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1. 发明专利

JP2008028002A Light-receiving device, and its manufacturing method 审中-公开
标题翻译：光接收装置及其制造方法
公开(公告)号：JP2008028002A
公开(公告)日：2008-02-07
申请号：JP2006196486
申请日：2006-07-19
申请人： Toyota Central Res & Dev Lab Inc , Toyota Gakuen , 学校法人トヨタ学園 , 株式会社豊田中央研究所
发明人： OZAWA TAKAHIRO , OSAWA JUN
IPC分类号： H01L31/108
摘要： PROBLEM TO BE SOLVED: To provide a light-receiving device that converts light of at least two kinds of wavelength regions into a current. SOLUTION: The light-receiving device 10 is provided with a first electrode 32, a second electrode 34, and a light-receiving region 20 provided between the first electrode 32 and the second electrode 34. The light-receiving region 20 has a first partial light-receiving region 26, and a second partial light-receiving region 28 that respectively have different band gap widths. The light-receiving device 10 is composed so that ultraviolet light is absorbed with the first partial light-receiving region 26 so as to be converted into a positive current flowing between the first electrode 32 and the second electrode 34, and blue light is absorbed with the second partial light-receiving region 28 so as to be converted into a negative current flowing between the first electrode 32 and the second electrode 34. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种将至少两种波长区域的光转换为电流的光接收装置。解决方案：光接收装置10设置有设置在第一电极32和第二电极34之间的第一电极32，第二电极34和光接收区域20.光接收区域20具有分别具有不同带隙宽度的第一部分光接收区域26和第二部分光接收区域28。光接收装置10被构成为使得紫外光被第一部分光接收区域26吸收，以便转换为在第一电极32和第二电极34之间流动的正电流，并且蓝光被第二部分光接收区域28，以便转换成在第一电极32和第二电极34之间流动的负电流。版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2007158128A Group iii nitride-based compound semiconductor optical element 有权
标题翻译：第III类氮化物化合物半导体光学元件
公开(公告)号：JP2007158128A
公开(公告)日：2007-06-21
申请号：JP2005352722
申请日：2005-12-06
申请人： Toyoda Gosei Co Ltd , Toyota Central Res & Dev Lab Inc , 株式会社豊田中央研究所 , 豊田合成株式会社
发明人： KAMIMURA TOSHIYA , HORIUCHI SHIGEMI , OZAWA TAKAHIRO
IPC分类号： H01L33/32 , H01L33/38 , H01L33/42
摘要： PROBLEM TO BE SOLVED: To optimize an electrode shape of an n layer side and a p layer side on top and bottom with a light-emitting region interposed. SOLUTION: The group III nitride-based compound semiconductor light-emitting element 1000 has an n-type silicon substrate 200 having conductive multilayer films on both surfaces as a supporting substrate. In the element, a transparent electrode 121-t consisting of ITO, a connection 121-c consisting of nickel (Ni), and a highly reflective metal layer 121-r consisting of aluminum (Al) are formed on the p side, and are electrically connected to the n-type silicon substrate 200 by a gold-tin solder (Au-20Sn) 50 via a multilayer metal film. In the light-emitting element 1000, a region where a multilayer metal film 130 is not formed as an n-electrode formed into a window frame is a light extracting region. For the shape of the connection 121-c consisting of nickel (Ni) of the p electrode side and the shape of the multilayer metal film 130 as an n electrode, orthographic projections do not overlap on each of light-emitting region L planes, and they are separated with a distance of 20 μm or more on either position. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了使介于发光区域的顶层和底部的n层侧和p层侧的电极形状优化。解决方案：III族氮化物系化合物半导体发光元件1000具有在两面具有导电性多层膜的n型硅衬底200作为支撑衬底。在该元件中，在p侧形成由ITO构成的透明电极121-t，由镍（Ni）构成的连接部121-c和由铝（Al）构成的高反射性金属层121-r，通过金 - 锡焊料（Au-20Sn）50经由多层金属膜与n型硅衬底200电连接。在发光元件1000中，未形成多层金属膜130的形成为窗框的n电极的区域是光提取区域。对于由p电极侧的镍（Ni）构成的连接部121-c的形状和作为n电极的多层金属膜130的形状，在每个发光区域L平面上不重叠正交突起，它们在任一位置上以20μm或更大的距离分开。版权所有（C）2007，JPO＆INPIT

