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    • 5. 发明授权
    • Method of inspecting semiconductor wafer
    • 检查半导体晶圆的方法
    • US07531462B2
    • 2009-05-12
    • US11444301
    • 2006-06-01
    • Katsujiro TanzawaNorihiko TsuchiyaJunji SugamotoYukihiro Ushiku
    • Katsujiro TanzawaNorihiko TsuchiyaJunji SugamotoYukihiro Ushiku
    • H01L21/302
    • H01L22/12G01N21/9501
    • A method of inspecting a semiconductor wafer, comprises removing a device structure film on the semiconductor wafer with a chemical solution to expose a crystal surface of the semiconductor wafer; coating a protected area, which is a part of the crystal surface of the semiconductor wafer, with a mask material for protecting the crystal surface of the semiconductor wafer; etching the semiconductor wafer selectively, thereby making a crystal defect in a non-protected area, which is a part of the crystal surface of the semiconductor wafer that is not coated with the mask material, appear after the crystal surface is coated with the mask material; removing the mask material after the selective etching; carrying out quantitative measurement of the protected area and the non-protected area using an optical defect inspection apparatus or a beam-type defect inspection apparatus; and calculating the number of crystal defects of the semiconductor wafer base on the result of the measurement.
    • 一种检查半导体晶片的方法,包括用化学溶液去除半导体晶片上的器件结构膜以暴露半导体晶片的晶体表面; 用保护半导体晶片的晶体表面的掩模材料涂覆作为半导体晶片的晶体表面的一部分的保护区域; 选择性地蚀刻半导体晶片,从而在未涂覆有掩模材料的半导体晶片的晶体表面的一部分的非保护区域中出现晶体缺陷,在晶体表面涂覆有掩模材料之后 ; 在选择性蚀刻之后去除掩模材料; 使用光学缺陷检查装置或光束型缺陷检查装置进行保护区域和非保护区域的定量测量; 并根据测量结果计算半导体晶片基底的晶体缺陷数。