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    • 5. 发明授权
    • Dual section electret microphone
    • 双段驻极体麦克风
    • US4329547A
    • 1982-05-11
    • US126380
    • 1980-03-03
    • Tsutomu Imai
    • Tsutomu Imai
    • H04R1/40H04R19/01H04R19/04
    • H04R19/04H04R19/016
    • A bi-directional capacitor microphone is formed of first and second transducer sections, each section comprising a diaphragm and a back plate facing the diaphragm and separated therefrom. The diaphragm of the first transducer section includes an electret and the back plate of the second transducer section includes another electret. The back plates of the first and second transducer sections are disposed in a back-to-back configuration and are electrically coupled to each other and to one output. The diaphragms of the first and second transducer sections are connected to each other and to another output, so that an output signal appears between the outputs. Preferably, both electrets are selected to have a negative polarity. The bi-directional microphone so constructed exhibits superior response for lower audio frequencies.
    • 双向电容麦克风由第一和第二换能器部分形成,每个部分包括一个隔膜和一个面向隔膜的后板,并与之隔开。 第一换能器部分的振膜包括驻极体,第二换能器部分的背板包括另一驻极体。 第一和第二换能器部分的背板以背靠背的形式设置,并且彼此电连接并连接到一个输出端。 第一和第二换能器部分的隔膜彼此连接并连接到另一输出端,​​从而在输出之间出现输出信号。 优选地,两个驻极体被选择为具有负极性。 如此构造的双向麦克风对于较低的音频表现出优异的响应。
    • 8. 发明申请
    • Semiconductor device and method for manufacturing semiconductor device
    • 半导体装置及半导体装置的制造方法
    • US20050161709A1
    • 2005-07-28
    • US11040236
    • 2005-01-21
    • Tetsuya MiwaTsutomu ImaiSeiji KaiTakayuki Kaida
    • Tetsuya MiwaTsutomu ImaiSeiji KaiTakayuki Kaida
    • H01L27/148H01L21/768H01L27/146
    • H01L27/14658H01L21/76838H01L27/14603H01L27/148
    • A compact semiconductor device having a contact hole that improves stability of electric connection between a wire and an electrode. The semiconductor device includes an insulation layer formed on a semiconductor substrate, first electrodes formed on the insulation layer and spaced from one another by an interval, an insulation film covering the first electrodes, and spaced second electrodes formed on the insulation film. Each second electrode includes an intermediate portion filling the space between two adjacent first electrodes, two edge portions respectively laid above the two adjacent first electrodes in an overlapping manner, and an upper surface connected to a wire by a contact. Thickness, t1, of the insulation film, thickness, t2, of each edge portion of the second electrode, and interval, S, between the first electrodes are adjusted to satisfy the expression of S
    • 一种紧凑的半导体器件,其具有提高线和电极之间的电连接的稳定性的接触孔。 半导体器件包括形成在半导体衬底上的绝缘层,形成在绝缘层上并间隔一定距离的第一电极,覆盖第一电极的绝缘膜以及形成在绝缘膜上的间隔开的第二电极。 每个第二电极包括填充两个相邻的第一电极之间的空间的中间部分,以重叠的方式分别铺设在两个相邻的第一电极之上的两个边缘部分,以及通过接触连接到电线的上表面。 调整绝缘膜的厚度t 1,第二电极的每个边缘部分的厚度t 2和第一电极之间的间隔S满足S <(2t 1 + 2t 2)的表达式。