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1. 发明授权

US07015308B1 Hedgehog protein 失效
公开(公告)号：US07015308B1
公开(公告)日：2006-03-21
申请号：US09063778
申请日：1998-04-22
申请人： Toshio Ariyasu , Shuji Nakamura , Kunzo Orita
发明人： Toshio Ariyasu , Shuji Nakamura , Kunzo Orita
IPC分类号： C07K14/475
CPC分类号： C07K14/47 , A61K38/00 , C07K16/18
摘要： Disclosed are a novel hedgehog protein, i.e., a Desert hedgehog protein of human origin including mature and precursor forms, a DNA encoding the protein, a monoclonal antibody recognizing the protein, a process for producing the protein, and a method for detecting the protein. The hedgehog protein is useful in establishment of hybridomas which produce antibodies recognizing the protein, and the monoclonal antibody is useful in detection and purification of the protein. The hedgehog protein, DNA, and monoclonal antibody of this invention have efficacy in elucidation of hereditary morphological abnormalities in humans to establish their treatments and diagnoses.

2. 发明授权

US07098026B1 Human desert hedgehog protein 失效
标题翻译：人类沙漠刺猬蛋白
公开(公告)号：US07098026B1
公开(公告)日：2006-08-29
申请号：US09617545
申请日：2000-07-14
申请人： Toshio Ariyasu , Shuji Nakamura , Kunzo Orita
发明人： Toshio Ariyasu , Shuji Nakamura , Kunzo Orita
IPC分类号： C12N5/00
CPC分类号： C07K14/47 , A61K38/00 , C07K16/18
摘要： Disclosed are a novel hedgehog protein, i.e., a Desert hedgehog protein of human origin including mature and precursor forms, a DNA encoding the protein, a monoclonal antibody recognizing the protein, a process for producing the protein, and a method for detecting the protein. The hedgehog protein is useful in establishment of hybridomas which produce antibodies recognizing the protein, and the monoclonal antibody is useful in detection and purification of the protein. The hedgehog protein, DNA, and monoclonal antibody of this invention have efficacy in elucidation of hereditary morphological abnormalities in humans to establish their treatments and diagnoses.
摘要翻译：公开了一种新颖的刺猬蛋白，即人源的沙漠刺猬蛋白，包括成熟和前体形式，编码蛋白质的DNA，识别蛋白质的单克隆抗体，产生蛋白质的方法和检测蛋白质的方法。刺猬蛋白可用于产生识别蛋白质的抗体的杂交瘤的建立，并且单克隆抗体可用于蛋白质的检测和纯化。本发明的刺猬蛋白，DNA和单克隆抗体具有阐明人类遗传性形态学异常以确定其治疗和诊断的功效。

3. 发明申请

US20090297490A1 NOVEL HUMAN T-CELL POPULATION 有权
标题翻译：新人类T细胞人口
公开(公告)号：US20090297490A1
公开(公告)日：2009-12-03
申请号：US12282977
申请日：2007-03-15
申请人： Shuji Nakamura , Ryuichi Motoda , Masayoshi Kibata , Kunzo Orita , Fumiyuki Yamasaki
发明人： Shuji Nakamura , Ryuichi Motoda , Masayoshi Kibata , Kunzo Orita , Fumiyuki Yamasaki
IPC分类号： A61K35/12 , C12N5/08
CPC分类号： C12N5/0636 , A61K35/17 , A61K2035/122 , A61K2300/00
摘要： The present invention has objects to provide a novel human T-cell population having both cytotoxic and immunosuppressive activities, and to a method for preparing the same. The above objects are attained by providing a human T-cell population which is obtainable by coculturing mononuclear cells, collected from human blood, with stroma cells and which has the following features: (1) being positive for CD3, CD25, CD28 and T-cell antigen receptor αβ; (2) essentially consisting of three groups of a CD4 positive and CD8 positive (CD4+CD8−) T-cell group, a CD4 positive and CD8 dimly positive (CD4+CD8dim) T-cell group, and a CD4 negative and CD8 positive (CD4−CD8+) T-cell group; (3) exerting a cytotoxic activity against the cocultured stroma cells; and (4) exerting an immunosuppressive activity against activated T cells.
摘要翻译：本发明的目的是提供具有细胞毒性和免疫抑制活性两者的新型人T细胞群及其制备方法。上述目的是通过提供通过共培养从人血液收集的单核细胞与基质细胞获得的人类T细胞群而获得的，并且具有以下特征：（1）对于CD3，CD25，CD28和T- 细胞抗原受体（2）基本上由CD4阳性和CD8阳性（CD4 + CD8-）T细胞组，CD4阳性和CD8阳性（CD4 + CD8dim）T细胞组和CD4阴性和CD8阳性三组组成（CD4-CD8 +）T细胞组; （3）对共培养的基质细胞发挥细胞毒活性; 和（4）对活化的T细胞施加免疫抑制活性。

