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1. 发明授权

US07367871B2 Semiconductor processing methods of removing conductive material 有权
标题翻译：去除导电材料的半导体加工方法
公开(公告)号：US07367871B2
公开(公告)日：2008-05-06
申请号：US11449201
申请日：2006-06-05
申请人： Trung Tri Doan , Scott G. Meikle
发明人： Trung Tri Doan , Scott G. Meikle
IPC分类号： B24B1/00
CPC分类号： B24B37/11 , B23H5/08 , B24B37/042 , B24B37/046 , B24B37/20 , C25F3/30 , H01L21/3212 , H01L21/32125
摘要： The invention includes a semiconductive processing method of electrochemical-mechanical removing at least some of a conductive material from over a surface of a semiconductor substrate. A cathode is provided at a first location of the wafer, and an anode is provided at a second location of the wafer. The conductive material is polished with the polishing pad polishing surface. The polishing occurs at a region of the conductive material and not at another region. The region where the polishing occurs is defined as a polishing operation location. The polishing operation location is displaced across the surface of the substrate from said second location of the substrate toward said first location of the substrate. The polishing operation location is not displaced from said first location toward said second location when the polishing operation location is between the first and second locations. The invention also includes a semiconductor processing method of removing at least some of a conductive material from over a surface of a semiconductive material wafer. A polishing pad is displaced across an upper surface of the wafer from a central region of the wafer toward a periphery of the wafer, and is not displaced from the periphery to the central region.
摘要翻译：本发明包括从半导体衬底的表面上电化学 - 机械去除至少一些导电材料的半导体处理方法。阴极设置在晶片的第一位置处，并且阳极设置在晶片的第二位置处。用抛光垫抛光表面抛光导电材料。抛光发生在导电材料的区域而不是在另一区域。抛光发生的区域被定义为抛光操作位置。抛光操作位置从衬底的所述第二位置横跨衬底的表面移动到衬底的所述第一位置。当抛光操作位置在第一和第二位置之间时，抛光操作位置不会从所述第一位置移动到所述第二位置。本发明还包括从半导体材料晶片的表面上去除至少一些导电材料的半导体加工方法。抛光垫从晶片的中心区域朝着晶片的周边跨越晶片的上表面移位，并且不会从周边移动到中心区域。

2. 发明授权

US07056194B2 Semiconductor processing methods of removing conductive material 失效
公开(公告)号：US07056194B2
公开(公告)日：2006-06-06
申请号：US10871126
申请日：2004-06-18
申请人： Trung Tri Doan , Scott G. Meikle
发明人： Trung Tri Doan , Scott G. Meikle
IPC分类号： B24B1/00
CPC分类号： B24B37/11 , B23H5/08 , B24B37/042 , B24B37/046 , B24B37/20 , C25F3/30 , H01L21/3212 , H01L21/32125
摘要： The invention includes a semiconductive processing method of electrochemical-mechanical removing at least some of a conductive material from over a surface of a semiconductor substrate. A cathode is provided at a first location of the wafer, and an anode is provided at a second location of the wafer. The conductive material is polished with the polishing pad polishing surface. The polishing occurs at a region of the conductive material and not at another region. The region where the polishing occurs is defined as a polishing operation location. The polishing operation location is displaced across the surface of the substrate from said second location of the substrate toward said first location of the substrate. The polishing operation location is not displaced from said first location toward said second location when the polishing operation location is between the first and second locations. The invention also includes a semiconductor processing method of removing at least some of a conductive material from over a surface of a semiconductive material wafer. A polishing pad is displaced across an upper surface of the wafer from a central region of the wafer toward a periphery of the wafer, and is not displaced from the periphery to the central region.

