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    • 1. 发明专利
    • Magnetic head, magnetic head assembly, and magnetic recording and reproducing device
    • 磁头,磁头组件和磁记录和再现装置
    • JP2014130672A
    • 2014-07-10
    • JP2013234725
    • 2013-11-13
    • Toshiba Corp株式会社東芝
    • SHIMIZU MARIKOKOI KATSUHIKOMURAKAMI SHUICHIYUASA HIROMI
    • G11B5/31
    • PROBLEM TO BE SOLVED: To lower a critical current density for maintaining high frequency magnetic field and starting oscillation of an oscillation layer.SOLUTION: A magnetic head of an embodiment includes a spin torque oscillator arranged between a main magnetic pole and an auxiliary magnetic pole. The spin torque oscillator includes a down-spin injection layer, a first intermediate layer, an oscillation layer, a second intermediate layer, and an up-spin injection layer. The down-spin injection layer includes a first perpendicular magnetization film and a first interface magnetic layer, which are formed on one of the main magnetic pole and the auxiliary magnetic pole. The first interface magnetic layer used in a first embodiment includes: one element being at least one of Fe, Co, and Ni; and at least one element selected from a group consisting of Cr, V, Mn, Ti, and Se. The up-spin injection layer includes a second perpendicular magnetization film.
    • 要解决的问题:降低用于维持高频磁场和振荡层的振荡的临界电流密度。解决方案:实施例的磁头包括布置在主磁极和辅助磁极之间的自旋扭矩振荡器。 自旋扭矩振荡器包括下自旋注入层,第一中间层,振荡层,第二中间层和上旋涂层。 下自旋注入层包括形成在主磁极和辅助磁极之一上的第一垂直磁化膜和第一界面磁性层。 在第一实施例中使用的第一界面磁性层包括:一个元素是Fe,Co和Ni中的至少一个; 以及选自Cr,V,Mn,Ti和Se中的至少一种元素。 上旋涂层包括第二垂直磁化膜。
    • 2. 发明专利
    • Semiconductor device
    • 半导体器件
    • JP2013149926A
    • 2013-08-01
    • JP2012011471
    • 2012-01-23
    • Toshiba Corp株式会社東芝
    • SHIRAI KOJISHIMIZU MARIKO
    • H01L21/329H01L29/06H01L29/861H01L29/866H01L29/868
    • H01L29/0619H01L27/0629H01L29/66106H01L29/7833H01L29/866
    • PROBLEM TO BE SOLVED: To provide a semiconductor device having a small size and capable of preventing variation in a breakdown voltage.SOLUTION: A semiconductor device includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of the first conductivity type provided on the first semiconductor layer; a third semiconductor layer of a second conductivity type provided on the second semiconductor layer so as to be joined to the second semiconductor layer; an element isolation layer surrounding the third semiconductor layer and being deeper than the third semiconductor layer; and a guard ring layer of the second conductivity type provided between the third semiconductor layer and the element isolation layer, being adjacent to the third semiconductor layer, and being deeper than the third semiconductor layer.
