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1. 发明专利

JP2017079472A 動画像符号化装置及び方法有权
公开(公告)号：JP2017079472A
公开(公告)日：2017-04-27
申请号：JP2016213586
申请日：2016-10-31
申请人：株式会社東芝 , Toshiba Corp
发明人： ASAKA SAORI , NAKAJO TAKESHI , TANIZAWA AKIYUKI , YASUDA TOSHITAKE , WADA TADASHI , WATANABE TAKASHI
IPC分类号： H04N19/52 , H04N19/70
摘要：【課題】符号化済みブロックから1つを選択して動きベクトル算出の自由度を高めつつ、動きベクトル選択情報の付加情報を削減する動画像符号化装置及び動画像復号化装置を提供する。【解決手段】動画像を動き補償予測符号化する符号化装置は、符号化対象ブロックに隣接する符号化済みブロックから、動きベクトルを持つブロックである利用可能ブロック及び利用可能ブロックの数を求め、符号化済みブロック利用可能ブロックから、1つの選択ブロックを選択する取得部選択部110と、利用可能ブロックの数に応じた符号表を用いて、選択ブロックを特定する選択情報を符号化する選択情報符号化器112と、選択ブロックが有する動きベクトルを用いて、符号化対象ブロックを動き補償予測符号化する画像符号化部とを備える。【選択図】図1

2. 发明专利

JP2014179707A Image encoder, and encoding method 审中-公开
标题翻译：图像编码器和编码方法
公开(公告)号：JP2014179707A
公开(公告)日：2014-09-25
申请号：JP2013051064
申请日：2013-03-13
申请人： Toshiba Corp , 株式会社東芝
发明人： WATANABE TAKASHI , MATSUMURA ATSUSHI , KODAMA TOMOYA
IPC分类号： H04N19/00
CPC分类号： H04N19/146 , H04N19/107 , H04N19/124 , H04N19/15 , H04N19/174 , H04N19/436 , H04N19/463 , H04N19/70
摘要： PROBLEM TO BE SOLVED: To suppress degradation of image quality, while preventing collapse of a stream buffer.SOLUTION: A determination unit determines to use the coding mode of a second encoding unit when a predetermined target code amount is exceeded, even if the remaining pixel blocks of a specific range are entirely encoded in a second coding mode, as a result of summation of a cumulative code amount generated until a pixel block encoded immediately before a pixel block to be encoded, and a code amount generated by encoding the pixel block to be encoded in a first coding mode, in a specific unit including one or more pixel block.
摘要翻译：要解决的问题：为了抑制图像质量的劣化，同时防止流缓冲器的崩溃。解决方案：当超过预定目标代码量时，确定单元确定使用第二编码单元的编码模式，即使剩余像素将特定范围的块完全编码为第二编码模式，作为生成直到紧接在要编码的像素块之前编码的像素块的累积代码量和通过将像素块编码生成的代码量与在第一编码模式中，在包括一个或多个像素块的特定单元中进行编码。

3. 发明专利

JP2007201097A Electronic apparatus 审中-公开
标题翻译：电子设备
公开(公告)号：JP2007201097A
公开(公告)日：2007-08-09
申请号：JP2006016669
申请日：2006-01-25
申请人： Toshiba Corp , 株式会社東芝
发明人： WATANABE TAKASHI , TOKAWA WATARU
IPC分类号： H05K5/03 , H01M2/10 , H04M1/02
CPC分类号： Y02E60/12
摘要： PROBLEM TO BE SOLVED: To provide an electronic apparatus in which one detent provided in one cabinet member is engaged with the other detent provided in the other cabinet member to assemble the one cabinet member to the other cabinet member mutually, thereby in advance preventing a decrease of an egaging force caused by fall-down, etc. of the detent or a reduction of a release load caused by a wear, etc. of the detent.
SOLUTION: One cabinet member 3 is provided with a spring member 5S for urging one detent 4p provided in one cabinet member 4 to an engaging direction with the other detent 3p provided in the other cabinet member.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种电子设备，其中设置在一个机柜构件中的一个制动器与设置在另一个机柜构件中的另一个制动器接合以将一个机架构件相互组装成一个机柜构件，从而预先防止由于制动器的跌落等引起的踩踏力的降低或由于制动器的磨损等引起的释放负载的减小。解决方案：一个机柜构件3设置有弹簧构件5S，用于将设置在一个机柜构件4中的一个制动器4p与设置在另一个机架构件中的另一个制动器3p相啮合。版权所有（C）2007，JPO＆INPIT

