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1. 发明申请

US20080185652A1 Simultaneous Conditioning of a Plurality of Memory Cells Through Series Resistors 有权
标题翻译：通过串联电阻同时调节多个存储单元
公开(公告)号：US20080185652A1
公开(公告)日：2008-08-07
申请号：US12060922
申请日：2008-04-02
申请人： Toshijaru Furukawa , Mark C. Hakey , Steven J. Holmes , David V. Horak , Charles W. Koburger , Chung H. Lam , Gerhard I. Meijer
发明人： Toshijaru Furukawa , Mark C. Hakey , Steven J. Holmes , David V. Horak , Charles W. Koburger , Chung H. Lam , Gerhard I. Meijer
IPC分类号： H01L23/62 , H01L21/8234
CPC分类号： H01L27/0629 , H01L27/101 , H01L27/24
摘要： Disclosed are a semiconductor structure and a method that allow for simultaneous voltage/current conditioning of multiple memory elements in a nonvolatile memory device with multiple memory cells. The structure and method incorporate the use of a resistor connected in series with the memory elements to limit current passing through the memory elements. Specifically, the method and structure incorporate a blanket temporary series resistor on the wafer surface above the memory cells and/or permanent series resistors within the memory cells. During the conditioning process, these resistors protect the transition metal oxide in the individual memory elements from damage (i.e., burn-out), once it has been conditioned.
摘要翻译：公开了一种半导体结构和方法，其允许在具有多个存储器单元的非易失性存储器件中同时对多个存储器元件进行电压/电流调节。该结构和方法结合使用与存储器元件串联连接的电阻器来限制电流通过存储器元件。具体地，该方法和结构在存储器单元上方的晶片表面上和/或存储器单元内的永久串联电阻器上并入一个橡皮布暂时串联电阻器。在调节过程中，一旦调节了这些电阻，这些电阻就可以保护各个存储元件中的过渡金属氧化物免受损坏（即烧坏）。

2. 发明授权

US07541608B2 Memory device and method of manufacturing the device by simultaneously conditioning transition metal oxide layers in a plurality of memory cells 失效
标题翻译：存储器件以及通过同时调节多个存储单元中的过渡金属氧化物层来制造器件的方法
公开(公告)号：US07541608B2
公开(公告)日：2009-06-02
申请号：US12030927
申请日：2008-02-14
申请人： Toshijaru Furukawa , Mark C. Hakey , Steven J. Holmes , David V. Horak , Charles W. Koburger , Chung H. Lam , Gerhard I. Meijer
发明人： Toshijaru Furukawa , Mark C. Hakey , Steven J. Holmes , David V. Horak , Charles W. Koburger , Chung H. Lam , Gerhard I. Meijer
IPC分类号： H01L47/00
CPC分类号： H01L27/101 , H01L27/115 , H01L27/2409 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/147 , Y10S438/90
摘要： Disclosed are non-volatile memory devices that incorporate a series of single or double memory cells. The single memory cells are essentially “U” shaped. The double memory cells comprise two essentially “U” shaped memory cells. Each memory cell comprises a memory element having a bi-stable layer sandwiched between two conductive layers. A temporary conductor may be applied to a series of cells and used to bulk condition the bi-stable layers of the cells. Also, due to the “U” shape of the cells, a cross point wire array may be used to connect a series of cells. The cross point wire array allows the memory elements of each cell to be individually identified and addressed for storing information and also allows for the information stored in the memory elements in all of the cells in the series to be simultaneously erased using a block erase process.
摘要翻译：公开了包含一系列单个或双重存储器单元的非易失性存储器件。单个存储器单元基本上是“U”形的。双重存储单元包括两个基本上“U”形的存储单元。每个存储单元包括具有夹在两个导电层之间的双稳态层的存储元件。临时导体可以应用于一系列的电池并且用于批量地调节电池的双稳态层。此外，由于电池的“U”形状，可以使用交叉点线阵列来连接一系列电池。交叉点线阵列允许每个单元的存储元件被单独识别和寻址用于存储信息，并且还允许使用块擦除处理同时擦除存储在串联中的所有单元中的存储器元件中的信息。