4. 发明授权

US08883495B2 Human T-cell population 有权
标题翻译：人类T细胞群体
公开(公告)号：US08883495B2
公开(公告)日：2014-11-11
申请号：US12282977
申请日：2007-03-15
申请人： Shuji Nakamura , Ryuichi Motoda , Masayoshi Kibata , Kunzo Orita , Fumiyuki Yamasaki
发明人： Shuji Nakamura , Ryuichi Motoda , Masayoshi Kibata , Kunzo Orita , Fumiyuki Yamasaki
IPC分类号： C12N5/00 , A61K35/14 , C12N5/0783 , A61K35/12
CPC分类号： C12N5/0636 , A61K35/17 , A61K2035/122 , A61K2300/00
摘要： The present invention has objects to provide a novel human T-cell population having both cytotoxic and immunosuppressive activities, and to a method for preparing the same. The above objects are attained by providing a human T-cell population which is obtainable by coculturing mononuclear cells, collected from human blood, with stroma cells and which has the following features: (1) being positive for CD3, CD25, CD28 and T-cell antigen receptor αβ; (2) essentially consisting of three groups of a CD4 positive and CD8 positive (CD4+CD8+) T-cell group, a CD4 positive and CD8 dimly positive (CD4+CD8dim) T-cell group, and a CD4 negative and CD8 positive (CD4−CD8+) T-cell group; (3) exerting a cytotoxic activity against the cocultured stroma cells; and (4) exerting an immunosuppressive activity against activated T cells.
摘要翻译：本发明的目的是提供具有细胞毒性和免疫抑制活性两者的新型人T细胞群及其制备方法。上述目的是通过提供通过共培养从人血液收集的单核细胞与基质细胞获得的人类T细胞群而获得的，并且具有以下特征：（1）对于CD3，CD25，CD28和T- 细胞抗原受体α＆bgr; （2）基本上由CD4阳性和CD8阳性（CD4 + CD8 +）T细胞组，CD4阳性和CD8阳性（CD4 + CD8dim）T细胞组和CD4阴性和CD8阳性（CD4 + CD4-CD8 +）T细胞组; （3）对共培养的基质细胞发挥细胞毒活性; 和（4）对活化的T细胞施加免疫抑制活性。

5. 发明授权

US09130119B2 Non-polar and semi-polar light emitting devices 有权
标题翻译：非极性和半极性发光器件
公开(公告)号：US09130119B2
公开(公告)日：2015-09-08
申请号：US12001227
申请日：2007-12-11
申请人： Steven P. DenBaars , Mathew C. Schmidt , Kwang Choong Kim , James S. Speck , Shuji Nakamura
发明人： Steven P. DenBaars , Mathew C. Schmidt , Kwang Choong Kim , James S. Speck , Shuji Nakamura
IPC分类号： H01L33/00 , H01L33/32 , B82Y20/00 , H01L33/06 , H01L33/16 , H01L33/22 , H01S5/22 , H01S5/223 , H01S5/34 , H01S5/343
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01L33/16 , H01L33/22 , H01S5/2201 , H01S5/2231 , H01S5/3404 , H01S5/34333
摘要： An (Al, Ga, In)N light emitting device, such as a light emitting diode (LED), in which high light generation efficiency is realized by fabricating the device on non-polar or semi-polar III-Nitride crystal geometries. Because non-polar and semi-polar emitting devices have significantly lower piezoelectric effects than c-plane emitting devices, higher efficiency emitting devices at higher current densities can be realized.
摘要翻译：一种（Al，Ga，In）N发光器件，例如发光二极管（LED），其中通过以非极性或半极性III氮化物晶体几何形状制造器件来实现高发光效率。因为非极性和半极性发射器件具有比c面发射器件显着更低的压电效应，所以可以实现在更高电流密度下的更高效率的发射器件。

