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1. 发明授权

US08663875B2 Method of manufacturing a photomask 有权
标题翻译：制造光掩模的方法
公开(公告)号：US08663875B2
公开(公告)日：2014-03-04
申请号：US13201148
申请日：2010-01-29
申请人： Yasushi Okubo , Toshiyuki Suzuki , Masahiro Hashimoto
发明人： Yasushi Okubo , Toshiyuki Suzuki , Masahiro Hashimoto
IPC分类号： G03F1/48
CPC分类号： G03F1/48 , G03F1/32 , G03F1/54
摘要： A thin film composed of a material containing a metal and silicon is formed on a transparent substrate, and a thin film pattern is formed by patterning the thin film. Then, the main surface and the side walls of the thin film pattern are previously modified so as to prevent the transfer characteristics of the thin film pattern from changing more than predetermined even in the case where exposure light with a wavelength of 200 nm or less is cumulatively applied onto the thin film pattern which has been formed. The main surface and the side walls are modified by, for instance, performing heat treatment to the main surface and the side walls at 450-900° C. in the atmosphere containing oxygen.
摘要翻译：在透明基板上形成由含有金属和硅的材料构成的薄膜，通过图案化薄膜形成薄膜图案。然后，预先修改薄膜图案的主表面和侧壁，以便即使在波长为200nm以下的曝光光为200nm以下的情况下，也能够防止薄膜图案的转印特性变化超过规定累积地施加到已经形成的薄膜图案上。主表面和侧壁通过例如在含有氧的气氛中在450-900℃下对主表面和侧壁进行热处理而进行改性。

2. 发明授权

US08367276B2 Mask blank and method of manufacturing mask 有权
标题翻译：面膜空白和制作面膜的方法
公开(公告)号：US08367276B2
公开(公告)日：2013-02-05
申请号：US12209694
申请日：2008-09-12
申请人： Yasushi Okubo , Masahiro Hashimoto , Toshiyuki Suzuki , Takayuki Ohnishi , Hirohito Anze , Hitoshi Sunaoshi , Takashi Kamikubo
发明人： Yasushi Okubo , Masahiro Hashimoto , Toshiyuki Suzuki , Takayuki Ohnishi , Hirohito Anze , Hitoshi Sunaoshi , Takashi Kamikubo
IPC分类号： G03F1/00 , G03F7/00
CPC分类号： G03F1/80 , G03F1/54 , G03F1/78
摘要： A mask blank is formed on a transparent substrate with a light-shielding film of a material mainly containing chromium and is used for obtaining a photomask by forming the light-shielding film into a transfer pattern by lithography using an electron beam writing resist. The mask blank includes a mask layer formed on the light-shielding film for serving as an etching mask in etching that forms the light-shielding film into the transfer pattern. The mask layer is made of a material containing silicon. The mask blank further includes a chromium nitride-based film formed on the mask layer and containing at least chromium and nitrogen.
摘要翻译：在具有主要含有铬的材料的遮光膜的透明基板上形成掩模坯料，并且通过使用电子束写入抗蚀剂通过光刻将遮光膜形成为转印图案而用于获得光掩模。掩模坯料包括形成在遮光膜上的掩模层，用于在蚀刻中用作蚀刻掩模，其将遮光膜形成为转印图案。掩模层由含硅的材料制成。掩模坯料还包括形成在掩模层上并且至少含有铬和氮的氮化铬基膜。

