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1. 再颁专利

USRE43426E1 Fabrication method of transparent electrode on visible light-emitting diode 有权
标题翻译：可见光发光二极管上透明电极的制作方法
公开(公告)号：USRE43426E1
公开(公告)日：2012-05-29
申请号：US13152124
申请日：2011-06-02
申请人： Tse-Liang Ying , Shi-Ming Chen
发明人： Tse-Liang Ying , Shi-Ming Chen
IPC分类号： H01L21/00
CPC分类号： H01L33/42 , Y10S438/956
摘要： A method for forming a transparent electrode on a visible light-emitting diode is described. A visible light-emitting diode element is provided, and the visible light-emitting diode element has a substrate, an epitaxial structure and a metal electrode. The metal electrode and the epitaxial structure are located on the same side of the substrate, or located respectively on the different sides of the substrate. An ohmic metal layer is formed on a surface of the epitaxial structure. The ohmic metal layer is annealed. The ohmic metal layer is removed to expose the surface of the epitaxial structure. A transparent electrode layer is formed on the exposed surface. A metal pad is formed on the transparent electrode layer.
摘要翻译：描述了在可见光发光二极管上形成透明电极的方法。提供了可见光发光二极管元件，可见光发光二极管元件具有基板，外延结构和金属电极。金属电极和外延结构位于基板的同一侧，或分别位于基板的不同侧。在外延结构的表面上形成欧姆金属层。欧姆金属层退火。去除欧姆金属层以露出外延结构的表面。在露出的表面上形成透明电极层。在透明电极层上形成金属焊盘。

2. 发明申请

US20070148798A1 Fabrication Method of Transparent Electrode on Visible Light-Emitting Diode 有权
标题翻译：透明电极在可见光发光二极管上的制作方法
公开(公告)号：US20070148798A1
公开(公告)日：2007-06-28
申请号：US11684540
申请日：2007-03-09
申请人： Tse-Liang YING , Shi-Ming Chen
发明人： Tse-Liang YING , Shi-Ming Chen
IPC分类号： H01L21/00
CPC分类号： H01L33/42 , Y10S438/956
摘要： A method for forming a transparent electrode on a visible light-emitting diode is described. A visible light-emitting diode element is provided, and the visible light-emitting diode element has a substrate, an epitaxial structure and a metal electrode. The metal electrode and the epitaxial structure are located on the same side of the substrate, or located respectively on the different sides of the substrate. An ohmic metal layer is formed on a surface of the epitaxial structure. The ohmic metal layer is annealed. The ohmic metal layer is removed to expose the surface of the epitaxial structure. A transparent electrode layer is formed on the exposed surface. A metal pad is formed on the transparent electrode layer.
摘要翻译：描述了在可见光发光二极管上形成透明电极的方法。提供了可见光发光二极管元件，可见光发光二极管元件具有基板，外延结构和金属电极。金属电极和外延结构位于基板的同一侧，或分别位于基板的不同侧。在外延结构的表面上形成欧姆金属层。欧姆金属层退火。去除欧姆金属层以露出外延结构的表面。在露出的表面上形成透明电极层。在透明电极层上形成金属焊盘。

3. 发明授权

US07192794B2 Fabrication method of transparent electrode on visible light-emitting diode 有权
标题翻译：可见光发光二极管上透明电极的制作方法
公开(公告)号：US07192794B2
公开(公告)日：2007-03-20
申请号：US10938309
申请日：2004-09-09
申请人： Tse-Liang Ying , Shi-Ming Chen
发明人： Tse-Liang Ying , Shi-Ming Chen
IPC分类号： H01L21/00
CPC分类号： H01L33/42 , Y10S438/956
摘要： A method for forming a transparent electrode on a visible light-emitting diode is described. A visible light-emitting diode element is provided, and the visible light-emitting diode element has a substrate, an epitaxial structure and a metal electrode. The metal electrode and the epitaxial structure are located on the same side of the substrate, or located respectively on the different sides of the substrate. An ohmic metal layer is formed on a surface of the epitaxial structure. The ohmic metal layer is annealed. The ohmic metal layer is removed to expose the surface of the epitaxial structure. A transparent electrode layer is formed on the exposed surface. A metal pad is formed on the transparent electrode layer.
摘要翻译：描述了在可见光发光二极管上形成透明电极的方法。提供了可见光发光二极管元件，可见光发光二极管元件具有基板，外延结构和金属电极。金属电极和外延结构位于基板的同一侧，或分别位于基板的不同侧。在外延结构的表面上形成欧姆金属层。欧姆金属层退火。去除欧姆金属层以露出外延结构的表面。在露出的表面上形成透明电极层。在透明电极层上形成金属焊盘。

