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1. 发明授权

US5681614A Hydrophobic treatment method involving delivery of a liquid process agent to a process space 失效
标题翻译：涉及将液体加工剂输送到工艺空间的疏水处理方法
公开(公告)号：US5681614A
公开(公告)日：1997-10-28
申请号：US595785
申请日：1996-02-02
申请人： Tsutae Omori , Kouji Harada , Takami Satoh , Noriyuki Anai , Masafumi Nomura
发明人： Tsutae Omori , Kouji Harada , Takami Satoh , Noriyuki Anai , Masafumi Nomura
IPC分类号： G03F7/16 , C23C16/44 , C23C16/448 , H01L21/027 , H01L21/30 , C23C16/52
CPC分类号： C23C16/4485 , C23C16/4412 , Y10S427/101
摘要： An apparatus for hydrophobic treatment of a semiconductor wafer comprises a tank in which HMDS liquid is stored, a process chamber in which the wafer is treated, and a unit for supplying HMDS liquid from the tank into the process chamber in an amount needed at any desired time. The process chamber can be decompressed by an ejector which is connected to the process chamber through an exhaust pipe. A mount on which the wafer is mounted is arranged in the process chamber and it includes a heater embedded therein. A ring surrounds the mount and two liquid receiving recesses are formed on the top of the ring. Two HMDS liquid supply pipes extend just above their corresponding liquid receiving recesses. HMDS in liquid phase is supplied into the process chamber and vaporized in it. The density of HMDS gas in the process chamber is controlled by adjusting the amount of HMDS liquid supplied.
摘要翻译：用于半导体晶片的疏水处理的设备包括其中存储HMDS液体的罐，处理所述晶片的处理室，以及用于将HMDS液体从所述罐供应到所述处理室中的单元，其以任何所需的量时间。处理室可以通过排气管连接到处理室的喷射器进行减压。安装有晶片的安装件布置在处理室中，并且其包括嵌入其中的加热器。一个环围绕安装座，两个液体接收凹口形成在环的顶部。两个HMDS液体供应管正好在其相应的液体接收凹槽上方延伸。液相中的HMDS被供应到处理室中并在其中蒸发。通过调节供应的HMDS液体的量来控制处理室中的HMDS气体的密度。

2. 发明授权

US5505781A Hydrophobic processing apparatus including a liquid delivery system 失效
标题翻译：疏水处理装置，包括液体输送系统
公开(公告)号：US5505781A
公开(公告)日：1996-04-09
申请号：US189071
申请日：1994-01-28
申请人： Tsutae Omori , Kouji Harada , Takami Satoh , Noriyuki Anai , Masafumi Nomura
发明人： Tsutae Omori , Kouji Harada , Takami Satoh , Noriyuki Anai , Masafumi Nomura
IPC分类号： G03F7/16 , C23C16/44 , C23C16/448 , H01L21/027 , H01L21/30 , C23C16/00
CPC分类号： C23C16/4485 , C23C16/4412 , Y10S427/101
摘要： An apparatus for hydrophobic treatment of a semiconductor wafer comprises a tank in which HMDS liquid is stored, a process chamber in which the wafer is treated, and a unit for supplying HMDS liquid from the tank into the process chamber in an amount needed at any desired time. The process chamber can be decompressed by an ejector which is connected to the process chamber through an exhaust pipe. A mount on which the wafer is mounted is arranged in the process chamber and it includes a heater embedded therein. A ring surrounds the mount and two liquid receiving recesses are formed on the top of the ring. Two HMDS liquid supply pipes extend just above their corresponding liquid receiving recesses. HMDS in liquid phase is supplied into the process chamber and vaporized in it. The density of HMDS gas in the process chamber is controlled by adjusting the amount of HMDS liquid supplied.
摘要翻译：用于半导体晶片的疏水处理的设备包括其中存储HMDS液体的罐，处理所述晶片的处理室，以及用于将HMDS液体从所述罐供应到所述处理室中的单元，其以任何所需的量时间。处理室可以通过排气管连接到处理室的喷射器进行减压。安装有晶片的安装件布置在处理室中，并且其包括嵌入其中的加热器。一个环围绕安装座，两个液体接收凹口形成在环的顶部。两个HMDS液体供应管正好在其相应的液体接收凹槽上方延伸。液相中的HMDS被供应到处理室中并在其中蒸发。通过调节供应的HMDS液体的量来控制处理室中的HMDS气体的密度。

