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1. 发明申请

US20110201902A1 HEALTH CONDITION DETERMINING DEVICE 审中-公开
标题翻译：健康状况测定装置
公开(公告)号：US20110201902A1
公开(公告)日：2011-08-18
申请号：US13091973
申请日：2011-04-21
申请人： Toshikazu SHIGA , Yoshitake OSHIMA , Masakazu TSUTSUMI , Hiroshi NAKAJIMA , Naoki TSUCHIYA , Mitsuhiro YONEDA
发明人： Toshikazu SHIGA , Yoshitake OSHIMA , Masakazu TSUTSUMI , Hiroshi NAKAJIMA , Naoki TSUCHIYA , Mitsuhiro YONEDA
IPC分类号： A61B5/00
CPC分类号： G16H50/20 , G16H50/30 , G16H50/50
摘要： A health condition determining device accumulates data measured or input by an evaluation subject for each index of a plurality of items including a lifestyle index, which is an index related to body activity or lifestyle habit, and a biomarker, which is an index related to physiological state of the body. The health condition determining device then selects one or a plurality of biomarkers that lowers the evaluation of the health condition of the evaluation subject as a problematic index, extracts one or a plurality of lifestyle indices having the highest correlation with the problematic index as an improvable factor by comparing accumulated past data of the lifestyle index and the biomarker, and displays the improvable factor along with the evaluation of the health condition of the evaluation subject.
摘要翻译：健康状况判定装置积累由评价对象测定或输入的多个项目的指标的数据，所述多个项目包括作为与身体活动或生活习惯有关的指标的生活方式指数，以及与生理学相关的指标的生物标志物身体的状态然后，健康状况判定装置选择将评价对象的健康状况的评价降低为有问题的指标的一个或多个生物标志物，提取与有问题的指标具有最高相关性的一个或多个生活方式指标作为改善因素通过比较生活指数的累积过去数据和生物标志物，并显示出可评估因子以及评估对象的健康状况的评估。

2. 发明申请

US20130123959A1 EXERCISE DETECTION APPARATUS AND CONTROL METHOD FOR EXERCISE DETECTION APPARATUS 有权
标题翻译：运动检测装置的运动检测装置和控制方法
公开(公告)号：US20130123959A1
公开(公告)日：2013-05-16
申请号：US13711273
申请日：2012-12-11
申请人： Eriko KAN , Hideya MARUKAWA , Naoki TSUCHIYA , Hiroshi NAKAJIMA , Yoshitake OSHIMA
发明人： Eriko KAN , Hideya MARUKAWA , Naoki TSUCHIYA , Hiroshi NAKAJIMA , Yoshitake OSHIMA
IPC分类号： G06F17/40
CPC分类号： G06F17/40 , A61B5/02042 , A61B5/1118 , A61B5/221 , A61B5/6823 , A61B5/6831 , A61B2560/0257 , A61B2562/0219 , G01C22/006
摘要： An exercise detection apparatus determines body movements based on data detected by a detection unit, judges movement states for each body movement based on data detected by the detection unit, corrects the movement states based on a predetermined rule, calculates an exercise state of a user based on a result of the judgment, and stores the calculated exercise state in a storage unit. Accordingly, it is possible to provide an exercise detection apparatus capable of reducing erroneous judgments of the exercise states of the user.
摘要翻译：运动检测装置根据检测部检测出的数据来判定身体动作，根据检测部所检测到的数据判定每个身体运动的移动状态，根据规定的规则校正运动状态，计算用户的运动状态根据判断结果，将计算出的运动状态存储在存储部中。因此，能够提供能够减少用户的锻炼状态的错误判断的运动检测装置。