3. 发明授权

US06790130B2 Semiconductor processing methods of removing conductive material 失效
公开(公告)号：US06790130B2
公开(公告)日：2004-09-14
申请号：US10600907
申请日：2003-06-20
申请人： Trung Tri Doan , Scott G. Meikle
发明人： Trung Tri Doan , Scott G. Meikle
IPC分类号： B24B100
CPC分类号： B24B37/11 , B23H5/08 , B24B37/042 , B24B37/046 , B24B37/20 , C25F3/30 , H01L21/3212 , H01L21/32125
摘要： The invention includes a semiconductive processing method of electrochemical-mechanical removing at least some of a conductive material from over a surface of a semiconductor substrate. A cathode is provided at a first location of the wafer, and an anode is provided at a second location of the wafer. The conductive material is polished with the polishing pad polishing surface. The polishing occurs at a region of the conductive material and not at another region. The region where the polishing occurs is defined as a polishing operation location. The polishing operation location is displaced across the surface of the substrate from said second location of the substrate toward said first location of the substrate. The polishing operation location is not displaced from said first location toward said second location when the polishing operation location is between the first and second locations. The invention also includes a semiconductor processing method of removing at least some of a conductive material from over a surface of a semiconductive material wafer. A polishing pad is displaced across an upper surface of the wafer from a central region of the wafer toward a periphery of the wafer, and is not displaced from the periphery to the central region.

4. 发明授权

US06582281B2 Semiconductor processing methods of removing conductive material 有权
公开(公告)号：US06582281B2
公开(公告)日：2003-06-24
申请号：US09534820
申请日：2000-03-23
申请人： Trung Tri Doan , Scott G. Meikle
发明人： Trung Tri Doan , Scott G. Meikle
IPC分类号： B24B100
CPC分类号： B24B37/11 , B23H5/08 , B24B37/042 , B24B37/046 , B24B37/20 , C25F3/30 , H01L21/3212 , H01L21/32125
摘要： The invention includes a semiconductive processing method of electrochemical-mechanical removing at least some of a conductive material from over a surface of a semiconductor substrate. A cathode is provided at a first location of the wafer, and an anode is provided at a second location of the wafer. The conductive material is polished with the polishing pad polishing surface. The polishing occurs at a region of the conductive material and not at another region. The region where the polishing occurs is defined as a polishing operation location. The polishing operation location is displaced across the surface of the substrate from said second location of the substrate toward said first location of the substrate. The polishing operation location is not displaced from said first location toward said second location when the polishing operation location is between the first and second locations. The invention also includes a semiconductor processing method of removing at least some of a conductive material from over a surface of a semiconductive material wafer. A polishing pad is displaced across an upper surface of the wafer from a central region of the wafer toward a periphery of the wafer, and is not displaced from the periphery to the central region.

5. 发明授权

US5989470A Method for making polishing pad with elongated microcolumns 失效
标题翻译：用细长的微柱制造抛光垫的方法
公开(公告)号：US5989470A
公开(公告)日：1999-11-23
申请号：US904657
申请日：1997-08-01
申请人： Trung Tri Doan , Scott G. Meikle
发明人： Trung Tri Doan , Scott G. Meikle
IPC分类号： B24B37/26 , B24D11/00 , B24D13/14 , H01L21/304 , B32B31/06 , B29B17/00 , B29C31/08
CPC分类号： B24B37/26 , B24D11/00 , Y10S451/921
摘要： A polishing pad for use in chemical-mechanical planarization (CMP) of semiconductor wafers includes a multiplicity of elongated microcolumns embedded in a matrix material body. The elongated microcolumns are oriented parallel to each other and extend from a planarizing surface used to planarize the semiconductor wafers. The elongated microcolumns are uniformly distributed throughout the polishing pad in order to impart uniform properties throughout the polishing pad. The polishing pad can also include elongated pores either coaxial width or interspersed between the elongated microcolumns to provide uniform porosity throughout the polishing pad.
摘要翻译：用于半导体晶片的化学机械平面化（CMP）的抛光垫包括嵌入基体材料体中的多个细长的微柱。细长的微柱彼此平行取向并从用于平坦化半导体晶片的平坦化表面延伸。细长的微柱均匀分布在整个抛光垫中，以便在整个抛光垫中赋予均匀的性能。抛光垫还可以包括细长孔，其同轴宽度或散布在细长微柱之间，以在整个抛光垫中提供均匀的孔隙。

