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1. 发明申请

US20130071967A1 Method for Making a Nickel Film for Use as an Electrode of an N-P Diode or Solar Cell 审中-公开
标题翻译：制造用作N-P二极管或太阳能电池的电极的镍膜的方法
公开(公告)号：US20130071967A1
公开(公告)日：2013-03-21
申请号：US13238122
申请日：2011-09-21
申请人： Yu-Han Su , Wei-Yang Ma , Tsun-Neng Yang
发明人： Yu-Han Su , Wei-Yang Ma , Tsun-Neng Yang
IPC分类号： H01L21/283 , H01L31/18
CPC分类号： H01L21/28518 , H01L21/288 , H01L31/022425 , Y02E10/50
摘要： Disclosed is a method for making a nickel film for use as an electrode of an n-p diode or solar cell. A light source is used to irradiate an n-type surface of the n-p diode or solar cell, thus producing electron-hole pairs in the n-p diode or solar cell. For the electric field effect at an n-p interface, electrons drift to and therefore accumulate on the n-type surface. With a plating agent, the diode voltage is added to the chemical potential for electroless plating of nickel on the n-type surface. The nickel film can be used as a buffer layer between a contact electrode and the diode or solar cell. The nickel film reduces the contact resistance to prevent a reduced efficiency of the diode or solar cell that would otherwise be caused by diffusion of the atoms of the electrode in following electroplating.
摘要翻译：公开了一种用于制造用作n-p二极管或太阳能电池的电极的镍膜的方法。使用光源照射n-p二极管或太阳能电池的n型表面，从而在n-p二极管或太阳能电池中产生电子 - 空穴对。对于在n-p界面处的电场效应，电子漂移并因此积聚在n型表面上。使用电镀剂，将二极管电压加入到在n型表面上进行镍化学镀的化学势。镍膜可以用作接触电极和二极管或太阳能电池之间的缓冲层。镍膜降低了接触电阻，以防止二次电池或太阳能电池的效率降低，否则二次电池或太阳能电池的效率将由电极原子在随后的电镀中扩散而引起。

2. 发明授权

US07863080B1 Process for making multi-crystalline silicon thin-film solar cells 有权
公开(公告)号：US07863080B1
公开(公告)日：2011-01-04
申请号：US12007154
申请日：2008-01-07
申请人： Tsun-Neng Yang , Shan-Ming Lan , Chin-Chen Chiang , Wei-Yang Ma , Chien-Te Ku , Yu-Hsiang Huang
发明人： Tsun-Neng Yang , Shan-Ming Lan , Chin-Chen Chiang , Wei-Yang Ma , Chien-Te Ku , Yu-Hsiang Huang
IPC分类号： H01L21/00
CPC分类号： H01L31/02168 , H01L31/03682 , H01L31/03921 , H01L31/075 , H01L31/1804 , H01L31/182 , H01L31/1864 , H01L31/202 , Y02E10/546 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： Dichlorosilane and diborane are deposited on the titanium-based alloy film to grow a p+ type back surface field film. The temperature is raised to grow a p− type light-soaking film on the p+ type back surface field film. Phosphine is deposited on the p− type light-soaking film to form an n+ type emitter. Thus, an n+-p−-p+ laminate is provided on the titanium-based alloy film. SiCNO:Ar plasma is used to passivate the n+-p−-p+ laminate, thus forming an anti-reflection film of SiCN/SiO2 on the n+ type emitter. The n+-p−-p+ laminate is etched in a patterned mask process. A p− type ohmic contact is formed on the titanium-based alloy film. The anti-reflection film is etched in a patterned mask process. The n+ type emitter is coated with a titanium/palladium/silver alloy film that is annealed in hydrogen. An n− type ohmic contact is formed on the n+ type emitter.

3. 发明申请

US20100279453A1 Method for making an anti-reflection film of a solar cell 有权
标题翻译：制造太阳能电池防反射膜的方法
公开(公告)号：US20100279453A1
公开(公告)日：2010-11-04
申请号：US12007156
申请日：2008-01-07
申请人： Tsun-Neng Yang , Shan-Ming Lan , Chin-Chen Chiang , Wei-Yang Ma , Chien-Te Ku , Yu-Hsiang Huang
发明人： Tsun-Neng Yang , Shan-Ming Lan , Chin-Chen Chiang , Wei-Yang Ma , Chien-Te Ku , Yu-Hsiang Huang
IPC分类号： H01L31/18
CPC分类号： H01L31/02168 , C23C16/36 , C23C16/505 , C23C16/56 , Y02E10/50
摘要： A method is disclosed for making an anti-reflection film of a solar cell. The method includes the step of providing a laminate. The laminate includes a ceramic substrate, a titanium-based compound film, a p+ type poly-silicon back surface field, a p− type poly-silicon light-soaking film and an n+ type poly-silicon emitter. The laminate is passivated with SiCNO:Ar plasma in a plasma-enhanced vapor deposition device, thus filling the dangling bonds of the silicon atoms at the surface of the n+ type poly-silicon emitter, the dangling bonds of the silicon grains at the grain boundaries of the p− type poly-silicon light-soaking film and the dangling bonds of the silicon atoms in the p+ type poly-silicon back surface field. Finally, the n+ type poly-silicon emitter is coated with an anti-reflection film of SiCN/SiO2.
摘要翻译：公开了制造太阳能电池的防反射膜的方法。该方法包括提供层压体的步骤。层压体包括陶瓷基板，钛基复合膜，p +型多晶硅背面场，p型多晶硅均热膜和n +型多晶硅发射体。在等离子体增强气相沉积装置中，用SiCNO：Ar等离子体钝化层压体，从而填充n +型多晶硅发射体表面的硅原子的悬挂键，晶界处的硅晶粒的悬挂键的p型多晶硅均热膜和p +型多晶硅表面场中的硅原子的悬挂键。最后，n +型多晶硅发射体涂覆有SiCN / SiO2的防反射膜。