3. 发明专利

JP2003332619A Semiconductor light emitting element 审中-公开
标题翻译：半导体发光元件
公开(公告)号：JP2003332619A
公开(公告)日：2003-11-21
申请号：JP2003164330
申请日：2003-06-09
申请人： Toyoda Gosei Co Ltd , Toyota Central Res & Dev Lab Inc , 株式会社豊田中央研究所 , 豊田合成株式会社
发明人： KOIDE NORIKATSU , KOIKE MASAYOSHI , UMEZAKI JUNICHI , WAKIGUCHI MITSUO , ASAMI SHINYA , ITO KENJI , KACHI TORU , TOMITA KAZUYOSHI , OZAWA TAKAHIRO
IPC分类号： H01L33/06 , H01L33/08 , H01L33/12 , H01L33/32 , H01L33/40 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To retrieve light from a substrate side by emitting light of arbitrary chromaticity (saturation, hue) by a single pixel. SOLUTION: A semiconductor light emitting element comprises a first light emitting layer 3 and a second light emitting layer 9 laminated on a substrate 1 to emit lights of different chromaticities so that the first layer 3 is formed in a multiple quantum well structure. Since a forbidden band width can be changed by changing a crystal ratio of the layer 3 to the layer 9, the peak wavelength of the emitting light can be changed by the crystal ratio, and wavelength intensity characteristics of combined light of the lights emitted from the layers 3 and 9 are set to desired characteristics. Accordingly, the light having the arbitrary chromaticity can be emitted from the single pixel. The element also comprises a buffer layer 6 provided between the layer 3 and the layer 9, and since the light emitted from the layer 3 to an electrode 14 side is reflected to the substrate 1 side by the layer 6, the retrieving efficiency of the light from the substrate 1 side can be enhanced. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：通过以单个像素发出任意色度（饱和度，色调）的光来从基板侧检索光。解决方案：半导体发光元件包括层叠在基板1上的第一发光层3和第二发光层9，以发射不同色度的光，使得第一层3形成为多量子阱结构。由于可以通过改变层3与层9的晶体比来改变禁带宽度，所以可以通过晶体比改变发光的峰值波长，并且可以改变发射的光的组合光的波长强度特性层3和9被设置为期望的特性。因此，可以从单个像素发射具有任意色度的光。该元件还包括设置在层3和层9之间的缓冲层6，并且由于从层3发射到电极14侧的光被层6反射到衬底1侧，所以光的检索效率从基板1侧可以得到增强。版权所有（C）2004，JPO

4. 发明专利

JP2002368265A Iii nitride compound semiconductor light-emitting device 有权
标题翻译： III氮化物半导体发光器件
公开(公告)号：JP2002368265A
公开(公告)日：2002-12-20
申请号：JP2001174912
申请日：2001-06-08
申请人： Toyoda Gosei Co Ltd , Toyota Central Res & Dev Lab Inc , 株式会社豊田中央研究所 , 豊田合成株式会社
发明人： OZAWA TAKAHIRO , SHIBATA NAOKI
IPC分类号： H01L33/06 , H01L33/12 , H01L33/32 , H01L33/42 , H01L33/50 , H01L33/00
CPC分类号： H01L33/08 , H01L25/167 , H01L33/50 , H01L2224/49107 , H01L2924/01025 , H01L2924/01066 , H01L2924/01067 , H01L2924/01068 , H01L2924/01079
摘要： PROBLEM TO BE SOLVED: To provide a III nitride compound semiconductor light-emitting device which is capable of emitting light, whose color is different from that of light emitted from the light-emitting layer, by changing a part of light emitted from the light-emitting layer in wavelength, low in manufacturing cost, uniform in quality, and capable of emitting light with high efficiency.
SOLUTION: The photo-excited semiconductor layer, whose band gap energy is smaller than that of the light-emitting layer is provided between a substrate and the light-emitting layer of III nitride compound semiconductor. The photo- excited semiconductor layer receives light emitted from the light-emitting layer and emits light of longer wavelength than that of the received light.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供一种III族氮化物化合物半导体发光器件，其能够发射其颜色不同于从发光层发射的光的颜色，通过改变从发光层发射的光的一部分，发光层的制造成本低，质量均匀，能够高效率地发光。解决方案：在衬底和III族氮化物化合物半导体的发光层之间提供其带隙能量小于发光层的光电子半导体层。光激发半导体层接收从发光层发射的光并发射比接收光更长波长的光。