3. 发明申请

US20090075185A1 MASK BLANK AND METHOD OF MANUFACTURING MASK 有权
标题翻译： MASK BLANK和制造掩模的方法
公开(公告)号：US20090075185A1
公开(公告)日：2009-03-19
申请号：US12209694
申请日：2008-09-12
申请人： Yasushi OKUBO , Masahiro Hashimoto , Toshiyuki Suzuki , Takayuki Ohnishi , Hirohito Anze , Hitoshi Sunaoshi , Takashi Kamikubo
发明人： Yasushi OKUBO , Masahiro Hashimoto , Toshiyuki Suzuki , Takayuki Ohnishi , Hirohito Anze , Hitoshi Sunaoshi , Takashi Kamikubo
IPC分类号： G03F1/00
CPC分类号： G03F1/80 , G03F1/54 , G03F1/78
摘要： A mask blank is formed on a transparent substrate with a light-shielding film of a material mainly containing chromium and is used for obtaining a photomask by forming the light-shielding film into a transfer pattern by lithography using an electron beam writing resist. The mask blank includes a mask layer formed on the light-shielding film for serving as an etching mask in etching that forms the light-shielding film into the transfer pattern. The mask layer is made of a material containing silicon. The mask blank further includes a chromium nitride-based film formed on the mask layer and containing at least chromium and nitrogen.
摘要翻译：在具有主要含有铬的材料的遮光膜的透明基板上形成掩模坯料，并且通过使用电子束写入抗蚀剂通过光刻将遮光膜形成为转印图案而用于获得光掩模。掩模坯料包括形成在遮光膜上的掩模层，用于在蚀刻中用作蚀刻掩模，其将遮光膜形成为转印图案。掩模层由含硅的材料制成。掩模坯料还包括形成在掩模层上并且至少含有铬和氮的氮化铬基膜。

4. 发明申请

US20120034552A1 METHOD OF MANUFACTURING A PHOTOMASK 有权
标题翻译：制作光电子的方法
公开(公告)号：US20120034552A1
公开(公告)日：2012-02-09
申请号：US13201148
申请日：2010-01-29
申请人： Yasushi Okubo , Toshiyuki Suzuki , Masahiro Hashimoto
发明人： Yasushi Okubo , Toshiyuki Suzuki , Masahiro Hashimoto
IPC分类号： H01L21/027 , B82Y40/00
CPC分类号： G03F1/48 , G03F1/32 , G03F1/54
摘要： A thin film composed of a material containing a metal and silicon is formed on a transparent substrate, and a thin film pattern is formed by patterning the thin film. Then, the main surface and the side walls of the thin film pattern are previously modified so as to prevent the transfer characteristics of the thin film pattern from changing more than predetermined even in the case where exposure light with a wavelength of 200 nm or less is cumulatively applied onto the thin film pattern which has been formed. The main surface and the side walls are modified by, for instance, performing heat treatment to the main surface and the side walls at 450-900° C. in the atmosphere containing oxygen.
摘要翻译：在透明基板上形成由含有金属和硅的材料构成的薄膜，通过图案化薄膜形成薄膜图案。然后，预先修改薄膜图案的主表面和侧壁，以便即使在波长为200nm以下的曝光光为200nm以下的情况下，也能够防止薄膜图案的转印特性变化超过规定累积地施加到已经形成的薄膜图案上。主表面和侧壁通过例如在含有氧的气氛中在450-900℃下对主表面和侧壁进行热处理而进行改性。

5. 发明授权

US08043771B2 Phase shift mask blank and method of manufacturing phase shift mask 有权
标题翻译：相移掩模空白和制造相移掩模的方法
公开(公告)号：US08043771B2
公开(公告)日：2011-10-25
申请号：US12416468
申请日：2009-04-01
申请人： Atsushi Kominato , Toshiyuki Suzuki , Yasushi Okubo
发明人： Atsushi Kominato , Toshiyuki Suzuki , Yasushi Okubo
IPC分类号： G03F1/00
CPC分类号： G03F1/32
摘要： Disclosed is a phase shift mask blank (11) that can prevent the occurrence of a loading effect. The phase shift mask blank (11) includes a phase shift film (5) containing silicon, a light-shielding film (2) made of a material resistant to etching of the phase shift film (5), and an etching mask film (3) made of an inorganic material resistant to etching of the light-shielding film (2), which are formed in this order on a substrate (1) transparent to exposure light. Assuming that the thickness of the phase shift film (5) is t1, the etching rate of the phase shift film (5) by dry etching with an etchant using the etching mask film (3) and the light-shielding film (2) as a mask is v1, the thickness of the etching mask film (3) is t2, and the etching rate of the etching mask film (3) by dry etching with the above etchant is v2, (t1/v1)≦(t2/v2) is satisfied.
摘要翻译：公开了能够防止发生负载效应的相移掩模坯料（11）。相移掩模空白（11）包括含有硅的相移膜（5），由耐相变膜（5）的蚀刻材料制成的遮光膜（2）和蚀刻掩模膜（3））由能够对透光的基板（1）上的遮光膜（2）的蚀刻的无机材料制成。假设相移膜（5）的厚度为t1，通过使用蚀刻掩模膜（3）和遮光膜（2）的蚀刻剂进行干蚀刻的相移膜（5）的蚀刻速率为掩模为v1，蚀刻掩模膜（3）的厚度为t2，用上述蚀刻剂通过干蚀刻蚀刻掩模膜（3）的蚀刻速率为v2，（t1 / v1）＆nlE;（t2 / v2）满足。

