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1. 发明授权

US4748646A X-ray lithography system 失效
标题翻译： X射线光刻系统
公开(公告)号：US4748646A
公开(公告)日：1988-05-31
申请号：US27553
申请日：1987-03-18
申请人： Toshihiko Osada , Ichiro Honjo , Kenji Sugishima
发明人： Toshihiko Osada , Ichiro Honjo , Kenji Sugishima
IPC分类号： G01N23/00 , G03F7/20 , G21K1/06 , G21K5/00 , G21K5/02 , H01J35/00 , H01L21/027 , H05G1/00 , G21K5/10
CPC分类号： G03F7/70075 , G03F7/70808
摘要： An X-ray lithography system, in which an X-ray beam is separated from synchrotron radiation beams and reflected by a scanning mirror which vertically scans the reflected X-ray beam. The X-ray is irradiated into an exposure chamber via a beryllium window, which is vertically oscillated in such a manner that the beryllium window is shifted up and down in synchronization with the scanning operation of the X-ray beam.
摘要翻译：一种X射线光刻系统，其中X射线束与同步加速器辐射束分离并由扫描反射镜反射，该扫描镜垂直扫描反射的X射线束。 X射线通过铍窗被照射到曝光室中，铍窗垂直振荡，使得铍窗与X射线束的扫描操作同步地上下移动。

2. 发明授权

US5430292A Pattern inspection apparatus and electron beam apparatus 失效
标题翻译：图案检查装置和电子束装置
公开(公告)号：US5430292A
公开(公告)日：1995-07-04
申请号：US134860
申请日：1993-10-12
申请人： Ichiro Honjo , Kenji Sugishima , Masaki Yamabe
发明人： Ichiro Honjo , Kenji Sugishima , Masaki Yamabe
IPC分类号： G03F1/00 , H01J37/244 , H01J37/30 , H01J37/29
CPC分类号： G03F1/86 , H01J37/244 , H01J37/3005 , H01J2237/221 , H01J2237/2441 , H01J2237/24435 , H01J2237/2447 , H01J2237/24495 , H01J2237/24592 , H01J2237/2817
摘要： A pattern inspection apparatus is designed to quickly and accurately perform an inspection of an inspecting sample, such as masks, wafers or so forth by irradiating electron beams onto the inspection sample and detecting a secondary electron or a backscattered electron reflected from the surface of the inspecting sample or a transmission electron passing through the inspection sample. The pattern inspection apparatus includes an electron beam generating means including at least one electron gun for generating at least one electron beam irradiating on the surface of the inspecting sample, a movable means for supporting the inspecting sample, a detecting means including a plurality of electron detecting elements for detecting electrons containing information related to the construction of the inspection sample and a detection signal processing means for processing simultaneously or in parallel formation the outputs of the electron detecting elements of the detecting means. Also, when a plurality of electron beams are used for simultaneous irradiation of the inspecting sample, the pattern inspection apparatus is provided a mechanism for avoiding interference of a reflected beam of the adjacent electron beam.
摘要翻译：图案检查装置被设计为通过将电子束照射到检查样品上并检测从检查表面反射的二次电子或反向散射电子，来快速且准确地对检查样品进行检查，例如掩模，晶片等。样品或通过检查样品的透射电子。图案检查装置包括：电子束产生装置，包括至少一个电子枪，用于产生照射在检查样品的表面上的至少一个电子束;支撑检查样品的可移动装置;检测装置，包括多个电子检测用于检测包含与检查样品的构造相关的信息的电子的元件和用于同时或并行地形成检测装置的电子检测元件的输出的检测信号处理装置。此外，当使用多个电子束同时照射检查样本时，图案检查装置被提供用于避免相邻电子束的反射光束的干涉的机构。

