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1. 发明授权

US06992869B2 Magnetic resistance device 失效
标题翻译：磁阻器件
公开(公告)号：US06992869B2
公开(公告)日：2006-01-31
申请号：US09777325
申请日：2001-02-06
申请人： Toshihisa Suzuki , Naoshi Horiai
发明人： Toshihisa Suzuki , Naoshi Horiai
IPC分类号： G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B5/3909
摘要： In order to realize a magnetic resistance device having a high magnetic resistance change rate, satisfactory production yield and a low level of variation in production, a pair of magnetic tunnel resistance devices 2 employing a laminated structure comprised of antiferromagnetic film 8, lower magnetic layer 9, barrier film 10 and upper magnetic layer 11 are independently and separately formed by ion beam etching on a lower electrode 3 and in common with said lower electrode 3 provided on a substrate 5. A pair of independent upper electrodes 4 are formed on upper magnetic layer 11. As a result, a pair of magnetic tunnel resistance devices 2 are formed connected in series on substrate 5.
摘要翻译：为了实现具有高磁阻变化率，令人满意的生产率和低生产变化水平的磁阻装置，采用由反铁磁膜8，下磁层9 ，阻挡膜10和上磁性层11通过在下电极3上的离子束蚀刻和与设置在基板5上的所述下电极3共同地分别形成。一对独立的上电极4形成在上磁性层11上。结果，形成了一对串联连接在基板5上的磁通电阻装置2。

2. 发明授权

US07015558B2 Optical device free from stress due to difference in thermal expansion coefficient between parts and process for fabrication thereof 失效
公开(公告)号：US07015558B2
公开(公告)日：2006-03-21
申请号：US10211266
申请日：2002-08-05
申请人： Yasuaki Takano , Naoshi Horiai
发明人： Yasuaki Takano , Naoshi Horiai
IPC分类号： H01L31/0232 , H01J1/62
CPC分类号： G02B7/008
摘要： An optical device is broken down into an optical element made of optical crystal and a holder made of alloy approximated in thermal expansion coefficient to the optical crystal, and the optical element is soldered to or melt bonded to the holder with a piece of solder or glass; the joint area is spaced from the periphery of the optical crystal so that a buffer area, which is spaced from the periphery, is created between the periphery and the joint area; even if cracks and/or scratches have been occurred in an end surface of the optical element, thermal stress is less influential in growing the scratches by virtue of the buffer area, and the optical device keeps the design optical characteristics.

3. 发明授权

US06861272B2 Optical device free from stress due to difference in thermal expansion coefficient between parts and process for fabrication thereof 失效
标题翻译：由于部件之间的热膨胀系数的差异和其制造过程而没有应力的光学装置
公开(公告)号：US06861272B2
公开(公告)日：2005-03-01
申请号：US10417147
申请日：2003-04-17
申请人： Yasuaki Takano , Naoshi Horiai
发明人： Yasuaki Takano , Naoshi Horiai
IPC分类号： G02B7/00 , H01L21/00
CPC分类号： G02B7/008
摘要： An optical device is broken down into an optical element made of optical crystal and a holder made of alloy approximated in thermal expansion coefficient to the optical crystal, and the optical element is soldered to or melt bonded to the holder with a piece of solder or glass; the joint area is spaced from the periphery of the optical crystal so that a buffer area, which is spaced from the periphery, is created between the periphery and the joint area; even if cracks and/or scratches have been occurred in an end surface of the optical element, thermal stress is less influential in growing the scratches by virtue of the buffer area, and the optical device.
摘要翻译：将光学元件分解为由光学晶体制成的光学元件和由热膨胀系数近似于光学晶体的合金制成的保持器，并且光学元件用一块焊料或玻璃焊接或熔接到保持器 ; 接合区域与光学晶体的周边隔开，从而在周边和接合区域之间产生与周边隔开的缓冲区域; 即使在光学元件的端面发生裂纹和/或划痕，热应力也因缓冲区域而产生划伤影响较小，并且光学装置。

