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1. 发明申请

US20050123012A1 Laser module 有权
标题翻译：激光模块
公开(公告)号：US20050123012A1
公开(公告)日：2005-06-09
申请号：US10982855
申请日：2004-11-08
申请人： Naoki Hayamizu , Yutaka Ohki , Hideo Aoyagi , Takeshi Koiso , Yuji Yamagata , Kiyofumi Muro
发明人： Naoki Hayamizu , Yutaka Ohki , Hideo Aoyagi , Takeshi Koiso , Yuji Yamagata , Kiyofumi Muro
IPC分类号： H01S3/00 , H01S3/08 , H01S5/022 , H01S5/024 , H01S5/0683 , H01S5/10 , H01S5/14 , H01S5/20 , H01S5/223 , H01S5/32 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/02208 , H01S5/02248 , H01S5/02415 , H01S5/02438 , H01S5/0652 , H01S5/0683 , H01S5/1039 , H01S5/146 , H01S5/2009 , H01S5/2231 , H01S5/3211 , H01S5/34313 , H01S2301/02
摘要： A laser module includes a semiconductor laser element and a feedback optical component forming an external cavity with the semiconductor laser element. Even if a ratio of a current threshold of the laser module changing according to a polarized state of returned light from the feedback optical component to a current threshold of the semiconductor laser element is in an arbitrary range within a predetermined range, a total value of a relative intensity noise occurring between a first frequency determined according to a cavity length of the external cavity and at least equal to or more than a frequency band of using a laser light and a second frequency calculated by multiplying the first frequency by a predetermined number is equal to or more than −40 dB.
摘要翻译：激光模块包括半导体激光元件和形成具有半导体激光元件的外部空腔的反馈光学元件。即使根据来自反馈光学分量的返回光的偏振状态改变为半导体激光元件的电流阈值的激光器模块的电流阈值的比例在预定范围内的任意范围内，在根据外部空腔的腔长度确定的至少等于或大于使用激光的频带的第一频率和通过将第一频率乘以预定数量而计算的第二频率之间产生的相对强度噪声相等至-40dB以上。

2. 发明授权

US07649921B2 Laser module 有权
标题翻译：激光模块
公开(公告)号：US07649921B2
公开(公告)日：2010-01-19
申请号：US10982855
申请日：2004-11-08
申请人： Naoki Hayamizu , Yutaka Ohki , Hideo Aoyagi , Takeshi Koiso , Yuji Yamagata , Kiyofumi Muro
发明人： Naoki Hayamizu , Yutaka Ohki , Hideo Aoyagi , Takeshi Koiso , Yuji Yamagata , Kiyofumi Muro
IPC分类号： H01S3/00 , H01S3/08
CPC分类号： B82Y20/00 , H01S5/02208 , H01S5/02248 , H01S5/02415 , H01S5/02438 , H01S5/0652 , H01S5/0683 , H01S5/1039 , H01S5/146 , H01S5/2009 , H01S5/2231 , H01S5/3211 , H01S5/34313 , H01S2301/02
摘要： A laser module includes a semiconductor laser element and a feedback optical component forming an external cavity with the semiconductor laser element. Even if a ratio of a current threshold of the laser module changing according to a polarized state of returned light from the feedback optical component to a current threshold of the semiconductor laser element is in an arbitrary range within a predetermined range, a total value of a relative intensity noise occurring between a first frequency determined according to a cavity length of the external cavity and at least equal to or more than a frequency band of using a laser light and a second frequency calculated by multiplying the first frequency by a predetermined number is equal to or more than −40 dB.
摘要翻译：激光模块包括半导体激光元件和形成具有半导体激光元件的外部空腔的反馈光学元件。即使根据来自反馈光学分量的返回光的偏振状态改变为半导体激光元件的电流阈值的激光器模块的电流阈值的比例在预定范围内的任意范围内，在根据外部空腔的腔长度确定的至少等于或大于使用激光的频带的第一频率和通过将第一频率乘以预定数量而计算的第二频率之间产生的相对强度噪声相等至-40dB以上。