3. 发明授权

US06635113B2 Coating apparatus and coating method 失效
标题翻译：涂布设备和涂布方法
公开(公告)号：US06635113B2
公开(公告)日：2003-10-21
申请号：US09313860
申请日：1999-05-18
申请人： Hideyuki Takamori , Noriyuki Anai , Masafumi Nomura , Kiyohisa Tateyama , Tsutae Omori
发明人： Hideyuki Takamori , Noriyuki Anai , Masafumi Nomura , Kiyohisa Tateyama , Tsutae Omori
IPC分类号： B05C1110
CPC分类号： H01L21/6715
摘要： A substrate is held on a spin chuck, and resist solution is supplied to the surface of the substrate at a plurality of positions spaced at predetermined intervals from a plurality of resist nozzles provided the bottom surface of a resist pipe provided over a first direction across the surface of the substrate. Thereafter, the substrate is oscillated or rotated, thereby making the resist solution on the substrate a thin coating film with a uniform thickness. In the coating apparatus and method, which are excellent in responsiveness to a degree of viscosity of coating solution, various kinds of treatment agents with a wide range of viscosity can be used, and mechanical accuracy such as the space between the nozzles and the substrate, accuracy of the nozzle size, and the like can be loosened.
摘要翻译：将基板保持在旋转卡盘上，并且将抗蚀剂溶液以多个位置间隔开的多个位置从多个抗蚀剂喷嘴供应到基板的表面，所述多个抗蚀剂喷嘴设置在沿着第一方向设置的抗蚀剂管的底表面基板的表面。此后，基板振荡或旋转，从而使抗蚀剂溶液在基板上具有均匀厚度的薄涂层膜。在对涂布液的粘度的响应性优异的涂布装置和方法中，可以使用具有宽范围粘度的各种处理剂，并且可以使用诸如喷嘴和基板之间的空间的机械精度，可以使喷嘴尺寸的精度等松动。

4. 发明授权

US06306455B1 Substrate processing method 失效
标题翻译：基板加工方法
公开(公告)号：US06306455B1
公开(公告)日：2001-10-23
申请号：US09141721
申请日：1998-08-27
申请人： Hideyuki Takamori , Masafumi Nomura , Tsutae Omori
发明人： Hideyuki Takamori , Masafumi Nomura , Tsutae Omori
IPC分类号： B05D312
CPC分类号： H01L21/67248 , B05C11/08 , B05D1/005 , H01L21/6838
摘要： A method of processing a substrate for forming a coating film on a substrate comprising the steps of (a) mounting a substrate on a temperature controlling means which is capable of having a heat influence on the substrate, and controlling temperature of the substrate by the temperature controlling means, (b) controlling temperature of a coating solution to be supplied to the substrate, (c) controlling temperature of a contact member in contact with the substrate when the substrate is transported and held, (d) detecting temperature of an atmosphere of a process space for applying the coating solution to the substrate, (e) setting a desired temperature on the basis of temperature/film-thickness data previously obtained by forming the coating film on the substrate, (f) controlling a temperature controlling operation of at least step (c) on the basis of the desired temperature set in the step (e) and the temperature detected in the step (d), and (g) applying the coating solution to the substrate.
摘要翻译：一种处理在基板上形成涂膜的基板的方法，包括以下步骤：（a）将基板安装在能够对基板产生热影响的温度控制装置上，并将基板的温度控制在温度控制装置，（b）控制供给到基板的涂布液的温度，（c）控制基板被输送和保持时与基板接触的接触部件的温度，（d）检测温度，用于将涂布溶液涂布到基板上的处理空间，（e）基于通过在基板上形成涂膜而获得的温度/膜厚度数据设定所需温度，（f）控制在基板上的温度控制操作基于步骤（e）中设定的所需温度和步骤（d）中检测到的温度，最小步骤（c），和（g）将涂布溶液施加到副策划

5. 发明授权

US09064853B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09064853B2
公开(公告)日：2015-06-23
申请号：US13572847
申请日：2012-08-13
申请人： Masafumi Nomura , Kenichi Okazaki , Toshiyuki Miyamoto , Takashi Hamochi , Shunpei Yamazaki
发明人： Masafumi Nomura , Kenichi Okazaki , Toshiyuki Miyamoto , Takashi Hamochi , Shunpei Yamazaki
IPC分类号： H01L27/12 , H01L29/12 , H01L29/49 , H01L29/786 , H01L29/66
CPC分类号： H01L29/4908 , H01L29/66969 , H01L29/78606 , H01L29/7869 , H01L29/78693
摘要： A semiconductor device including an oxide semiconductor and including a more excellent gate insulating film is provided. A highly reliable and electrically stable semiconductor device having a small number of changes in the film structure, the process conditions, the manufacturing apparatus, or the like from a mass production technology that has been put into practical use is provided. A method for manufacturing the semiconductor device is provided. The semiconductor device includes a gate electrode, a gate insulating film formed over the gate electrode, and an oxide semiconductor film formed over the gate insulating film. The gate insulating film includes a silicon nitride oxide film, a silicon oxynitride film formed over the silicon nitride oxide film, and a metal oxide film formed over the silicon oxynitride film. The oxide semiconductor film is formed over and in contact with the metal oxide film.
摘要翻译：提供了包括氧化物半导体并且包括更优异的栅极绝缘膜的半导体器件。本发明提供了一种从投入实际使用的大规模生产技术的膜结构，工艺条件，制造装置等的变化少的高可靠性和电稳定性的半导体装置。提供一种半导体器件的制造方法。半导体器件包括形成在栅电极上的栅电极，栅绝缘膜和形成在栅极绝缘膜上的氧化物半导体膜。栅极绝缘膜包括在氮氧化硅膜上形成的氮氧化硅膜，氧氮化硅膜和在氧氮化硅膜上形成的金属氧化物膜。氧化物半导体膜形成在金属氧化物膜上并与其接触。