5. 发明专利

JP2006286825A Photoelectric converter 审中-公开
标题翻译：光电转换器
公开(公告)号：JP2006286825A
公开(公告)日：2006-10-19
申请号：JP2005103127
申请日：2005-03-31
申请人： Toyoda Gosei Co Ltd , Toyota Central Res & Dev Lab Inc , Toyota Gakuen , 学校法人トヨタ学園 , 株式会社豊田中央研究所 , 豊田合成株式会社
发明人： OZAWA TAKAHIRO , OSAWA JUN , SENDA MASANOBU
IPC分类号： H01L31/10
摘要： PROBLEM TO BE SOLVED: To provide a photoelectric converter capable of selectively receiving necessary visible light without increasing the number of components. SOLUTION: The photoelectric converter 10 for converting a green optical signal into an electric signal includes a light receiving layer 52 of In 0.4 Ga 0.6 N, a pair of interdigital electrodes 72 and 74 with potential difference and in electric contact with the surface of the layer 52, and a first filter 32 of GaN and a second filter 34 of In 0.2 Ga 0.8 N provided toward an incident surface from the light receiving layer 52 and having a wider band gap than that of the layer 52. The filter layers 32 and 34 absorb visible light with a shorter wavelength than that of the visible light absorbed by the layer 52. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够选择性地接收必要的可见光而不增加部件数量的光电转换器。解决方案：用于将绿色光信号转换为电信号的光电转换器10包括：In 0.4 0.6 N的光接收层52，一对叉指具有电位差并且与层52的表面电接触的电极72和74，以及GaN的第一滤光器32和第二滤光器34， N朝向来自光接收层52的入射面提供，并且具有比层52更宽的带隙。滤光层32和34吸收的波长比由层52吸收的可见光的波长短的可见光。版权所有（C）2007，JPO＆INPIT

6. 发明专利

JP2005085955A Photoelectric converter 审中-公开
标题翻译：光电转换器
公开(公告)号：JP2005085955A
公开(公告)日：2005-03-31
申请号：JP2003315816
申请日：2003-09-08
申请人： Toyota Central Res & Dev Lab Inc , 株式会社豊田中央研究所
发明人： OZAWA TAKAHIRO , KACHI TORU , ITO HIROSHI
IPC分类号： H01L31/10
摘要： PROBLEM TO BE SOLVED: To solve the problem that a photoelectric converter for detecting only a current by an electron-hole pair generated by incident light has limited photoelectric converting efficiency and difficulty in realizing a high photoelectric converting efficiency.
SOLUTION: The photoelectric converter has a light receiving layer 24 and an electron supplying layer 22. The layer 24 absorbs the entering light and generates the electrocn-hole pair, and the layer 22 supplies the electron to the layer 24 on the basis of a change in electric potential of the layer 24 which generates the electron-hole pair.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决的问题为了解决由入射光产生的电子 - 空穴对仅检测电流的光电转换器的光电转换效率受到限制，光电转换效率难以实现的问题。解决方案：光电转换器具有光接收层24和电子供给层22.层24吸收入射光并产生电孔对，并且层22基于该层24提供电子到层24。产生电子 - 空穴对的层24的电位变化。版权所有（C）2005，JPO＆NCIPI

