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1. 发明授权

US08437375B2 Semiconductor laser element 有权
标题翻译：半导体激光元件
公开(公告)号：US08437375B2
公开(公告)日：2013-05-07
申请号：US12998518
申请日：2008-10-31
申请人： Tsuyoshi Fujimoto , Yumi Yamada , Yuji Yamagata , Tsuyoshi Saitoh , Manabu Katahira
发明人： Tsuyoshi Fujimoto , Yumi Yamada , Yuji Yamagata , Tsuyoshi Saitoh , Manabu Katahira
IPC分类号： H01S5/00
CPC分类号： H01S5/20 , H01S5/2009 , H01S5/2031 , H01S5/3213 , H01S2301/18
摘要： A semiconductor laser element may include an n-type clad layer; an n-type waveguide layer adjacent to the n-type clad layer; an n-type carrier blocking layer adjacent to the n-type waveguide layer; an active layer; and a p-type clad layer adjacent to the active layer. The n-type clad layer may have a bandgap width greater than a bandgap width of the n-type waveguide layer. The n-type carrier blocking layer may have a bandgap width greater than or equal to bandgap widths of the first and second barrier layers. The p-type clad layer may have a bandgap width greater than the bandgap widths of the first and second barrier layers and the bandgap width of the n-type waveguide layer. The active layer may include a quantum well layer and barrier layers.
摘要翻译：半导体激光元件可以包括n型覆盖层; 与n型覆盖层相邻的n型波导层; 与n型波导层相邻的n型载流子阻挡层; 活性层以及与有源层相邻的p型覆盖层。 n型覆盖层的带隙宽度可以大于n型波导层的带隙宽度。 n型载流子阻挡层的带隙宽度可以大于或等于第一和第二阻挡层的带隙宽度。 p型覆盖层的带隙宽度可以大于第一和第二阻挡层的带隙宽度和n型波导层的带隙宽度。有源层可以包括量子阱层和阻挡层。

2. 发明申请

US20110211608A1 SEMICONDUCTOR LASER ELEMENT 有权
标题翻译：半导体激光元件
公开(公告)号：US20110211608A1
公开(公告)日：2011-09-01
申请号：US12998518
申请日：2008-10-31
申请人： Tsuyoshi Fujimoto , Yumi Yamada , Yuji Yamagata , Tsuyoshi Saitoh , Manabu Katahira
发明人： Tsuyoshi Fujimoto , Yumi Yamada , Yuji Yamagata , Tsuyoshi Saitoh , Manabu Katahira
IPC分类号： H01S5/34
CPC分类号： H01S5/20 , H01S5/2009 , H01S5/2031 , H01S5/3213 , H01S2301/18
摘要： A semiconductor laser element includes an active layer, an n-type carrier blocking layer arranged so as to be adjacent to the active layer and having a bandgap width that is equal to or greater than those of barrier layers, an n-type waveguide layer arranged on a side opposite to a side of the n-type carrier-blocking layer on which the active layer is arranged, so as to be adjacent to the n-type carrier blocking layer, an n-type clad layer arranged on a side opposite to a side of the n-type waveguide layer on which the active layer is arranged, so as to be adjacent to the n-type waveguide layer, and having a bandgap width that is greater than that of the n-type waveguide layer, and a p-type clad layer arranged on a side opposite to a side of the active layer on which the n-type carrier blocking layer is arranged, so as to be adjacent to the active layer, and having a bandgap width that is greater than those of the barrier layers and the n-type waveguide layer.
摘要翻译：半导体激光器元件包括有源层，n型载流子阻挡层，被布置成与有源层相邻并且具有等于或大于阻挡层的带隙宽度的带隙宽度; n型波导层布置在与其上配置有源层的n型载流子阻挡层的一侧相对的一侧，与n型载流子阻挡层相邻，配置在与n型载流子阻挡层相对的一侧上的n型覆盖层 n型波导层的配置有活性层的一侧，与n型波导层相邻，并且具有比n型波导层的带隙宽度大的带隙宽度， p型覆盖层布置在与有源层的配置有n型载流子阻挡层的一侧相对的一侧上，以与活性层相邻，并且具有大于阻挡层和n型波导层。

