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    • 4. 发明授权
    • Aqueous zirconia sol and method of preparing same
    • 氧化锆水溶胶及其制备方法
    • US5643497A
    • 1997-07-01
    • US460593
    • 1995-06-02
    • Takao KagaYutaka KimuraFumio SaitoHiroaki Tanaka
    • Takao KagaYutaka KimuraFumio SaitoHiroaki Tanaka
    • B01J13/00
    • B01J13/00
    • A stable aqueous sol of colloidal zirconia having lowered surface activity and useful for polishing semiconductors and the like, is prepared by a process comprising calcining a colloidal zirconia having a specific surface area of 10 to 400 m.sup.2 /g, a particle size of 20 to 500 nm and a dehydratable water content of 4 to 15% by weight at 400.degree. to 1,000.degree. C. to form a calcined zirconia having a dehydratable water content of 0.1 to 2% by weight, and pulverizing the calcined zirconia in the presence of a water-soluble acid or alkali in water, to form the stable sol of colloidal zirconia having a specific surface area of 5 to 200 m.sup.2 /g, a particle size of 20 to 1,500 nm and a dehydratable water content of 0.1 to 3% by weight. The stable sol of colloidal zirconia has a ZrO.sub.2 concentration of 5 to 80% by weight.
    • 通过包括煅烧比表面积为10-400m 2 / g,粒度为20-500的胶体氧化锆的方法制备具有降低的表面活性并可用于抛光半导体等的胶态氧化锆稳定的水性溶胶 并且在400-1000℃下可脱水的含水量为4至15重量%,以形成可脱水水含量为0.1至2重量%的煅烧氧化锆,并在煅烧的水的存在下粉碎煅烧氧化锆 在水中的可溶性酸或碱,形成比表面积为5〜200m 2 / g,粒径为20〜1500nm,脱水水分为0.1〜3重量%的胶态氧化锆的稳定溶胶。 胶体氧化锆的稳定溶胶的ZrO2浓度为5〜80重量%。