3. 发明授权

US5557105A Pattern inspection apparatus and electron beam apparatus 失效
标题翻译：图案检查装置和电子束装置
公开(公告)号：US5557105A
公开(公告)日：1996-09-17
申请号：US320377
申请日：1994-10-11
申请人： Ichiro Honjo , Kenji Sugishima , Masaki Yamabe
发明人： Ichiro Honjo , Kenji Sugishima , Masaki Yamabe
IPC分类号： H01J37/30 , H01J37/06 , H01J37/244
CPC分类号： H01J37/04 , H01J37/244 , H01J37/28 , H01J37/3007 , H01J2237/04924 , H01J2237/062 , H01J2237/0635 , H01J2237/1205 , H01J2237/1504 , H01J2237/1516 , H01J2237/153 , H01J2237/24455 , H01J2237/2447 , H01J2237/2448 , H01J2237/24495 , H01J2237/2817
摘要： A pattern inspection apparatus is designed to quickly and accurately perform an inspection of an inspection sample, such as a mask or a wafer or the like by irradiating electron beams onto the inspection sample and detecting secondary or backscattered electrons reflected from the surface of the inspection sample and/or transmitted electrons passing through the inspection sample. The pattern inspection apparatus includes an electron beam generator including at least one electron gun for generating at least one electron beam irradiating onto the surface of the inspection sample. A movable support is provided for supporting the inspection sample. The apparatus also includes a detector unit having a plurality of electron detecting elements for detecting electrons containing information related to the construction of the inspection sample and a detection signal processor for processing simultaneously or in parallel formation the outputs of the electron detecting elements of the detector. Also, when a plurality of electron beams are used for simultaneous irradiation of the inspection sample, the pattern inspection apparatus includes a mechanism for avoiding interference between the reflected electrons of the adjacent electron beams.
摘要翻译：图案检查装置被设计为通过将电子束照射到检查样品上并检测从检查样品的表面反射的次级或反向散射电子来快速且准确地执行诸如掩模或晶片等的检查样本的检查和/或穿过检查样品的透射电子。图案检查装置包括电子束发生器，其包括至少一个电子枪，用于产生照射到检查样品表面上的至少一个电子束。提供用于支撑检查样品的可移动支撑件。该装置还包括具有多个电子检测元件的检测器单元，用于检测包含与检查样本的结构有关的信息的电子;以及检测信号处理器，用于同时或并行地形成检测器的电子检测元件的输出。此外，当使用多个电子束同时照射检查样本时，图案检查装置包括用于避免相邻电子束的反射电子之间的干涉的机构。

4. 发明授权

US5384463A Pattern inspection apparatus and electron beam apparatus 失效
标题翻译：图案检查装置和电子束装置
公开(公告)号：US5384463A
公开(公告)日：1995-01-24
申请号：US238349
申请日：1994-05-05
申请人： Ichiro Honjo , Kenji Sugishima , Masaki Yamabe
发明人： Ichiro Honjo , Kenji Sugishima , Masaki Yamabe
IPC分类号： G03F1/86 , H01J37/244 , H01J37/30 , H01J37/06
CPC分类号： G03F1/86 , H01J37/244 , H01J37/3005 , H01J2237/221 , H01J2237/2441 , H01J2237/24435 , H01J2237/2447 , H01J2237/24495 , H01J2237/24592 , H01J2237/2817
摘要： A pattern inspection apparatus is designed to quickly and accurately perform an inspection of an inspection sample, such as a mask or a wafer or the like by irradiating electron beams onto the inspection sample and detecting secondary or backscattered electrons reflected from the surface of the inspection sample and/or transmitted electrons passing through the inspection sample. The pattern inspection apparatus includes an electron beam generator including at least one electron gun for generating at least one electron beam irradiating onto the surface of the inspection sample. A movable support is provided for supporting the inspection sample. The apparatus also includes a detector unit having a plurality of electron detecting elements for detecting electrons containing information related to the construction of the inspection sample and a detection signal processor for processing simultaneously or in parallel formation the outputs of the electron detecting elements of the detector. Also, when a plurality of electron beams are used for simultaneous irradiation of the inspection sample, the pattern inspection apparatus is provided with a mechanism for avoiding interference between the reflected electrons of the adjacent electron beams.
摘要翻译：图案检查装置被设计为通过将电子束照射到检查样品上并检测从检查样品的表面反射的次级或反向散射电子来快速且准确地执行诸如掩模或晶片等的检查样本的检查和/或穿过检查样品的透射电子。图案检查装置包括电子束发生器，其包括至少一个电子枪，用于产生照射到检查样品表面上的至少一个电子束。提供用于支撑检查样品的可移动支撑件。该装置还包括具有多个电子检测元件的检测器单元，用于检测包含与检查样本的结构有关的信息的电子;以及检测信号处理器，用于同时或并行地形成检测器的电子检测元件的输出。此外，当使用多个电子束同时照射检查样本时，图案检查装置设置有用于避免相邻电子束的反射电子之间的干涉的机构。