6. 发明授权

US08956896B2 Metalorganic chemical vapor deposition (MOCVD) growth of high performance non-polar III-nitride optical devices 有权
标题翻译：金属有机化学气相沉积（MOCVD）生长的高性能非极性III族氮化物光学器件
公开(公告)号：US08956896B2
公开(公告)日：2015-02-17
申请号：US13440087
申请日：2012-04-05
申请人： Mathew C. Schmidt , Kwang Choong Kim , Hitoshi Sato , Steven P. DenBaars , James S. Speck , Shuji Nakamura
发明人： Mathew C. Schmidt , Kwang Choong Kim , Hitoshi Sato , Steven P. DenBaars , James S. Speck , Shuji Nakamura
IPC分类号： H01L21/36 , H01L33/00 , H01L21/00 , B82Y20/00 , H01L21/02 , H01S5/343
CPC分类号： H01L33/0075 , B82Y20/00 , H01L21/0237 , H01L21/02389 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01S5/34333 , H01S2304/04
摘要： A method of device growth and p-contact processing that produces improved performance for non-polar III-nitride light emitting diodes and laser diodes. Key components using a low defect density substrate or template, thick quantum wells, a low temperature p-type III-nitride growth technique, and a transparent conducting oxide for the electrodes.
摘要翻译：一种器件生长和p接触处理的方法，其产生非极性III族氮化物发光二极管和激光二极管的改善的性能。使用低缺陷密度衬底或模板的关键组件，厚量子阱，低温p型III族氮化物生长技术和用于电极的透明导电氧化物。

7. 发明授权

US08860051B2 Textured phosphor conversion layer light emitting diode 有权
标题翻译：纹理磷光体转换层发光二极管
公开(公告)号：US08860051B2
公开(公告)日：2014-10-14
申请号：US11940885
申请日：2007-11-15
申请人： Natalie N. Fellows , Steven P. DenBaars , Shuji Nakamura
发明人： Natalie N. Fellows , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L33/22 , H01L33/58 , H01L33/50 , H01L33/44
CPC分类号： H01L33/22 , H01L33/0075 , H01L33/06 , H01L33/145 , H01L33/32 , H01L33/44 , H01L33/502 , H01L33/505 , H01L33/507 , H01L33/508 , H01L33/58 , H01L33/60 , H01L33/62 , H01L2224/48091 , H01L2224/49107 , H01L2224/73265 , H01L2924/181 , H01L2933/0041 , H01L2933/0058 , H01L2933/0066 , H01L2933/0091 , H01L2924/00014 , H01L2924/00012
摘要： This invention is related to LED Light Extraction for optoelectronic applications. More particularly the invention relates to (Al, Ga, In)N combined with optimized optics and phosphor layer for highly efficient (Al, Ga, In)N based light emitting diodes applications, and its fabrication method. A further extension is the general combination of a shaped high refractive index light extraction material combined with a shaped optical element.
摘要翻译：本发明涉及用于光电应用的LED灯提取。更具体地，本发明涉及与用于高效（Al，Ga，In）N的发光二极管应用的优化的光学器件和磷光体层组合的（Al，Ga，In）及其制造方法。进一步的扩展是与成形光学元件组合的成形高折射率光提取材料的一般组合。

8. 发明授权

US08835200B2 High light extraction efficiency nitride based light emitting diode by surface roughening 有权
标题翻译：高光提取效率氮化物基发光二极管通过表面粗糙化
公开(公告)号：US08835200B2
公开(公告)日：2014-09-16
申请号：US13349342
申请日：2012-01-12
申请人： Hong Zhong , Anurag Tyagi , Kenneth J. Vampola , James S. Speck , Steven P. DenBaars , Shuji Nakamura
发明人： Hong Zhong , Anurag Tyagi , Kenneth J. Vampola , James S. Speck , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L33/32 , H01L21/02
CPC分类号： H01L33/22 , H01L21/02433 , H01L21/02458 , H01L33/0075 , H01L33/10 , H01L33/18 , H01L33/20 , H01L33/32 , H01L2933/0083
摘要： A III-nitride light emitting diode (LED) and method of fabricating the same, wherein at least one surface of a semipolar or nonpolar plane of a III-nitride layer of the LED is textured, thereby forming a textured surface in order to increase light extraction. The texturing may be performed by plasma assisted chemical etching, photolithography followed by etching, or nano-imprinting followed by etching.
摘要翻译： III族氮化物发光二极管（LED）及其制造方法，其中LED的III族氮化物层的半极性或非极性面的至少一个表面被纹理化，从而形成纹理表面以增加光萃取。纹理可以通过等离子体辅助化学蚀刻，光刻，然后进行蚀刻或纳米压印，然后蚀刻来进行。

