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1. 发明授权

US5763838A Apparatus for weighing a grown crystal 失效
标题翻译：用于称量生长晶体的装置
公开(公告)号：US5763838A
公开(公告)日：1998-06-09
申请号：US737412
申请日：1996-11-23
申请人： Toshiaki Morimura , Yoshitaka Noguchi , Satoshi Oka
发明人： Toshiaki Morimura , Yoshitaka Noguchi , Satoshi Oka
IPC分类号： C30B15/28 , G01G19/00 , G01N5/00 , H01L21/66 , C30B23/00
CPC分类号： G01G19/00 , C30B15/28 , Y10S367/908
摘要： The disclosed apparatus weighs a grown crystal that is being pulled from melt thereof. The lower end of a rope of known weight is connected to the crystal, while the upper end of the rope is connected to the drum of a rope-winding unit. The rope-winding unit includes a driver coupled to the drum so as to rotate the drum and wind the rope thereon, and the weight of the rope-winding unit including the drum and driver is known. At least one weight sensor is coupled to the rope-winding unit so as to measure the magnitude of gravity acting on the rope-winding unit. Whereby, the weight of the grown crystal is determined by subtracting the sum of the known weights of the rope and the rope-winding unit from the measured magnitude of the gravity acting on the rope-winding unit.
摘要翻译： PCT No.PCT / JP96 / 00632 Sec。 371日期：1996年10月23日 102（e）1996年10月23日PCT 1996年3月14日PCT公布。出版物WO96 / 30729 PCT 日期1996年10月3日公开的装置称重从其熔融物中拉出的生长晶体。已知重量的绳索的下端连接到晶体，而绳索的上端连接到绳索卷绕单元的滚筒。绳索卷绕单元包括联接到滚筒以驱动滚筒并将绳索卷绕在其上的驱动器，并且包括滚筒和驱动器的绳索卷绕单元的重量是已知的。至少一个重量传感器耦合到绳索卷绕单元，以便测量作用在绳索卷绕单元上的重力的大小。由此，通过从测量的作用在绳索卷绕单元上的重量的大小减去绳索和绳索卷绕单元的已知重量的总和来确定生长的晶体的重量。

2. 发明申请

US20130102126A1 METHOD FOR MANUFACTURING BONDED WAFER 审中-公开
标题翻译：制造粘结波的方法
公开(公告)号：US20130102126A1
公开(公告)日：2013-04-25
申请号：US13699118
申请日：2011-04-21
申请人： Hiroji Aga , Satoshi Oka , Nobuhiko Noto
发明人： Hiroji Aga , Satoshi Oka , Nobuhiko Noto
IPC分类号： H01L21/265
CPC分类号： H01L21/265 , H01L21/302 , H01L21/3065 , H01L21/3247 , H01L21/76254
摘要： A method for manufacturing a bonded wafer including: forming an ion-implanted layer in a bond wafer, bonding the bond wafer to a base wafer, delaminating the bond wafer at the ion-implanted layer, and performing a flattening heat treatment on a surface after delamination, in which a silicon single crystal wafer is used as the bond wafer where the region to form the ion-implanted layer has a resistivity of 0.2 Ωcm or less, the ion-implanted layer is formed where the ion dose for forming the layer is 4×1016/cm2 or less, and the flattening heat treatment is performed in an atmosphere including HCl gas. Therefore, a method for manufacturing a bonded wafer having a low resistivity thin film (SOI layer) that contains dopant, such as boron, with high concentration according to the ion-implantation delamination method, where outward diffusion of dopant and suction due to oxidation can be inhibited to maintain low resistivity.
摘要翻译：一种用于制造接合晶片的方法，包括：在接合晶片中形成离子注入层，将接合晶片接合到基底晶片，在离子注入层分层接合晶片，以及在表面之后进行平坦化热处理分层，其中使用硅单晶晶片作为形成离子注入层的区域的电阻率为0.2Ω·米或更小的接合晶片，形成离子注入层，其中用于形成层的离子剂量为 4×10 16 / cm 2以下，扁平化热处理在含有HCl气体的气氛中进行。因此，根据离子注入脱层法，具有含有高掺杂剂等硼等掺杂剂的低电阻薄膜（SOI层）的接合晶片的制造方法，其中掺杂剂的向外扩散和由于氧化引起的抽吸可以被抑制以维持低电阻率。