3. 发明授权

US06847667B2 Semiconductor laser device and laser module using same 有权
标题翻译：半导体激光器件和激光模块使用相同
公开(公告)号：US06847667B2
公开(公告)日：2005-01-25
申请号：US10802753
申请日：2004-03-18
申请人： Atsushi Ohkubo , Satoru Okada , Tsuyoshi Fujimoto , Takeshi Koiso , Kiyofumi Muro , Michio Ohkubo , Yutaka Ohki
发明人： Atsushi Ohkubo , Satoru Okada , Tsuyoshi Fujimoto , Takeshi Koiso , Kiyofumi Muro , Michio Ohkubo , Yutaka Ohki
IPC分类号： H01S5/022 , H01S5/065 , H01S5/14 , H01S5/34 , H01S5/00
CPC分类号： B82Y20/00 , H01S5/02208 , H01S5/02284 , H01S5/02415 , H01S5/02438 , H01S5/0652 , H01S5/0656 , H01S5/146 , H01S5/34
摘要： A semiconductor laser device emitting a laser beam having stable emitting wavelength and a multimode spectrum is provided. The semiconductor laser device is a Fabry-Perot type semiconductor laser device having a layer structure including an active layer of a quantum well structure, and emitting a laser beam having wavelength stabilized by an action of return light and having a multimode spectrum, wherein each well layer satisfies relation: Γ/d≦1.3×10−3 nm−1 where Γ and d(nm) are an optical confinement factor and a thickness of a well layer, respectively.
摘要翻译：提供了发射具有稳定发射波长和多模光谱的激光束的半导体激光装置。半导体激光器件是具有包括量子阱结构的有源层的层结构的法布里 - 珀罗型半导体激光器件，并且发射具有通过返回光的作用而具有波长稳定并且具有多模光谱的波长的激光束，其中每个阱层满足关系：其中Gamma和d（nm）分别是光限制因子和阱层的厚度。

4. 发明授权

US06546032B1 Semiconductor laser apparatus 有权
标题翻译：半导体激光装置
公开(公告)号：US06546032B1
公开(公告)日：2003-04-08
申请号：US09644080
申请日：2000-08-23
申请人： Yasuo Oeda , Satoru Okada , Kouichi Igarashi , Yumi Naito , Kiyofumi Muro , Takeshi Koiso , Yoshikazu Yamada , Atsushi Okubo , Tsuyoshi Fujimoto
发明人： Yasuo Oeda , Satoru Okada , Kouichi Igarashi , Yumi Naito , Kiyofumi Muro , Takeshi Koiso , Yoshikazu Yamada , Atsushi Okubo , Tsuyoshi Fujimoto
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/20 , H01S5/2004 , H01S5/2009 , H01S5/34313 , H01S5/34353
摘要： On a substrate of n-type GaAs are sequentially formed an n-type cladding layer (AlGaAs, Al content x=0.07, thickness t=2.86 &mgr;m), an n-type optical waveguide layer (GaAs, t=0.49 &mgr;m), an n-type carrier blocking layer (AlGaAs, x=0.40, t=0.03 &mgr;m), an active layer (composed of an In0.18Ga0.82As quantum well layer and a GaAs barrier layer), a p-type carrier blocking layer (AlGaAs, x=0.40, t=0.03 &mgr;m), a p-type optical waveguide layer (GaAs, t=0.49 &mgr;m), a p-type cladding layer (AlGaAs, x=0.20, t=1.08 &mgr;m), and a p-type cap layer (GaAs) in which a pair of n-type current blocking layers (GaAs) are buried. With this construction, the occurrence of a wavelength spit due to a higher-order mode can be inhibited thereby stabilizing a higher power operation.
摘要翻译：在n型GaAs衬底上依次形成n型覆层（AlGaAs，Al含量x = 0.07，厚度t =2.86μm），n型光波导层（GaAs，t =0.49μm）， n型载流子阻挡层（AlGaAs，x = 0.40，t =0.03μm），有源层（由In0.18Ga0.82As量子阱层和GaAs势垒层构成），p型载流子阻挡层（AlGaAs ，p型光波导层（GaAs，t =0.49μm），p型覆层（AlGaAs，x = 0.20，t =1.08μm），p型光波导层封装了一对n型电流阻挡层（GaAs）的封装层（GaAs）。利用这种结构，可以抑制由高阶模式引起的波长吐出的发生，从而稳定高功率操作。

5. 发明授权

US06717186B2 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US06717186B2
公开(公告)日：2004-04-06
申请号：US10230988
申请日：2002-08-30
申请人： Tsuyoshi Fujimoto , Kiyofumi Muro , Takeshi Koiso
发明人： Tsuyoshi Fujimoto , Kiyofumi Muro , Takeshi Koiso
IPC分类号： H01L3300
CPC分类号： H01S5/2231 , H01S5/2077 , H01S5/222
摘要： A real index guided semiconductor laser device includes an optical waveguide layer at least on one side of an active layer that has a band gap energy not less than that of the active layer; a cladding layer on an outer side of the optical waveguide layer that has a band gap energy not less than that of the optical waveguide layer; a refractive index control layer having a striped window, buried in the optical waveguide layer by selective growth; and a semiconductor layer formed in the optical waveguide layer by selective growth prior to the selective growth of the refractive index control layer. In a laminated portion including the semiconductor layer and the refractive index control layer, a change in effective refractive index due to a change in thickness of the semiconductor layer is smaller than that of the refractive index control layer.
摘要翻译：实际的折射率引导半导体激光器件包括：有源层的至少一侧的光波导层，其具有不小于有源层的带隙能量; 在光波导层的外侧具有不小于光波导层的带隙能量的包层; 折射率控制层，其具有通过选择性生长掩埋在所述光波导层中的条纹窗口; 以及通过在折射率控制层的选择性生长之前的选择性生长而形成在光波导层中的半导体层。在包括半导体层和折射率控制层的层叠部分中，由于半导体层的厚度变化引起的有效折射率的变化小于折射率控制层的变化。