5. 发明申请

US20090240366A1 METHOD AND SYSTEM FOR DETECTION OF TOOL PERFORMANCE DEGRADATION AND MISMATCH 有权
标题翻译：用于检测工具性能降低和误差的方法和系统
公开(公告)号：US20090240366A1
公开(公告)日：2009-09-24
申请号：US12416018
申请日：2009-03-31
申请人： Sanjeev Kaushal , Sukesh Janubhai Patel , Kenji Sugishima
发明人： Sanjeev Kaushal , Sukesh Janubhai Patel , Kenji Sugishima
IPC分类号： G06F17/00 , G06F15/18 , G06N3/12 , G06N7/00
CPC分类号： G05B13/0265 , G05B19/4065 , G05B2219/33041 , G05B2219/37252 , G06N5/04 , G06N99/005 , Y02P90/86
摘要： Autonomous biologically based learning tool system(s) and method(s) that the tool system(s) employs for learning and analysis of performance degradation and mismatch are provided. The autonomous biologically based learning tool system includes (a) one or more tool systems that perform a set of specific tasks or processes and generate assets and data related to the assets that characterize the various processes and associated tool performance; (b) an interaction manager that receives and formats the data, and (c) an autonomous learning system based on biological principles of learning. Objectively generated knowledge gleaned from synthetic or production data can be utilized to determine a mathematical relationship among a specific output variable and a set of associated influencing variables. The generated relationship facilitates assessment of performance degradation of a set of tools, and performance mismatch among tools therein.
摘要翻译：提供了自动生物学的学习工具系统和工具系统用于学习和分析性能下降和失配的方法。自主的基于生物学的学习工具系统包括（a）执行一组特定任务或过程的一个或多个工具系统，并且生成与表征各种过程和相关工具性能的资产相关的资产和数据; （b）接收和格式化数据的交互管理器，（c）基于生物学习原理的自主学习系统。可以利用从合成或生产数据中获取的客观生成的知识来确定特定输出变量与一组相关影响变量之间的数学关系。生成的关系有助于评估一组工具的性能下降，以及其中的工具之间的性能不匹配。

6. 发明授权

US07340377B2 Monitoring a single-wafer processing system 有权
标题翻译：监控单晶圆处理系统
公开(公告)号：US07340377B2
公开(公告)日：2008-03-04
申请号：US11456020
申请日：2006-07-06
申请人： Sanjeev Kaushal , Pradeep Pandey , Kenji Sugishima
发明人： Sanjeev Kaushal , Pradeep Pandey , Kenji Sugishima
IPC分类号： G06F11/30
CPC分类号： G05B19/41875 , C23C16/52 , G05B23/0254 , G05B2219/37514 , G05B2219/37533 , G05B2219/45031 , Y02P90/22 , Y02P90/26
摘要： A method of monitoring a single-wafer processing system in real-time using low-pressure based modeling techniques that include processing a wafer in a processing chamber; determining a measured dynamic process response for a rate of change for a process parameter; executing a real-time dynamic model to generate a predicted dynamic process response; determining a dynamic estimation error using a difference between the predicted dynamic process response and the expected process response; and comparing the dynamic estimation error to operational limits.
摘要翻译：一种使用基于低压的建模技术来实时监测单晶片处理系统的方法，其包括在处理室中处理晶片; 确定针对过程参数的变化率的测量的动态过程响应; 执行实时动态模型以产生预测的动态过程响应; 使用预测的动态过程响应和预期过程响应之间的差来确定动态估计误差; 并将动态估计误差与运算极限进行比较。

7. 发明申请

US20070239375A1 MONITORING A SYSTEM DURING LOW-PRESSURE PROCESSES 有权
标题翻译：在低压过程中监测系统
公开(公告)号：US20070239375A1
公开(公告)日：2007-10-11
申请号：US11278379
申请日：2006-03-31
申请人： Sanjeev Kaushal , Pradeep Pandey , Kenji Sugishima
发明人： Sanjeev Kaushal , Pradeep Pandey , Kenji Sugishima
IPC分类号： G06F19/00
CPC分类号： G05B19/41875 , C23C16/52 , G05B23/0254 , G05B2219/37514 , G05B2219/37533 , G05B2219/45031 , Y02P90/22 , Y02P90/26
摘要： A method of monitoring a processing system in real-time using low-pressure based modeling techniques that include processing one or more of wafers in a processing chamber; determining a measured dynamic process response for a rate of change for a process parameter; executing a real-time dynamic model to generate a predicted dynamic process response; determining a dynamic estimation error using a difference between the predicted dynamic process response and the expected process response; and comparing the dynamic estimation error to operational limits.
摘要翻译：一种使用基于低压的建模技术实时监控处理系统的方法，所述技术包括处理处理室中的一个或多个晶片; 确定针对过程参数的变化率的测量的动态过程响应; 执行实时动态模型以产生预测的动态过程响应; 使用预测的动态过程响应和预期过程响应之间的差来确定动态估计误差; 并将动态估计误差与运算极限进行比较。