4. 发明申请

US20100255747A1 Method for making a silicon quantum dot fluorescent lamp 有权
标题翻译：硅量子点荧光灯的制造方法
公开(公告)号：US20100255747A1
公开(公告)日：2010-10-07
申请号：US11976444
申请日：2007-10-24
申请人： Tsun-Neng Yang , Shan-Ming Lan , Chin-Chen Chiang , Wei-Yang Ma , Chien-Te Ku
发明人： Tsun-Neng Yang , Shan-Ming Lan , Chin-Chen Chiang , Wei-Yang Ma , Chien-Te Ku
IPC分类号： H01J9/00
CPC分类号： H01J63/06 , H01J63/04
摘要： A silicon quantum dot fluorescent lamp is made via providing a high voltage source between a cathode assembly and an anode assembly. The cathode assembly is made by providing a first substrate, coating a buffer layer on the first substrate, coating a catalytic layer on the buffer layer and providing a plurality of nanometer discharging elements on the catalytic layer. The anode assembly is made via providing a second substrate, coating a silicon quantum dot fluorescent film on the second substrate with and coating a metal film on the silicon quantum dot fluorescent film.
摘要翻译：通过在阴极组件和阳极组件之间提供高电压源来制造硅量子点荧光灯。阴极组件通过提供第一衬底，在第一衬底上涂覆缓冲层，在缓冲层上涂覆催化层并在催化层上提供多个纳米放电元件来制造。阳极组件通过提供第二衬底制造，在第二衬底上涂覆硅量子点荧光膜并在硅量子点荧光膜上涂覆金属膜。

5. 发明授权

US07569864B2 Silicon-rich-oxide white light photodiode 失效
标题翻译：富硅氧化物白光光电二极管
公开(公告)号：US07569864B2
公开(公告)日：2009-08-04
申请号：US11416146
申请日：2006-05-03
申请人： Tsun-Neng Yang , Shan-Ming Lan , Wei-Yang Ma
发明人： Tsun-Neng Yang , Shan-Ming Lan , Wei-Yang Ma
IPC分类号： H01L31/12 , H01L31/00
CPC分类号： H01L33/502 , H01L33/0079
摘要： A white light photodiode has a film layer and an ultraviolet (UV) photodiode. The film layer is made of an oxide rich in silicon; and is formed through a chemical vapor deposition. A white light can be generated by exciting the film layer with a UV light from the UV photodiode.
摘要翻译：白光光电二极管具有膜层和紫外（UV）光电二极管。膜层由富含硅的氧化物制成; 并通过化学气相沉积形成。可以通过用UV光电二极管的紫外线激发膜层来产生白光。

6. 发明授权

US07399654B2 Method for fabricating optical sensitive layer of solar cell having silicon quantum dots 失效
标题翻译：制造具有硅量子点的太阳能电池的光敏层的方法
公开(公告)号：US07399654B2
公开(公告)日：2008-07-15
申请号：US11367371
申请日：2006-03-06
申请人： Ming-Chang Lin , Tsun-Neng Yang , Shan-Ming Lan , Tsong-Yang Wei , Jyh-Perng Chiu , Wei-Yang Ma
发明人： Ming-Chang Lin , Tsun-Neng Yang , Shan-Ming Lan , Tsong-Yang Wei , Jyh-Perng Chiu , Wei-Yang Ma
IPC分类号： H01L21/00
CPC分类号： H01G9/2045 , B82Y20/00 , Y02E10/542
摘要： A distribution layer of silicon quantum dots are fabricated. After the layer is exposed to sun light for a while, the layer absorbs energy and produces pairs of electron and hole. By limiting the movement of the electrons and their moving directions through the structure obtained, the efficiency of an optoelectronic conversion is enhanced.
摘要翻译：制造硅量子点的分布层。在层被阳光照射一段时间之后，该层吸收能量并产生电子和空穴对。通过限制电子及其移动方向通过所获得的结构，提高了光电转换的效率。