4. 发明专利

JP2007197838A Sputtering target, and thin film and device using the same 审中-公开
标题翻译：溅射目标，薄膜和使用该薄膜的装置
公开(公告)号：JP2007197838A
公开(公告)日：2007-08-09
申请号：JP2007074644
申请日：2007-03-22
申请人： Toshiba Corp , 株式会社東芝
发明人： ISHIGAMI TAKASHI , FUJIOKA NAOMI , WATANABE TAKASHI , KOSAKA YASUO , SUZUKI YUKINOBU
IPC分类号： C23C14/34 , C22C22/00 , H01L21/28 , H01L21/285
摘要： PROBLEM TO BE SOLVED: To satisfy demand characteristics to a sputtered film which have been made severe more and more, e.g., in accordance with the increase in the performance of various devices in a sputtering target essentially consisting of Mn.
SOLUTION: The content of oxygen in each part of a sputtering target essentially consisting of Mn is controlled to ±20% to the average value of the content of oxygen in the whole of the target. The content of nitrogen in each part of a sputtering target essentially consisting of Mn is controlled to ±40% to the average value of the content of nitrogen in the whole of the target. The content of carbon in each part of a sputtering target essentially consisting of Mn is controlled to ±70% to the average value of the content of carbon in the whole of the target.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了满足越来越多的溅射膜的需求特性，例如根据基本上由Mn组成的溅射靶的各种器件的性能的提高。
解决方案：基本上由Mn组成的溅射靶的每个部分中的氧含量被控制在整个靶中氧含量的平均值的±20％。基本上由Mn组成的溅射靶的每个部分中的氮含量被控制在整个靶中氮含量的平均值的±40％。基本上由Mn组成的溅射靶的每个部分中的碳含量被控制在与整个靶中的碳含量的平均值的±70％。版权所有（C）2007，JPO＆INPIT

5. 发明专利

JP2007073980A Tan film for semiconductor device and semiconductor device using the same 审中-公开
标题翻译：用于半导体器件的薄膜和使用该半导体器件的半导体器件
公开(公告)号：JP2007073980A
公开(公告)日：2007-03-22
申请号：JP2006294256
申请日：2006-10-30
申请人： Toshiba Corp , 株式会社東芝
发明人： SUZUKI YUKINOBU , WATANABE KOICHI , KOSAKA YASUO , WATANABE TAKASHI , FUJIOKA NAOMI , ISHIGAMI TAKASHI
IPC分类号： H01L21/3205 , C23C14/06 , C23C14/34 , H01L21/28 , H01L21/285 , H01L23/52
摘要： PROBLEM TO BE SOLVED: To provide a TaN film for a semiconductor device having an improved in-plane uniformity of thickness of a formed film. SOLUTION: The TaN film for the semiconductor device is a TaN film used as a barrier layer to a wiring film made of Cu or Cu alloy, and is characterized by having 5% or less of the in-plane uniformity of thickness of the formed film. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种具有改善的成膜厚度的面内均匀性的半导体器件的TaN膜。解决方案：用于半导体器件的TaN膜是用作由Cu或Cu合金制成的布线膜的阻挡层的TaN膜，其特征在于，其厚度的面内均匀度为5％以下形成的电影。版权所有（C）2007，JPO＆INPIT