9. 发明申请

US20140252396A1 HIGHLY EFFICIENT GALLIUM NITRIDE BASED LIGHT EMITTING DIODES VIA SURFACE ROUGHENING 审中-公开
标题翻译：通过表面粗化，高效率的基于氮化镓的发光二极管
公开(公告)号：US20140252396A1
公开(公告)日：2014-09-11
申请号：US14281535
申请日：2014-05-19
申请人： Tetsuo Fujii , Yan Gao , Evelyn L. Hu , Shuji Nakamura
发明人： Tetsuo Fujii , Yan Gao , Evelyn L. Hu , Shuji Nakamura
IPC分类号： H01L33/22 , H01L33/60 , H01L33/32
CPC分类号： H01L33/22 , H01L33/00 , H01L33/007 , H01L33/0079 , H01L33/06 , H01L33/32 , H01L33/50 , H01L33/54 , H01L33/60 , H01L2224/16225
摘要： A gallium nitride (GaN) based light emitting diode (LED), wherein light is extracted through a nitrogen face (N-face) of the LED and a surface of the N-face is roughened into one or more hexagonal shaped cones. The roughened surface reduces light reflections occurring repeatedly inside the LED, and thus extracts more light out of the LED. The surface of the N-face is roughened by an anisotropic etching, which may comprise a dry etching or a photo-enhanced chemical (PEC) etching.
摘要翻译：一种基于氮化镓（GaN）的发光二极管（LED），其中通过LED的氮面（N面）提取光，并且将N面的表面粗糙化成一个或多个六边形锥体。粗糙表面减少LED内部重复发生的光反射，从而从LED中提取更多的光。通过各向异性蚀刻使N面的表面变粗糙，其可以包括干蚀刻或光增强化学（PEC）蚀刻。

10. 发明授权

US08772758B2 Suppression of inclined defect formation and increase in critical thickness by silicon doping on non-c-plane (Al,Ga,In)N 有权
标题翻译：通过硅掺杂在非c面（Al，Ga，In）N上抑制倾斜缺陷形成和临界厚度增加
公开(公告)号：US08772758B2
公开(公告)日：2014-07-08
申请号：US13470598
申请日：2012-05-14
申请人： Matthew T. Hardy , Po Shan Hsu , Steven P. DenBaars , James S. Speck , Shuji Nakamura
发明人： Matthew T. Hardy , Po Shan Hsu , Steven P. DenBaars , James S. Speck , Shuji Nakamura
IPC分类号： H01L29/06
CPC分类号： H01L21/0254 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/02513
摘要： A method for fabricating a III-nitride based semiconductor device, including (a) growing one or more buffer layers on or above a semi-polar or non-polar GaN substrate, wherein the buffer layers are semi-polar or non-polar III-nitride buffer layers; and (b) doping the buffer layers so that a number of crystal defects in III-nitride device layers formed on or above the doped buffer layers is not higher than a number of crystal defects in III-nitride device layers formed on or above one or more undoped buffer layers. The doping can reduce or prevent formation of misfit dislocation lines and additional threading dislocations. The thickness and/or composition of the buffer layers can be such that the buffer layers have a thickness near or greater than their critical thickness for relaxation. In addition, one or more (AlInGaN) or III-nitride device layers can be formed on or above the buffer layers.
摘要翻译：一种用于制造III族氮化物的半导体器件的方法，包括（a）在半极性或非极性GaN衬底上或之上生长一个或多个缓冲层，其中缓冲层是半极性或非极性III- 氮化物缓冲层; 并且（b）掺杂缓冲层，使得形成在掺杂缓冲层上或上方的III族氮化物器件层中的多个晶体缺陷不高于形成在一个或多个第一或第二晶体管上形成的III族氮化物器件层中的多个晶体缺陷更多未掺杂的缓冲层。掺杂可以减少或防止错配位错线的形成和额外的穿线位错。缓冲层的厚度和/或组成可以使得缓冲层的厚度接近或大于其缓解的临界厚度。此外，可以在缓冲层上或上方形成一个或多个（AlInGaN）或III族氮化物器件层。

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