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1. 发明专利

JP2006075133A Method for producing lactic acid 有权
标题翻译：生产乳酸的方法
公开(公告)号：JP2006075133A
公开(公告)日：2006-03-23
申请号：JP2004265655
申请日：2004-09-13
申请人： Toyota Central Res & Dev Lab Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： YAMAGUCHI IKUO , SAOTOME OSAMU , KUROMIYA SHIGERU , ONISHI TORU , HOYA NORIKO , SAITO SATOSHI , MORI MAKOTO , NAKANO MITSURU , USUKI ARIMITSU , ISHIDA NOBUHIRO , TOKUHIRO TATEO , NAGAMORI EIJI , TAKAHASHI HARUO
IPC分类号： C12P7/56 , C12N1/19 , C12N15/09
CPC分类号： C12P7/56 , C12N9/0006
摘要： PROBLEM TO BE SOLVED: To provide a method for producing lactic acid in high optical purity that is not conventionally attained. SOLUTION: Reduction in optical purity of lactic acid is found as a result of the progress of the racemization reaction of lactic acid in the case of using lactic acid and glycerol. The optical purity of lactic acid after heating and concentration is kept high by reducing the amount of glycerol before heating and concentrating lactic acid. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：待解决的问题：提供一种以往不能得到的高纯度的高纯度乳酸的制造方法。解决方案：使用乳酸和甘油的情况下，乳酸的外消旋化反应进行的结果，发现乳酸的光学纯度降低。加热浓缩后乳酸的光学纯度通过在加热和浓缩乳酸之前减少甘油的量而保持较高。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2007031361A Method for producing lactate 有权
标题翻译：生产羊皮的方法
公开(公告)号：JP2007031361A
公开(公告)日：2007-02-08
申请号：JP2005217749
申请日：2005-07-27
申请人： Toyota Motor Corp , トヨタ自動車株式会社
发明人： KUROMIYA SHIGERU , SAOTOME OSAMU , YAMAGUCHI IKUO , HABU KAZUNORI
IPC分类号： C07C67/08 , C07C67/54 , C07C69/68
CPC分类号： C12P7/62 , C07C67/08 , C07C69/68
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a lactate, which enables the reduction of energy charged in a process for producing the lactate, the lowering of chemical cost, and the reduction of installation cost.
SOLUTION: This method for producing the lactate comprises a process for performing an esterification reaction in a reaction solution containing ammonium lactate and alcohol obtained by fermentation and having an ammonia concentration of ≤1.0 wt.%, and a process for recovering the lactate synthesized in the above-mentioned process.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种生产乳酸盐的方法，其能够降低在生产乳酸盐的过程中带电的能量，降低化学成本和降低安装成本。解决方案：这种乳酸盐的制造方法包括在含有乳酸铵和醇的反应液中进行酯化反应的方法，所述乳酸铵和醇通过发酵获得，氨浓度≤1.0重量％，和回收乳酸盐的方法在上述方法中合成。版权所有（C）2007，JPO＆INPIT

3. 发明专利

JP2009256210A Method and device for producing purified cyclic dimer of lactic acid, and method and device for producing polylactic acid 有权
标题翻译：用于生产纯化的酸性环状二聚体的方法和装置，以及用于生产聚酸的方法和装置
公开(公告)号：JP2009256210A
公开(公告)日：2009-11-05
申请号：JP2008103580
申请日：2008-04-11
申请人： Hitachi Plant Technologies Ltd , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社日立プラントテクノロジー
发明人： KAMIKAWA MASAYUKI , MATSUO TOSHIAKI , OKAMOTO SHIGEYASU , OKA KENICHIRO , KAWAMOTO TATSUJI , KUROMIYA SHIGERU , HABU KAZUNORI
IPC分类号： C07D319/12 , C08G63/08
摘要： PROBLEM TO BE SOLVED: To provide a method of efficiently obtaining lactide, and a device therefor.
SOLUTION: The method for producing purified lactide comprising a depolymerization process of depolymerizing a condensation product of lactic acid obtained by subjecting lactic acid to a condensation reaction to obtain gaseous lactide, a condensing process of condensing the gaseous lactide, a purification process of separating the condensed lactide into purified lactide comprising optically active lactide that is either L-lactide or D-lactide and a purification residue other than the purified lactide, an evaporation/separation process of separating the purification residue into lactide and an evaporation/separation residue other than lactide by evaporating the lactide present in the purification residue, is characterized by causing the lactide separated in the evaporation/separation process to condense and reusing the condensed lactide in the purification process. A device therefor is provided.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供有效地获得丙交酯的方法及其装置。解决方案：纯化丙交酯的制造方法，其包括使通过乳酸进行缩合反应得到的乳酸缩合物解聚，得到气态丙交酯的缩聚反应，缩合气态丙交酯的缩合工序，将冷凝的丙交酯分离成包含L-丙交酯或D-丙交酯的光学活性丙交酯和除了纯化的丙交酯之外的纯化残留物的纯化丙交酯，将纯化残留物分离成丙交酯的蒸发/分离过程和其他蒸发/分离残余物通过蒸发纯化残留物中存在的丙交酯，其特征在于在蒸发/分离过程中分离的丙交酯在纯化过程中冷凝并重新使用缩合丙交酯。提供了一种设备。版权所有（C）2010，JPO＆INPIT