6. 发明专利

JP2006041511A Antiferromagnetic film, exchange-coupling film using the same, magnetoresistance-effect element, and magnetic device 有权
标题翻译：抗静电膜，使用其的交换耦合膜，磁阻效应元件和磁性装置
公开(公告)号：JP2006041511A
公开(公告)日：2006-02-09
申请号：JP2005204355
申请日：2005-07-13
申请人： Toshiba Corp , 株式会社東芝
发明人： YAMANOBE TAKASHI , FUJIOKA NAOMI , ISHIGAMI TAKASHI , KATSUI NOBUO , FUKUYA HIROMI , SAITO KAZUHIRO , IWASAKI HITOSHI , SAHASHI MASASHI , WATANABE TAKASHI
IPC分类号： H01F10/12 , C22C22/00 , G01R33/09 , G11B5/39 , H01F10/32 , H01F41/18 , H01L21/8246 , H01L27/105 , H01L43/08 , H01L43/10 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To stably obtain an adequate exchange-coupling force at room temperature and in a high temperature range by stabilizing the film composition and the film quality of an antiferromagnetic film which is composed of an Mn alloy and is excellent in corrosion resistivity and thermal property.
SOLUTION: The antiferromagnetic film contains Mn of 20 to 95 atomic per cent, while the remainder is substantially at least one of R element selected from among Ni, Pd, Pt, Co, Rh, Ir, V, Nb, Ta, Cu, Ag, Au, Ru, Os, Cr, Mo, W, and Re. The antiferromagnetic film comprises at least one member selected from among an alloy phase and a compound phase formed between the R element and Mn, and is formed by sputtering using a sputtering target in which no single-phase Mn grain having the maximum grain size exceeding 50 μm exists. The divergence of the composition of the antiferromagnetic film from that of the sputtering target is less than 10 atomic per cent. The antiferromagnetic film 3 is laminated with a ferromagnetic film 4 to constitute the exchange-coupling film 2.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了通过稳定由Mn合金构成的反铁磁膜的膜组成和膜质量，在室温和高温范围内稳定地获得适当的交换耦合力，并且在耐腐蚀性和热性能。反铁磁性膜含有20〜95原子％的Mn，余量基本上为选自Ni，Pd，Pt，Co，Rh，Ir，V，Nb，Ta， Cu，Ag，Au，Ru，Os，Cr，Mo，W和Re。反铁磁膜包括选自合金相和形成在R元素和Mn之间的化合物相中的至少一种，并且通过使用不具有超过50的最大粒径的单相Mn晶粒的溅射靶进行溅射而形成存在。反铁磁膜的组成与溅射靶的组成的差异小于10原子％。反铁磁膜3与铁磁膜4层叠以构成交换耦合膜2.版权所有：（C）2006，JPO＆NCIPI

7. 发明专利

JP2005097697A Sputtering target and method for manufacturing the same 审中-公开
标题翻译：溅射目的及其制造方法
公开(公告)号：JP2005097697A
公开(公告)日：2005-04-14
申请号：JP2003334898
申请日：2003-09-26
申请人： Toshiba Corp , 株式会社東芝
发明人： WATANABE TAKASHI , KOMATSU TORU
IPC分类号： B22F3/105 , C22C1/04 , C22C27/04 , C23C14/34
摘要： PROBLEM TO BE SOLVED: To form a sputtering target of an Mo-W alloy system of higher density by sintering at a relatively low temperature and to attain further lower resistance of an alloy film deposited by using the same.
SOLUTION: The sputtering target 2 is composed of an Mo-W-Al material having a composition containing Al ranging from 0.1 to 50mass% and the balance substantially a Mo-W alloy. The Mo-W alloy has the composition containing, for example, W ranging from 0.1 to 70mass% and the balance substantially Mo.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：通过在相对低的温度下烧结来形成更高密度的Mo-W合金体系的溅射靶，并通过使用该方法获得进一步降低的合金膜的电阻。解决方案：溅射靶2由具有0.1至50质量％的Al且余量基本上为Mo-W合金的组成的Mo-W-Al材料组成。 Mo-W合金的组成例如为W为0.1〜70质量％，余量基本上为Mo.PEGYRIGHT：（C）2005，JPO＆NCIPI

