专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2003332619A Semiconductor light emitting element 审中-公开
标题翻译：半导体发光元件
公开(公告)号：JP2003332619A
公开(公告)日：2003-11-21
申请号：JP2003164330
申请日：2003-06-09
申请人： Toyoda Gosei Co Ltd , Toyota Central Res & Dev Lab Inc , 株式会社豊田中央研究所 , 豊田合成株式会社
发明人： KOIDE NORIKATSU , KOIKE MASAYOSHI , UMEZAKI JUNICHI , WAKIGUCHI MITSUO , ASAMI SHINYA , ITO KENJI , KACHI TORU , TOMITA KAZUYOSHI , OZAWA TAKAHIRO
IPC分类号： H01L33/06 , H01L33/08 , H01L33/12 , H01L33/32 , H01L33/40 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To retrieve light from a substrate side by emitting light of arbitrary chromaticity (saturation, hue) by a single pixel. SOLUTION: A semiconductor light emitting element comprises a first light emitting layer 3 and a second light emitting layer 9 laminated on a substrate 1 to emit lights of different chromaticities so that the first layer 3 is formed in a multiple quantum well structure. Since a forbidden band width can be changed by changing a crystal ratio of the layer 3 to the layer 9, the peak wavelength of the emitting light can be changed by the crystal ratio, and wavelength intensity characteristics of combined light of the lights emitted from the layers 3 and 9 are set to desired characteristics. Accordingly, the light having the arbitrary chromaticity can be emitted from the single pixel. The element also comprises a buffer layer 6 provided between the layer 3 and the layer 9, and since the light emitted from the layer 3 to an electrode 14 side is reflected to the substrate 1 side by the layer 6, the retrieving efficiency of the light from the substrate 1 side can be enhanced. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：通过以单个像素发出任意色度（饱和度，色调）的光来从基板侧检索光。解决方案：半导体发光元件包括层叠在基板1上的第一发光层3和第二发光层9，以发射不同色度的光，使得第一层3形成为多量子阱结构。由于可以通过改变层3与层9的晶体比来改变禁带宽度，所以可以通过晶体比改变发光的峰值波长，并且可以改变发射的光的组合光的波长强度特性层3和9被设置为期望的特性。因此，可以从单个像素发射具有任意色度的光。该元件还包括设置在层3和层9之间的缓冲层6，并且由于从层3发射到电极14侧的光被层6反射到衬底1侧，所以光的检索效率从基板1侧可以得到增强。版权所有（C）2004，JPO

2. 发明专利

JP2003309287A Light-emitting element 有权
标题翻译：发光元件
公开(公告)号：JP2003309287A
公开(公告)日：2003-10-31
申请号：JP2003133807
申请日：2003-05-12
申请人： Isamu Akasaki , Hiroshi Amano , Japan Science & Technology Corp , Toyoda Gosei Co Ltd , 浩天野 , 科学技術振興事業団 , 豊田合成株式会社 , 勇赤崎
发明人： KOIDE NORIKATSU , SHIBATA NAOKI , YAMAZAKI SHIRO , UMEZAKI JUNICHI , SASA MICHINARI , KOIKE MASAYOSHI , AKASAKI ISAMU , AMANO HIROSHI
IPC分类号： H01L33/12 , H01L33/32 , H01L33/42 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To improve the light emission retrieving efficiency of a light-emitting element, in a gallium nitride semiconductor light emitting element. SOLUTION: The light-retrieving side of the gallium nitride semiconductor light-emitting element 300 is set as an upper part electrode side. Accordingly, an upper part electrode is formed of a transparent ITO film 33, and an Al electrode 7 is provided as a contact in part contact. Thus, a light output is not wasted, and the efficiency of the emission of light can be improved. COPYRIGHT: (C)2004,JPO
摘要翻译：解决的问题：为了提高氮化镓半导体发光元件中的发光元件的发光检索效率。解决方案：将氮化镓半导体发光元件300的光回收侧设定为上部电极侧。因此，上部电极由透明ITO膜33形成，并且Al电极7被设置为部分接触的触点。因此，不会浪费光输出，能够提高发光效率。版权所有（C）2004，JPO

3. 发明专利

JP2003303996A Light-emitting element and method for manufacturing the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：JP2003303996A
公开(公告)日：2003-10-24
申请号：JP2003133806
申请日：2003-05-12
申请人： Isamu Akasaki , Hiroshi Amano , Japan Science & Technology Corp , Toyoda Gosei Co Ltd , 浩天野 , 科学技術振興事業団 , 豊田合成株式会社 , 勇赤崎
发明人： KOIDE NORIKATSU , SHIBATA NAOKI , YAMAZAKI SHIRO , UMEZAKI JUNICHI , SASA MICHINARI , KOIKE MASAYOSHI , AKASAKI ISAMU , AMANO HIROSHI
IPC分类号： H01L33/10 , H01L33/30 , H01L33/42 , H01L33/44 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To improve the light emission extraction efficiency of a light-emitting element in a gallium nitride-based semiconductor light-emitting element. SOLUTION: This gallium nitride-based light-emitting element 100 is provided with a antireflection layer (or a reflecting layer for reflecting light) whose light-transmitting efficiency is made most satisfactory. Also, attenuation of lights radiated to the light radiation side, due to reflection can be suppressed, by an antireflection layer 10, (or lights radiated to the opposite side of the light-extracting side are radiated in a target direction in the reflecting layer). Thus, the lights of the light-emitting element can be more prevented from radiating in surplus directions, and the waste of output can be further prevented, and the light-emitting efficiency can be more improved than in the conventional manner. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提高氮化镓系半导体发光元件中的发光元件的发光提取效率。解决方案：该氮化镓系发光元件100具有光透射效率最令人满意的抗反射层（或反射光反射层）。此外，通过抗反射层10（或者在光反射层的相对侧照射的光在反射层中的目标方向上被照射）也可以抑制由于反射而辐射到光辐射侧的光的衰减，。因此，可以更多地防止发光元件的光在多个方向上辐射，并且可以进一步防止输出的浪费，并且可以比常规方式更好地提高发光效率。版权所有（C）2004，JPO

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式