4. 发明专利

JPH0917856A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0917856A
公开(公告)日：1997-01-17
申请号：JP16635995
申请日：1995-06-30
申请人： TOYOTA MOTOR CORP
发明人： KUROMIYA SHIGERU , MASE AKIRA , KUSHIDA TOMOYOSHI
IPC分类号： H01L21/762 , H01L21/76 , H01L27/12
摘要： PURPOSE: To prevent a step in a trench region surface by simplifying a manufacturing process when a trench is formed by adopting a method including formation of a trench by etching a semiconductor substrate from an opening part formed in a first insulation film covering a surface of a semiconductor and a second film of a large etching velocity. CONSTITUTION: When a semiconductor device with a trench 22 is manufactured, a first insulation film 16 is formed to cover a surface of a semiconductor substrate 10 and a second film 18 whose etching velocity is larger than that of the first insulation film 16 is formed to cover a surface of the first insulation film 16. Then, an opening part 21 is formed in the first insulation film 16 and the second film 18 and a trench 22 is formed in the semiconductor substrate 10 from the opening part 21 by etching by using the first insulation film 16 and the second film 18 as a mask. After the second film 18 is removed by etching, a filler is put in the trench 22. For example, the first insulation film 16 is made a heat oxide film and the second film 18 is made a CVD oxide film or an SOG film.

5. 发明专利

JPH11121605A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH11121605A
公开(公告)日：1999-04-30
申请号：JP28874197
申请日：1997-10-21
申请人： TOYOTA MOTOR CORP
发明人： KUROMIYA SHIGERU , SAITO HIROKAZU , MASE AKIRA
IPC分类号： H01L21/76
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which simplifies the trench surface planarizing step, after filling trenches to improve productivity. SOLUTION: This manufacturing method comprises mixing a P-dopant gas (such as phosphine PH3 ) with a reaction gas and forming a doped polycrystalline Si film 5 of a specified thickness through CVD, forming a nondoped polycrystalline Si film 6 on this Si film 5 by the CVD, isotropically etching off the polycrystalline Si films 5, 6 on a surface oxide film 2 to obtain a flat filler surface B and oxidizing the Si films 5, 6 until the step at the boundaries between the surface oxide film 2 and trenches 4 disappear.

6. 发明专利

JP2001204464A METHOD OF PRODUCING LACTIC ACID 失效
公开(公告)号：JP2001204464A
公开(公告)日：2001-07-31
申请号：JP2000018826
申请日：2000-01-27
申请人： TOYOTA MOTOR CORP
发明人： KUROMIYA SHIGERU , MATSUO YASUO , SAITO SATOSHI , YAMAGUCHI IKUO , SAOTOME OSAMU
IPC分类号： C12N15/00 , C12N1/15 , C12N1/19 , C12P7/56 , C12R1/865
摘要： PROBLEM TO BE SOLVED: To provide a method of producing lactic acid low in cost with high productivity. SOLUTION: The saccharified raw material is fermented with an aciduric microorganism, and the objective lactic acid is collected from the resultant fermentation mixture.