4. 发明授权

US07541205B2 Fabrication method of transparent electrode on visible light-emitting diode 有权
标题翻译：可见光发光二极管上透明电极的制作方法
公开(公告)号：US07541205B2
公开(公告)日：2009-06-02
申请号：US11684540
申请日：2007-03-09
申请人： Tse-Liang Ying , Shi-Ming Chen
发明人： Tse-Liang Ying , Shi-Ming Chen
IPC分类号： H01L21/00
CPC分类号： H01L33/42 , Y10S438/956
摘要： A method for forming a transparent electrode on a visible light-emitting diode is described. A visible light-emitting diode element is provided, and the visible light-emitting diode element has a substrate, an epitaxial structure and a metal electrode. The metal electrode and the epitaxial structure are located on the same side of the substrate, or located respectively on the different sides of the substrate. An ohmic metal layer is formed on a surface of the epitaxial structure. The ohmic metal layer is annealed. The ohmic metal layer is removed to expose the surface of the epitaxial structure. A transparent electrode layer is formed on the exposed surface. A metal pad is formed on the transparent electrode layer.
摘要翻译：描述了在可见光发光二极管上形成透明电极的方法。提供了可见光发光二极管元件，可见光发光二极管元件具有基板，外延结构和金属电极。金属电极和外延结构位于基板的同一侧，或分别位于基板的不同侧。在外延结构的表面上形成欧姆金属层。欧姆金属层退火。去除欧姆金属层以露出外延结构的表面。在露出的表面上形成透明电极层。在透明电极层上形成金属焊盘。

5. 发明申请

US20060035398A1 Fabrication method of transparent electrode on visible light-emitting diode 有权
公开(公告)号：US20060035398A1
公开(公告)日：2006-02-16
申请号：US10938309
申请日：2004-09-09
申请人： Tse-Liang Ying , Shi-Ming Chen
发明人： Tse-Liang Ying , Shi-Ming Chen
IPC分类号： H01L21/00
CPC分类号： H01L33/42 , Y10S438/956
摘要： A method for forming a transparent electrode on a visible light-emitting diode is described. A visible light-emitting diode element is provided, and the visible light-emitting diode element has a substrate, an epitaxial structure and a metal electrode. The metal electrode and the epitaxial structure are located on the same side of the substrate, or located respectively on the different sides of the substrate. An ohmic metal layer is formed on a surface of the epitaxial structure. The ohmic metal layer is annealed. The ohmic metal layer is removed to expose the surface of the epitaxial structure. A transparent electrode layer is formed on the exposed surface. A metal pad is formed on the transparent electrode layer.

6. 发明申请

US20070057275A1 Vertical light-emitting diode and method for manufacturing the same 审中-公开
标题翻译：垂直发光二极管及其制造方法
公开(公告)号：US20070057275A1
公开(公告)日：2007-03-15
申请号：US11264774
申请日：2005-10-31
申请人： Shi-Ming Chen
发明人： Shi-Ming Chen
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/0079
摘要： A vertical light-emitting diode and a method for manufacturing the same are described. In the method for manufacturing the vertical light-emitting diode, a sapphire substrate is provided. An illuminant epitaxial structure is formed on the sapphire substrate. Next, a first conductivity type electrode is formed on a surface of the illuminant epitaxial structure. Then, a local removal step is performed to remove a portion of the sapphire substrate from another surface of the illuminant epitaxial structure and to expose a portion of the other surface of the illuminant epitaxial structure, wherein the other surface is opposite to the surface of the illuminant epitaxial structure. Subsequently, a second conductivity type electrode is formed on the exposed portion of the other surface of the illuminant epitaxial structure, wherein the first conductivity type electrode and the second conductivity type electrode are opposite conductivity types.
摘要翻译：对垂直发光二极管及其制造方法进行说明。在制造垂直发光二极管的方法中，提供蓝宝石衬底。在蓝宝石衬底上形成发光体外延结构。接下来，在发光体外延结构的表面上形成第一导电型电极。然后，执行局部去除步骤以从发光体外延结构的另一表面去除蓝宝石衬底的一部分，并且暴露光源外延结构的另一表面的一部分，其中另一个表面与光源外延结构。随后，在发光体外延结构的另一个表面的暴露部分上形成第二导电型电极，其中第一导电型电极和第二导电型电极是相反的导电类型。