8. 发明授权

US07025280B2 Adaptive real time control of a reticle/mask system 失效
标题翻译：光罩/掩模系统的自适应实时控制
公开(公告)号：US07025280B2
公开(公告)日：2006-04-11
申请号：US10769623
申请日：2004-01-30
申请人： Sanjeev Kaushal , Pradeep Pandey , Kenji Sugishima
发明人： Sanjeev Kaushal , Pradeep Pandey , Kenji Sugishima
IPC分类号： G06F7/66 , G06F17/50 , C23C16/00 , H05B3/02
CPC分类号： G03F1/68 , G03F1/78 , H01L21/67248
摘要： An adaptive real time thermal processing system is presented that includes a multivariable controller. Generally, the method includes creating a dynamic model of the thermal processing system; incorporating reticle/mask curvature in the dynamic model; coupling a diffusion-amplification model into the dynamic thermal model; creating a multivariable controller; parameterizing the nominal setpoints into a vector of intelligent setpoints; creating a process sensitivity matrix; creating intelligent setpoints using an efficient optimization method and process data; and establishing recipes that select appropriate models and setpoints during run-time.
摘要翻译：提出了一种包括多变量控制器的自适应实时热处理系统。通常，该方法包括创建热处理系统的动态模型; 在动态模型中结合掩模/掩模曲率; 将扩散扩增模型耦合到动态热模型中; 创建一个多变量控制器; 将标称设定值参数化为智能设定点的向量; 创建一个过程敏感性矩阵; 使用有效的优化方法和过程数据创建智能设定点; 并建立在运行期间选择合适的模型和设定值的配方。

9. 发明授权

US4352724A Method of manufacturing a semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US4352724A
公开(公告)日：1982-10-05
申请号：US208391
申请日：1980-11-19
申请人： Kenji Sugishima , Tadakazu Takada
发明人： Kenji Sugishima , Tadakazu Takada
IPC分类号： H01L21/306 , H01L21/033 , H01L21/302 , H01L21/3065 , H01L21/311 , H01L21/3213 , H01L21/768 , C23C15/00 , C23F1/00
CPC分类号： H01L21/76804 , H01L21/033 , H01L21/0332 , H01L21/0334 , H01L21/0335 , H01L21/3065 , H01L21/31111 , H01L21/31116 , H01L21/32134 , H01L21/32136 , H01L21/32137 , H01L21/76838
摘要： A method of manufacturing a semiconductor device having a multi-layer structure comprises the steps of patterning in accordance with a predetermined pattern a thin film of photoresist formed on a film to be etched which has been formed on a semiconductor substrate, etching the film to be etched partly by an isotropic etching using said patterned film as a mask, completing the etching by an anisotropic etching in the direction of its depth, resulting in tapered or inclined sides on the etched film. The isotropic and anisotropic etchings may be carried out in the same apparatus by changing the reactive gases used in these etchings and/or the conditions of each etching, such as the amount of gas, the gas pressure and the applied radio frequency power.
摘要翻译：一种制造具有多层结构的半导体器件的方法包括以下步骤：根据预定图案将形成在待蚀刻的膜上的光致抗蚀剂薄膜形成在半导体衬底上，将该膜蚀刻成通过使用所述图案化膜作为掩模的各向同性蚀刻部分地蚀刻，通过在其深度方向上的各向异性蚀刻完成蚀刻，导致蚀刻膜上的锥形或倾斜侧。各向同性和各向异性蚀刻可以通过改变在这些蚀刻中使用的反应气体和/或每个蚀刻的条件，例如气体量，气体压力和施加的射频功率，在相同的装置中进行。

10. 发明授权

US08396582B2 Method and apparatus for self-learning and self-improving a semiconductor manufacturing tool 有权
标题翻译：用于自学习和自我改进的半导体制造工具的方法和装置
公开(公告)号：US08396582B2
公开(公告)日：2013-03-12
申请号：US12697121
申请日：2010-01-29
申请人： Sanjeev Kaushal , Sukesh Janubhai Patel , Kenji Sugishima
发明人： Sanjeev Kaushal , Sukesh Janubhai Patel , Kenji Sugishima
IPC分类号： G06F15/18 , G06N3/08 , G06N3/12
CPC分类号： G06N99/005 , G05B13/0265 , G06N5/04
摘要： System(s) and method(s) for optimizing performance of a manufacturing tool are provided. Optimization relies on recipe drifting and generation of knowledge that capture relationships among product output metrics and input material measurement(s) and recipe parameters. Optimized recipe parameters are extracted from a basis of learned functions that predict output metrics for a current state of the manufacturing tool and measurements of input material(s). Drifting and learning are related and lead to dynamic optimization of tool performance, which enables optimized output from the manufacturing tool as the operation conditions of the tool changes. Features of recipe drifting and associated learning can be autonomously or externally configured through suitable user interfaces, which also can be drifted to optimize end-user interaction.
摘要翻译：提供了用于优化制造工具性能的系统和方法。优化依赖于食谱漂移和产生知识，捕获产品输出指标和输入材料测量和配方参数之间的关系。从学习功能的基础提取优化的配方参数，该函数预测制造工具的当前状态的输出度量和输入材料的测量。漂移和学习相关，导致刀具性能的动态优化，从而随着刀具的操作条件的变化，可以优化制造工具的输出。配方漂移和相关学习的特征可以通过适当的用户界面进行自主或外部配置，也可以通过漂移来优化最终用户交互。

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