专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5082750A Magnetic recording medium of thin metal film type 失效
标题翻译：薄金属薄膜型磁记录介质
公开(公告)号：US5082750A
公开(公告)日：1992-01-21
申请号：US424500
申请日：1989-10-20
申请人： Toshiaki Morichika , Toshio Tani , Chiaki Sakai , Hideo Koshimoto , Tatsuhiko Kadowaki
发明人： Toshiaki Morichika , Toshio Tani , Chiaki Sakai , Hideo Koshimoto , Tatsuhiko Kadowaki
IPC分类号： G11B5/64
CPC分类号： G11B5/656 , Y10S428/90 , Y10S428/928 , Y10T428/12465 , Y10T428/12854 , Y10T428/12931
摘要： A magnetic recording medium having excellent noise characteristics and comprising a metal magnetic film formed on a nonmagnetic substrate and made of (1) a Co-Cr-Nb alloy, or (2) a Co-Cr-Ni-Nb alloy. The alloys (1) and (2) are represented respectively by the following formulae:Co.sub.1-x-z Cr.sub.x Nb.sub.z (1)Co.sub.1-x-y-z Cr.sub.x Ni.sub.y Nb.sub.z (2)wherein x, y and z each represent an atomic ratio, x is 0.08 to 0.15, y is 0.05 to 0.25 and z is 0.03 to 0.10.
摘要翻译：具有优异的噪声特性的磁记录介质，包括形成在非磁性基底上的金属磁性膜，由（1）Co-Cr-Nb合金或（2）Co-Cr-Ni-Nb合金制成。合金（1）和（2）分别由下式表示：Co1-x-zCrxNbz（1）Co1-xy-zCrxNiyNbz（2）其中x，y和z各自表示原子比，x为0.08至0.15 y为0.05〜0.25，z为0.03〜0.10。

2. 发明申请

US20100184246A1 METHOD FOR MANUFACTURING SOLID-STATE IMAGE PICK-UP DEVICE 有权
标题翻译：制造固态图像拍摄装置的方法
公开(公告)号：US20100184246A1
公开(公告)日：2010-07-22
申请号：US12686021
申请日：2010-01-12
申请人： Chiaki Sakai
发明人： Chiaki Sakai
IPC分类号： H01L31/18
CPC分类号： H01L21/76254 , H01L21/265 , H01L21/26506 , H01L27/14632 , H01L27/1464 , H01L27/14683 , H01L27/14689 , H01L2221/68363
摘要： There is provided a method for manufacturing a solid-state image device which includes the steps of: forming a silicon epitaxial growth layer on a silicon substrate; forming photoelectric conversion portions, transfer gates, and a peripheral circuit portion in and/or on the silicon epitaxial growth layer and further forming a wiring layer on the silicon epitaxial growth layer; forming a split layer in the silicon substrate at a side of the silicon epitaxial growth layer; forming a support substrate on the wiring layer; peeling the silicon substrate from the split layer so as to leave a silicon layer formed of a part of the silicon substrate at a side of the support substrate; and planarizing the surface of the silicon layer.
摘要翻译：提供了一种用于制造固态图像器件的方法，其包括以下步骤：在硅衬底上形成硅外延生长层; 在硅外延生长层中和/或内部形成光电转换部分，转移栅极和外围电路部分，并进一步在硅外延生长层上形成布线层; 在所述硅衬底中在所述硅外延生长层的一侧上形成分裂层; 在所述布线层上形成支撑基板; 从分离层剥离硅衬底，以便在支撑衬底的一侧留下由硅衬底的一部分形成的硅层; 并且平坦化硅层的表面。

3. 发明申请

US20080128848A1 SOLID-STATE IMAGING DEVICE 有权
标题翻译：固态成像装置
公开(公告)号：US20080128848A1
公开(公告)日：2008-06-05
申请号：US11944831
申请日：2007-11-26
申请人： Masami Suzuki , Yoshimichi Harada , Yoshihiro Nabe , Yuji Takaoka , Masaaki Takizawa , Chiaki Sakai
发明人： Masami Suzuki , Yoshimichi Harada , Yoshihiro Nabe , Yuji Takaoka , Masaaki Takizawa , Chiaki Sakai
IPC分类号： H01L31/0224
CPC分类号： H01L27/14618 , H01L23/481 , H01L24/02 , H01L27/14636 , H01L27/14683 , H01L2224/0401 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/05042
摘要： A solid-state imaging device includes a semiconductor substrate having a foreside provided with an imaging area and an electrode pad, the imaging area having an array of optical sensors, the electrode pad being disposed around a periphery of the imaging area; a transparent substrate joined to the foreside of the semiconductor substrate with a sealant therebetween; underside wiring that extends through the semiconductor substrate from the electrode pad to an underside of the semiconductor substrate; and a protective film composed of an inorganic insulating material and interposed between the semiconductor substrate and the sealant, the protective film covering at least the electrode pad.
摘要翻译：固态成像装置包括具有成像区域的前侧的半导体基板和电极焊盘，所述成像区域具有光学传感器阵列，所述电极焊盘围绕所述摄像区域的周边设置; 透明基板，其与半导体基板的前端接合，在其间具有密封剂; 从所述电极焊盘延伸穿过所述半导体衬底到所述半导体衬底的下侧的下侧布线; 以及保护膜，其由无机绝缘材料构成并插入在所述半导体基板和所述密封剂之间，所述保护膜至少覆盖所述电极焊盘。