6. 发明授权

US5795218A Polishing pad with elongated microcolumns 失效
标题翻译：抛光垫带细长的微柱
公开(公告)号：US5795218A
公开(公告)日：1998-08-18
申请号：US723901
申请日：1996-09-30
申请人： Trung Tri Doan , Scott G. Meikle
发明人： Trung Tri Doan , Scott G. Meikle
IPC分类号： B24B37/26 , B24D11/00 , B24D13/14 , H01L21/304
CPC分类号： B24B37/26 , B24D11/00 , Y10S451/921
摘要： A polishing pad for use in chemical-mechanical planarization (CMP) of semiconductor wafers includes a multiplicity of elongated microcolumns embedded in a matrix material body. The elongated microcolumns are oriented parallel to each other and extend from a planarizing surface used to planarize the semiconductor wafers. The elongated microcolumns are uniformly distributed throughout the polishing pad in order to impart uniform properties throughout the polishing pad. The polishing pad can also include elongated pores either coaxial width or interspersed between the elongated microcolumns to provide uniform porosity throughout the polishing pad.
摘要翻译：用于半导体晶片的化学机械平面化（CMP）的抛光垫包括嵌入基体材料体中的多个细长的微柱。细长的微柱彼此平行取向并从用于平坦化半导体晶片的平坦化表面延伸。细长的微柱均匀分布在整个抛光垫中，以便在整个抛光垫中赋予均匀的性能。抛光垫还可以包括细长孔，其同轴宽度或散布在细长微柱之间，以在整个抛光垫中提供均匀的孔隙。

7. 发明授权

US08048287B2 Method for selectively removing conductive material from a microelectronic substrate 有权
标题翻译：从微电子衬底选择性去除导电材料的方法
公开(公告)号：US08048287B2
公开(公告)日：2011-11-01
申请号：US12580941
申请日：2009-10-16
申请人： Whonchee Lee , Scott E. Moore , Scott G. Meikle
发明人： Whonchee Lee , Scott E. Moore , Scott G. Meikle
IPC分类号： C25F3/16
CPC分类号： B24B37/12 , B23H3/00 , B23H3/02 , B23H5/08 , B24B37/046 , B24B37/30 , C25F3/14 , C25F7/00
摘要： Methods and apparatuses for selectively removing conductive materials from a microelectronic substrate. A method in accordance with an embodiment of the invention includes positioning the microelectronic substrate proximate to and spaced apart from an electrode pair that includes a first electrode and a second electrode spaced apart from the first electrode. An electrolytic liquid can be directed through a first flow passage to an interface region between the microelectronic substrate and the electrode pair. A varying electrical signal can be passed through the electrode pair and the electrolytic liquid to remove conductive material from the microelectronic substrate. The electrolytic liquid can be removed through a second flow passage proximate to the first flow passage and the electrode pair.
摘要翻译：用于从微电子衬底选择性去除导电材料的方法和装置。根据本发明的实施例的方法包括将微电子基板定位在靠近并与电极对间隔开的位置，电极对包括第一电极和与第一电极间隔开的第二电极。电解液可以通过第一流动通道引导到微电子衬底和电极对之间的界面区域。可以将变化的电信号通过电极对和电解液体以从微电子衬底去除导电材料。可以通过靠近第一流动通道和电极对的第二流动通道去除电解液体。