3. 发明申请

US20080131995A1 MEMORY DEVICE AND MEHTOD OF MANUFACTURING THE DEVICE BY SIMULATANEOUSLY CONDITIONING TRANSITION METAL OXIDE LAYERS IN A PLURALITY OF MEMORY CELLS 失效
标题翻译：通过在大量存储器电池中模拟过渡金属氧化物层来制造器件的存储器件和器件
公开(公告)号：US20080131995A1
公开(公告)日：2008-06-05
申请号：US12030927
申请日：2008-02-14
申请人： Toshijaru Furukawa , Mark C. Hakey , Steven J. Holmes , David V. Horak , Charles W. Koburger , Chung H. Lam , Gerhard I. Meijer
发明人： Toshijaru Furukawa , Mark C. Hakey , Steven J. Holmes , David V. Horak , Charles W. Koburger , Chung H. Lam , Gerhard I. Meijer
IPC分类号： H01L21/00
CPC分类号： H01L27/101 , H01L27/115 , H01L27/2409 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/147 , Y10S438/90
摘要： Disclosed are non-volatile memory devices that incorporate a series of single or double memory cells. The single memory cells are essentially “U” shaped. The double memory cells comprise two essentially “U” shaped memory cells. Each memory cell comprises a memory element having a bi-stable layer sandwiched between two conductive layers. A temporary conductor may be applied to a series of cells and used to bulk condition the bi-stable layers of the cells. Also, due to the “U” shape of the cells, a cross point wire array may be used to connect a series of cells. The cross point wire array allows the memory elements of each cell to be individually identified and addressed for storing information and also allows for the information stored in the memory elements in all of the cells in the series to be simultaneously erased using a block erase process.
摘要翻译：公开了包含一系列单个或双重存储器单元的非易失性存储器件。单个存储器单元基本上是“U”形的。双重存储单元包括两个基本上“U”形的存储单元。每个存储单元包括具有夹在两个导电层之间的双稳态层的存储元件。临时导体可以应用于一系列的电池并且用于批量地调节电池的双稳态层。此外，由于电池的“U”形状，可以使用交叉点线阵列来连接一系列电池。交叉点线阵列允许每个单元的存储元件被单独识别和寻址用于存储信息，并且还允许使用块擦除处理同时擦除存储在串联中的所有单元中的存储器元件中的信息。

4. 发明授权

US07378678B2 Memory device and method of manufacturing the device by simultaneously conditioning transition metal oxide layers in a plurality of memory cells 有权
标题翻译：存储器件以及通过同时调节多个存储单元中的过渡金属氧化物层来制造器件的方法
公开(公告)号：US07378678B2
公开(公告)日：2008-05-27
申请号：US11748579
申请日：2007-05-15
申请人： Toshijaru Furukawa , Mark C. Hakey , Steven J. Holmes , David V. Horak , Charles W. Koburger, III , Chung H. Lam , Gerhard I. Meijer
发明人： Toshijaru Furukawa , Mark C. Hakey , Steven J. Holmes , David V. Horak , Charles W. Koburger, III , Chung H. Lam , Gerhard I. Meijer
IPC分类号： H01L47/00
CPC分类号： H01L27/101 , H01L27/115 , H01L27/2409 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/147 , Y10S438/90
摘要： Disclosed are non-volatile memory devices that incorporate a series of single or double memory cells. The single memory cells are essentially “U” shaped. The double memory cells comprise two essentially “U” shaped memory cells. Each memory cell comprises a memory element having a bi-stable layer sandwiched between two conductive layers. A temporary conductor may be applied to a series of cells and used to bulk condition the bi-stable layers of the cells. Also, due to the “U” shape of the cells, a cross point wire array may be used to connect a series of cells. The cross point wire array allows the memory elements of each cell to be individually identified and addressed for storing information and also allows for the information stored in the memory elements in all of the cells in the series to be simultaneously erased using a block erase process.
摘要翻译：公开了包含一系列单个或双重存储器单元的非易失性存储器件。单个存储器单元基本上是“U”形的。双重存储单元包括两个基本上“U”形的存储单元。每个存储单元包括具有夹在两个导电层之间的双稳态层的存储元件。临时导体可以应用于一系列的电池并且用于批量地调节电池的双稳态层。此外，由于电池的“U”形状，可以使用交叉点线阵列来连接一系列电池。交叉点线阵列允许每个单元的存储元件被单独识别和寻址用于存储信息，并且还允许使用块擦除处理同时擦除存储在串联中的所有单元中的存储器元件中的信息。