3. 发明申请

US20080222862A1 METHOD FOR MANUFACTURING SOLID ELECTROLYTIC CAPACITOR AND SOLID ELECTROLYTIC CAPACITOR 有权
标题翻译：固体电解电容器和固体电解电容器的制造方法
公开(公告)号：US20080222862A1
公开(公告)日：2008-09-18
申请号：US12049779
申请日：2008-03-17
申请人： Tetsuro IWASA , Hiroshi NAKAJIMA , Seiji OMURA
发明人： Tetsuro IWASA , Hiroshi NAKAJIMA , Seiji OMURA
IPC分类号： H01G9/004
CPC分类号： H01G9/0036 , H01G9/028 , H01G9/15 , H01G11/48 , H01G11/56 , Y02E60/13 , Y10T29/417
摘要： A method for manufacturing a solid electrolytic capacitor having a solid electrolyte layer containing an electrically conductive polymer layer formed by electrolytic oxidative polymerization, comprising: forming a dielectric layer on a surface of an anode element containing a valve metal; forming an electrically conductive precoat layer on the dielectric layer; and performing electrolytic oxidative polymerization in an electrolytic polymerization solution containing a monomer, a dopant agent and a chelating agent to form the electrically conductive polymer layer on the electrically conductive precoat layer.
摘要翻译：一种固体电解电容器的制造方法，所述固体电解电容器具有含有通过电解氧化聚合形成的导电性聚合物层的固体电解质层，其特征在于，在含有阀金属的阳极元件的表面上形成介电层; 在介电层上形成导电预涂层; 并在含有单体，掺杂剂和螯合剂的电解聚合溶液中进行电解氧化聚合，以在导电预涂层上形成导电聚合物层。

4. 发明申请

US20110075148A1 SURFACE DEFECT INSPECTION METHOD AND APPARATUS 失效
标题翻译：表面缺陷检查方法和装置
公开(公告)号：US20110075148A1
公开(公告)日：2011-03-31
申请号：US12855873
申请日：2010-08-13
申请人： Kenichi SHITARA , Hiroshi NAKAJIMA
发明人： Kenichi SHITARA , Hiroshi NAKAJIMA
IPC分类号： G01N21/55 , G01N21/47 , G01N21/17
CPC分类号： G01N21/9501 , G01N21/47
摘要： The present invention provides an apparatus and method which enable detecting a microscopic defect sensitively by efficiently collecting and detecting scattering light from a defect in a wider region without enlarging the apparatus. In the apparatus for inspecting a defect on a surface of a sample, including illumination means which irradiates a surface of a sample with laser, reflected light detection means which detects reflected light from the sample, and signal processing means which processes a detected signal and detecting a defect on the sample, the reflected light detection means is configured to include a scattering light detection unit which collects scattering light components of the reflected light from the sample by excluding specularly reflected light components by using an aspheric flannel lens and detecting the scattering light components.
摘要翻译：本发明提供了一种能够通过在不扩大设备的情况下有效地收集和检测来自较宽区域的缺陷的散射光而敏感地检测微观缺陷的装置和方法。在用于检查样品表面上的缺陷的装置中，包括用激光照射样品表面的照射装置，检测来自样品的反射光的反射光检测装置和处理检测信号的信号处理装置，反射光检测装置被配置为包括：散射光检测单元，其通过使用非球面法兰绒透镜排除镜面反射光分量并且检测散射光分量来收集来自样品的反射光的散射光分量。

