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    • 9. 发明授权
    • Method for manufacturing thin film transistor, electro-optical device, and electronic apparatus
    • 薄膜晶体管,电光器件和电子设备的制造方法
    • US07556991B2
    • 2009-07-07
    • US11381852
    • 2006-05-05
    • Katsuyuki MoriyaToshimitsu Hirai
    • Katsuyuki MoriyaToshimitsu Hirai
    • H01L21/00
    • H01L29/4908H01L27/1292H01L29/458
    • A method for manufacturing a thin film transistor which includes forming precursors of a first and second bank corresponding to a region to form gate, source, and drain electrodes on the substrate with one of a polysilazane liquid, a polysilane liquid, and a polysiloxane liquid by using a droplet discharge method; firing the precursor of the first and second banks to form the first and banks an inorganic layer having polysiloxane as a skeleton; providing a functional liquid to a region partitioned by the first bank to form the gate electrode; forming a semiconductor layer immediately above the gate electrode in a region partitioned by the second bank with an insulation film between; and providing a functional liquid to a region partitioned by the second bank to form the source electrode and the drain electrode, which are coupled to the semiconductor layer.
    • 一种制造薄膜晶体管的方法,其包括形成对应于区域的第一和第二组的前体,以通过聚硅氮烷液体,聚硅烷液体和聚硅氧烷液体中的一种在基板上形成栅极,源极和漏极,由 使用液滴喷射法; 烧制第一和第二组的前体以形成第一和第二组,并形成具有聚硅氧烷作为骨架的无机层; 向由所述第一组隔开的区域提供功能液体以形成所述栅电极; 在由所述第二堤隔开的区域中,在所述栅电极的正上方形成半导体层,所述半导体层之间具有绝缘膜; 以及将功能液体提供给由第二组隔开的区域,以形成耦合到半导体层的源电极和漏电极。