日：1984-05-15
申请号：US415547
申请日：1982-09-07
申请人： Takeshi Fukazawa , Shunzo Yamaguchi , Morihiro Atsumi
发明人： Takeshi Fukazawa , Shunzo Yamaguchi , Morihiro Atsumi
IPC分类号： H05B3/10 , H05B3/14
CPC分类号： H05B3/141 , H05B3/10
摘要： A ceramic heater having a heating element of a sintered mixture comprising alumina and titanium nitride and/or titanium carbide. The heating element has a specific resistance in a range from 10.sup.-4 to several .OMEGA.cm. The ceramic heater may have supporting substrates of insulating materials with which the heating element is covered. The ceramic heater can be used at a temperature above 1000.degree. C.
摘要翻译：一种具有包含氧化铝和氮化钛和/或碳化钛的烧结混合物的加热元件的陶瓷加热器。加热元件的电阻在10-4到几欧姆厘米之间。陶瓷加热器可以具有覆盖加热元件的绝缘材料的支撑基板。陶瓷加热器可以在1000℃以上的温度下使用

4. 发明授权

US5877095A Method of fabricating a semiconductor device having a silicon nitride film made of silane, ammonia and nitrogen 失效
标题翻译：制造具有由硅烷，氨和氮制成的氮化硅膜的半导体器件的方法
公开(公告)号：US5877095A
公开(公告)日：1999-03-02
申请号：US698841
申请日：1996-08-16
申请人： Muneo Tamura , Takeshi Yamauchi , Katuhide Niwa , Takeshi Fukazawa , Akira Kuroyanagi
发明人： Muneo Tamura , Takeshi Yamauchi , Katuhide Niwa , Takeshi Fukazawa , Akira Kuroyanagi
IPC分类号： H01L21/8247 , C23C16/34 , H01L21/314 , H01L21/318 , H01L23/31 , H01L27/115 , H01L29/788 , H01L29/792 , H01L21/306
CPC分类号： C23C16/347 , H01L21/3185 , H01L23/3171 , H01L2924/0002
摘要： A semiconductor device includes a semiconductor element. A silicon nitride film covers the semiconductor element. The silicon nitride film is made of Si.sub.X N.sub.Y H.sub.Z, where X, Y, and Z denote atomic fractions of Si, N, and H resptively. The silicon nitride film relates to an optical absorption edge wavelength shorter than 254 nm. A mean area of regions surrounded by crystal-like grain boundaries at a surface of the silicon nitride film is equal to 4.5.times.10.sup.4 nm.sup.2 or more. The semiconductor element may include a memory element from which information can be erased by exposure to ultraviolet rays.
摘要翻译：半导体器件包括半导体元件。氮化硅膜覆盖半导体元件。氮化硅膜由SiXNYHZ制成，其中X，Y和Z表示Si，N和H的原子级分。氮化硅膜涉及短于254nm的光吸收边缘波长。在氮化硅膜表面的晶状晶界包围的区域的平均面积为4.5×10 4 nm 2以上。半导体元件可以包括可通过暴露于紫外线而从其中擦除信息的存储元件。

5. 发明授权

US4653443A Thermoelectric generating composite functioning apparatus 失效
标题翻译：热电发生复合功能装置
公开(公告)号：US4653443A
公开(公告)日：1987-03-31
申请号：US678795
申请日：1984-12-05
申请人： Takeshi Fukazawa , Hironari Kuno , Naoto Okabe , Kunihiko Hara
发明人： Takeshi Fukazawa , Hironari Kuno , Naoto Okabe , Kunihiko Hara
IPC分类号： H01L35/00 , F02B3/06 , F02P19/02 , F23Q7/00
CPC分类号： F02P19/028 , F23Q7/001 , F02B3/06 , F02P19/025 , Y02T10/166
摘要： A thermoelectric generating composite functioning apparatus used as a glow plug in a diesel engine has sintered semiconductor elements respectively formed in the shape of a bar of N-type and P-type thermoelectric semiconductor materials. The N-type and P-type semiconductor elements are provided oppositely with a gap between them, and their end portions are put in mutual contact to form a P-N junction. A low thermal conductivity insulator is filled in the interval between the N-type and the P-type semiconductor elements. The N-type and P-type semiconductor elements provided in the P-N junction state are contained through the insulator in a housing. Lead terminals connected to the N-type and P-type semiconductor elements are formed in the housing. The apparatus may provide heat to the combustion chamber, or generate electricity from the heat in the combustion chamber.
摘要翻译：在柴油发动机中用作电热塞的热电发生复合功能装置具有分别形成为N型和P型热电半导体材料棒的形状的烧结半导体元件。 N型和P型半导体元件与它们之间的间隙相对地设置，并且它们的端部相互接触以形成P-N结。在N型和P型半导体元件之间的间隔中填充有低导热绝缘体。设置在P-N结状态的N型和P型半导体元件通过壳体中的绝缘体容纳。连接到N型和P型半导体元件的引线端子形成在壳体中。该设备可以向燃烧室提供热量，或者从燃烧室中的热量发电。