7. 发明专利

JP2004134787A Group iii nitride compound semiconductor light-emitting device 审中-公开
公开(公告)号：JP2004134787A
公开(公告)日：2004-04-30
申请号：JP2003326534
申请日：2003-09-18
申请人： Toyoda Gosei Co Ltd , Toyota Central Res & Dev Lab Inc , 株式会社豊田中央研究所 , 豊田合成株式会社
发明人： SHIBATA NAOKI , OZAWA TAKAHIRO
IPC分类号： H01L33/06 , H01L33/12 , H01L33/32 , H01L33/42 , H01S5/343 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide a group III nitride compound semiconductor light-emitting device capable of emitting light of short wavelength at a high output. SOLUTION: In a group III nitride compound semiconductor light-emitting device provided with a quantum well structure, having a well layer comprising AlGaInN having Al and In as essential constituent elements and a barrier layer comprising AlGaInN which has Al as the essential constituent element, the composition of Al of the barrier layer is made the same as or lower than the composition of Al of the well layer. COPYRIGHT: (C)2004,JPO

8. 发明专利

JP2007158129A Semiconductor element 有权
标题翻译：半导体元件
公开(公告)号：JP2007158129A
公开(公告)日：2007-06-21
申请号：JP2005352723
申请日：2005-12-06
申请人： Toyoda Gosei Co Ltd , Toyota Central Res & Dev Lab Inc , 株式会社豊田中央研究所 , 豊田合成株式会社
发明人： KAMIMURA TOSHIYA , MORIYAMA JITSUKI , HORIUCHI SHIGEMI , OZAWA TAKAHIRO
IPC分类号： H01L31/10 , H01L33/10 , H01L33/14 , H01L33/32 , H01L33/38 , H01L33/40
摘要： PROBLEM TO BE SOLVED: To laminate an oxide electrode with a metal electrode in which an oxide has insulative performance while it is a high-reflection metal. SOLUTION: An n-type layer 11 having a light-emitting region L and a p-type layer 12 are formed on a sapphire substrate 100. An ITO electrode 121-t, a connection 121-c made of Ni consisting of an SiN x dielectric layer 150 and its hole, and a high-reflection metal layer 121-r made of Al are formed. A Ti layer 122, an Ni layer 123, and an Au layer 124 are successively formed thereon. Subsequently, an n-type silicon substrate 200 is prepared, and conductive multilayer films are formed by vapor deposition in the order of TiN layers 221, 231, Ti layers 222, 232, Ni layers 223, 233 and Au layers 224, 234. Gold-tin solder (Au-20Sn) 51, 52 containing 20% tin are formed on these layers, thermal pressing is applied at 300°C, and two wafers are composited. After that, GaN on the surface of the n-type layer 11 is decomposed by laser irradiation from the sapphire substrate 100, and the sapphire substrate 100 is removed by lift-off. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了将氧化物电极与其中具有绝缘性能的金属电极层叠，同时是高反射金属。解决方案：在蓝宝石衬底100上形成具有发光区域L和p型层12的n型层11. ITO电极121-t，由Ni构成的连接121-c，由形成SiN x 介电层150及其孔，并且形成由Al制成的高反射金属层121-r。在其上依次形成Ti层122，Ni层123和Au层124。随后，制备n型硅衬底200，并且以TiN层221,231，Ti层222,232，Ni层223,233和Au层224,234的顺序通过气相沉积形成导电多层膜。金在这些层上形成含有20％锡的锡焊料（Au-20Sn）51,52，在300℃下进行热压，并且复合两个晶片。之后，通过激光照射从蓝宝石衬底100分解n型层11的表面上的GaN，通过剥离来去除蓝宝石衬底100。版权所有（C）2007，JPO＆INPIT