8. 发明专利

JP2005060844A Production method for antiferromagnetic film 有权
标题翻译：抗生素膜生产方法
公开(公告)号：JP2005060844A
公开(公告)日：2005-03-10
申请号：JP2004265938
申请日：2004-09-13
申请人： Toshiba Corp , 株式会社東芝
发明人： YAMANOBE TAKASHI , FUJIOKA NAOMI , ISHIGAMI TAKASHI , KATSUI NOBUO , FUKUYA HIROMI , SAITO KAZUHIRO , IWASAKI HITOSHI , SAHASHI MASASHI , WATANABE TAKASHI
IPC分类号： C23C14/34 , G11B5/39 , H01L43/08 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To provide an antiferromagnetic film which is made of a Mn alloy excellent in corrosion resistance and thermal properties, has stable composition and qualities, and can have a stable and sufficient switching connection power at room temperature and also in a high-temperature range.
SOLUTION: The method for producing the antiferromagnetic film comprises a process wherein an R-Mn antiferromagnetic film 3 is formed by using a sputtering target consisting of 10-98 atom% Mn and the balance substantially being at least one R atom selected from among Ni, Pd, Pt, Co, Rh, Ir, V, Nb, Ta, Cu, Ag, Au, Ru, Os, Cr, Mo, W, and Re. The sputtering target has a target structure wherein at least one kind of phase selected from among an alloy phase and a compound phase of the R element and Mn is contained as at least a part of the structure.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了提供由耐腐蚀性和热性能优异的Mn合金制成的反铁磁膜，其组成和质量稳定，并且可以在室温下具有稳定和充分的开关连接功率高温范围。反铁磁膜的制造方法包括使用由10-98原子％的Mn构成的溅射靶，其余基本上为至少一个选自以下的R原子的R-Mn反铁磁膜3 在Ni，Pd，Pt，Co，Rh，Ir，V，Nb，Ta，Cu，Ag，Au，Ru，Os，Cr，Mo，W和Re中。溅射靶具有目标结构，其中至少一种选自合金相和R元素的化合物相和Mn的相作为结构的至少一部分。版权所有（C）2005，JPO＆NCIPI

9. 发明专利

JP2004232016A Component for vacuum film deposition system, and vacuum film deposition system using the same 审中-公开
公开(公告)号：JP2004232016A
公开(公告)日：2004-08-19
申请号：JP2003021653
申请日：2003-01-30
申请人： Toshiba Corp , 株式会社東芝
发明人： WATANABE TAKASHI , NAKAMURA TAKASHI , SATO MICHIO
IPC分类号： C23C14/00 , C23C4/04 , C23C4/06 , C23C16/44
摘要： PROBLEM TO BE SOLVED: To provide a component for a vacuum film deposition system in a vacuum film deposition stage in which the generation of particles caused by the peeling of a deposition film deposited thereon can effectively and securely be prevented, and the intrusion of particles into a film-deposited product is prevented, so that the film-deposited product of high precision such as a highly integrated semiconductor device is produced at a high yield, and the production cost can be reduced, and to provide a vacuum film deposition system using the same.
SOLUTION: In the component composing a vacuum film deposition system, a sprayed coating is formed on the surface of a base material composing the component body, and the surface roughness of the sprayed coating is 30 to 80 μm based on the center line average roughness (Ra).
COPYRIGHT: (C)2004,JPO&NCIPI

10. 发明专利

JP2004217990A Sputtering target, and production method therefor 有权
公开(公告)号：JP2004217990A
公开(公告)日：2004-08-05
申请号：JP2003005964
申请日：2003-01-14
申请人： Toshiba Corp , 株式会社東芝
发明人： WATANABE TAKASHI , KOMATSU TORU
IPC分类号： B22F3/10 , B22F3/15 , C22C1/04 , C22C27/04 , C23C14/34 , H01L21/28 , H01L21/285
摘要： PROBLEM TO BE SOLVED: To suppress the increase in the generation rate of particles caused by joints or the like as for a large-sized sputtering target obtained by joining a plurality of target pieces made of an Mo-W alloy.
SOLUTION: The joined type sputtering target 1 is composed by subjecting a plurality of target pieces 2 made of an Mo-W alloy to solid phase diffusion joining, e.g., by HIP (hot isostatic press) treatment. In the Mo-W alloy composing the target 1, the average crystal grain size in the region in the vicinity of the joining boundary from the joining boundary 4 between the plurality of target pieces 2 to a width of 300 μm is controlled to the range of 3 to 50 μm. Further, the average crystal grain size in whole is controlled to, e.g., ≤200 μm.
COPYRIGHT: (C)2004,JPO&NCIPI

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