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1. 发明授权

US5270250A Method of fabricating semiconductor substrate having very shallow impurity diffusion layer 失效
标题翻译：制造具有非常浅的杂质扩散层的半导体衬底的方法
公开(公告)号：US5270250A
公开(公告)日：1993-12-14
申请号：US812483
申请日：1991-12-23
申请人： Tsuyoshi Murai , Shigeaki Nakamura , Toshinori Konaka , Shigeru Mizuno
发明人： Tsuyoshi Murai , Shigeaki Nakamura , Toshinori Konaka , Shigeru Mizuno
IPC分类号： H01L21/265 , H01L21/00 , H01L21/223 , H01L21/26 , H01C21/265
CPC分类号： H01L21/67103 , H01L21/2236
摘要： A method of fabricating a semiconductor substrate is characterized in that a semiconductor wafer is disposed between a pair of opposite electrodes provided in an atmosphere of inert gas containing impurity gas which is held at a low pressure, a low-frequency alternating current is applied between the electrodes to induce plasma, and impurity ions are implanted into the surface of the semiconductor wafer to form a very shallow impurity diffusion layer.

2. 发明申请

US20100207312A1 Silicon Supporting Apparatus and Silicon Heating and Quenching Equipment Using the Same 审中-公开
标题翻译：硅配套设备和使用其的硅加热和淬火设备
公开(公告)号：US20100207312A1
公开(公告)日：2010-08-19
申请号：US12226860
申请日：2007-08-03
申请人： Tsuyoshi Murai , Toshinori Konaka
发明人： Tsuyoshi Murai , Toshinori Konaka
IPC分类号： B23Q3/00
CPC分类号： C30B29/06 , C30B15/00 , C30B35/00 , C30B35/002
摘要： The silicon supporting apparatus includes: a silicon-supporting part for supporting material silicon, which has a plurality of pipes arranged to be spaced apart from each other at predetermined intervals and each having an internal flow path for flowing a cooling medium L; at least one contact-preventing member made of titanium and provided to be contacted with an outer surface of the pipe to prevent the contact between the material silicon and the pipe; and a fixing member made of titanium and fixing the contact-preventing member to the pipe.
摘要翻译：硅支撑装置包括：用于支撑材料硅的硅支撑部分，其具有布置成以预定间隔彼此间隔开的多个管，并且每个具有用于使冷却介质L流动的内部流动路径; 至少一个由钛制成的接触防止构件，并被设置成与管的外表面接触以防止材料硅与管之间的接触; 以及由钛制成的固定构件，并将接触防止构件固定到管道上。

3. 发明授权

US5795401A Method for scrubbing substrate 失效
标题翻译：洗涤基材的方法
公开(公告)号：US5795401A
公开(公告)日：1998-08-18
申请号：US729077
申请日：1996-10-10
申请人： Takashi Itoh , Hiroyuki Saitoh , Haruyuki Kinami , Toshinori Konaka , Tsuyoshi Murai
发明人： Takashi Itoh , Hiroyuki Saitoh , Haruyuki Kinami , Toshinori Konaka , Tsuyoshi Murai
IPC分类号： B08B1/04 , B08B11/02 , B24B29/02 , B24B37/04 , B24B41/06 , H01L21/00 , H01L21/304 , H01L21/687 , B08B3/02
CPC分类号： H01L21/68728 , B08B1/04 , B08B11/02 , B24B29/02 , B24B37/04 , B24B37/30 , B24B41/06 , H01L21/02043 , H01L21/02057 , H01L21/0209 , H01L21/02096 , H01L21/67034 , H01L21/67046 , H01L21/67051 , H01L21/68735 , H01L21/68785
摘要： An improved method for scrubbing a substrate, the method including the step of scrubbing one face of the substrate with a cylindrical rotary brush while applying back pressure to the substrate by jetting a fluid for generating back pressure against the other face of the substrate.
摘要翻译：一种用于洗涤衬底的改进方法，所述方法包括以圆柱形旋转刷洗涤衬底的一面，同时通过喷射用于产生相对于衬底的另一面的背压的流体向衬底施加背压。