4. 发明授权

US08383446B2 Manufracturing method of solid-state imaging device 有权
$Manufracturing method of solid-state imaging device$
标题翻译：固态成像装置的制造方法
公开(公告)号：US08383446B2
公开(公告)日：2013-02-26
申请号：US13586345
申请日：2012-08-15
申请人： Chiaki Sakai
发明人： Chiaki Sakai
IPC分类号： H01L31/14
CPC分类号： H04N5/369 , H01L27/1464 , H01L27/14698
摘要： A solid-state imaging device includes: a photoelectric conversion portion that receives an incident light from a back surface side of a silicon layer to perform photoelectric conversion on the incident light; and a pixel transistor portion that outputs signal charges generated in the photoelectric conversion portion towards a front surface side of the silicon layer, wherein a gettering layer having internal stress is provided on the front surface side of the silicon layer at a position to overlap the photoelectric conversion portion on a plan view layout thereof.
摘要翻译：一种固态成像装置，包括：光电转换部，其从硅层的背面侧接收入射光，对入射光进行光电转换; 以及像素晶体管部分，其在所述光电转换部分中产生的信号电荷朝向所述硅层的前表面侧输出，其中在所述硅层的前表面侧上与所述硅层的重叠的位置处设置具有内应力的吸杂层转换部分。

5. 发明授权

US08294185B2 Solid-state imaging device 有权
标题翻译：固态成像装置
公开(公告)号：US08294185B2
公开(公告)日：2012-10-23
申请号：US12658714
申请日：2010-02-12
申请人： Chiaki Sakai
发明人： Chiaki Sakai
IPC分类号： H01L21/8238
CPC分类号： H04N5/369 , H01L27/1464 , H01L27/14698
摘要： A solid-state imaging device includes: a photoelectric conversion portion that receives an incident light from a back surface side of a silicon layer to perform photoelectric conversion on the incident light; and a pixel transistor portion that outputs signal charges generated in the photoelectric conversion portion towards a front surface side of the silicon layer, wherein a gettering layer having internal stress is provided on the front surface side of the silicon layer at a position to overlap the photoelectric conversion portion on a plan view layout thereof.
摘要翻译：一种固态成像装置，包括：光电转换部，其从硅层的背面侧接收入射光，对入射光进行光电转换; 以及像素晶体管部分，其在所述光电转换部分中产生的信号电荷朝向所述硅层的前表面侧输出，其中在所述硅层的前表面侧上与所述硅层的重叠的位置处设置具有内应力的吸杂层转换部分。

6. 发明授权

US5162892A Semiconductor device with polycrystalline silicon active region and hydrogenated passivation layer 失效
标题翻译：具有多晶硅有源区和氢化钝化层的半导体器件
公开(公告)号：US5162892A
公开(公告)日：1992-11-10
申请号：US703057
申请日：1991-05-17
申请人： Hisao Hayashi , Hisayoshi Yamoto , Chiaki Sakai
发明人： Hisao Hayashi , Hisayoshi Yamoto , Chiaki Sakai
IPC分类号： H01L21/30 , H01L21/318 , H01L21/84 , H01L23/29 , H01L27/06 , H01L29/04 , H01L29/786
CPC分类号： H01L23/291 , H01L21/3003 , H01L21/3185 , H01L21/84 , H01L27/0688 , H01L29/04 , H01L29/78675 , H01L2924/0002 , H01L2924/13091
摘要： A thin film semiconductor device with a polycrystalline silicon film forming an active channel region, a source region and a drain region, is encapsulated in a passivation layer which also serves as a source of free hydrogen. Migration of hydrogen into the active region improves the effective carrier mobility, the threshold voltage and the gate voltage of the device by reducing carrier trap density thereof. The passivation layer is activated during annealing to drive hydrogen through porous or transmissive layers of the device to the active region. Effective mobilities of up to 100 cm.sup.2 /V sec can be achieved in the preferred construction. The semicondcutor device can be fabricated in the form of IC chips.
摘要翻译：具有形成有源沟道区，源极区和漏极区的多晶硅膜的薄膜半导体器件被封装在还用作游离氢源的钝化层中。通过降低其载流子阱密度，氢向有源区的迁移改善了器件的有效载流子迁移率，阈值电压和栅极电压。钝化层在退火过程中被激活，以将氢气通过器件的多孔或透射层驱动到有源区。在优选的结构中可达到高达100cm2 / V秒的有效迁移率。半切割器件可以以IC芯片的形式制造。

