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    • 4. 发明专利
    • Method of manufacturing optoelectronic device having bulk heterojunction
    • 制造具有大块异位的光电器件的方法
    • JP2013214777A
    • 2013-10-17
    • JP2013150789
    • 2013-07-19
    • Trustees Of Princeton Univザ、トラスティーズ オブ プリンストン ユニバーシティ
    • MAX SHTEINYANG FANSTEPHEN R FORREST
    • H01L51/42H01L29/06H01L51/00
    • B82Y30/00H01L51/0008H01L51/0053H01L51/0078H01L51/4213H01L51/4246H01L51/4253H01L2251/308Y02E10/549Y02P70/521
    • PROBLEM TO BE SOLVED: To provide a method of manufacturing an organic optoelectronic device having a bulk heterojunction.SOLUTION: A method of manufacturing an optoelectronic device includes the processes of: depositing a first layer having protrusions over a first electrode; depositing a second layer on the first layer such that the second layer is in physical contact with the first layer; and depositing a second electrode over the second layer to form the optoelectronic device. The first layer includes a first organic small molecule material, and the smallest lateral dimension of the protrusions is between 1 to 5 times the exciton diffusion length of the first organic small molecule material. A method of manufacturing an organic optoelectronic device having a bulk heterojunction is also provided so as to include the processes of: depositing a first layer with protrusions over an electrode by organic vapor phase deposition; and depositing a second layer on the first layer, while the interface of the first and second layers forms a bulk heterojunction and another electrode is deposited over the second layer.
    • 要解决的问题:提供一种制造具有体异质结的有机光电子器件的方法。解决方案:制造光电子器件的方法包括以下过程:在第一电极上沉积具有突起的第一层; 在所述第一层上沉积第二层,使得所述第二层与所述第一层物理接触; 以及在所述第二层上沉积第二电极以形成所述光电器件。 第一层包括第一有机小分子材料,并且突起的最小横向尺寸为第一有机小分子材料的激子扩散长度的1至5倍。 还提供了制造具有体异质结的有机光电子器件的方法,以便包括以下工艺:通过有机气相沉积在电极上沉积具有突起的第一层; 以及在所述第一层上沉积第二层,而所述第一和第二层的界面形成体异质结,并且另一电极沉积在所述第二层上。
    • 10. 发明专利
    • Organic photosensitive battery grown on coarse electrode which is morphology-controlled in nanoscale
    • 有机光电池在纳米岩上进行形态控制的粗糙电极上
    • JP2008021958A
    • 2008-01-31
    • JP2007000591
    • 2007-01-05
    • Trustees Of Princeton Univザ、トラスティーズ オブ プリンストン ユニバーシティ
    • YANG FANFORREST STEPHEN R
    • H01L51/42H01L51/05H01L51/30
    • H01L51/447H01L51/0053H01L51/0078H01L51/0096H01L51/424Y02E10/549
    • PROBLEM TO BE SOLVED: To provide a method for manufacturing an opto-electronic device and the device. SOLUTION: This invention provides the opto-electronic device which includes a first electrode deposited on a substrate, and a surface from which the first electrode is exposed, having square average roughness of at least 30 nm and height change amount of at least 200 nm, wherein the first electrode is transparent, and provides the method for manufacturing the device. An conformal layer of a first organic semiconductor material is deposited on the top of the first electrode by an organic vapor phase deposition, and the first organic semiconductor material is a low molecular substance. A second organic semiconductor material layer is so deposited as to cover the conformal layer. At least some parts of the second organic semiconductor material layer are in contact with the conformal layer directly. A second electrode is so deposited as to cover the second organic semiconductor material layer. The first organic semiconductor material is a donor type or an acceptor type relating to the second organic semiconductor material which is a converse type material. COPYRIGHT: (C)2008,JPO&INPIT
    • 要解决的问题:提供一种制造光电器件和该器件的方法。 解决方案:本发明提供了一种光电器件,其包括沉积在基板上的第一电极和暴露第一电极的表面,平均平均粗糙度至少为30nm,高度变化量至少为 200nm,其中第一电极是透明的,并且提供用于制造器件的方法。 通过有机气相沉积在第一电极的顶部上沉积第一有机半导体材料的共形层,第一有机半导体材料是低分子物质。 沉积第二有机半导体材料层以覆盖保形层。 第二有机半导体材料层的至少一部分直接与保形层接触。 沉积第二电极以覆盖第二有机半导体材料层。 第一有机半导体材料是与作为相反类型材料的第二有机半导体材料相关的供体类型或受主类型。 版权所有(C)2008,JPO&INPIT