6. 发明申请

US20110032967A1 SINGLE LONGITUDINAL MODE LASER DIODE 有权
标题翻译：单一纵向激光二极管
公开(公告)号：US20110032967A1
公开(公告)日：2011-02-10
申请号：US12908592
申请日：2010-10-20
申请人： Alex A. Behfar , Kiyofumi Muro , Christian B. Stagarescu , Alfred T. Schremer
发明人： Alex A. Behfar , Kiyofumi Muro , Christian B. Stagarescu , Alfred T. Schremer
IPC分类号： H01S5/30 , G02B6/26
CPC分类号： H01S5/0625 , B82Y20/00 , H01S5/0264 , H01S5/06256 , H01S5/0655 , H01S5/1017 , H01S5/1021 , H01S5/1039 , H01S5/125 , H01S5/141 , H01S5/22 , H01S5/343 , H01S5/34313
摘要： A single-mode, etched facet distributed Bragg reflector laser includes an AlGaInAs/InP laser cavity, a front mirror stack with multiple Fabry-Perot elements, a rear DBR reflector, and a rear detector. The front mirror stack elements and the rear reflector elements include input and output etched facets, and the laser cavity is an etched ridge cavity, all formed from an epitaxial wafer by a two-step lithography and CAIBE process.
摘要翻译：单模蚀刻刻面分布布拉格反射激光器包括AlGaInAs / InP激光腔，具有多个法布里 - 珀罗元件的前镜叠层，后DBR反射器和后检测器。前反射镜堆叠元件和后反射器元件包括输入和输出蚀刻刻面，并且激光腔是蚀刻的脊腔，全部由外延晶片通过两步光刻和CAIBE工艺形成。

7. 发明授权

US6104741A Semiconductor laser light source and solid-state laser apparatus 失效
标题翻译：半导体激光光源和固态激光装置
公开(公告)号：US6104741A
公开(公告)日：2000-08-15
申请号：US49076
申请日：1998-03-27
申请人： Kouichi Igarashi , Yasuo Oeda , Kiyofumi Muro
发明人： Kouichi Igarashi , Yasuo Oeda , Kiyofumi Muro
IPC分类号： G02B6/42 , G02B27/10 , G02B27/42 , H01S3/00 , H01S5/00 , H01S5/40 , H01S3/091 , G02B6/00 , G02B6/32 , G02B6/34
CPC分类号： G02B27/12 , G02B19/0014 , G02B19/0057 , G02B27/123 , G02B6/425 , G02B6/4206 , H01S3/005 , H01S5/005 , H01S5/4031
摘要： A semiconductor laser light source includes: a semiconductor laser array which emits laser beams whose polarization planes are parallel to each other and whose divergent angles .theta.z and .theta.x in two orthogonal directions satisfy an inequality .theta.z>.theta.x; a cylindrical lens which converges the laser beams emitted from the semiconductor laser array in a direction that decreases the divergent angle .theta.z; a wave plate which controls the direction of polarization so that the polarization planes of the laser beams having passed through the cylindrical lens are at 90 degrees to each other; a birefringent optical element which merges by the birefringent effect the optical paths of the laser beams having passed through the wave plate; and a light emitting surface which converges the laser beams merged by the birefringent optical element in a direction that decreases the divergent angle .theta.x.Thus, the efficiency of merging the laser beams and the efficiency of joining the laser beams to the succeeding optical system can be greatly improved.
摘要翻译：半导体激光源包括：发射激光束的半导体激光器阵列，其偏振面彼此平行，并且其两个正交方向上的发散角θz和θx满足不等式θz>θx; 柱面透镜，其使从半导体激光器阵列发射的激光束沿减小发散角θz的方向会聚; 控制偏振方向的波片，使得通过柱面透镜的激光束的偏振面相互成90度; 双折射光学元件，其通过双折射效应合并已经通过波片的激光束的光路; 以及会聚由双折射光学元件合流的激光束沿着减小发散角θx的方向会聚的发光面。因此，可以大大提高合并激光束的效率和将激光束接合到后续光学系统的效率。