3. 发明申请

US20080144048A1 SEMICONDUCTOR DEVICE, AND TESTING METHOD AND DEVICE FOR THE SAME 有权
标题翻译：半导体器件及其测试方法和器件
公开(公告)号：US20080144048A1
公开(公告)日：2008-06-19
申请号：US11620909
申请日：2007-01-08
申请人： Nobuaki Ikebe , Toshiaki Iwafuchi , Michihiro Satou , Yuji Yamagata
发明人： Nobuaki Ikebe , Toshiaki Iwafuchi , Michihiro Satou , Yuji Yamagata
IPC分类号： G01B11/14 , H01L23/58
CPC分类号： H01L23/544 , H01L21/565 , H01L24/26 , H01L24/33 , H01L24/48 , H01L24/73 , H01L24/81 , H01L2223/5442 , H01L2223/54426 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/16145 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73265 , H01L2224/81121 , H01L2224/81801 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01077 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/181 , H01L2924/18161 , H01L2924/351 , H05K1/0269 , H05K3/3436 , H05K2201/2054 , H01L2924/3512 , H01L2924/00 , H01L2924/00012 , H01L2224/05599 , H01L2224/45099 , H01L2224/45015 , H01L2924/207 , H01L2224/0555 , H01L2224/0556
摘要： A semiconductor device includes: a circuit board; a semiconductor chip mounted over the circuit board with a predetermined gap therebetween and electrically connected to the circuit board by a protruding electrode; a first resin material filled into the gap between the circuit board and the semiconductor chip; a second resin material that seals the semiconductor chip mounted over the circuit board; a first reflector which is formed on a surface of the circuit board on the semiconductor chip side and reflects a predetermined testing light; and a second reflector which is formed on a surface of the semiconductor chip on the circuit board side and reflects the predetermined testing light.
摘要翻译：一种半导体器件包括：电路板; 半导体芯片，其安装在电路板上，其间具有预定间隙，并通过突出电极电连接到电路板; 填充到电路板和半导体芯片之间的间隙中的第一树脂材料; 密封安装在电路板上的半导体芯片的第二树脂材料; 第一反射器，其形成在半导体芯片侧的电路板的表面上并反射预定的测试光; 以及第二反射器，其形成在电路板侧的半导体芯片的表面上并反射预定的测试光。

4. 发明申请

US20050123012A1 Laser module 有权
标题翻译：激光模块
公开(公告)号：US20050123012A1
公开(公告)日：2005-06-09
申请号：US10982855
申请日：2004-11-08
申请人： Naoki Hayamizu , Yutaka Ohki , Hideo Aoyagi , Takeshi Koiso , Yuji Yamagata , Kiyofumi Muro
发明人： Naoki Hayamizu , Yutaka Ohki , Hideo Aoyagi , Takeshi Koiso , Yuji Yamagata , Kiyofumi Muro
IPC分类号： H01S3/00 , H01S3/08 , H01S5/022 , H01S5/024 , H01S5/0683 , H01S5/10 , H01S5/14 , H01S5/20 , H01S5/223 , H01S5/32 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/02208 , H01S5/02248 , H01S5/02415 , H01S5/02438 , H01S5/0652 , H01S5/0683 , H01S5/1039 , H01S5/146 , H01S5/2009 , H01S5/2231 , H01S5/3211 , H01S5/34313 , H01S2301/02
摘要： A laser module includes a semiconductor laser element and a feedback optical component forming an external cavity with the semiconductor laser element. Even if a ratio of a current threshold of the laser module changing according to a polarized state of returned light from the feedback optical component to a current threshold of the semiconductor laser element is in an arbitrary range within a predetermined range, a total value of a relative intensity noise occurring between a first frequency determined according to a cavity length of the external cavity and at least equal to or more than a frequency band of using a laser light and a second frequency calculated by multiplying the first frequency by a predetermined number is equal to or more than −40 dB.
摘要翻译：激光模块包括半导体激光元件和形成具有半导体激光元件的外部空腔的反馈光学元件。即使根据来自反馈光学分量的返回光的偏振状态改变为半导体激光元件的电流阈值的激光器模块的电流阈值的比例在预定范围内的任意范围内，在根据外部空腔的腔长度确定的至少等于或大于使用激光的频带的第一频率和通过将第一频率乘以预定数量而计算的第二频率之间产生的相对强度噪声相等至-40dB以上。