9. 发明专利

JP2005302804A Light emitting diode and its manufacturing method 审中-公开
标题翻译：发光二极管及其制造方法
公开(公告)号：JP2005302804A
公开(公告)日：2005-10-27
申请号：JP2004112796
申请日：2004-04-07
申请人： Toyoda Gosei Co Ltd , Toyota Central Res & Dev Lab Inc , 株式会社豊田中央研究所 , 豊田合成株式会社
发明人： ASAI MAKOTO , YAMAZAKI SHIRO , UBUKAWA MITSUHISA , OZAWA TAKAHIRO
IPC分类号： H01L33/20 , H01L33/32 , H01L33/34 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To highly secure external quantum efficiency and light derivation efficiency when manufacturing a light emitting diode with a relatively short light emission wavelength using a crystal growth substrate consisting of semiconductor bulk crystal. SOLUTION: The light emitting diode includes, on the backside of an about 150 μm semiconductor crystal substrate 102 comprising a natural GaN bulk crystal, a flat face 102a to be polished finished by dry etching and a tapered face 102b to be ground finished by dry etching. In the active layer 105 of an MQW structure of ultraviolet ray emission, there are laminated a well layer 51 consisting of an about 2 nm thick Al 0.005 In 0.045 Ga 0.95 N, and a barrier layer 52 consisting of an about 18 nm thick Al 0.12 Ga 0.88 N alternately by 5 layers in total, on an about 10 nm thick n-type cladding layer 104 (low carrier concentration layer) consisting of GaN. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：使用由半导体本体晶体构成的晶体生长衬底制造具有相对短的发光波长的发光二极管时，可以高度确保外部量子效率和光的衍生效率。解决方案：发光二极管在包括天然GaN体晶的约150μm半导体晶体衬底102的背面上包括通过干法蚀刻完成的待抛光的平坦面102a和待研磨的锥形面102b 通过干蚀刻。在MQW紫外线发射结构的有源层105中，层叠有由约2nm厚的Al 0.005 0.95 N，以及由大约18nm厚的Al 0.12 Ga 0.88 N组成的阻挡层52，总共5层，约10nm 由GaN构成的厚n型包覆层104（低载流子浓度层）。版权所有（C）2006，JPO＆NCIPI

10. 发明专利

JP2005044954A Method of forming electrode on semiconductor substrate 审中-公开
标题翻译：在半导体基板上形成电极的方法
公开(公告)号：JP2005044954A
公开(公告)日：2005-02-17
申请号：JP2003202240
申请日：2003-07-28
申请人： Toyoda Gosei Co Ltd , Toyota Central Res & Dev Lab Inc , 株式会社豊田中央研究所 , 豊田合成株式会社
发明人： ASAI MAKOTO , YAMAZAKI SHIRO , OZAWA TAKAHIRO
IPC分类号： H01L33/32 , H01L33/36 , H01S5/042 , H01S5/323 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To efficiently suppress the driving voltage of a semiconductor element, relating to a method of forming an electrode on the polished surface of a semiconductor substrate consisting of a group III conductive nitride compound element and has already been polished. SOLUTION: Before an electrode forming process for forming a negative electrode (n electrode c) on the polished surface of the semiconductor substrate (a) consisting of a group III conductive nitride compound semiconductor and has already been polished, the polished surface is dry-etched. This semiconductor substrate (a) has the function of an n-type contact layer in a light-emitting diode 10. By dry-etching the polished surface before the electrode forming process, a damaged layer having deteriorated crystallinity can be removed and good ohmic contact can be obtained. It is considered that the above effect can be obtained because the damaged layer has a high resistivity due to deterioration of crystallinity. Also, according to the above method, since the necessity of suppressing the size of a slurry, a frictional force and pressure in polishing work is not particularly required, the polishing time of a semiconductor substrate can be shortened. Accordingly, according to this method, the productivity of the semiconductor element can also be improved. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了有效地抑制半导体元件的驱动电压，涉及在由III族导电氮化物复合元件组成的半导体衬底的抛光表面上形成电极的方法，并且已经被抛光。解决方案：在由III族导电氮化物半导体组成的半导体衬底（a）的抛光表面上形成负极（n电极c）的电极形成工艺之前，已经被抛光，抛光表面是干法蚀刻。该半导体衬底（a）具有发光二极管10中的n型接触层的功能。通过在电极形成工艺之前对抛光表面进行干法蚀刻，可以去除具有劣化的结晶度的损伤层和良好的欧姆接触可以获得。认为可以获得上述效果，因为损坏层由于结晶度的劣化而具有高的电阻率。此外，根据上述方法，由于不需要特别需要抑制浆料的尺寸，磨削加工中的摩擦力和压力，所以可以缩短半导体基板的研磨时间。因此，根据该方法，也可以提高半导体元件的生产率。版权所有（C）2005，JPO＆NCIPI

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