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1. 发明申请

US20070077033A1 Image processing device and method, display device and method, and electronic device 审中-公开
标题翻译：图像处理装置及方法，显示装置及方法及电子装置
公开(公告)号：US20070077033A1
公开(公告)日：2007-04-05
申请号：US10556721
申请日：2005-02-01
申请人： Tsuneo Shirai , Shintaro Morita , Tetsuya Shimoda
发明人： Tsuneo Shirai , Shintaro Morita , Tetsuya Shimoda
IPC分类号： H04N5/91
CPC分类号： G09G5/003 , G09G2370/04
摘要： The present invention relates to an image processing apparatus and method, a display apparatus and method, and an electronic apparatus in which a driver can be controlled by superposing panel setting data on an image signal. For example, a controller (63) supplies driver control signals to an image processor (61) by serial communications. The image processor (61) stores digital signals input from a video-signal processor (12) in a video memory (14), and reads the digital signals and executes predetermined signal processing as needed, thereby converting the digital signals into video signals having horizontal and vertical blanking periods. At this time, the image processor (61) superposes panel setting data in accordance with the driver control signals from the controller (63) on the vertical blanking periods of the converted video signals.
摘要翻译：本发明涉及图像处理装置和方法，显示装置和方法以及电子装置，其中可以通过将面板设置数据叠加在图像信号上来控制驾驶员。例如，控制器（63）通过串行通信向图像处理器（61）提供驱动器控制信号。图像处理器（61）将从视频信号处理器（12）输入的数字信号存储在视频存储器（14）中，并读取数字信号并根据需要执行预定的信号处理，从而将数字信号转换成具有水平的视频信号和垂直消隐期。此时，图像处理器61根据来自控制器（63）的驱动器控制信号，对转换的视频信号的垂直消隐期叠加面板设置数据。

2. 发明授权

US5903014A Semiconductor device for driving a substrate of an electro-optical device 失效
标题翻译：用于驱动电光装置的基板的半导体装置
公开(公告)号：US5903014A
公开(公告)日：1999-05-11
申请号：US757279
申请日：1996-11-27
申请人： Masumitsu Ino , Toshikazu Maekawa , Yuki Tashiro , Yasushi Shimogaichi , Shintaro Morita
发明人： Masumitsu Ino , Toshikazu Maekawa , Yuki Tashiro , Yasushi Shimogaichi , Shintaro Morita
IPC分类号： G02F1/136 , G02F1/1362 , G02F1/1368 , H01L21/02 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/786 , H01L29/72
CPC分类号： G02F1/13454 , H01L27/1214 , H01L29/66765 , H01L29/78621
摘要： A semiconductor device includes an insulating substrate; a plurality of pixel electrodes arranged in a matrix on the insulating substrate; first thin film transistors for individually driving the pixel electrodes; and driving circuits composed of second thin film transistors formed on the insulating substrate. In this semiconductor device, each of the first and second thin film transistors has a bottom-gate structure comprising a gate electrode patterned on the insulating substrate; a gate insulating film covering the gate electrode; and a semiconducting thin film having a channel region and a source/drain region, which is formed on the gate insulating film. Each of the second thin film transistors has a lightly doped region at least between a drain side highly doped region and the channel region. The lightly doped region mitigates an electric field concentration at a drain edge and hence suppresses harmful charges generated both in an interlayer insulating film and in the gate insulating film which are respectively brought in contact with upper and lower sides of the semiconducting thin film.
摘要翻译：半导体器件包括绝缘衬底; 在所述绝缘基板上排列成矩阵状的多个像素电极; 用于单独驱动像素电极的第一薄膜晶体管; 以及由形成在绝缘基板上的第二薄膜晶体管构成的驱动电路。在该半导体器件中，第一和第二薄膜晶体管中的每一个具有包括在绝缘基板上图案化的栅电极的底栅结构; 覆盖栅电极的栅极绝缘膜; 以及形成在栅极绝缘膜上的具有沟道区域和源极/漏极区域的半导体薄膜。每个第二薄膜晶体管至少在漏极侧高掺杂区域和沟道区域之间具有轻掺杂区域。轻掺杂区域减轻漏极边缘处的电场浓度，因此抑制了分别与半导体薄膜的上侧和下侧接触的层间绝缘膜和栅极绝缘膜中产生的有害电荷。

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