5. 发明申请

US20130009202A1 GROUP III NITRIDE SEMICONDUCTOR DEVICE, METHOD OF FABRICATING GROUP III NITRIDE SEMICONDUCTOR DEVICE 审中-公开
标题翻译： III族氮化物半导体器件，制备III族氮化物半导体器件的方法
公开(公告)号：US20130009202A1
公开(公告)日：2013-01-10
申请号：US13538513
申请日：2012-06-29
申请人： Yohei ENYA , Yusuke YOSHIZUMI , Takashi KYONO , Takamichi SUMITOMO , Masaki UENO , Katsunori YANASHIMA , Kunihiko TASAI , Hiroshi NAKAJIMA
发明人： Yohei ENYA , Yusuke YOSHIZUMI , Takashi KYONO , Takamichi SUMITOMO , Masaki UENO , Katsunori YANASHIMA , Kunihiko TASAI , Hiroshi NAKAJIMA
IPC分类号： H01L33/32
CPC分类号： H01L33/14 , B82Y20/00 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L33/16 , H01L33/32 , H01S5/0014 , H01S5/0202 , H01S5/0421 , H01S5/3063 , H01S5/3202 , H01S5/3211 , H01S5/34333 , H01S2304/04
摘要： A group-III nitride semiconductor device includes a light emitting layer emitting light of a wavelength in the range of 480 to 600 nm; a first contact layer over the light emitting layer; a second contact layer in direct contact with the first contact layer; and a metal electrode in direct contact with the second contact layer. The first and second contact layers comprise a p-type gallium nitride-based semiconductor. The p-type dopant concentration of the first contact layer is lower than that of the second contact layer. The light emitting layer comprises a gallium nitride-based semiconductor. The interface between the first and second contact layers tilts at an angle of not less than 50 degrees and smaller than 130 degrees from a plane orthogonal to a reference axis extending along the c-axis. The second contact layer has a thickness within the range of 1 to 50 nm.
摘要翻译： III族氮化物半导体器件包括发射波长在480至600nm范围内的光的发光层; 在所述发光层上的第一接触层; 与所述第一接触层直接接触的第二接触层; 以及与第二接触层直接接触的金属电极。第一和第二接触层包括p型氮化镓基半导体。第一接触层的p型掺杂剂浓度低于第二接触层的p型掺杂剂浓度。发光层包括氮化镓基半导体。第一和第二接触层之间的界面从与沿着c轴延伸的参考轴正交的平面以不小于50度且小于130度的角度倾斜。第二接触层的厚度在1〜50nm的范围内。

6. 发明申请

US20120327967A1 GROUP III NITRIDE SEMICONDUCTOR LASER DEVICE, EPITAXIAL SUBSTRATE, METHOD OF FABRICATING GROUP III NITRIDE SEMICONDUCTOR LASER DEVICE 审中-公开
标题翻译： III族氮化物半导体激光器件，外延衬底，制备III族氮化物半导体激光器件的方法
公开(公告)号：US20120327967A1
公开(公告)日：2012-12-27
申请号：US13480178
申请日：2012-05-24
申请人： Yohei ENYA , Yusuke YOSHIZUMI , Takashi KYONO , Takamichi SUMITOMO , Masaki UENO , Katsunori YANASHIMA , Kunihiko TASAI , Hiroshi NAKAJIMA
发明人： Yohei ENYA , Yusuke YOSHIZUMI , Takashi KYONO , Takamichi SUMITOMO , Masaki UENO , Katsunori YANASHIMA , Kunihiko TASAI , Hiroshi NAKAJIMA
IPC分类号： H01S5/323 , H01L33/32
CPC分类号： H01S5/3201 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01S5/0202 , H01S5/028 , H01S5/0425 , H01S5/2009 , H01S5/2031 , H01S5/3202 , H01S5/3211 , H01S5/34333 , H01S2301/176 , H01S2304/04
摘要： A nitride semiconductor laser device includes a p-type cladding layer, an active layer and an n-type cladding layer. The p-type cladding layer and the n-type cladding layer comprise indium and aluminum as group-III constituent. The n-type cladding layer, active layer and p-type cladding layer are arranged along the normal of a semi-polar semiconductor surface of a substrate. This surface tilts toward the m-axis of the hexagonal nitride by an angle of 63 degrees or more and smaller than 80 degrees from a plane orthogonal to a reference axis extending along the c-axis thereof. The active layer generates light having a peak wavelength in the range of 480 to 600 nm. The refractive indices of the n-type cladding layer and p-type cladding layer are smaller than that of GaN. The n-type cladding layer has a thickness of 2 μm or more while the p-type cladding layer has a thickness of 500 nm or more.
摘要翻译：氮化物半导体激光器件包括p型覆层，有源层和n型覆层。 p型覆层和n型覆层包含铟和铝作为III族成分。 n型包覆层，有源层和p型覆层沿着基板的半极性半导体表面的法线配置。该表面从垂直于沿其c轴延伸的基准轴的平面向六角形氮化物的m轴倾斜63度以上且小于80度的角度。有源层产生峰值波长在480至600nm范围内的光。 n型包覆层和p型覆层的折射率小于GaN的折射率。 n型覆层的厚度为2μm以上，p型覆层的厚度为500nm以上。