7. 发明申请

US20100291322A1 Method for making titanium-based compound film of poly silicon solar cell 有权
标题翻译：制造多晶硅太阳能电池的钛基化合物膜的方法
公开(公告)号：US20100291322A1
公开(公告)日：2010-11-18
申请号：US11902076
申请日：2007-09-18
申请人： Tsun-Neng Yang , Shan-Ming Lan , Chin-Chen Chiang , Wei-Yang Ma , Chien-Te Ku , Yu-Hsiang Huang
发明人： Tsun-Neng Yang , Shan-Ming Lan , Chin-Chen Chiang , Wei-Yang Ma , Chien-Te Ku , Yu-Hsiang Huang
IPC分类号： C23C14/18 , C23C14/16
CPC分类号： C23C14/18 , C23C14/5806 , C23C14/5846 , H01L31/03921 , H01L31/182 , H01L31/1864 , Y02E10/546 , Y02P70/521
摘要： A method is disclosed for making a titanium-based compound film of a poly-silicon solar cell. In the method, a ceramic substrate is made of aluminum oxide. The ceramic substrate is coated with a titanium film in an e-gun evaporation system. Dichlorosilane is provided on the titanium film by atmospheric pressure chemical vapor deposition. A titanium-based compound film is formed on the ceramic substrate.
摘要翻译：公开了制造多晶硅太阳能电池的钛基化合物膜的方法。在该方法中，陶瓷基板由氧化铝制成。陶瓷基板在电子枪蒸发系统中涂覆有钛膜。通过大气压化学气相沉积在钛膜上提供二氯硅烷。在陶瓷基板上形成钛系复合膜。

8. 发明授权

US07579770B2 Spark-gap white fluorescent lamp having silicon quantum dots and preparing method thereof 失效
标题翻译：具有硅量子点的火花间隙白色荧光灯及其制备方法
公开(公告)号：US07579770B2
公开(公告)日：2009-08-25
申请号：US11510825
申请日：2006-08-28
申请人： Tsun-Neng Yang , Wei-Yang Ma
发明人： Tsun-Neng Yang , Wei-Yang Ma
IPC分类号： H01J1/62
CPC分类号： C09K11/59 , C09K11/02 , H01J61/70 , H05B33/14 , Y02B20/181
摘要： A white fluorescent lamp is prepared with a substrate and a high voltage circuit. The substrate has a fluorescent layer with silicon quantum dots. The lamp generates a white light by exciting the substrate with the circuit through a spark gap. A photoelectronic conversion is improved and a cost is lowered by using a cheap material as silicon.
摘要翻译：白色荧光灯由衬底和高压电路制成。衬底具有带有硅量子点的荧光层。该灯通过使电路通过火花隙激发衬底而产生白光。通过使用便宜的材料作为硅，改善了光电转换并降低了成本。

9. 发明申请

US20080032497A1 Preparing method of CNT-based semiconductor sensitized solar cell 失效
标题翻译： CNT-半导体敏化太阳能电池的制备方法
公开(公告)号：US20080032497A1
公开(公告)日：2008-02-07
申请号：US11490167
申请日：2006-07-21
申请人： Tsun-Neng Yang , Shan-Ming Lan , Ying-Ru Chen , Chin-Chen Chiang , Wei-Yang Ma , Chien-Te Ku
发明人： Tsun-Neng Yang , Shan-Ming Lan , Ying-Ru Chen , Chin-Chen Chiang , Wei-Yang Ma , Chien-Te Ku
IPC分类号： H01L21/4763
CPC分类号： H01L51/4213 , B82Y10/00 , H01L51/0048 , H01L51/426 , Y02E10/549
摘要： A solar cell is prepared. The solar cell is photo-sensitized. The solar cell has a semiconductor layer. And carbon nanotubes are deposited on the semiconductor layer with an arrangement. The solar cell is prepared with a reduced amount of fabrication material, a lowered fabrication cost and a prolonged lifetime.
摘要翻译：准备太阳能电池。太阳能电池是光敏的。太阳能电池具有半导体层。并且碳纳米管以一种布置沉积在半导体层上。太阳能电池的制造量减少，制造成本降低，寿命延长。

10. 发明申请

US20070207563A1 Method for fabricating optical sensitive layer of solar cell having silicon quantum dots 失效
标题翻译：制造具有硅量子点的太阳能电池的光敏层的方法
公开(公告)号：US20070207563A1
公开(公告)日：2007-09-06
申请号：US11367371
申请日：2006-03-06
申请人： Ming-Chang Lin , Tsun-Neng Yang , Shan-Ming Lan , Tsong-Yang Wei , Jyh-Perng Chiu , Wei-Yang Ma
发明人： Ming-Chang Lin , Tsun-Neng Yang , Shan-Ming Lan , Tsong-Yang Wei , Jyh-Perng Chiu , Wei-Yang Ma
IPC分类号： H01L21/00
CPC分类号： H01G9/2045 , B82Y20/00 , Y02E10/542
摘要： A distribution layer of silicon quantum dots are fabricated. After the layer is exposed to sun light for a while, the layer absorbs energy and produces pairs of electron and hole. By limiting the movement of the electrons and their moving directions through the structure obtained, the efficiency of an optoelectronic conversion is enhanced.
摘要翻译：制造硅量子点的分布层。在层被阳光照射一段时间之后，该层吸收能量并产生电子和空穴对。通过限制电子及其移动方向通过所获得的结构，提高了光电转换的效率。

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