8. 发明申请

US20050147145A1 Single longitudinal mode laser diode 有权
标题翻译：单纵模激光二极管
公开(公告)号：US20050147145A1
公开(公告)日：2005-07-07
申请号：US10929718
申请日：2004-08-31
申请人： Alex Behfar , Kiyofumi Muro , Cristian Stagarescu , Alfred Schremer
发明人： Alex Behfar , Kiyofumi Muro , Cristian Stagarescu , Alfred Schremer
IPC分类号： G02B5/28 , H01S20060101 , H01S3/03 , H01S3/08 , H01S5/00 , H01S5/026 , H01S5/0625 , H01S5/10 , H01S5/125 , H01S5/14 , H01S5/22 , H01S5/343
CPC分类号： H01S5/0625 , B82Y20/00 , H01S5/0264 , H01S5/06256 , H01S5/0655 , H01S5/1017 , H01S5/1021 , H01S5/1039 , H01S5/125 , H01S5/141 , H01S5/22 , H01S5/343 , H01S5/34313
摘要： A single-mode, etched facet distributed Bragg reflector laser includes an AlGaInAs/InP laser cavity, a front mirror stack with multiple Fabry-Perot elements, a rear DBR reflector, and a rear detector. The front mirror stack elements and the rear reflector elements include input and output etched facets, and the laser cavity is an etched ridge cavity, all formed from an epitaxial wafer by a two-step lithography and CAIBE process.
摘要翻译：单模蚀刻刻面分布布拉格反射激光器包括AlGaInAs / InP激光腔，具有多个法布里 - 珀罗元件的前镜叠层，后DBR反射器和后检测器。前反射镜堆叠元件和后反射器元件包括输入和输出蚀刻刻面，并且激光腔是蚀刻的脊腔，全部由外延晶片通过两步光刻和CAIBE工艺形成。

9. 发明申请

US20050105845A1 Semiconductor laser device, semiconductor laser module, and optical fiber amplifier 有权
标题翻译：半导体激光器件，半导体激光器模块和光纤放大器
公开(公告)号：US20050105845A1
公开(公告)日：2005-05-19
申请号：US11020320
申请日：2004-12-27
申请人： Yasuo Oeda , Kiyofumi Muro , Michio Okubo
发明人： Yasuo Oeda , Kiyofumi Muro , Michio Okubo
IPC分类号： H01S3/06 , G02B6/28 , H01S3/10 , H01S5/20 , H01S5/22 , H01S5/343
CPC分类号： H01S5/20 , H01S5/2004
摘要： A semiconductor laser device includes a layer structure of a first conductive cladding layer, an active layer, and a second conductive cladding layer sequentially grown on a first conductive semiconductor substrate; and a light emitting facet from which a laser beam having a first wavelength is emitted. Refractive indexes of the first and the second conductive cladding layers with respect to the first wavelength are lower than an effective refractive index with respect to the first wavelength. With respect to a light having a second wavelength incident on the light emitting facet from outside, the refractive index of at least one of the first and the second conductive cladding layers is equal to or higher than the effective refractive index with respect to the second wavelength.
摘要翻译：半导体激光器件包括在第一导电半导体衬底上顺序生长的第一导电覆层，有源层和第二导电覆层的层结构; 以及发射具有第一波长的激光束的发光小面。第一和第二导电包覆层相对于第一波长的折射率低于相对于第一波长的有效折射率。对于从外部入射到发光小面上的具有第二波长的光，第一和第二导电包覆层中的至少一个的折射率相对于第二波长的折射率等于或高于有效折射率。

10. 发明授权

US5999325A Optical device and method of manufacturing the same 失效
标题翻译：光学装置及其制造方法
公开(公告)号：US5999325A
公开(公告)日：1999-12-07
申请号：US901028
申请日：1992-06-19
申请人： Akira Eda , Kiyofumi Muro
发明人： Akira Eda , Kiyofumi Muro
IPC分类号： G02B3/00 , G02B6/124 , G02F1/37 , G03F7/00 , H01S3/05 , H01S3/06 , H01S3/23 , H01S5/10 , H01S5/183 , G02B27/10 , G02B5/08
CPC分类号： H01S3/2383 , G02B3/0012 , G02B3/0018 , G02B3/005 , G02B3/0056 , G02B3/0068 , G02B6/1245 , G02F1/37 , G03F7/0005 , H01S3/0627 , H01S3/0606 , H01S3/0615 , H01S3/0621 , H01S3/0625 , H01S3/08095 , H01S3/09415 , H01S3/2308 , H01S5/0267 , H01S5/18388
摘要： An optical device includes a block of optical material. The block includes a first and second end face, and a portion of the first end face includes at least one convex arcuate portion.
摘要翻译：光学装置包括光学材料块。该块包括第一和第二端面，并且第一端面的一部分包括至少一个凸形弓形部分。

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