4. 发明申请

US20100255626A1 HIGH VISCOSITY ETCHANT AND A SELECTIVE ETCHING METHOD FOR PHOTOVOLTAIC ELEMENT SUBSTRATES OF SOLAR CELLS USING THE SAME 审中-公开
标题翻译：高粘度蚀刻剂和使用其的太阳能电池的光伏元件基板的选择性蚀刻方法
公开(公告)号：US20100255626A1
公开(公告)日：2010-10-07
申请号：US12743532
申请日：2007-12-20
申请人： Tsuyoshi Murai , Toshinori Konaka
发明人： Tsuyoshi Murai , Toshinori Konaka
IPC分类号： H01L31/18 , C09K13/00
CPC分类号： H01L31/1804 , C09K13/02 , H01L31/02008 , H01L31/022425 , H01L31/0504 , Y02E10/547 , Y02P70/521
摘要： The high viscosity etchant of the present invention comprises an etchant being an alkaline solution for etching a photovoltaic element substrate; a viscosity increasing additive derived from a plant for increasing a viscosity of the etchant. The selective etching method comprises applying the high viscosity etchant to a surface of the photovoltaic element substrate; reacting the high viscosity etchant and the photovoltaic element substrate by heating them; washing the photovoltaic element substrate with pure water.
摘要翻译：本发明的高粘度蚀刻剂包括作为用于蚀刻光伏元件基板的碱性溶液的蚀刻剂; 来自植物的粘度增加添加剂用于增加蚀刻剂的粘度。选择性蚀刻方法包括将高粘度蚀刻剂施加到光伏元件基板的表面; 通过加热它们使高粘度蚀刻剂和光电元件基板反应; 用纯水洗涤光伏元件基板。

5. 发明授权

US5465447A Apparatus for scrubbing substrate 失效
标题翻译：洗涤基材的设备
公开(公告)号：US5465447A
公开(公告)日：1995-11-14
申请号：US301562
申请日：1994-09-07
申请人： Takashi Itoh , Hiroyuki Saitoh , Haruyuki Kinami , Toshinori Konaka , Tsuyoshi Murai
发明人： Takashi Itoh , Hiroyuki Saitoh , Haruyuki Kinami , Toshinori Konaka , Tsuyoshi Murai
IPC分类号： B08B1/04 , B08B11/02 , B24B29/02 , B24B37/04 , B24B41/06 , H01L21/00 , H01L21/304 , H01L21/687 , B08B3/02
CPC分类号： H01L21/68728 , B08B1/04 , B08B11/02 , B24B29/02 , B24B37/04 , B24B37/30 , B24B41/06 , H01L21/02043 , H01L21/02057 , H01L21/0209 , H01L21/02096 , H01L21/67034 , H01L21/67046 , H01L21/67051 , H01L21/68735 , H01L21/68785
摘要： Improved method and apparatus for scrubbing a substrate are provided, the method including the step of scrubbing one face of the substrate with a cylindrical rotary brush while applying back pressure to the substrate by jetting a fluid for generating back pressure against the other face of the substrate.
摘要翻译：提供了用于洗涤衬底的改进的方法和设备，该方法包括以下步骤：用圆柱形旋转刷擦洗衬底的一面，同时通过喷射用于产生相对于衬底的另一面的背压的流体向衬底施加背压。