6. 发明授权

US07794901B2 Method of manufacturing mask blank and transfer mask 有权
标题翻译：制造掩模毛坯和转印掩模的方法
公开(公告)号：US07794901B2
公开(公告)日：2010-09-14
申请号：US12637258
申请日：2009-12-14
申请人： Atsushi Kominato , Toshiyuki Suzuki , Yasushi Okubo
发明人： Atsushi Kominato , Toshiyuki Suzuki , Yasushi Okubo
IPC分类号： G03F9/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , G03F1/32 , G03F1/78 , Y10S430/143
摘要： In a method of manufacturing a mask blank adapted to be formed with a resist pattern by electron beam writing and having a light-shielding film and an etching mask film of an inorganic-based material resistant to etching of the light-shielding film which are formed in this order on a transparent substrate, when forming the etching mask film, shielding is performed using a shielding plate so as to prevent the etching mask film from being formed at least at a side surface of the substrate.
摘要翻译：在适于通过电子束写入形成抗蚀剂图形的掩模板的制造方法中，具有遮光膜和耐蚀刻遮光膜的无机类材料的蚀刻掩模膜在透明基板上按顺序，在形成蚀刻掩模膜时，使用屏蔽板进行屏蔽，以防止蚀刻掩模膜至少在基板的侧表面上形成。

7. 发明授权

US07655364B2 Methods of manufacturing mask blank and transfer mask 有权
标题翻译：制造掩模毛坯和转印掩模的方法
公开(公告)号：US07655364B2
公开(公告)日：2010-02-02
申请号：US12264424
申请日：2008-11-04
申请人： Atsushi Kominato , Toshiyuki Suzuki , Yasushi Okubo
发明人： Atsushi Kominato , Toshiyuki Suzuki , Yasushi Okubo
IPC分类号： G03F9/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , G03F1/32 , G03F1/78 , Y10S430/143
摘要： In a method of manufacturing a mask blank adapted to be formed with a resist pattern by electron beam writing and having a light-shielding film and an etching mask film of an inorganic-based material resistant to etching of the light-shielding film which are formed in this order on a transparent substrate, when forming the etching mask film, shielding is performed using a shielding plate so as to prevent the etching mask film from being formed at least at a side surface of the substrate.
摘要翻译：在适于通过电子束写入形成抗蚀剂图形的掩模板的制造方法中，具有遮光膜和耐蚀刻遮光膜的无机类材料的蚀刻掩模膜在透明基板上按顺序，在形成蚀刻掩模膜时，使用屏蔽板进行屏蔽，以防止蚀刻掩模膜至少在基板的侧表面上形成。

8. 发明申请

US20090117474A1 METHODS OF MANUFACTURING MASK BLANK AND TRANSFER MASK 有权
标题翻译：制造掩蔽层和转移掩模的方法
公开(公告)号：US20090117474A1
公开(公告)日：2009-05-07
申请号：US12264424
申请日：2008-11-04
申请人： Atsushi Kominato , Toshiyuki Suzuki , Yasushi Okubo
发明人： Atsushi Kominato , Toshiyuki Suzuki , Yasushi Okubo
IPC分类号： G03F1/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , G03F1/32 , G03F1/78 , Y10S430/143
摘要： In a method of manufacturing a mask blank adapted to be formed with a resist pattern by electron beam writing and having a light-shielding film and an etching mask film of an inorganic-based material resistant to etching of the light-shielding film which are formed in this order on a transparent substrate, when forming the etching mask film, shielding is performed using a shielding plate so as to prevent the etching mask film from being formed at least at a side surface of the substrate.
摘要翻译：在适于通过电子束写入形成抗蚀剂图形的掩模板的制造方法中，具有遮光膜和耐蚀刻遮光膜的无机类材料的蚀刻掩模膜在透明基板上按顺序，在形成蚀刻掩模膜时，使用屏蔽板进行屏蔽，以防止蚀刻掩模膜至少在基板的侧表面上形成。