7. 发明专利

JP2002128727A METHOD FOR DISTILLING AND PURIFYING LACTIC ACID 失效
公开(公告)号：JP2002128727A
公开(公告)日：2002-05-09
申请号：JP2000318009
申请日：2000-10-18
申请人： TOYOTA MOTOR CORP
发明人： KUROMIYA SHIGERU , YAMAGUCHI IKUO , MATSUO YASUO
IPC分类号： C12P7/56 , B01D3/00 , C07C51/44 , C07C59/08
摘要： PROBLEM TO BE SOLVED: To provide a method for distilling and purifying lactic acid at a low cost in high productivity. SOLUTION: This method for distilling and purifying lactic acid is characterized in that a solution of lactic acid fermentation is distilled while adding water to the solution so as to make a water concentration in the solution constant.

8. 发明专利

JPH08204019A IIL SEMICONDUCTOR DEVICE AND ITS PRODUCTION 失效
公开(公告)号：JPH08204019A
公开(公告)日：1996-08-09
申请号：JP1151595
申请日：1995-01-27
申请人： TOYOTA MOTOR CORP
发明人： KUROMIYA SHIGERU
IPC分类号： H01L27/082 , H01L21/8226 , H01L21/8228
摘要： PURPOSE: To provide an IIL semiconductor device by which the current amplification factor β of reverse NPN transistor and current transport factor α of lateral PNP transistor can be both improved. CONSTITUTION: An IIL semiconductor device is combined with a lateral PNP transistor and reverse NPN transistor, and the impurity concentration of an N-counter doped layer as base area for the lateral PNP transistor is made lower than those of an N-well layer 4 and N isolation layer 5 as emitter area for the reverse NPN transistor.

9. 发明专利

JPH0737975A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0737975A
公开(公告)日：1995-02-07
申请号：JP18271793
申请日：1993-07-23
申请人： TOYOTA MOTOR CORP
发明人： KUROMIYA SHIGERU
IPC分类号： H01L21/76 , H01L21/331 , H01L29/73 , H01L29/732
摘要： PURPOSE:To reduce the area of the element region of a semiconductor device for an integrated circuit while the breakdown strength of the element is maintained. CONSTITUTION:A first semiconductor region 13 which contains a one conductivity type semiconductor buried layer 12, a one conductivity type semiconductor layer 13a which has a low impurity concentration than the buried layer 12 and touches the buried layer 12 and an other conductivity type semiconductor layer 13b which touches the semiconductor layer 13a, a one conductivity type second semiconductor region 16 which is formed over a region form a substrate surface 10 to a part touching the buried layer 12 and an insulating layer 15a which isolates at least the other conductivity type semiconductor layer 13b in the first semiconductor region 13 and the second semiconductor region 16 from each other are provided.

10. 发明专利

JPH06310524A THIN FILM SEMICONDUCTOR DEVICE WITH IMPROVED BREAKDOWN STRENGTH 失效
公开(公告)号：JPH06310524A
公开(公告)日：1994-11-04
申请号：JP9459993
申请日：1993-04-21
申请人： TOYOTA MOTOR CORP
发明人： KUROMIYA SHIGERU
IPC分类号： H01L27/12 , H01L21/331 , H01L29/73
摘要： PURPOSE:To acquire necessary breakdown strength without increasing an area necessary for element formation by forming a dielectric isolation groove passing through an upper surface layer between a base region and a collector region. CONSTITUTION:An emitter region 13, a base region 14 and a collector region 15 are formed one by one along a main surface of a semiconductor layer 12 formed on an insulating supporting substrate 10. At least one region of the base region 14 and the collector region 15 has an impurity high concentration region formed inside an upper surface layer of the semiconductor layer 12 and an impurity low concentration region formed in a lower surface layer. A dielectric isolation groove 19 passing through an upper surface layer is further formed between the base region 14 and the collector region 15. The base region 14 and the emitter region 13 are connected because of the presence of the dielectric isolation groove 19 through an impurity low concentration region which is made to remain in a lower part of the impurity high concentration region formed inside the upper surface layer. Necessary breakdown strength characteristic can be acquired due to the presence of the impurity low concentration region.

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