3. 发明授权

US6139625A Method for producing a silicon single crystal wafer and a silicon single crystal wafer 有权
标题翻译：硅单晶晶片和硅单晶晶片的制造方法
公开(公告)号：US6139625A
公开(公告)日：2000-10-31
申请号：US264099
申请日：1999-03-08
申请人： Masaro Tamatsuka , Norihiro Kobayashi , Satoshi Oka
发明人： Masaro Tamatsuka , Norihiro Kobayashi , Satoshi Oka
IPC分类号： C30B15/00 , C30B33/00 , C30B15/04
CPC分类号： C30B29/06 , C30B15/206 , C30B33/00
摘要： There is disclosed a method of producing a silicon single crystal wafer wherein a silicon single crystal ingot in which nitrogen is doped is grown by Czochralski method, the single crystal ingot is sliced to yield a silicon single crystal wafer, and then the silicon single crystal wafer is subjected to heat treatment with a rapid heating/rapid cooling apparatus, and the silicon single crystal wafer produced by the method. There can be provided a method for producing a silicon single crystal wherein growth of crystal defects (grown-in defects) in silicon single crystal produced by CZ method are suppressed, particularly growth of crystal defects are prevented in the surface layer of the wafer, and crystal defect can be surely removed by a short time heat treatment even if small crystal defects are generated.
摘要翻译：公开了通过Czochralski法生长其中掺杂有氮的硅单晶锭的硅单晶晶片的制造方法，将单晶锭切片以产生硅单晶晶片，然后将硅单晶晶片通过快速加热/快速冷却装置和通过该方法制造的硅单晶晶片进行热处理。可以提供一种制造硅单晶的方法，其中抑制了通过CZ法制造的硅单晶中的晶体缺陷（生长缺陷）的生长，特别是在晶片的表面层中防止了晶体缺陷的生长，即使产生小的晶体缺陷，也可以通过短时间的热处理来确定地去除晶体缺陷。

4. 发明授权

US08497187B2 Method for manufacturing SOI wafer and SOI wafer 有权
标题翻译：制造SOI晶圆和SOI晶圆的方法
公开(公告)号：US08497187B2
公开(公告)日：2013-07-30
申请号：US13055829
申请日：2009-07-29
申请人： Satoshi Oka , Susumu Kuwabara
发明人： Satoshi Oka , Susumu Kuwabara
IPC分类号： H01L21/30
CPC分类号： H01L21/76254 , H01L21/02381 , H01L21/02532 , H01L21/0262
摘要： According to the present invention, there is provided a method for manufacturing an SOI wafer, the method configured to grow an epitaxial layer on an SOI layer of the SOI wafer having the SOI layer on a BOX layer to increase a thickness of the SOI layer, wherein epitaxial growth is carried out by using an SOI wafer whose infrared reflectance in an infrared wavelength range of 800 to 1300 nm falls within the range of 20% to 40% as the SOI wafer on which the epitaxial layer is grown. As a result, a high-quality SOI wafer with less slip dislocation and others can be provided with excellent productivity at a low cost as the SOI wafer including the SOI layer having a thickness increased by growing the epitaxial layer, and a manufacturing method thereof can be also provide.
摘要翻译：根据本发明，提供一种制造SOI晶片的方法，该方法被配置为在BOX层上具有SOI层的SOI晶片的SOI层上生长外延层，以增加SOI层的厚度，其中通过使用在800nm至1300nm的红外波长范围内的红外反射率在其外延层生长的SOI晶片的20％至40％的范围内的SOI晶片来进行外延生长。结果，具有较小滑移位错的高品质SOI晶片等可以以低成本提供优异的生产率，因为包括通过生长外延层而增加厚度的SOI层的SOI晶片及其制造方法可以也提供。

5. 发明授权

US08389382B2 Method for manufacturing bonded wafer 有权
标题翻译：贴合晶圆的制造方法
公开(公告)号：US08389382B2
公开(公告)日：2013-03-05
申请号：US13130681
申请日：2009-10-15
申请人： Satoshi Oka , Nobuhiko Noto
发明人： Satoshi Oka , Nobuhiko Noto
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/76254
摘要： A method for manufacturing a bonded wafer including the steps of: implanting at least one gas ion of a hydrogen ion and a rare gas ion into a bond wafer from a surface thereof to form an ion-implanted layer; bonding the ion-implanted surface of the bond wafer to a surface of a base wafer directly or through an oxide film; thereafter delaminating the bond wafer at the ion-implanted layer to prepare the bonded wafer having a silicon thin film formed on the base wafer; and performing a flattening heat treatment on the bonded wafer under an atmosphere containing hydrogen or hydrogen chloride, wherein a dopant gas is added into the atmosphere of the flattening heat treatment to perform the heat treatment, the dopant gas having the same conductivity type as a dopant contained in the silicon thin film.
摘要翻译：一种用于制造接合晶片的方法，包括以下步骤：从其表面将至少一种氢离子和稀有气体离子的气体离子注入接合晶片以形成离子注入层; 将接合晶片的离子注入表面直接或通过氧化膜键合到基底晶片的表面; 然后在离子注入层分层接合晶片，以制备在基底晶片上形成有硅薄膜的接合晶片; 在包含氢或氯化氢的气氛下，在接合晶片上进行平坦化的热处理，其中在平坦化热处理的气氛中加入掺杂气体进行热处理，掺杂气体具有与掺杂剂相同的导电类型包含在硅薄膜中。

