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1. 发明申请

US20090214081A1 APPARATUS AND METHOD FOR DETECTING OBJECT 有权
标题翻译：检测对象的装置和方法
公开(公告)号：US20090214081A1
公开(公告)日：2009-08-27
申请号：US12390745
申请日：2009-02-23
申请人： Tsuyoshi NAKANO , Susumu Kubota , Yasukazu Okamoto
发明人： Tsuyoshi NAKANO , Susumu Kubota , Yasukazu Okamoto
IPC分类号： G06K9/00
CPC分类号： G06K9/00785 , G06T7/248 , G06T2207/10021 , G06T2207/30236
摘要： A disparity profile indicating a relation between a perpendicular position on time series images and a disparity on a target monitoring area based on an arrangement of a camera is calculated. Processing areas are set, by setting a height of each of the processing areas using a length at the bottom of the image obtained by converting a reference value of a height of an object according to the profile, while setting a position of each bottom of processing areas on the image. An object having a height higher than a certain height with respect to the monitoring area, unify an object detection result in each processing area according to the disparity of the object, and detect the object of the whole monitoring area from each processing area is detected. Position and speed for the object detected by the object primary detection unit are estimated.
摘要翻译：计算出基于相机的布置的时间序列图像上的垂直位置与目标监视区域上的视差之间的关系的视差轮廓。通过使用通过根据轮廓转换对象的高度的参考值而获得的图像的底部的长度来设置每个处理区域的高度，同时设置每个处理区域的每个底部的位置图像上的区域。相对于监视区域具有高于一定高度的高度的物体，根据物体的不一致性，将每个处理区域中的物体检测结果统一起来，并且检测来自每个处理区域的整个监视区域的对象。估计由对象主检测单元检测到的对象的位置和速度。

2. 发明申请

US20120110854A1 ROTARY ELECTRIC SHAVER 审中-公开
标题翻译：旋转电动剃须刀
公开(公告)号：US20120110854A1
公开(公告)日：2012-05-10
申请号：US13290761
申请日：2011-11-07
申请人： Tsuyoshi NAKANO , Yoshiyuki MIMURA
发明人： Tsuyoshi NAKANO , Yoshiyuki MIMURA
IPC分类号： B26B19/14
CPC分类号： B26B19/143
摘要： A rotary electric shaver includes an outer cutter which has an upper surface with annular shaving faces, in which many hair-entry apertures are formed, and an inner cutter having small blades, which rotate in sliding contact with the lower surface of the outer cutter from below the shaving faces. The outer cutter (10) has a plurality of concentric annular shaving faces (16, 18), which are integrally formed therewith. The density of the hair-entry apertures (65) is varied in the circumferential direction of the plurality of annular shaving faces (16, 18). The rotary electric shaver increases the shaving area of the outer cutter to improve shaving efficiency and also restrains excessively close shaving thereby to protect skin even when the contact pressure of an area near the center of the outer cutter against skin increases.
摘要翻译：一种旋转式电动剃须刀，包括一个具有环形剃须面的上表面的外刀片，其中形成有许多毛发入口，以及具有小刀片的内刀片，其与外刀片的下表面滑动接触地旋转，在剃须面下面。外切割器（10）具有与其一体形成的多个同心环形剃须面（16,18）。毛发入口（65）的密度在多个环形剃须面（16,18）的圆周方向上变化。旋转式电动剃须刀增加了外刀片的剃刮面积，从而提高了剃须效率，并且还抑制了过度接近的剃刮，从而即使当外刀片的中心附近的区域的接触压力增加时也能保护皮肤。

3. 发明申请

US20120025271A1 SEMICONDUCTOR WAFER, METHOD OF PRODUCING SEMICONDUCTOR WAFER, METHOD OF JUDGING QUALITY OF SEMICONDUCTOR WAFER, AND ELECTRONIC DEVICE 有权
标题翻译：半导体波导，半导体波形的制造方法，半导体晶体的质量判定方法以及电子装置
公开(公告)号：US20120025271A1
公开(公告)日：2012-02-02
申请号：US13253614
申请日：2011-10-05
申请人： Tsuyoshi NAKANO
发明人： Tsuyoshi NAKANO
IPC分类号： H01L29/205 , H01L29/778 , H01L21/66 , H01L21/20
CPC分类号： H01L29/7786 , H01L29/66462 , H01L29/66856 , H01L29/7785 , H01L29/812
摘要： There is provided a high-performance compound semiconductor epitaxial wafer that has an improved linearity of the voltage-current characteristic, a producing method thereof, and a judging method thereof. Provided is a semiconductor wafer including a compound semiconductor that produces a two-dimensional carrier gas, a carrier supply semiconductor that supplies a carrier to the compound semiconductor, and a mobility lowering semiconductor that is disposed between the compound semiconductor and the carrier supply semiconductor and that has a mobility lowering factor that makes the mobility of the carrier in the mobility lowering semiconductor lower than the mobility of the carrier in the compound semiconductor.
摘要翻译：提供了具有改善的电压 - 电流特性的线性度的高性能化合物半导体外延晶片及其制造方法及其判断方法。提供了一种半导体晶片，其包括产生二维载气的化合物半导体，向化合物半导体提供载体的载流子供给半导体以及配置在化合物半导体和载流子供给半导体之间的迁移率降低半导体，具有使迁移率降低半导体中的载流子迁移率低于化合物半导体中的载流子迁移率的迁移率降低因子。