5. 发明授权

US07705351B2 Flip chip semiconductor packaging device and testing method using first and second reflectors for determining gap between chip and circuit board or first and second chips 有权
标题翻译：倒装芯片半导体封装器件和使用第一和第二反射器的测试方法，用于确定芯片和电路板或第一和第二芯片之间的间隙
公开(公告)号：US07705351B2
公开(公告)日：2010-04-27
申请号：US11620909
申请日：2007-01-08
申请人： Nobuaki Ikebe , Toshiaki Iwafuchi , Michihiro Satou , Yuji Yamagata
发明人： Nobuaki Ikebe , Toshiaki Iwafuchi , Michihiro Satou , Yuji Yamagata
IPC分类号： H01L23/58 , G01B11/14
CPC分类号： H01L23/544 , H01L21/565 , H01L24/26 , H01L24/33 , H01L24/48 , H01L24/73 , H01L24/81 , H01L2223/5442 , H01L2223/54426 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/16145 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73265 , H01L2224/81121 , H01L2224/81801 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01077 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/181 , H01L2924/18161 , H01L2924/351 , H05K1/0269 , H05K3/3436 , H05K2201/2054 , H01L2924/3512 , H01L2924/00 , H01L2924/00012 , H01L2224/05599 , H01L2224/45099 , H01L2224/45015 , H01L2924/207 , H01L2224/0555 , H01L2224/0556
摘要： A semiconductor device includes: a circuit board; a semiconductor chip mounted over the circuit board with a predetermined gap therebetween and electrically connected to the circuit board by a protruding electrode; a first resin material filled into the gap between the circuit board and the semiconductor chip; a second resin material that seals the semiconductor chip mounted over the circuit board; a first reflector which is formed on a surface of the circuit board on the semiconductor chip side and reflects a predetermined testing light; and a second reflector which is formed on a surface of the semiconductor chip on the circuit board side and reflects the predetermined testing light.
摘要翻译：一种半导体器件包括：电路板; 半导体芯片，其安装在电路板上，其间具有预定间隙，并通过突出电极电连接到电路板; 填充到电路板和半导体芯片之间的间隙中的第一树脂材料; 密封安装在电路板上的半导体芯片的第二树脂材料; 第一反射器，其形成在半导体芯片侧的电路板的表面上并反射预定的测试光; 以及第二反射器，其形成在电路板侧的半导体芯片的表面上并反射预定的测试光。

6. 发明授权

US07649921B2 Laser module 有权
标题翻译：激光模块
公开(公告)号：US07649921B2
公开(公告)日：2010-01-19
申请号：US10982855
申请日：2004-11-08
申请人： Naoki Hayamizu , Yutaka Ohki , Hideo Aoyagi , Takeshi Koiso , Yuji Yamagata , Kiyofumi Muro
发明人： Naoki Hayamizu , Yutaka Ohki , Hideo Aoyagi , Takeshi Koiso , Yuji Yamagata , Kiyofumi Muro
IPC分类号： H01S3/00 , H01S3/08
CPC分类号： B82Y20/00 , H01S5/02208 , H01S5/02248 , H01S5/02415 , H01S5/02438 , H01S5/0652 , H01S5/0683 , H01S5/1039 , H01S5/146 , H01S5/2009 , H01S5/2231 , H01S5/3211 , H01S5/34313 , H01S2301/02
摘要： A laser module includes a semiconductor laser element and a feedback optical component forming an external cavity with the semiconductor laser element. Even if a ratio of a current threshold of the laser module changing according to a polarized state of returned light from the feedback optical component to a current threshold of the semiconductor laser element is in an arbitrary range within a predetermined range, a total value of a relative intensity noise occurring between a first frequency determined according to a cavity length of the external cavity and at least equal to or more than a frequency band of using a laser light and a second frequency calculated by multiplying the first frequency by a predetermined number is equal to or more than −40 dB.
摘要翻译：激光模块包括半导体激光元件和形成具有半导体激光元件的外部空腔的反馈光学元件。即使根据来自反馈光学分量的返回光的偏振状态改变为半导体激光元件的电流阈值的激光器模块的电流阈值的比例在预定范围内的任意范围内，在根据外部空腔的腔长度确定的至少等于或大于使用激光的频带的第一频率和通过将第一频率乘以预定数量而计算的第二频率之间产生的相对强度噪声相等至-40dB以上。

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