6. 发明授权

US5592004A Silicon nitride film having a short absorption wavelength and surrounding crystal-like grain boundaries 失效
标题翻译：具有短的吸收波长并且包围晶体状晶界的氮化硅膜
公开(公告)号：US5592004A
公开(公告)日：1997-01-07
申请号：US534976
申请日：1995-09-28
申请人： Muneo Tamura , Takeshi Yamauchi , Katuhide Niwa , Takeshi Fukazawa , Akira Kuroyanagi , Tooru Yamaoka
发明人： Muneo Tamura , Takeshi Yamauchi , Katuhide Niwa , Takeshi Fukazawa , Akira Kuroyanagi , Tooru Yamaoka
IPC分类号： H01L21/8247 , C23C16/34 , H01L21/314 , H01L21/318 , H01L23/31 , H01L27/115 , H01L29/788 , H01L29/792 , H01L29/06 , H01L29/78
CPC分类号： C23C16/347 , H01L21/3185 , H01L23/3171 , H01L2924/0002
摘要： A semiconductor device includes a semiconductor element. A silicon nitride film covers the semiconductor element. The silicon nitride film is made of Si.sub.X N.sub.Y H.sub.Z, where X, Y, and Z denote atomic fractions of Si, N, and H respectively. The silicon nitride film relates to an optical absorption edge wavelength shorter than 254 nm. A mean area of regions surrounded by crystal-like grain boundaries at a surface of the silicon nitride film is equal to 4.5.times.10.sup.4 nm.sup.2 or more. The semiconductor element may include a memory element from which information can be erased by exposure to ultraviolet rays.
摘要翻译：半导体器件包括半导体元件。氮化硅膜覆盖半导体元件。氮化硅膜由SiXNYHZ制成，其中X，Y和Z分别表示Si，N和H的原子级分。氮化硅膜涉及短于254nm的光吸收边缘波长。在氮化硅膜表面的晶状晶界包围的区域的平均面积为4.5×10 4 nm 2以上。半导体元件可以包括可通过暴露于紫外线而从其中擦除信息的存储元件。

7. 发明授权

US4725742A Semiconductor integrated circuit having a tree circuit 失效
标题翻译：具有树电路的半导体集成电路
公开(公告)号：US4725742A
公开(公告)日：1988-02-16
申请号：US865977
申请日：1986-05-22
申请人： Hiroshi Tachimori , Hiroshi Fukuta , Takeshi Fukazawa , Takao Ohkubo , Osamu Takahashi
发明人： Hiroshi Tachimori , Hiroshi Fukuta , Takeshi Fukazawa , Takao Ohkubo , Osamu Takahashi
IPC分类号： G11C17/18 , G11C8/10 , G11C11/34 , G11C11/413 , H03K19/177 , H03K19/017 , H03K19/094
CPC分类号： G11C8/10
摘要： A semiconductor integrated circuit device has an address decoder which is constructed of a plurality of MOSFETs implemented in a switch tree. The switch tree includes first and second switch tree portions which are controlled `on` and `off` by the same input signals. A first switch branch in the first switch tree portion, which is constructed of a comparatively small number of MOSFETs, and a second switch branch in the second switch tree portion, which is constructed of a comparatively large number of MOSFETs, are controlled `one` and `off` by the same input signal, while a second switch branch in the first switch tree portion, which is constructed of a comparatively large number of MOSFETs, and a first switch branch in the second switch tree portion, which is constructed of a comparatively small number of MOSFETs, are controlled `on` and `off` by the same input signal. This construction is effective to lessen an increase in the number of MOSFETs which are to be coupled to the input lines of the address decoder.
摘要翻译：半导体集成电路器件具有由在开关树中实现的多个MOSFET构成的地址译码器。开关树包括通过相同输入信号被控制为“开”和“关”的第一和第二开关树部分。由较少数量的MOSFET构成的第一开关树部分中的第一开关分支和由相对大量的MOSFET构成的第二开关树部分中的第二开关分支被控制为“一” 并且通过相同的输入信号“关”，而由第二开关树部分构成的第一开关树部分中的第二开关分支和由第二开关树部分构成的第一开关分支，其由相对较少数量的MOSFET通过相同的输入信号被控制为“开”和“关”。这种结构对于减少要耦合到地址解码器的输入线的MOSFET的数量的增加是有效的。