6. 发明授权

US06969572B2 Developing method and apparatus 失效
标题翻译：开发方法和装置
公开(公告)号：US06969572B2
公开(公告)日：2005-11-29
申请号：US10706091
申请日：2003-11-13
申请人： Kiyohisa Tateyama , Masafumi Nomura , Taketora Shinogi
发明人： Kiyohisa Tateyama , Masafumi Nomura , Taketora Shinogi
IPC分类号： G03F7/26 , G03D3/06 , G03F7/30 , H01L21/00 , H01L21/027 , G03D5/04 , G03D5/06 , G03F7/32
CPC分类号： G03D3/065 , G03D3/06 , G03F7/30 , G03F7/3071 , H01L21/6715 , H01L21/67253
摘要： In this developing method and apparatus, a concentration measuring unit 222 picks part of developing fluid in a blending tank 186 to measure the resist concentration by an absorption photometry and feeds the detected resist concentration to a control unit 240. The control unit 240 controls respective valves 210, 212, 216 of a TMAH concentrate solution 200, a solvent pipe 204 and a drain pipe 208 in a manner that the developing fluid in the blending tank 186 has a TMAH concentration corresponding to a measured resist-concentration value to accomplish a constant developing rate, performing component control of the developing fluid. The developing fluid transferred from the blending tank 186 to a supply tank 188 is fed to a developer nozzle DN in a developing section 126 through a developer pipe 224 owing to the drive of a pump 228. Accordingly, even if the developing fluid is reused in the developing process in multiple times, it is possible to make sure of the uniformity in development.
摘要翻译：在该显影方法和装置中，浓度测量单元222拾取混合罐186中的显影液的一部分，通过吸收测光法测量抗蚀剂浓度，并将检测到的抗蚀剂浓度供给到控制单元240。控制单元240以这样的方式控制TMAH浓缩液200，溶剂管204和排水管208的各个阀210,212,216，使得混合罐186中的显影流体具有对应于测量的抗蚀剂层的TMAH浓度，浓度值以实现恒定的显影速率，进行显影液的成分控制。通过泵228的驱动，从混合罐186向供给罐188输送的显影液通过显影剂管道224被供给到显影部分126中的显影剂喷嘴DN。因此，即使显影液在显影过程中重复使用多次，也可以确保显影的均匀性。

7. 发明授权

US5880309A Phenylphosphonic acid derivative and production process therefor 失效
标题翻译：苯基膦酸衍生物及其制备方法
公开(公告)号：US5880309A
公开(公告)日：1999-03-09
申请号：US8244
申请日：1998-01-15
申请人： Hideo Suzuki , Masafumi Nomura , Kenichi Tokunaga , Isao Hashiba
发明人： Hideo Suzuki , Masafumi Nomura , Kenichi Tokunaga , Isao Hashiba
IPC分类号： C07F9/38 , C07F9/40
CPC分类号： C07F9/3834 , C07F9/4021
摘要： A dialkyl dialkoxycarbonylphenylphosphonate which is useful as a resin modifier, a process for producing the same in high yield at a low cost, and a process for producing a dicarboxyphenylphosphonic acid in high yield at a low cost are described.The process for producing a dialkyl dialkoxycarbonylphenylphosphonate comprises heating and reacting a dialkoxycarbonylphenyl halide with a trialkyl phosphate in the presence of a catalyst comprising an element of group VIII of the periodic table (such as an alumina supported palladium catalyst) and hydrolyzing the obtained dialkyl dialkoxycarbonylphenylphosphonate in the presence of an acid or base to produce a dicarboxyphenylphosphonic acid.
摘要翻译：描述了可用作树脂改性剂的二烷基二烷氧基羰基苯基膦酸酯，以低成本高产率地制备其的方法和以低成本高产率生产二羧基苯基膦酸的方法。制备二烷基二烷氧基羰基苯基膦酸二烷基酯的方法包括在包含元素周期表第Ⅷ族元素（如氧化铝负载的钯催化剂）的催化剂存在下，加热和反应二烷氧基羰基苯基卤化物与磷酸三烷基酯，并将得到的二烷基二烷氧基羰基苯基膦酸酯水解存在酸或碱以产生二羧基苯基膦酸。

