会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 2. 发明授权
    • Piezoelectric resonator and piezoelectric resonator part
    • 压电谐振器和压电谐振器部分
    • US06404102B1
    • 2002-06-11
    • US09631699
    • 2000-08-03
    • Toshiyuki SuzukiNobuyuki MikiMasakazu HiroseMasayoshi Inoue
    • Toshiyuki SuzukiNobuyuki MikiMasakazu HiroseMasayoshi Inoue
    • H01L4108
    • H03H9/177H03H9/0207H03H9/02157H03H9/0504H03H9/1014
    • A piezoelectric substrate is constituted by a piezoelectric material of an effective Poisson's ratio being less than 1/3. The substrate has a pair of opposite faces and the opposite faces are provide with a pair of vibrating electrodes in correspondence. The opposite faces of the piezoelectric substrate are rectangular respectively. The sum of the lengths Lc of the one faces in the opposite faces 1a, 1b and the length Wc of the other side of the same is limited within range 2.22 mm≦≦2.24 mm or 2.34 mm≦≦2.48 mm, said one faces being vertical each other. The areas Sc of the opposite faces are 1.22 mm2≦Sc≦1.26 mm2 or 1.35 mm2≦Sc≦1.538 mm2. Accordingly, though using the piezoelectric material of the effective Poisson's ratio being less than 1/3, vibration in the thickness extensional fundamental waves can be steadily utilized.
    • 压电基板由有效泊松比的压电材料构成,小于1/3。 基板具有一对相对的面,相对的面相应地设有一对振动电极。 压电基板的相对面分别为矩形。 相对面1a,1b中的一个面的长度Lc和其另一面的长度Wc的总和被限制在2.22mm <= 2.24mm或2.34mm <= <= 2.48mm的范围内, 说一个人面对垂直。 相对面的面积Sc为1.22 mm2 <= Sc <= 1.26 mm2或1.35 mm2 <= Sc <= 1.538 mm2。 因此,尽管使用有效泊松比的压电材料小于1/3,但可以稳定地利用厚度延伸基波的振动。
    • 6. 发明授权
    • Method of manufacturing a photomask
    • 制造光掩模的方法
    • US08663875B2
    • 2014-03-04
    • US13201148
    • 2010-01-29
    • Yasushi OkuboToshiyuki SuzukiMasahiro Hashimoto
    • Yasushi OkuboToshiyuki SuzukiMasahiro Hashimoto
    • G03F1/48
    • G03F1/48G03F1/32G03F1/54
    • A thin film composed of a material containing a metal and silicon is formed on a transparent substrate, and a thin film pattern is formed by patterning the thin film. Then, the main surface and the side walls of the thin film pattern are previously modified so as to prevent the transfer characteristics of the thin film pattern from changing more than predetermined even in the case where exposure light with a wavelength of 200 nm or less is cumulatively applied onto the thin film pattern which has been formed. The main surface and the side walls are modified by, for instance, performing heat treatment to the main surface and the side walls at 450-900° C. in the atmosphere containing oxygen.
    • 在透明基板上形成由含有金属和硅的材料构成的薄膜,通过图案化薄膜形成薄膜图案。 然后,预先修改薄膜图案的主表面和侧壁,以便即使在波长为200nm以下的曝光光为200nm以下的情况下,也能够防止薄膜图案的转印特性变化超过规定 累积地施加到已经形成的薄膜图案上。 主表面和侧壁通过例如在含有氧的气氛中在450-900℃下对主表面和侧壁进行热处理而进行改性。
    • 7. 发明授权
    • Detection device for detecting impedance of sensor element in gas sensor and sensor unit equipped with detection device
    • 用于检测气体传感器中传感器元件阻抗的检测装置和配备检测装置的传感器单元
    • US08659305B2
    • 2014-02-25
    • US13108091
    • 2011-05-16
    • Toshiyuki Suzuki
    • Toshiyuki Suzuki
    • G01R27/04G01R27/00G01R27/08
    • G01N27/4065
    • In a sensor control circuit, an impedance signal output unit has a HPF, a P/H circuit, a LPF, etc., and detects an element impedance of a sensor element on the basis of an impedance response signal which is alternately changed in response to an alternating current signal supplied to the sensor element. The P/H circuit has an input comparator which inputs an impedance detection voltage Vz after the HPF, a rectifying element connected to the P/H circuit, and a hold capacitor which is charged by the output of the input comparator. The input comparator has a constant current circuit and a transistor. The constant current circuit limits an updating value of a hold voltage value Vph of the hold capacitor every alternating current period. The sensor control device detects the element impedance of the sensor element with high accuracy while preventing influence of noise.