7. 发明申请

US20120269222A1 NITRIDE SEMICONDUCTOR LASER AND EPITAXIAL SUBSTRATE 有权
标题翻译：氮化物半导体激光和外延衬底
公开(公告)号：US20120269222A1
公开(公告)日：2012-10-25
申请号：US13366636
申请日：2012-02-06
申请人： Takashi KYONO , Yohei ENYA , Takamichi SUMITOMO , Yusuke YOSHIZUMI , Masaki UENO , Katsunori YANASHIMA , Kunihiko TASAI , Hiroshi NAKAJIMA
发明人： Takashi KYONO , Yohei ENYA , Takamichi SUMITOMO , Yusuke YOSHIZUMI , Masaki UENO , Katsunori YANASHIMA , Kunihiko TASAI , Hiroshi NAKAJIMA
IPC分类号： H01S5/343
CPC分类号： H01S5/3201 , B82Y20/00 , H01S5/028 , H01S5/2009 , H01S5/2031 , H01S5/3063 , H01S5/3202 , H01S5/3211 , H01S5/34333 , H01S2304/04
摘要： A nitride semiconductor laser includes an electrically conductive support substrate with a primary surface of a gallium nitride based semiconductor, an active layer provided above the primary surface, and a p-type cladding region provided above the primary surface. The primary surface is inclined relative to a reference plane perpendicular to a reference axis extending in a direction of the c-axis of the gallium nitride based semiconductor. The p-type cladding region includes first and second p-type Group III nitride semiconductor layers. The first p-type semiconductor layer comprises an InAlGaN layer including built-in anisotropic strain. The second p-type semiconductor layer comprises semiconductor different from material of the InAlGaN layer. The first nitride semiconductor layer is provided between the second p-type semiconductor layer and the active layer. The second p-type semiconductor layer has a resistivity lower than that of the first p-type semiconductor layer.
摘要翻译：氮化物半导体激光器包括具有氮化镓基半导体的主表面的导电支撑衬底，设置在主表面上方的有源层和设置在主表面上的p型覆层区域。主表面相对于垂直于在氮化镓基半导体的c轴方向上延伸的参考轴的参考平面倾斜。 p型包层区域包括第一和第二p型III族氮化物半导体层。第一p型半导体层包括包括内置各向异性应变的InAlGaN层。第二p型半导体层包括与InAlGaN层的材料不同的半导体。第一氮化物半导体层设置在第二p型半导体层和有源层之间。第二p型半导体层的电阻率低于第一p型半导体层的电阻率。

8. 发明申请

US20120177974A1 NON-AQUEOUS ELECTROLYTE BATTERY 审中-公开
标题翻译：非水电解电池
公开(公告)号：US20120177974A1
公开(公告)日：2012-07-12
申请号：US13279127
申请日：2011-10-21
申请人： Hiroshi NAKAJIMA , Hideaki Katayama , Yuki Takei
发明人： Hiroshi NAKAJIMA , Hideaki Katayama , Yuki Takei
IPC分类号： H01M2/16 , H01M10/056 , H01M4/131 , H01M10/02 , H01M4/62
CPC分类号： H01M4/505 , H01M2/166 , H01M2/1686 , H01M4/131 , H01M4/62 , H01M10/052 , H01M10/0565 , H01M10/4235
摘要： A non-aqueous electrolyte battery according to the present invention is a non-aqueous electrolyte battery including a positive electrode, a negative electrode, a separator and a non-aqueous electrolyte, wherein aluminum silicate or a derivative thereof is contained in a location that can come into contact with the non-aqueous electrolyte in the battery. In the non-aqueous electrolyte battery, it is preferable that at least one of the separator, the positive electrode, the negative electrode and the non-aqueous electrolyte contains aluminum silicate or a derivative thereof.
摘要翻译：本发明的非水电解质电池是包含正极，负极，隔膜和非水电解质的非水电解质电池，其中硅酸铝或其衍生物包含在可以与电池中的非水电解质接触。在非水电解质电池中，隔板，正极，负极和非水电解质中的至少一种优选含有硅酸铝或其衍生物。

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