6. 发明申请

US20140239103A1 RAW SILICON CRUSHER 审中-公开
标题翻译：原始硅粉碎机
公开(公告)号：US20140239103A1
公开(公告)日：2014-08-28
申请号：US14348201
申请日：2011-09-29
申请人： Tsuyoshi Murai , Toshinori Konaka
发明人： Tsuyoshi Murai , Toshinori Konaka
IPC分类号： B02C23/00
CPC分类号： B02C23/00 , B02C1/04 , B02C1/10 , C01B33/02
摘要： A raw silicon crusher is provided which can mechanically crush raw silicon without reducing the purity thereof, and can suppress loss by pulverization. A first bed 12 includes a first case 22, a first crushing silicon member 20 having a portion protruding outward from an opening of the first case 22, and a first antifouling member 24 disposed between the first crushing silicon member 20 and the first case 22. A second bed 14 includes a second case 42, a second crushing silicon member 41 having a portion protruding outward from an opening of the second case 42, a pair of side silicon members 44 covering both sides of a space A between a pair of crushing surfaces 16 and 18, a second antifouling member 48 disposed between the second crushing silicon member 41 and the second case 42, and third antifouling members 49 disposed between the side silicon members 44 and side silicon cases 45. Thus, a raw silicon crusher 10 that resolves the above problem is provided.
摘要翻译：本发明提供一种原料硅粉碎机，其可以在不降低其纯度的情况下机械粉碎原料硅，并且可以通过粉碎抑制损失。第一床12包括第一壳体22，具有从第一壳体22的开口向外突出的部分的第一破碎硅构件20和设置在第一破碎硅构件20和第一壳体22之间的第一防污构件24。第二床14包括第二壳体42，具有从第二壳体42的开口向外突出的部分的第二破碎硅构件41，一对侧硅构件44，其覆盖在一对破碎表面之间的空间A的两侧如图16和图18所示，设置在第二破碎硅构件41和第二壳体42之间的第二防污构件48，以及设置在侧硅构件44和侧硅壳体45之间的第三防污构件49.因此，提供上述问题。

7. 发明授权

US08353472B2 Raw silicon crusher 失效
标题翻译：生硅破碎机
公开(公告)号：US08353472B2
公开(公告)日：2013-01-15
申请号：US13058380
申请日：2009-08-20
申请人： Tsuyoshi Murai , Toshinori Konaka
发明人： Tsuyoshi Murai , Toshinori Konaka
IPC分类号： B02C1/10
CPC分类号： C01B33/02 , B02C1/005 , B02C1/04 , B02C1/046
摘要： The raw silicon crusher comprises a pair of beds; and a pair of crushing surfaces on the beds crushing the quenched pure raw silicon by applying pressure; wherein each of the beds comprises a case; pure silicon members arranged inside of the case and protruding from the opening; a block of pure ice fixing the pure silicon members to the case, and each of the crushing surfaces comprises surfaces of ends of protrusions; and surface of the block of ice.
摘要翻译：原硅破碎机包括一对床; 床上的一对破碎表面通过施加压力来破碎淬火的纯生硅; 其中每个床包括壳体; 纯硅构件布置在壳体内并从开口突出; 将纯硅构件固定在壳体上的纯冰块，并且每个破碎表面包括突起端部的表面; 和冰块的表面。

8. 发明申请

US20110253823A1 RAW SILICON CRUSHER 失效
标题翻译：原始硅粉碎机
公开(公告)号：US20110253823A1
公开(公告)日：2011-10-20
申请号：US13058380
申请日：2009-08-20
申请人： Tsuyoshi Murai , Toshinori Konaka
发明人： Tsuyoshi Murai , Toshinori Konaka
IPC分类号： B02C1/02
CPC分类号： C01B33/02 , B02C1/005 , B02C1/04 , B02C1/046
摘要： The raw silicon crusher comprises a pair of beds; and a pair of crushing surfaces on the beds crushing the quenched pure raw silicon by applying pressure; wherein each of the beds comprises a case; pure silicon members arranged inside of the case and protruding from the opening; a block of pure ice fixing the pure silicon members to the case, and each of the crushing surfaces comprises surfaces of ends of protrusions; and surface of the block of ice.
摘要翻译：原硅破碎机包括一对床; 床上的一对破碎表面通过施加压力来破碎淬火的纯生硅; 其中每个床包括壳体; 纯硅构件布置在壳体内并从开口突出; 将纯硅构件固定在壳体上的纯冰块，并且每个破碎表面包括突起端部的表面; 和冰块的表面。