4. 发明申请

US20110281423A1 METHOD OF PRODUCING SEMICONDUCTOR WAFER AND SEMICONDUCTOR WAFER 有权
标题翻译：生产半导体晶体管和半导体晶体管的方法
公开(公告)号：US20110281423A1
公开(公告)日：2011-11-17
申请号：US13191173
申请日：2011-07-26
申请人： Junya HADA , Tsuyoshi NAKANO
发明人： Junya HADA , Tsuyoshi NAKANO
IPC分类号： H01L21/205
CPC分类号： H01L29/7785 , H01L21/0237 , H01L21/02381 , H01L21/02395 , H01L21/02463 , H01L21/02538 , H01L21/02543 , H01L21/02546 , H01L21/02576 , H01L21/0262
摘要： A method of producing a semiconductor wafer includes placing a base wafer within a reaction chamber, and epitaxially growing a p-type Group 3-5 compound semiconductor on the base wafer by supplying, into the reaction chamber, a Group 3 source gas consisting of an organometallic compound of a Group 3 element, a Group 5 source gas consisting of a compound of a Group 5 element, and an impurity gas including an impurity that is to be incorporated as a dopant into a semiconductor to serve as a donor. Here, during the epitaxial growth of the p-type Group 3-5 compound semiconductor, the flow rate of the impurity gas and the flow rate ratio of the Group 5 source gas to the Group 3 source gas are set so that the product N×d (cm−2) of the residual carrier concentration N (cm−3) and the thickness d (cm) of the p-type Group 3-5 compound semiconductor may be 8.0×1011 or less.
摘要翻译：一种制造半导体晶片的方法包括将基底晶片放置在反应室内，并通过向反应室内向基底晶片外延生长p型组3-5化合物半导体，形成由第3族元素的有机金属化合物，由第5族元素的化合物组成的第5族源气体和包含作为掺杂剂的杂质的杂质气体作为供体的半导体。这里，在p型组3-5化合物半导体的外延生长中，设定杂质气体的流量和第5族源气体与3族源气体的流量比，使得产物N× 残留载流子浓度N（cm-3）的d（cm-2）和p型组3-5化合物半导体的厚度d（cm）可以为8.0×1011以下。

5. 发明申请

US20120068224A1 METHOD OF PRODUCING SEMICONDUCTOR WAFER, AND SEMICONDUCTOR WAFER 审中-公开
标题翻译：生产半导体波长的方法和半导体波形
公开(公告)号：US20120068224A1
公开(公告)日：2012-03-22
申请号：US13267370
申请日：2011-10-06
申请人： Naohiro NISHIKAWA , Tsuyoshi NAKANO , Takayuki INOUE
发明人： Naohiro NISHIKAWA , Tsuyoshi NAKANO , Takayuki INOUE
IPC分类号： H01L29/36 , H01L21/02 , H01L21/20
CPC分类号： H01L21/02395 , H01L21/0237 , H01L21/02463 , H01L21/02543 , H01L21/02546 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L29/20 , H01L29/7371 , H01L29/7786 , H01L29/8605
摘要： A method of producing a semiconductor wafer suited to form types of devices such as HBT and FET on a single semiconductor wafer is provided. The method, by repeating steps including introducing, into a reaction chamber for forming a semiconductor by crystal growth, a first-impurity gas containing an element or a compound containing a first impurity atom as a constituent, thereby producing semiconductor wafers, includes, after introducing the first-impurity gas: taking out a produced semiconductor wafer; disposing a first semiconductor in the reaction chamber; introducing, into the reaction chamber, a second-impurity gas containing an element or a compound containing, as a constituent, a second impurity atom exhibiting a conduction type opposite to the conduction type of the first impurity atom within the first semiconductor; heating the first semiconductor in an atmosphere of the second-impurity gas; and forming a second semiconductor on the heated first semiconductor by crystal growth.
摘要翻译：提供了在单个半导体晶片上制造适合于形成诸如HBT和FET之类的器件的半导体晶片的方法。该方法通过重复步骤，包括通过晶体生长将用于形成半导体的反应室引入包含元素或含有第一杂质原子的化合物作为组分的第一杂质气体，从而制备半导体晶片，其中引入第一杂质气体：取出生产的半导体晶片; 在反应室中设置第一半导体; 向所述反应室中引入包含元素或化合物的第二杂质气体，所述元素或化合物含有与所述第一半导体内的所述第一杂质原子的导电类型相反的导电类型的第二杂质原子作为组分; 在第二杂质气体的气氛中加热第一半导体; 以及通过晶体生长在加热的第一半导体上形成第二半导体。

6. 发明申请

US20110233614A1 COMPOUND SEMICONDUCTOR EPITAXIAL SUBSTRATE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：化合物半导体外延基片及其制造方法
公开(公告)号：US20110233614A1
公开(公告)日：2011-09-29
申请号：US13154624
申请日：2011-06-07
申请人： Tsuyoshi NAKANO , Masahiko HATA
发明人： Tsuyoshi NAKANO , Masahiko HATA
IPC分类号： H01L29/778 , H01L21/20
CPC分类号： H01L29/205
摘要： A compound semiconductor epitaxial substrate having a pseudomorphic high electron mobility field effect transistor structure including an InGaAs layer as a strained channel layer and an AlGaAs layer containing n type impurities as a front side electron-donating layer, wherein said substrate contains an InGaP layer in an orderly state on the front side of the above described InGaAs layer as the strained channel layer.
摘要翻译：一种具有假型高电子迁移率场效应晶体管结构的化合物半导体外延衬底，其包括作为应变沟道层的InGaAs层和含有n型杂质的AlGaAs层作为前侧电子给予层，其中所述衬底包含InGaP层，在作为应变通道层的上述InGaAs层的正面上有序地形成。

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