6. 发明申请

US20120326268A1 SILICON EPITAXIAL WAFER, METHOD FOR MANUFACTURING THE SAME, BONDED SOI WAFER AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：硅外延晶片，其制造方法，结合SOI晶片及其制造方法
公开(公告)号：US20120326268A1
公开(公告)日：2012-12-27
申请号：US13582614
申请日：2011-03-01
申请人： Masahiro Kato , Satoshi Oka , Norihiro Kobayashi , Tohru Ishizuka , Nobuhiko Noto
发明人： Masahiro Kato , Satoshi Oka , Norihiro Kobayashi , Tohru Ishizuka , Nobuhiko Noto
IPC分类号： H01L29/06 , H01L21/20 , H01L21/762 , H01L29/02
CPC分类号： H01L21/02381 , H01L21/02433 , H01L21/02532 , H01L21/02576 , H01L21/0262 , H01L21/76254 , H01L29/78603
摘要： A silicon epitaxial wafer having a silicon epitaxial layer grown by vapor phase epitaxy on a main surface of a silicon single crystal substrate, wherein the main surface of the silicon single crystal substrate is tilted with respect to a [100] axis at an angle θ in a [011] direction or a [0-1-1] direction from a (100) plane and at an angle Φ in a [01-1] direction or a [0-11] direction from the (100) plane, the angle θ and the angle Φ are less than ten minutes, and a dopant concentration of the silicon epitaxial layer is equal to or more than 1×1019/cm3. Even when an epitaxial layer having a dopant concentration of 1×1019/cm3 or more is formed on the main surface of the silicon single crystal substrate, stripe-shaped surface irregularities on the epitaxial layer are inhibited.
摘要翻译：一种硅外延片，其具有在硅单晶衬底的主表面上通过气相外延生长的硅外延层，其中所述硅单晶衬底的主表面相对于[100]轴以角度倾斜; 在（100）面的[011]方向或[0-1-1]方向上，在（100）面的[01-1]方向或[0-11]方向上的角度Φ处，角度和角度角度Φ小于10分钟，硅外延层的掺杂剂浓度为1×1019 / cm3以上。即使在硅单晶衬底的主表面上形成掺杂浓度为1×1019 / cm3以上的外延层，也抑制了外延层上的条状表面凹凸。

7. 发明申请

US20090258474A1 Method for producing SOl substrate 有权
标题翻译：生产SO1底物的方法
公开(公告)号：US20090258474A1
公开(公告)日：2009-10-15
申请号：US12379938
申请日：2009-03-04
申请人： Satoshi Oka , Nobuhiko Noto
发明人： Satoshi Oka , Nobuhiko Noto
IPC分类号： H01L21/762 , H01L21/302
CPC分类号： H01L21/76254 , H01L21/3065
摘要： Provided is a method for producing an SOI substrate having a thick-film SOI layer, in which an ion-implanted layer is formed by implanting at least one kind of ion of hydrogen ion and a rare gas ion into a surface of a bond wafer, an SOI substrate having an SOI layer is produced by, after the ion-implanted surface of the bond wafer and a surface of a base wafer are bonded together via an oxide film, delaminating the bond wafer along the ion-implanted layer, heat treatment is performed on the SOI substrate having the SOI layer in a reducing atmosphere containing hydrogen or an atmosphere containing hydrogen chloride gas, and, after the surface of the SOI layer is polished by CMP, a silicon epitaxial layer is grown on the SOI layer of the SOI substrate.
摘要翻译：提供一种制造具有厚膜SOI层的SOI衬底的方法，其中通过将至少一种氢离子和稀有气体离子的离子注入到接合晶片的表面中形成离子注入层，通过在接合晶片的离子注入表面和基底晶片的表面经由氧化物膜接合在一起之后，沿着离子注入层使接合晶片分层，制造具有SOI层的SOI衬底，热处理为在含有氢或含有氯化氢气体的气氛的还原气氛中在具有SOI层的SOI衬底上进行SOI SOI层的SOI表面的SOI外延生长后，在SOI的SOI层上生长硅外延层基质。