4. 发明授权

US5273836A Magnetooptic recording material 失效
标题翻译：磁光记录材料
公开(公告)号：US5273836A
公开(公告)日：1993-12-28
申请号：US885906
申请日：1992-05-18
申请人： Toshitaka Fujii , Naoshi Horiai , Tadao Tokushima , Michihiko Kubota
发明人： Toshitaka Fujii , Naoshi Horiai , Tadao Tokushima , Michihiko Kubota
IPC分类号： G11B11/105 , G11B5/66
CPC分类号： G11B11/10586 , Y10S428/90
摘要： Significant improvement in corrosion resistance of a magnetooptic material for electric and electronic applications is achieved by a composition (RE.sub.a, TM.sub.b)1-c-.sub.d M.sub.c Be.sub.d of specified content ratios of the components, typically a Tb-Fe-Co type alloy with combined addition of M and Be.
摘要翻译：用于电气和电子应用的磁光材料的耐腐蚀性的显着改善通过组分（REa，TMb）1-c-dMcBed来实现，所述组合物通过组分的特定含量比（通常为Tb-Fe-Co型合金）与组合添加 M和Be。

5. 发明申请

US20100108117A1 THERMOELECTRIC MODULE PACKAGE AND MANUFACTURING METHOD THEREFOR 审中-公开
标题翻译：热电模块封装及其制造方法
公开(公告)号：US20100108117A1
公开(公告)日：2010-05-06
申请号：US12607210
申请日：2009-10-28
申请人： TETSUTSUGU HAMANO , Hiroyuki Yamashita , Naoshi Horiai
发明人： TETSUTSUGU HAMANO , Hiroyuki Yamashita , Naoshi Horiai
IPC分类号： H01L35/20 , B23K31/02
CPC分类号： H01L35/34 , B23K1/0016 , B23K2101/40 , H01L35/32 , H01L2924/0002 , H01L2924/00
摘要： A package is adapted to a thermoelectric module in which a plurality of thermoelectric elements is electrically connected in series and aligned between a lower electrode and an upper electrode and is constituted of a metal frame and a metal base which is a metal plate having good thermal conductivity composed of copper, aluminum, silver, or alloy. The metal frame is bonded onto the periphery of the metal base via a low melting point solder whose melting point is lower than that of the solder used for forming the thermoelectric module. The thermoelectric module is circumscribed by the metal frame so that the lower electrode thereof is attached onto the metal base via an insulating resin layer.
摘要翻译：一种封装适用于其中多个热电元件串联电连接并且在下电极和上电极之间对准的热电模块，并且由金属框架和作为具有良好导热性的金属板的金属基座构成由铜，铝，银或合金组成。金属框架通过熔点比用于形成热电模块的焊料的熔点低的低熔点焊料结合到金属基体的周边。热电模块由金属框架外接，使得其下电极经由绝缘树脂层附接到金属基底上。

6. 发明授权

US5425819A Magnetoresistive material 失效
标题翻译：磁阻材料
公开(公告)号：US5425819A
公开(公告)日：1995-06-20
申请号：US297222
申请日：1994-08-29
申请人： Toshiyuki Oohashi , Naoshi Horiai , Makoto Shiraki
发明人： Toshiyuki Oohashi , Naoshi Horiai , Makoto Shiraki
IPC分类号： C22C5/06 , C22C38/00 , C22C38/10 , G11B5/39 , H01F10/08 , H01F10/16 , H01F10/32 , H01L43/10 , H01F1/147
CPC分类号： H01L43/10
摘要： A granule-type magnetoresistive material is used to form a MR component, which is equipped in a magnetic head, or the like. When placing the magnetoresistive material in the external magnetic field, the electric resistance is altered responsive to a variation of the external magnetic field. In order to increase a magnetic-field sensitivity, the magnetoresistive material is composed of an alloy whose atomic composition is expressed by a chemical formula of (Co.sub.1-x Fe.sub.x).sub.y Ag.sub.1-y, where 0.45.ltoreq.x.ltoreq.0.55 and 0.24.ltoreq.y.ltoreq.0.35; or another chemical formula of (Co.sub.1-x Fe.sub.x).sub.y (Ag.sub.1-z Cu.sub.z).sub.1-y, where 0.45.ltoreq.x.ltoreq.0.55, 0.24.ltoreq.y.ltoreq.0.35 and z.ltoreq.0.14.
摘要翻译：使用颗粒型磁阻材料来形成装配在磁头等中的MR部件。当将磁阻材料放置在外部磁场中时，响应于外部磁场的变化而改变电阻。为了提高磁场灵敏度，磁阻材料由原子组成由化学式（Co1-xFex）yAg1-y表示的合金构成，其中0.45

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