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1. 发明授权

US6030450A Method of fabricating a silicon single crystal 失效
标题翻译：制造硅单晶的方法
公开(公告)号：US6030450A
公开(公告)日：2000-02-29
申请号：US998609
申请日：1997-12-29
申请人： Toshiaki Saishouji , Takashi Yokoyama , Hirotaka Nakajima , Toshimichi Kubota , Kouzou Nakamura
发明人： Toshiaki Saishouji , Takashi Yokoyama , Hirotaka Nakajima , Toshimichi Kubota , Kouzou Nakamura
IPC分类号： C30B15/20 , C30B15/00 , C30B29/06 , H01L21/208
CPC分类号： C30B29/06 , C30B15/206
摘要： The cooling speed of the portion near the rear part of a single-crystal body and passing through the defect-forming temperature zone is kept the same as that of the front portion of the single-crystal body. Namely, the heater is kept in operation while pulling the single crystal silicon subsequent to forming the tail of the single crystal silicon and the cooling speed throughout the whole single-crystal body in the defect-forming temperature zone is kept below 15.degree. C./min (levels A and B). Furthermore, the length of the tail is preset in the process of pulling the single crystal silicon so that the single-crystal body cools down slowly while passing through the defect-forming temperature zone (level C). In addition, the temperature of the portion near the rear part of the single-crystal body under pulling is below the minimum temperature of the defect-forming temperature zone by shortening the distance between melted liquid surface and the portion passing through the defect-forming temperature zone of the single-crystal, and by increasing the temperature gradient along the single-crystal axis (level D).
摘要翻译：单晶体的后部附近的部分的冷却速度与通过缺陷形成温度区域的冷却速度保持与单晶体的前部相同。即，加热器在形成单晶硅的尾部之后拉动单晶硅时保持运行，并且在缺陷形成温度区域中的整个单晶体的冷却速度保持在15℃以下/ min（A级和B级）。此外，在拉动单晶硅的过程中预设尾部的长度，使得单晶体在通过缺陷形成温度区（C级）时缓慢冷却。此外，单体拉伸后部附近的部分的温度通过缩短熔融液面与通过缺陷形成温度的部分之间的距离而低于缺陷形成温度区域的最低温度并且通过增加沿单晶轴的温度梯度（D级）。

2. 发明授权

US5968260A Method for fabricating a single-crystal semiconductor 失效
标题翻译：制造单晶半导体的方法
公开(公告)号：US5968260A
公开(公告)日：1999-10-19
申请号：US829412
申请日：1997-03-31
申请人： Toshiaki Saishouji , Tetsuhiro Iida , Kouzou Nakamura , Toshimichi Kubota , Junsuke Tomioka
发明人： Toshiaki Saishouji , Tetsuhiro Iida , Kouzou Nakamura , Toshimichi Kubota , Junsuke Tomioka
IPC分类号： C30B15/20 , C30B15/00 , C30B15/22 , C30B29/06 , H01L21/208
CPC分类号： C30B29/06 , C30B15/206 , C30B15/22
摘要： A method for fabricating a single-crystal semiconductor by means of CZ method is disclosed. The method separates the single-crystal semiconductor from the melt by increasing the lift rate when the growth of a crystal body is finished. By controlling the lift rate, the single-crystal semiconductor is then gradually cooled within a range of an arbitrary crystal temperature, thereby forming a concave separated surface. The single-crystal semiconductor is cooled at a rate of lower than 35.degree. C./min when the temperature of the separated surface is within a range between the melting point and 1000.degree. C., or by keeping the temperature of the separated surface within a range between 1250.degree. C. and 1000.degree. C. for more than 30 minutes. Therefore, no dislocation is introduced in the crystal body, and productivity is improved.
摘要翻译：公开了一种通过CZ方法制造单晶半导体的方法。该方法通过在结晶体的生长结束时提高提升速率将单晶半导体与熔体分离。通过控制提升速度，然后在任意晶体温度的范围内逐渐冷却单晶半导体，从而形成凹分离表面。当分离的表面的温度在熔点和1000℃之间的范围内时，或者通过将分离的表面的温度保持在1000℃以内，单晶半导体以低于35℃/分钟的速率被冷却在1250℃和1000℃之间的范围内超过30分钟。因此，在晶体中不引入位错，提高生产率。

3. 发明授权

US5968262A Method of fabricating silicon single crystals 失效
标题翻译：硅单晶的制造方法
公开(公告)号：US5968262A
公开(公告)日：1999-10-19
申请号：US976340
申请日：1997-11-21
申请人： Toshiaki Saishouji , Kouzou Nakamura , Toshimichi Kubota , Junsuke Tomioka
发明人： Toshiaki Saishouji , Kouzou Nakamura , Toshimichi Kubota , Junsuke Tomioka
IPC分类号： C30B15/00 , C30B29/06 , H01L21/208 , C30B15/20
CPC分类号： C30B29/06 , C30B15/203 , C30B15/206
摘要： When the pulling speed is V(mm/min), the temperature gradient along the crystal axis within the temperature range from the melting point of silicon to 1300.degree. C. is G1 (.degree. C./mm), the temperature gradient along the crystal axis within the temperature range from 1150.degree. to 1080.degree. C. is G2 (.degree. C./mm), and the octahedral-shaped void density is d (pieces/cm.sup.3), crystals are grown under a condition satisfying:V/G1>0.581.times.V.times.G2-(d-4.3.times.10.sup.3)/2.65.times.10.sup.6 and V/G1>0.25.In this way, the defect density is reduced to less than 1.times.106 pieces/cm.sup.3 and silicon single crystals having superior gate oxide integrity and semiconductor device yield are obtained.
摘要翻译：当拉拔速度为V（mm / min）时，在从硅熔点到1300℃的温度范围内沿着晶轴的温度梯度为G1（℃/ mm），沿着晶体的温度梯度在1150°至1080℃的温度范围内的轴为G2（℃/ mm），八面体形空隙密度为d（个/ cm 3），晶体在满足V / G1> 0.581xVxG2-（d-4.3×103）/2.65×106和V / G1> 0.25。以这种方式，将缺陷密度降低到小于1×10 6个/ cm 3，获得具有优异的栅极氧化物完整性和半导体器件产率的硅单晶。

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