    • 要解决的问题:提供一种具有小尺寸并能够防止击穿电压变化的半导体器件。解决方案:一种半导体器件包括:第一导电类型的第一半导体层; 设置在第一半导体层上的第一导电类型的第二半导体层; 第二导电类型的第三半导体层,设置在第二半导体层上以与第二半导体层接合; 围绕所述第三半导体层并且比所述第三半导体层更深的元件隔离层; 以及设置在第三半导体层和元件隔离层之间的与第三半导体层相邻并且比第三半导体层更深的第二导电类型的保护环层。
    • 9. 发明专利
    • Semiconductor device
    • 半导体器件
    • JP2012212842A
    • 2012-11-01
    • JP2011199525
    • 2011-09-13
    • Toshiba Corp株式会社東芝
    • KOMATSU KANAKOMORIOKA JUNSHIRAI KOJITAKAHASHI KEITAYAMADA TASUKUSHIMIZU MARIKO
    • H01L29/78H01L21/336H01L29/06
    • H01L29/7823H01L29/0653H01L29/0692H01L29/0696H01L29/0847H01L29/0886H01L29/1045H01L29/7816H01L29/7835
    • PROBLEM TO BE SOLVED: To provide a semiconductor device with a high breakdown voltage while suppressing an increase in circuit area.SOLUTION: A first semiconductor layer of a first conductivity type extends from an element region in a first direction as a longitudinal direction and is formed to an element termination region, has a first impurity concentration, and functions as a drain region of a MOS transistor. A second semiconductor layer of the first conductivity type extends from the element region in the first direction as the longitudinal direction and is formed to the element termination region, has a second impurity concentration lower than the first impurity concentration, is disposed so as to connect with the first semiconductor layer, and functions as a drift layer of the MOS transistor. The element region and the element termination region has the same width in a second direction orthogonal to the first direction. The width of the second semiconductor layer in the element termination region is wider than that of the second semiconductor layer in the element region, regarding the cross section along the second direction.
    • 要解决的问题:提供具有高击穿电压的半导体器件,同时抑制电路面积的增加。 解决方案:第一导电类型的第一半导体层作为纵向从第一方向的元件区域延伸并且形成为元件端接区域,具有第一杂质浓度,并且用作漏极区域 MOS晶体管。 第一导电类型的第二半导体层作为纵向方向从第一方向的元件区域延伸并且形成为具有低于第一杂质浓度的第二杂质浓度的元件终止区域,以与 第一半导体层,并且用作MOS晶体管的漂移层。 元件区域和元件端接区域在与第一方向正交的第二方向上具有相同的宽度。 关于沿着第二方向的横截面,元件端接区域中的第二半导体层的宽度比元件区域中的第二半导体层的宽度宽。 版权所有(C)2013,JPO&INPIT
    • 10. 发明专利
    • Spin torque oscillator, magnetic recording head, magnetic head assembly, and magnetic recorder
    • 旋转扭矩振荡器,磁记录头,磁头组件和磁记录仪
    • JP2010113764A
    • 2010-05-20
    • JP2008285830
    • 2008-11-06
    • Toshiba Corp株式会社東芝
    • KOI KATSUHIKOSHIMIZU MARIKOYAMADA KENICHIRO
    • G11B5/31G11B5/02
    • G11B5/314G11B5/02G11B5/1278G11B2005/0002G11B2005/0024
    • PROBLEM TO BE SOLVED: To provide: a spin torque oscillator capable of making stabilized oscillation with a small current density and a high in-plane RF magnetic field strength; a magnetic recording head; a magnetic head assembly; and a magnetic recorder.
      SOLUTION: The spin torque oscillator has a magnetic film made of a magnetic substance of a body-centered cubic structure arranging its {110} plane almost parallel with the principal plane, a first magnetic layer whose magnetic moment turning around the axis almost perpendicular to the principal plane, a second magnetic layer made of a magnetic substance, and a first non-magnetic layer made of a non-magnetic material and stacked between the first and second magnetic layers. Further, a magnetic field is applied in the direction substantially perpendicular to the principal plane, and a current is fed in the direction perpendicular to the principal plane.
      COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:提供:能够以小的电流密度和高的面内RF磁场强度进行稳定振荡的自旋转矩振荡器; 磁记录头; 磁头组件; 和磁记录器。 解决方案:旋转扭矩振荡器具有由体心立方结构的磁性物质制成的磁膜,其布置其主体平面的ä110}平面,第一磁性层,其磁矩围绕轴线几乎垂直 由主要平面构成的第二磁性层和由非磁性材料构成的层叠在第一和第二磁性层之间的第一非磁性层。 此外,在基本上垂直于主平面的方向上施加磁场,并且在垂直于主平面的方向上馈送电流。 版权所有(C)2010,JPO&INPIT