5. 发明授权

US07834384B2 Simultaneous conditioning of a plurality of memory cells through series resistors 有权
标题翻译：通过串联电阻同时调节多个存储单元
公开(公告)号：US07834384B2
公开(公告)日：2010-11-16
申请号：US12060922
申请日：2008-04-02
申请人： Toshijaru Furukawa , Mark C. Hakey , Steven J. Holmes , David V. Horak , Charles W. Koburger, III , Chung H. Lam , Gerhard I. Meijer
发明人： Toshijaru Furukawa , Mark C. Hakey , Steven J. Holmes , David V. Horak , Charles W. Koburger, III , Chung H. Lam , Gerhard I. Meijer
IPC分类号： H01L27/00
CPC分类号： H01L27/0629 , H01L27/101 , H01L27/24
摘要： Disclosed are a semiconductor structure and a method that allow for simultaneous voltage/current conditioning of multiple memory elements in a nonvolatile memory device with multiple memory cells. The structure and method incorporate the use of a resistor connected in series with the memory elements to limit current passing through the memory elements. Specifically, the method and structure incorporate a blanket temporary series resistor on the wafer surface above the memory cells and/or permanent series resistors within the memory cells. During the conditioning process, these resistors protect the transition metal oxide in the individual memory elements from damage (i.e., burn-out), once it has been conditioned.
摘要翻译：公开了一种半导体结构和方法，其允许在具有多个存储器单元的非易失性存储器件中同时对多个存储器元件进行电压/电流调节。该结构和方法结合使用与存储器元件串联连接的电阻器来限制电流通过存储器元件。具体地，该方法和结构在存储器单元上方的晶片表面上和/或存储器单元内的永久串联电阻器上并入一个橡皮布暂时串联电阻器。在调节过程中，一旦调节了这些电阻，这些电阻就可以保护各个存储元件中的过渡金属氧化物免受损坏（即烧坏）。

6. 发明授权

US07256415B2 Memory device and method of manufacturing the device by simultaneously conditioning transition metal oxide layers in a plurality of memory cells 有权
标题翻译：存储器件以及通过同时调节多个存储单元中的过渡金属氧化物层来制造器件的方法
公开(公告)号：US07256415B2
公开(公告)日：2007-08-14
申请号：US11140780
申请日：2005-05-31
申请人： Toshijaru Furukawa , Mark C. Hakey , Steven J. Holmes , David V. Horak , Charles W. Koburger, III , Chung H. Lam , Gerhard I. Meijer
发明人： Toshijaru Furukawa , Mark C. Hakey , Steven J. Holmes , David V. Horak , Charles W. Koburger, III , Chung H. Lam , Gerhard I. Meijer
IPC分类号： H01L47/00
CPC分类号： H01L27/101 , H01L27/115 , H01L27/2409 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/147 , Y10S438/90
摘要： Disclosed are non-volatile memory devices that incorporate a series of single or double memory cells. The single memory cells are essentially “U” shaped. The double memory cells comprise two essentially “U” shaped memory cells. Each memory cell comprises a memory element having a bi-stable layer sandwiched between two conductive layers. A temporary conductor may be applied to a series of cells and used to bulk condition the bi-stable layers of the cells. Also, due to the “U” shape of the cells, a cross point wire array may be used to connect a series of cells. The cross point wire array allows the memory elements of each cell to be individually identified and addressed for storing information and also allows for the information stored in the memory elements in all of the cells in the series to be simultaneously erased using a block erase process.
摘要翻译：公开了包含一系列单个或双重存储器单元的非易失性存储器件。单个存储器单元基本上是“U”形的。双重存储单元包括两个基本上“U”形的存储单元。每个存储单元包括具有夹在两个导电层之间的双稳态层的存储元件。临时导体可以应用于一系列的电池并且用于批量地调节电池的双稳态层。此外，由于电池的“U”形状，可以使用交叉点线阵列来连接一系列电池。交叉点线阵列允许每个单元的存储元件被单独识别和寻址用于存储信息，并且还允许使用块擦除处理同时擦除存储在串联中的所有单元中的存储器元件中的信息。