8. 发明授权

US07220166B2 Methods and apparatus for electromechanically and/or electrochemically-mechanically removing conductive material from a microelectronic substrate 有权
标题翻译：从微电子衬底机电和/或电化学 - 机械去除导电材料的方法和装置
公开(公告)号：US07220166B2
公开(公告)日：2007-05-22
申请号：US10230970
申请日：2002-08-29
申请人： Whonchee Lee , Scott E. Moore , Scott G. Meikle
发明人： Whonchee Lee , Scott E. Moore , Scott G. Meikle
IPC分类号： B24B1/00
CPC分类号： B23H5/08 , B24B37/042 , C25F3/02 , C25F7/00
摘要： Methods and apparatuses for electromechanically and/or electrochemically-mechanically removing conductive material from a microelectronic substrate. An apparatus in accordance with one embodiment includes a support member configured to releasably carry a microelectronic substrate and first and second electrodes spaced apart from each other and from the microelectronic substrate. A polishing medium is positioned between the electrodes and the support member and has a polishing surface positioned to contact the microelectronic substrate. At least a portion of the first and second electrodes can be recessed from the polishing surface. A liquid, such as an electrolytic liquid, can be provided in the recess, for example, through flow passages in the electrodes and/or the polishing medium. A variable electrical signal is passed from at least one of the electrodes, through the electrolyte and to the microelectronic substrate to remove material from the substrate.
摘要翻译：从微电子衬底机电和/或电化学机械去除导电材料的方法和装置。根据一个实施例的装置包括被配置为可释放地携带微电子衬底和彼此间隔开的微电子衬底的第一和第二电极的支撑构件。抛光介质位于电极和支撑构件之间，并且具有定位成接触微电子衬底的抛光表面。第一和第二电极的至少一部分可以从抛光表面凹陷。诸如电解液体的液体可以例如通过电极和/或抛光介质中的流动通道设置在凹部中。可变电信号从至少一个电极通过电解质并传递到微电子衬底以从衬底去除材料。

9. 发明授权

US07151056B2 Method and apparatus for forming a planarizing pad having a film and texture elements for planarization of microelectronic substrates 失效
标题翻译：用于形成具有用于微电子基板的平坦化的膜和纹理元件的平坦化焊盘的方法和装置
公开(公告)号：US07151056B2
公开(公告)日：2006-12-19
申请号：US10662901
申请日：2003-09-15
申请人： Scott G. Meikle
发明人： Scott G. Meikle
IPC分类号： H01L21/302
CPC分类号： B24B37/24 , B24B37/245 , B24B37/26 , B24D18/00
摘要： A planarizing pad for planarizing a microelectronic substrate, and a method and apparatus for forming the planarizing pad. In one embodiment, planarizing pad material is mixed with compressed gas to form a plurality of discrete elements that are distributed on a film support material. The film support material is supported by a liquid and is drawn from the liquid with a backing layer. At least a portion of the discrete elements are spaced apart from each other on the film support material to form a textured surface for engaging a microelectronic substrate and removing material from the microelectronic substrate. The discrete elements can be uniformly or randomly distributed on the film support material.
摘要翻译：用于平坦化微电子衬底的平坦化焊盘，以及用于形成平坦化焊盘的方法和装置。在一个实施例中，平面化焊盘材料与压缩气体混合以形成分布在膜支撑材料上的多个分立元件。薄膜支撑材料由液体支撑并且由具有背衬层的液体拉出。离散元件的至少一部分在膜支撑材料上彼此间隔开以形成用于接合微电子衬底并从微电子衬底去除材料的纹理表面。离散元件可以均匀地或随机地分布在膜支撑材料上。

10. 发明授权

US07118445B2 Semiconductor workpiece processing methods, a method of preparing semiconductor workpiece process fluid, and a method of delivering semiconductor workpiece process fluid to a semiconductor processor 失效
公开(公告)号：US07118445B2
公开(公告)日：2006-10-10
申请号：US09814260
申请日：2001-03-21
申请人： Scott E. Moore , Scott G. Meikle , Magdel Crum
发明人： Scott E. Moore , Scott G. Meikle , Magdel Crum
IPC分类号： B24B49/00 , B24B51/00 , B24B1/00
CPC分类号： B24B37/04 , B24B49/10 , B24B57/02
摘要： Semiconductor processor systems, systems configured to provide a semiconductor workpiece process fluid, semiconductor workpiece processing methods, methods of preparing semiconductor workpiece process fluid, and methods of delivering semiconductor workpiece process fluid to a semiconductor processor are provided. One aspect of the invention provides a semiconductor processor system including a process chamber adapted to process at least one semiconductor workpiece using a process fluid; a connection coupled with the process chamber and configured to receive the process fluid; a sensor coupled with the connection and configured to output a signal indicative of the process fluid; and a control system coupled with the sensor and configured to control at least one operation of the semiconductor processor system responsive to the signal.

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