8. 发明授权

US5445699A Processing apparatus with a gas distributor having back and forth parallel movement relative to a workpiece support surface 失效
标题翻译：具有气体分配器的处理装置相对于工件支撑表面具有前后平行移动
公开(公告)号：US5445699A
公开(公告)日：1995-08-29
申请号：US145663
申请日：1993-11-04
申请人： Yuuji Kamikawa , Kimiharu Matsumura , Masafumi Nomura , Junichi Nagata
发明人： Yuuji Kamikawa , Kimiharu Matsumura , Masafumi Nomura , Junichi Nagata
IPC分类号： C23C16/44 , C23C16/455 , C23C16/52
CPC分类号： C23C16/45589 , C23C16/455
摘要： A processing apparatus comprising a reaction chamber, a workpiece-supporting section located in the reaction chamber for supporting a workpiece, a gas distributor located in the reaction chamber and facing the workpiece-supporting section for distributing reaction gas to a workpiece that is on the supporting surface of the workpiece-supporting section, a gas supply for supplying the reaction gas into the reaction chamber through the gas distributor and at a predetermined pressure, and a drive mechanism for moving the gas distributor back and forth relative to the workpiece-supporting section in a direction that is parallel to the supporting surface of the workpiece-supporting section. The speed of the relative movement can be varied and the reaction gas flow rate can be controlled in accordance with the speed the relative movement or the position of the gas distributor with respect to the workpiece-supporting sector during the relative movement.
摘要翻译：一种处理装置，包括反应室，位于用于支撑工件的反应室中的工件支撑部分，位于反应室中的面对工件支撑部分的气体分配器，用于将反应气体分配到在支撑件上的工件工件支撑部分的表面，用于通过气体分配器以预定压力将反应气体供应到反应室中的气体供应源和用于相对于工件支撑部分来回移动气体分配器的驱动机构，与工件支承部的支承面平行的方向。可以改变相对运动的速度，并且可以根据在相对运动期间气体分配器相对于工件支撑扇区的相对运动或位置的速度来控制反应气体流量。

9. 发明授权

US07163807B2 Nucleic acid sequences encoding modified prepro peptides of an alkaline protease 有权
标题翻译：编码碱性蛋白酶修饰前原肽的核酸序列
公开(公告)号：US07163807B2
公开(公告)日：2007-01-16
申请号：US11318576
申请日：2005-12-28
申请人： Tsuyoshi Sato , Mitsuyoshi Okuda , Yasushi Takimura , Nobuyuki Sumitomo , Masafumi Nomura , Tohru Kobayashi
发明人： Tsuyoshi Sato , Mitsuyoshi Okuda , Yasushi Takimura , Nobuyuki Sumitomo , Masafumi Nomura , Tohru Kobayashi
IPC分类号： C12N9/52 , C12N15/57 , C12N15/62 , C12N15/74
CPC分类号： C07H21/04 , C12N9/54
摘要： The present invention relates to genes expressing an alkaline protease having a prepro sequence, vectors containing the same, and transformants containing said vector. The present invention also relates to a method for producing an alkaline protease.
摘要翻译：本发明涉及表达具有前原序列的碱性蛋白酶，含有其的载体和含有该载体的转化体的基因。本发明还涉及碱性蛋白酶的制造方法。

10. 发明授权

US07153886B2 Method for treatment of peripheral inflammation of a loop ileal artificial anus 有权
标题翻译：环路回肠人造肛门周围炎症的治疗方法
公开(公告)号：US07153886B2
公开(公告)日：2006-12-26
申请号：US10790790
申请日：2004-03-03
申请人： Toru Kono , Masafumi Nomura
发明人： Toru Kono , Masafumi Nomura
IPC分类号： A61K31/19 , A61K31/185
CPC分类号： A61K31/192
摘要： The present invention provides a novel agent for prophylaxis or treatment of inflammatory bowel diseases for oral administration or intra-intestinal infusion, which comprises as an active ingredient a compound of the formula (I): or a pharmaceutically acceptable salt thereof; a use of said active ingredient in preparation of an agent for prophylaxis or treatment of inflammatory bowel diseases; and a method for prophylaxis or treatment of inflammatory bowel diseases.
摘要翻译：本发明提供了用于预防或治疗口服或肠内输注的炎性肠病的新型药剂，其包含作为活性成分的式（I）化合物或其药学上可接受的盐; 所述活性成分在制备用于预防或治疗炎症性肠病的药剂中的用途; 以及预防或治疗炎症性肠病的方法。

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