7. 发明申请

US20060289885A1 Light-emitting diode 审中-公开
标题翻译：发光二极管
公开(公告)号：US20060289885A1
公开(公告)日：2006-12-28
申请号：US11216028
申请日：2005-09-01
申请人： Shi-Ming Chen , Chia-Yu Chang
发明人： Shi-Ming Chen , Chia-Yu Chang
IPC分类号： H01L33/00
CPC分类号： H01L33/54
摘要： A light-emitting diode (LED) is described. The light-emitting diode has a light-emitting diode chip and a package structure covering the light-emitting diode chip. A surface of the package structure has a pattern structure, in which the pattern structure includes a plurality of stria structures for controlling a light shape output by the light-emitting diode.
摘要翻译：描述了发光二极管（LED）。发光二极管具有覆盖发光二极管芯片的发光二极管芯片和封装结构。封装结构的表面具有图案结构，其中图案结构包括用于控制由发光二极管输出的光形状的多个条纹结构。

8. 发明授权

US07982238B2 Light-emitting diode 有权
标题翻译：发光二极管
公开(公告)号：US07982238B2
公开(公告)日：2011-07-19
申请号：US12200019
申请日：2008-08-28
申请人： Chang-Hsing Chu , Kui-Hui Yu , Shi-Ming Chen
发明人： Chang-Hsing Chu , Kui-Hui Yu , Shi-Ming Chen
IPC分类号： H01L33/00
CPC分类号： H01L33/642 , H01L33/0079 , H01L33/20 , H01L33/641
摘要： A light-emitting diode (LED) is provided, wherein the LED comprises an epitaxial structure, a bonding layer and a composite substrate. The composite substrate comprises a patterned substrate having a pattern and a conductive material layer disposed around the patterned substrate. The bonding layer is formed on the composite substrate. The epitaxial structure is formed on the bonding layer.
摘要翻译：提供了一种发光二极管（LED），其中LED包括外延结构，结合层和复合衬底。复合衬底包括具有图案的图案化衬底和设置在图案化衬底周围的导电材料层。接合层形成在复合基板上。在结合层上形成外延结构。

9. 发明授权

US07939834B2 Light- emitting device 失效
标题翻译：发光装置
公开(公告)号：US07939834B2
公开(公告)日：2011-05-10
申请号：US12126482
申请日：2008-05-23
申请人： Shi-Ming Chen , Chang-Hsin Chu
发明人： Shi-Ming Chen , Chang-Hsin Chu
IPC分类号： H01L27/15
CPC分类号： H01L33/642 , H01L33/20
摘要： A light-emitting device includes a substrate having an epitaxial-forming surface and a back surface opposite to the epitaxial-forming surface, the substrate being formed with a recess indented from the back surface, the back surface having a recessed portion that defines the recess, and a planar portion extending outwardly from the recessed portion; an epitaxy layer; a continuous heat-dissipating layer formed on the planar portion and the recessed portion of the back surface of the substrate; and first and second electrodes coupled electrically to the epitaxy layer.
摘要翻译：发光器件包括具有外延形成表面和与外延形成表面相对的后表面的衬底，所述衬底形成有从后表面凹陷的凹部，所述后表面具有限定凹部的凹部和从凹部向外延伸的平面部分; 外延层; 形成在基板的背面的平面部和凹部的连续散热层; 以及与外延层电连接的第一和第二电极。

10. 发明申请

US20090159899A1 LIGHT- EMITTING DEVICE 失效
标题翻译：发光装置
公开(公告)号：US20090159899A1
公开(公告)日：2009-06-25
申请号：US12126482
申请日：2008-05-23
申请人： Shi-Ming Chen , Chang-Hsin Chu
发明人： Shi-Ming Chen , Chang-Hsin Chu
IPC分类号： H01L33/00
CPC分类号： H01L33/642 , H01L33/20
摘要： A light-emitting device includes a substrate having an epitaxial-forming surface and a back surface opposite to the epitaxial-forming surface, the substrate being formed with a recess indented from the back surface, the back surface having a recessed portion that defines the recess, and a planar portion extending outwardly from the recessed portion; an epitaxy layer; a continuous heat-dissipating layer formed on the planar portion and the recessed portion of the back surface of the substrate; and first and second electrodes coupled electrically to the epitaxy layer.
摘要翻译：发光器件包括具有外延形成表面和与外延形成表面相对的后表面的衬底，所述衬底形成有从后表面凹陷的凹部，所述后表面具有限定凹部的凹部和从凹部向外延伸的平面部分; 外延层; 形成在基板的背面的平面部和凹部的连续散热层; 以及与外延层电连接的第一和第二电极。

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