9. 发明申请

US20110217486A1 METHOD FOR PROCESSING A CHEMICAL VAPOR DEPOSITION (CVD) AND A CVD DEVICE USING THE SAME 审中-公开
标题翻译：用于处理化学气相沉积（CVD）的方法和使用其的CVD装置
公开(公告)号：US20110217486A1
公开(公告)日：2011-09-08
申请号：US13130539
申请日：2010-02-23
申请人： Tsuyoshi Murai , Toshinori Konaka , Masayuki Suzuki
发明人： Tsuyoshi Murai , Toshinori Konaka , Masayuki Suzuki
IPC分类号： C23C16/46 , C23C16/455 , C23C16/458 , C23C16/52
CPC分类号： C23C16/24 , C23C16/4401 , C23C16/46 , C30B25/10
摘要： A method for CVD processing, comprises the steps of: fixing both ends of a silicon substrate to a pair of electrode mounts; lowering a resistance value of the silicon substrate by raising temperature of the silicon substrate with heat from an outer heater provided outside the case; heating the silicon substrate to a temperature at which the CVD process can be started by applying electrical current, and lowering an atmosphere temperature in the CVD space by stopping the outer heater; and forming a thin film on a surface of the silicon substrate by injecting source gas into the CVD space, when the silicon substrate is heated to the temperature at which the CVD process can be started and the atmosphere temperature in the CVD space is lowered to a predetermined temperature.
摘要翻译：一种用于CVD处理的方法，包括以下步骤：将硅衬底的两端固定到一对电极座上; 通过从设置在壳体外部的外部加热器的热量升高硅衬底的温度来降低硅衬底的电阻值; 通过施加电流将硅衬底加热到能够开始CVD工艺的温度，并且通过停止外部加热器来降低CVD空间中的气氛温度; 并且通过将CVD气体注入到CVD空间中，在硅衬底的表面上形成薄膜，当将硅衬底加热到可以开始CVD工艺的温度并且将CVD空间中的气氛温度降低到预定温度。

10. 发明申请

US20110209693A1 SILICON HEATING FURNACE 审中-公开
标题翻译：硅加热炉
公开(公告)号：US20110209693A1
公开(公告)日：2011-09-01
申请号：US12672462
申请日：2007-08-06
申请人： Tsuyoshi Murai , Toshinori Konaka
发明人： Tsuyoshi Murai , Toshinori Konaka
IPC分类号： F24C1/00
CPC分类号： F27B17/0016 , C01B33/00 , C30B29/06 , C30B35/00 , F27D99/0006 , H01L21/67109 , Y02P20/124
摘要： The silicon heating furnace is constructed by combining two semi-cylindrical furnaces. Each of the semi-cylindrical furnaces has a semi-cylindrical housing, an insulator, heaters, and an isothermal material. Radial direction separation preventing members are arranged in inner side of both ends of circumferential direction of the housing to prevent a separation of the insulator to radial direction. End face of circumferential direction covers are fixed on the radial direction separation preventing members to cover the end faces of circumferential direction of the insulator. Cooling pipes for end faces of circumferential direction through which cooling water passed are arranged between the end faces of circumferential direction of the insulator and the end face of circumferential direction covers.
摘要翻译：硅加热炉通过组合两个半圆柱形炉来构造。每个半圆柱形炉具有半圆柱形壳体，绝缘体，加热器和等温材料。径向分离防止构件设置在壳体的圆周方向的两端的内侧，以防止绝缘体与径向分离。圆周方向盖的端面固定在径向隔离部件上以覆盖绝缘体的圆周方向的端面。冷却水通过的圆周方向的端面的冷却管配置在绝缘体的圆周方向的端面与圆周方向的端面之间。

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