7. 发明申请

US20080142925A1 PROGRAMMABLE-RESISTANCE MEMORY CELL 有权
标题翻译：可编程电阻存储器单元
公开(公告)号：US20080142925A1
公开(公告)日：2008-06-19
申请号：US11612501
申请日：2006-12-19
申请人： Johannes G. Bednorz , Eric A. Joseph , Siegfried F. Karg , Chung H. Lam , Gerhard I. Meijer , Alejandro G. Schrott
发明人： Johannes G. Bednorz , Eric A. Joseph , Siegfried F. Karg , Chung H. Lam , Gerhard I. Meijer , Alejandro G. Schrott
IPC分类号： H01L29/86 , H01L21/4763
CPC分类号： H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/1253 , H01L45/145 , H01L45/146 , H01L45/16 , H01L45/1641 , Y10S438/90
摘要： The present invention relates to a memory cell comprising: a resistive structure; at least two electrodes coupled to the resistive structure, and at least one hydrogen reservoir structure, wherein the application of an electrical signal to one of the at least two electrodes causes the electrical resistance of the resistive structure to be modified by altering a hydrogen-ion concentration in the resistive structure.
摘要翻译：本发明涉及一种存储单元，包括：电阻结构; 耦合到电阻结构的至少两个电极和至少一个氢储存器结构，其中将电信号施加到所述至少两个电极中的一个电极导致通过改变氢离子来修改电阻结构的电阻电阻结构中的浓度。

8. 发明授权

US07834339B2 Programmable-resistance memory cell 有权
标题翻译：可编程电阻存储单元
公开(公告)号：US07834339B2
公开(公告)日：2010-11-16
申请号：US11612501
申请日：2006-12-19
申请人： Johannes G. Bednorz , Eric A. Joseph , Siegfried F. Karg , Chung H. Lam , Gerhard I. Meijer , Alejandro G. Schrott
发明人： Johannes G. Bednorz , Eric A. Joseph , Siegfried F. Karg , Chung H. Lam , Gerhard I. Meijer , Alejandro G. Schrott
IPC分类号： H01L45/00
CPC分类号： H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/1253 , H01L45/145 , H01L45/146 , H01L45/16 , H01L45/1641 , Y10S438/90
摘要： The present invention relates to a memory cell comprising: a resistive structure; at least two electrodes coupled to the resistive structure, and at least one hydrogen reservoir structure, wherein the application of an electrical signal to one of the at least two electrodes causes the electrical resistance of the resistive structure to be modified by altering a hydrogen-ion concentration in the resistive structure.
摘要翻译：本发明涉及一种存储单元，包括：电阻结构; 耦合到电阻结构的至少两个电极和至少一个氢储存器结构，其中将电信号施加到所述至少两个电极中的一个电极导致通过改变氢离子来修改电阻结构的电阻电阻结构中的浓度。