8. 发明授权

US4505107A Exhaust gas cleaning apparatus 失效
标题翻译：废气净化装置
公开(公告)号：US4505107A
公开(公告)日：1985-03-19
申请号：US436439
申请日：1982-10-25
申请人： Shunzo Yamaguchi , Takeshi Fukazawa , Morihiro Atsumi
发明人： Shunzo Yamaguchi , Takeshi Fukazawa , Morihiro Atsumi
IPC分类号： F01N3/027 , F01N3/02
CPC分类号： F01N3/027 , F01N2390/02 , Y10S55/10 , Y10S55/30
摘要： In an exhaust gas cleaning apparatus a ceramic heating resistor has a lattice-shaped exhaust gas passage and is formed by extrusion. The ceramic heating resistor is fixed closely to the upper stream side of a filter which catches particulates contained in exhaust gas. This heating resistor is divided into a plurality of sections so that heating current is successively supplied to the divided sections.
摘要翻译：在废气净化装置中，陶瓷加热电阻器具有格子状的废气通道，并通过挤出形成。陶瓷加热电阻器紧密地固定在过滤器的上游侧，其捕获废气中所含的微粒。该加热电阻器被分成多个部分，使得加热电流被连续提供给分割部分。

9. 发明授权

US3963999A Ultra-high-frequency leaky coaxial cable 失效
标题翻译：超高频同轴电缆
公开(公告)号：US3963999A
公开(公告)日：1976-06-15
申请号：US581872
申请日：1975-05-29
申请人： Iwao Nakajima , Takayoshi Maezawa , Takeshi Fukazawa
发明人： Iwao Nakajima , Takayoshi Maezawa , Takeshi Fukazawa
IPC分类号： H01Q13/20 , H04B5/00 , H01P3/06 , H01Q13/10
CPC分类号： H01Q13/203 , H04B5/0018
摘要： A leaky coaxial cable for use at ultra-high-frequency has, between an outer conductor having slots for the radiation of electromagnetic wave and a protective sheath covering the outer conductor, a dielectric layer with electrically low loss, thereby decreasing the transmission loss. By arranging the slots of the outer conductor in a predetermined relation, it is possible to provide a leaky coaxial cable having a wide band characteristic and less transmission loss.

10. 发明授权

US07420246B2 Vertical type semiconductor device and method for manufacturing the same 有权
标题翻译：垂直型半导体器件及其制造方法
公开(公告)号：US07420246B2
公开(公告)日：2008-09-02
申请号：US11442206
申请日：2006-05-30
申请人： Shoji Ozoe , Tomofusa Shiga , Yoshifumi Okabe , Takaaki Aoki , Takeshi Fukazawa , Kimiharu Kayukawa
发明人： Shoji Ozoe , Tomofusa Shiga , Yoshifumi Okabe , Takaaki Aoki , Takeshi Fukazawa , Kimiharu Kayukawa
IPC分类号： H01L29/26
CPC分类号： H01L29/7813 , H01L21/2855 , H01L21/76838 , H01L29/1095 , H01L29/456 , H01L29/66734
摘要： A vertical type semiconductor device includes: a silicon substrate having a first surface and a second surface; a first electrode disposed on the first surface of the silicon substrate; and a second electrode disposed on the second surface of the silicon substrate. Current is capable of flowing between the first electrode and the second electrode in a vertical direction of the silicon substrate. The second surface of the silicon substrate includes a re-crystallized silicon layer. The second electrode includes an aluminum film so that the aluminum film contacts the re-crystallized silicon layer with ohmic contact.
摘要翻译：一种垂直型半导体器件包括：具有第一表面和第二表面的硅衬底; 设置在所述硅衬底的第一表面上的第一电极; 以及设置在硅衬底的第二表面上的第二电极。电流能够在硅衬底的垂直方向上在第一电极和第二电极之间流动。硅衬底的第二表面包括再结晶的硅层。第二电极包括铝膜，使得铝膜与欧姆接触的再结晶硅层接触。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式