8. 发明授权

US5759426A Heat treatment jig for semiconductor wafers and a method for treating a surface of the same 失效
标题翻译：用于半导体晶片的热处理夹具及其表面处理方法
公开(公告)号：US5759426A
公开(公告)日：1998-06-02
申请号：US558540
申请日：1995-11-16
申请人： Norihiro Kobayashi , Kazuo Mamada , Yuichi Matsumoto , Satoshi Oka , Masatake Katayama
发明人： Norihiro Kobayashi , Kazuo Mamada , Yuichi Matsumoto , Satoshi Oka , Masatake Katayama
IPC分类号： H01L21/22 , H01L21/31 , H01L21/673 , H01L21/302
CPC分类号： C04B41/87 , C04B41/5066 , C04B41/52 , C04B41/89 , C30B35/00
摘要： A silicon nitride layer 12b is thermally grown on the topmost surface of the heat treatment jig 12 composed of silicon or silicon carbide in a nitrogen ambience. The silicon nitride layer 12b is thermally grown in a nitrogen ambience in the temperature range of 1,100.degree. C.-1,300.degree. C. It is desirable to remove slightly the surface of the jig by, for example, hydrogen etching before thermally growing the silicon nitride layer 12b. After the etching, a silicon oxide layer can be thermally grown on the jig surface in an oxygen ambience before thermally growing the silicon nitride layer 12b.
摘要翻译：氮化硅层12b在氮气氛中由硅或碳化硅构成的热处理夹具12的最上表面热生长。氮化硅层12b在1100℃-1300℃的温度范围内在氮气气氛中热生长。期望通过例如在将氮化硅热生长之前的氢蚀刻稍微去除夹具的表面层12b。在蚀刻之后，在氧化氮化物层12b热生长之前，可以在氧气氛中在夹具表面上热生长氧化硅层。

9. 发明授权

US08691665B2 Method for producing bonded wafer 有权
标题翻译：接合晶片的制造方法
公开(公告)号：US08691665B2
公开(公告)日：2014-04-08
申请号：US13514414
申请日：2010-11-18
申请人： Satoshi Oka , Hiroji Aga , Masahiro Kato , Nobuhiko Noto
发明人： Satoshi Oka , Hiroji Aga , Masahiro Kato , Nobuhiko Noto
IPC分类号： H01L21/30 , H01L21/46 , H01L21/00
CPC分类号： H01L21/3247 , H01L21/302 , H01L21/3065 , H01L21/76254
摘要： The present invention is directed to a method for producing a bonded wafer, the method in which heat treatment for flattening the surface of a thin film is performed on a bonded wafer made by the ion implantation delamination method in an atmosphere containing hydrogen or hydrogen chloride, wherein the surface of a susceptor on which the bonded wafer is to be placed, the susceptor used at the time of flattening heat treatment, is coated with a silicon film in advance. As a result, a method for producing a bonded wafer is provided, the method by which a bonded wafer having a thin film with good film thickness uniformity can be obtained even when heat treatment for flattening the surface of a thin film of a bonded wafer after delamination is performed in the ion implantation delamination method.
摘要翻译：本发明涉及一种接合晶片的制造方法，其特征在于，在含有氢或氯化氢的气氛中，对由离子注入脱层法制成的接合晶片进行使薄膜表面平坦化的热处理，其中预先在其上放置接合晶片的基座的表面，在平坦化热处理时使用的基座被涂覆有硅膜。结果，提供了一种接合晶片的制造方法，即使在将粘合晶片的薄膜的表面平坦化的热处理后，也可以获得具有良好的膜厚均匀性的薄膜的接合晶片的方法在离子注入分层方法中进行分层。

10. 发明授权

US07838388B2 Method for producing SOI substrate 有权
标题翻译： SOI衬底的制造方法
公开(公告)号：US07838388B2
公开(公告)日：2010-11-23
申请号：US12379938
申请日：2009-03-04
申请人： Satoshi Oka , Nobuhiko Noto
发明人： Satoshi Oka , Nobuhiko Noto
IPC分类号： H01L21/76
CPC分类号： H01L21/76254 , H01L21/3065
摘要： Provided is a method for producing an SOI substrate having a thick-film SOI layer, in which an ion-implanted layer is formed by implanting at least one kind of ion of hydrogen ion and a rare gas ion into a surface of a bond wafer, an SOI substrate having an SOI layer is produced by, after the ion-implanted surface of the bond wafer and a surface of a base wafer are bonded together via an oxide film, delaminating the bond wafer along the ion-implanted layer, heat treatment is performed on the SOI substrate having the SOI layer in a reducing atmosphere containing hydrogen or an atmosphere containing hydrogen chloride gas, and, after the surface of the SOI layer is polished by CMP, a silicon epitaxial layer is grown on the SOI layer of the SOI substrate.
摘要翻译：提供一种制造具有厚膜SOI层的SOI衬底的方法，其中通过将至少一种氢离子和稀有气体离子的离子注入到接合晶片的表面中形成离子注入层，通过在接合晶片的离子注入表面和基底晶片的表面经由氧化物膜接合在一起之后，沿着离子注入层使接合晶片分层，制造具有SOI层的SOI衬底，热处理为在含有氢或含有氯化氢气体的气氛的还原气氛中在具有SOI层的SOI衬底上进行SOI SOI层的SOI表面的SOI外延生长后，在SOI的SOI层上生长硅外延层基质。

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