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JP2013214777A Method of manufacturing optoelectronic device having bulk heterojunction 审中-公开
标题翻译：制造具有大块异位的光电器件的方法
公开(公告)号：JP2013214777A
公开(公告)日：2013-10-17
申请号：JP2013150789
申请日：2013-07-19
申请人： Trustees Of Princeton Univ , ザ、トラスティーズオブプリンストンユニバーシティ
发明人： MAX SHTEIN , YANG FAN , STEPHEN R FORREST
IPC分类号： H01L51/42 , H01L29/06 , H01L51/00
CPC分类号： B82Y30/00 , H01L51/0008 , H01L51/0053 , H01L51/0078 , H01L51/4213 , H01L51/4246 , H01L51/4253 , H01L2251/308 , Y02E10/549 , Y02P70/521
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing an organic optoelectronic device having a bulk heterojunction.SOLUTION: A method of manufacturing an optoelectronic device includes the processes of: depositing a first layer having protrusions over a first electrode; depositing a second layer on the first layer such that the second layer is in physical contact with the first layer; and depositing a second electrode over the second layer to form the optoelectronic device. The first layer includes a first organic small molecule material, and the smallest lateral dimension of the protrusions is between 1 to 5 times the exciton diffusion length of the first organic small molecule material. A method of manufacturing an organic optoelectronic device having a bulk heterojunction is also provided so as to include the processes of: depositing a first layer with protrusions over an electrode by organic vapor phase deposition; and depositing a second layer on the first layer, while the interface of the first and second layers forms a bulk heterojunction and another electrode is deposited over the second layer.
摘要翻译：要解决的问题：提供一种制造具有体异质结的有机光电子器件的方法。解决方案：制造光电子器件的方法包括以下过程：在第一电极上沉积具有突起的第一层; 在所述第一层上沉积第二层，使得所述第二层与所述第一层物理接触; 以及在所述第二层上沉积第二电极以形成所述光电器件。第一层包括第一有机小分子材料，并且突起的最小横向尺寸为第一有机小分子材料的激子扩散长度的1至5倍。还提供了制造具有体异质结的有机光电子器件的方法，以便包括以下工艺：通过有机气相沉积在电极上沉积具有突起的第一层; 以及在所述第一层上沉积第二层，而所述第一和第二层的界面形成体异质结，并且另一电极沉积在所述第二层上。

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