9. 发明申请

US20100039848A1 NON-VOLATILE PROGRAMMABLE OPTICAL ELEMENT EMPLOYING F-CENTERS 有权
标题翻译：非挥发性可编程光学元件使用F中心
公开(公告)号：US20100039848A1
公开(公告)日：2010-02-18
申请号：US12189983
申请日：2008-08-12
申请人： Gerhard I. Meijer , Thilo H. C. Stoferle
发明人： Gerhard I. Meijer , Thilo H. C. Stoferle
IPC分类号： G11C11/34 , H01L21/02
CPC分类号： G02F1/011 , G02F1/1523 , G02F1/225 , G02F1/313 , G02F3/022 , G02F2203/15
摘要： A non-volatile programmable electro-optical element alters absorption characteristics of an optical medium that comprises a doped transition metal oxide material including F-centers. The F-centers are electrostatically moved into or out of the regions containing a wavefunction of an optical beam. A specific F-center profile in the transition metal oxide material may be programmed into the optical medium. The F-center profile alters an absorption profile within the optical medium. The spectral range for transmission of electromagnetic radiation in the optical medium may be tailored by the F-centers. Once the absorption profile is set by an electrical signal, the optical element maintains its state even when the electrical signal is turned off. Thus, the programming node may be disconnected from a power supply network, thereby enabling a low power operation of the electro-optical element. The inventive electro-optical element may be employed for both the visible and the infrared wavelength spectrum.
摘要翻译：非易失性可编程电光元件改变包括掺杂的过渡金属氧化物材料（包括F-中心）的光学介质的吸收特性。 F中心被静电地移入或移出包含光束波函数的区域。过渡金属氧化物材料中的特定的F中心分布可以被编程到光学介质中。 F中心轮廓改变光学介质内的吸收曲线。光介质中电磁辐射传输的光谱范围可以由F-中心来定制。一旦通过电信号设置吸收曲线，即使当电信号被关闭时，光学元件也保持其状态。因此，编程节点可以与电源网络断开，从而能够实现电光元件的低功率操作。本发明的电光元件可以用于可见光和红外波长光谱。

10. 发明申请

US20090186443A1 METHOD TO ENHANCE PERFORMANCE OF COMPLEX METAL OXIDE PROGRAMMABLE MEMORY 审中-公开
标题翻译：提高复合金属氧化物可编程存储器性能的方法
公开(公告)号：US20090186443A1
公开(公告)日：2009-07-23
申请号：US12017848
申请日：2008-01-22
申请人： Eric A. Joseph , Chung Hon Lam , Gerhard I. Meijer , Stephen M. Rossnagel , Alejandro Gabriel Schrott
发明人： Eric A. Joseph , Chung Hon Lam , Gerhard I. Meijer , Stephen M. Rossnagel , Alejandro Gabriel Schrott
IPC分类号： H01L21/34
CPC分类号： H01L45/08 , H01L45/1233 , H01L45/1266 , H01L45/1273 , H01L45/147 , H01L45/16
摘要： A method of incorporating oxygen vacancies near an electrode/oxide interface region of a complex metal oxide programmable memory cell which includes forming a first electrode of a metallic material which remains metallic upon oxidation, forming a second electrode facing the first electrode, forming an oxide layer in between the first and second electrodes, applying an electrical signal to the first electrode such that oxygen ions from the oxide layer are embedded in and oxidize the first electrode, and forming oxygen vacancies near the electrode/oxide interface region of the complex metal oxide programmable memory cell.
摘要翻译：一种在复合金属氧化物可编程存储单元的电极/氧化物界面区域附近引入氧空位的方法，其包括在氧化时形成保持金属的金属材料的第一电极，形成面向第一电极的第二电极，形成氧化物层在第一和第二电极之间，向第一电极施加电信号，使得来自氧化物层的氧离子嵌入并氧化第一电极，并在复合金属氧化物可编程的电极/氧化物界面区域附近形成氧空位记忆单元

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