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    • 3. 发明申请
    • Method of forming a read sensor using photoresist structures without undercuts which are removed using chemical-mechanical polishing (CMP) lift-off processes
    • 使用光刻胶结构形成读取传感器的方法,而不使用化学机械抛光(CMP)剥离工艺除去底切
    • US20050067374A1
    • 2005-03-31
    • US10675697
    • 2003-09-30
    • Ananda BaerMarie-Claire CyrillaFrederick DillBenjamin WangCharngye HwangMustafa Pinarbasi
    • Ananda BaerMarie-Claire CyrillaFrederick DillBenjamin WangCharngye HwangMustafa Pinarbasi
    • G11B5/31G11B5/39H01L43/08B44C1/22
    • G11B5/3903G11B5/3163
    • A method of making a read sensor which defines its stripe height before its trackwidth using photoresist layers formed without undercuts is disclosed. The photoresist layers are removed using chemical-mechanical polishing (CMP) lift-off techniques instead of using conventional solvents. In particular, a first photoresist layer is formed in a central region over a plurality of read sensor layers. End portions of the read sensor layers around the first photoresist layer are removed by ion milling to define the stripe height for the read sensor. Next, insulator layers are deposited where the end portions of the read sensor layers were removed. The first photoresist layer is then removed through mechanical interaction with a CMP pad. In subsequently defining the trackwidth for the read sensor, a second photoresist layer is formed in a central region over the remaining read sensor layers. End portions of the read sensor layers around the second photoresist layer are then removed by ion milling to define the trackwidth for the read sensor. Next, hard bias and lead layers are deposited where the end portions of the read sensor layers were removed. The second photoresist layer is then removed through mechanical interaction with the CMP pad. Preferably, protective layers (e.g. carbon) between the photoresist layers and the read sensor layers are formed prior to photoresist removal. Thus, problems including those inherent with use of photoresist structures having undercuts are eliminated.
    • 公开了一种制造读取传感器的方法,该读取传感器在其没有底切形成的光致抗蚀剂层之前在其轨道宽度之前限定其条纹高度。 使用化学机械抛光(CMP)剥离技术而不是使用常规溶剂来除去光致抗蚀剂层。 特别地,在多个读取传感器层上的中心区域中形成第一光致抗蚀剂层。 通过离子研磨去除第一光致抗蚀剂层周围的读取传感器层的端部,以限定读取传感器的条带高度。 接下来,沉积读取传感器层的端部的绝缘体层被去除。 然后通过与CMP垫的机械相互作用去除第一光致抗蚀剂层。 随后定义读取传感器的轨道宽度,在剩余的读取传感器层上的中心区域中形成第二光致抗蚀剂层。 然后通过离子铣削去除第二光致抗蚀剂层周围的读取传感器层的端部,以限定读取传感器的轨道宽度。 接下来,在读取传感器层的端部被去除的地方沉积硬偏压和引线层。 然后通过与CMP垫的机械相互作用去除第二光致抗蚀剂层。 优选地,在光致抗蚀剂去除之前形成光致抗蚀剂层和读取传感器层之间的保护层(例如碳)。 因此,消除了包括使用具有底切的光致抗蚀剂结构固有的那些问题。