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    • 5. 发明申请
    • METHOD FOR MANUFACTURING THIN FILM TRANSISTOR, ELECTRO-OPTICAL DEVICE, AND ELECTRONIC APPARATUS
    • 制造薄膜晶体管,电光器件和电子设备的方法
    • US20060258068A1
    • 2006-11-16
    • US11381852
    • 2006-05-05
    • Katsuyuki MORIYAToshimitsu HIRAI
    • Katsuyuki MORIYAToshimitsu HIRAI
    • H01L21/84H01L21/00
    • H01L29/4908H01L27/1292H01L29/458
    • A method for manufacturing a thin film transistor in which a gate electrode, a semiconductor layer, and a source electrode and a drain electrode both of which are coupled to the semiconductor layer, are fabricated on a substrate, the method includes: forming a precursor of a first bank corresponding to a region to form the gate electrode on the substrate with one of a polysilazane liquid, a polysilane liquid, and a polysiloxane liquid; forming a precursor of a second bank corresponding to a region to form the source electrode and the drain electrode on a predetermined position of the precursor of the first bank with one of a polysilazane liquid, a polysilane liquid, and a polysiloxane liquid by using a droplet discharge method; firing the precursor of the first bank and the precursor of the second bank together so as to together form the first bank and the second bank both of which are made of an inorganic layer having polysiloxane as a skeleton; providing a functional liquid containing a conductive material to a region partitioned by one of the precursor of the first bank and the first bank formed from the precursor by using a droplet discharge method so as to form the gate electrode; forming a semiconductor layer on a part located immediately above the gate electrode in a region partitioned by the second bank with an insulation film between the semiconductor layer and the part; and providing a functional liquid containing a conductive material to a region partitioned by the second bank by using a droplet discharge method so as to form the source electrode and the drain electrode both of which are coupled to the semiconductor layer.
    • 一种薄膜晶体管的制造方法,其中在基板上制造栅电极,半导体层以及与半导体层耦合的源电极和漏电极的薄膜晶体管,该方法包括: 对应于在聚硅氮烷液体,聚硅烷液体和聚硅氧烷液体之一上形成基板上的栅电极的区域的第一堤岸; 形成对应于区域的第二组的前体,以通过使用液滴形成源极电极和漏极,在第一组的前体的预定位置上具有聚硅氮烷液体,聚硅烷液体和聚硅氧烷液体之一 放电方式 将第一组的前体和第二组的前体一起烧制,以一起形成第一组和第二组,它们都由具有聚硅氧烷作为骨架的无机层制成; 通过使用液滴喷射方法将由导电材料制成的功能性液体提供到由第一组的前体之一和由前体形成的第一组分隔开的区域中以形成栅电极; 在位于所述半导体层与所述半导体层之间的绝缘膜的所述第二堤岸分隔的区域中的位于所述栅电极正上方的部分上形成半导体层; 以及通过使用液滴喷射法将包含导电材料的功能性液体提供给由第二组划分的区域,以便形成源电极和漏电极,二者都与半导体层耦合。