    • 在传感器控制电路中,阻抗信号输出单元具有HPF,P / H电路,LPF等,并且基于响应中交替改变的阻抗响应信号来检测传感器元件的元件阻抗 提供给传感器元件的交流信号。 P / H电路具有输入比较器,其在HPF之后输入阻抗检测电压Vz,连接到P / H电路的整流元件和由输入比较器的输出充电的保持电容器。 输入比较器具有恒流电路和晶体管。 恒流电路每交流电流限制保持电容器的保持电压值Vph的更新值。 传感器控制装置以高精度检测传感器元件的元件阻抗,同时防止噪声的影响。
    • 10. 发明申请
    • METHOD OF MANUFACTURING TRANSFER MASK AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    • 制造转移掩模的方法和制造半导体器件的方法
    • US20110217635A1
    • 2011-09-08
    • US13122680
    • 2010-10-08
    • Masahiro HashimotoKazuya SakaiToshiyuki SuzukiKazunori Ono
    • Masahiro HashimotoKazuya SakaiToshiyuki SuzukiKazunori Ono
    • G03F1/00
    • G03F1/46G03F1/54G03F1/80G03F1/82
    • The present invention is a method of manufacturing a transfer mask with use of a mask blank in which a thin film for pattern formation and a chromium-based thin film made of a material containing chromium are stacked on a transparent substrate in this order. The thin film for pattern formation is made of material containing silicon and a transition metal other than chromium. The chromium-based thin film is made of a material containing chromium. Exposure light having a wavelength of 200 nm or less is applied to the transfer mask. In the manufacturing method, the transfer mask is produced by performing, in the following order, a process of forming a resist film having a transfer pattern on the chromium-based thin film, a process of forming a transfer pattern in the chromium-based thin film with use of a mask of the resist film having the transfer pattern, a process of forming a transfer pattern in the thin film for pattern formation with use of a mask of the chromium-based thin film having the transfer pattern, and a process of removing the chromium-based thin film by etching. The manufacturing method further includes a cleaning process of at least one of alkali solution cleaning, hot water cleaning, and ozone-containing water cleaning on the produced transfer mask until a width of the transfer pattern of the thin film for pattern formation is reduced by 4 nm or a space width of the thin film for pattern formation is increased by 4 nm.
    • 本发明是一种使用掩模坯料制造转印掩模的方法,其中用于图案形成的薄膜和由含铬材料制成的铬基薄膜依次层叠在透明基板上。 用于图案形成的薄膜由含有硅和除铬以外的过渡金属的材料制成。 铬基薄膜由含铬的材料制成。 将具有200nm以下波长的曝光光施加到转印掩模。 在制造方法中,通过以下顺序,通过在铬系薄膜上形成具有转印图案的抗蚀剂膜的工序来制造转印掩模,在铬系薄膜中形成转印图案的工序 使用具有转印图案的抗蚀剂膜的掩模的膜,使用具有转印图案的铬基薄膜的掩模在图案形成用薄膜中形成转印图案的工序,以及 通过蚀刻去除铬基薄膜。 该制造方法还包括在制造的转印掩模上进行碱溶液清洗,热水清洗和含臭氧水清洗中的至少一种的清洗处理,直到图案形成用薄膜的转印图案的宽度减少4 nm或用于图案形成的薄膜的空间宽度增加4nm。