9. 发明申请

US20090253054A1 PHASE SHIFT MASK BLANK AND METHOD OF MANUFACTURING PHASE SHIFT MASK 有权
标题翻译：相移屏蔽层和制造相移片的方法
公开(公告)号：US20090253054A1
公开(公告)日：2009-10-08
申请号：US12416468
申请日：2009-04-01
申请人： Atsushi KOMINATO , Toshiyuki Suzuki , Yasushi Okubo
发明人： Atsushi KOMINATO , Toshiyuki Suzuki , Yasushi Okubo
IPC分类号： G03F1/00
CPC分类号： G03F1/32
摘要： Disclosed is a phase shift mask blank (11) that can prevent the occurrence of a loading effect. The phase shift mask blank (11) includes a phase shift film (5) containing silicon, a light-shielding film (2) made of a material resistant to etching of the phase shift film (5), and an etching mask film (3) made of an inorganic material resistant to etching of the light-shielding film (2), which are formed in this order on a substrate (1) transparent to exposure light. Assuming that the thickness of the phase shift film (5) is t1, the etching rate of the phase shift film (5) by dry etching with an etchant using the etching mask film (3) and the light-shielding film (2) as a mask is v1, the thickness of the etching mask film (3) is t2, and the etching rate of the etching mask film (3) by dry etching with the above etchant is v2, (t1/v1)≦(t2/v2) is satisfied.
摘要翻译：公开了能够防止发生负载效应的相移掩模坯料（11）。相移掩模空白（11）包括含有硅的相移膜（5），由耐相变膜（5）的蚀刻材料制成的遮光膜（2）和蚀刻掩模膜（3））由能够对透光的基板（1）上的遮光膜（2）的蚀刻的无机材料制成。假设相移膜（5）的厚度为t1，通过使用蚀刻掩模膜（3）和遮光膜（2）的蚀刻剂进行干蚀刻的相移膜（5）的蚀刻速率为掩模为v1，蚀刻掩模膜（3）的厚度为t2，用上述蚀刻剂通过干蚀刻蚀刻掩模膜（3）的蚀刻速率为v2，（t1 / v1）<=（t2 / v2）满足。

10. 发明授权

US08802334B2 Surface treatment method for a mask blank, method of manufacturing a mask blank, and method of manufacturing a mask 有权
标题翻译：面罩坯料的表面处理方法，掩模坯料的制造方法以及掩模的制造方法
公开(公告)号：US08802334B2
公开(公告)日：2014-08-12
申请号：US13440539
申请日：2012-04-05
申请人： Takeyuki Yamada , Toshiyuki Suzuki , Masahiro Hashimoto , Yasunori Yokoya
发明人： Takeyuki Yamada , Toshiyuki Suzuki , Masahiro Hashimoto , Yasunori Yokoya
IPC分类号： G03F1/00
CPC分类号： G03F1/68 , G03F1/80
摘要： Provided is a mask blank surface treatment method for surface-treating, using a treatment liquid, a surface of a thin film, to be formed into a transfer pattern, of a mask blank having the thin film on a substrate. The thin film is made of a material that can be etched by ion-based dry etching. The concentration of an etching inhibitor contained in the treatment liquid is 0.3 ppb or less.
摘要翻译：提供了一种掩模坯料表面处理方法，用于将具有薄膜的掩模坯料在基板上进行表面处理，使用处理液，形成转印图案的薄膜表面。该薄膜由可以通过基于离子的干蚀刻蚀刻的材料制成。包含在处理液中的蚀刻抑制剂的浓度为0.3ppb以下。

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