7. 发明申请

US20120322193A1 SOLID-STATE IMAGING DEVICE 有权
标题翻译：固态成像装置
公开(公告)号：US20120322193A1
公开(公告)日：2012-12-20
申请号：US13586345
申请日：2012-08-15
申请人： Chiaki Sakai
发明人： Chiaki Sakai
IPC分类号： H01L31/18
CPC分类号： H04N5/369 , H01L27/1464 , H01L27/14698
摘要： A solid-state imaging device includes: a photoelectric conversion portion that receives an incident light from a back surface side of a silicon layer to perform photoelectric conversion on the incident light; and a pixel transistor portion that outputs signal charges generated in the photoelectric conversion portion towards a front surface side of the silicon layer, wherein a gettering layer having internal stress is provided on the front surface side of the silicon layer at a position to overlap the photoelectric conversion portion on a plan view layout thereof.
摘要翻译：一种固态成像装置，包括：光电转换部，其从硅层的背面侧接收入射光，对入射光进行光电转换; 以及像素晶体管部分，其在所述光电转换部分中产生的信号电荷朝向所述硅层的前表面侧输出，其中在所述硅层的前表面侧上与所述硅层的重叠的位置处设置具有内应力的吸杂层转换部分。

8. 发明申请

US20110136295A1 METHOD FOR MANUFACTURING SOLID-STATE IMAGE PICKUP-DEVICE 有权
标题翻译：制造固态图像拾取器件的方法
公开(公告)号：US20110136295A1
公开(公告)日：2011-06-09
申请号：US13029320
申请日：2011-02-17
申请人： Chiaki Sakai
发明人： Chiaki Sakai
IPC分类号： H01L31/18
CPC分类号： H01L21/76254 , H01L21/265 , H01L21/26506 , H01L27/14632 , H01L27/1464 , H01L27/14683 , H01L27/14689 , H01L2221/68363
摘要： A method for manufacturing a solid-state image device which includes the steps of: forming a silicon epitaxial growth layer on a silicon substrate; forming photoelectric conversion portions, transfer gates, and a peripheral circuit portion in and/or on the silicon epitaxial growth layer and further forming a wiring layer on the silicon epitaxial growth layer; forming a split layer in the silicon substrate at a side of the silicon epitaxial growth layer; forming a support substrate on the wiring layer; peeling the silicon substrate from the split layer so as to leave a silicon layer formed of a part of the silicon substrate at a side of the support substrate; and planarizing the surface of the silicon layer.
摘要翻译：一种制造固态图像器件的方法，包括以下步骤：在硅衬底上形成硅外延生长层; 在硅外延生长层中和/或内部形成光电转换部分，转移栅极和外围电路部分，并进一步在硅外延生长层上形成布线层; 在所述硅衬底中在所述硅外延生长层的一侧上形成分裂层; 在所述布线层上形成支撑基板; 从分离层剥离硅衬底，以便在支撑衬底的一侧留下由硅衬底的一部分形成的硅层; 并且平坦化硅层的表面。

9. 发明授权

US07897427B2 Method for manufacturing solid-state image pick-up device 有权
标题翻译：固态摄像装置的制造方法
公开(公告)号：US07897427B2
公开(公告)日：2011-03-01
申请号：US12686021
申请日：2010-01-12
申请人： Chiaki Sakai
发明人： Chiaki Sakai
IPC分类号： H01L21/00
CPC分类号： H01L21/76254 , H01L21/265 , H01L21/26506 , H01L27/14632 , H01L27/1464 , H01L27/14683 , H01L27/14689 , H01L2221/68363
摘要： There is provided a method for manufacturing a solid-state image device which includes the steps of: forming a silicon epitaxial growth layer on a silicon substrate; forming photoelectric conversion portions, transfer gates, and a peripheral circuit portion in and/or on the silicon epitaxial growth layer and further forming a wiring layer on the silicon epitaxial growth layer; forming a split layer in the silicon substrate at a side of the silicon epitaxial growth layer; forming a support substrate on the wiring layer; peeling the silicon substrate from the split layer so as to leave a silicon layer formed of a part of the silicon substrate at a side of the support substrate; and planarizing the surface of the silicon layer.
摘要翻译：提供了一种用于制造固态图像器件的方法，其包括以下步骤：在硅衬底上形成硅外延生长层; 在硅外延生长层中和/或内部形成光电转换部分，转移栅极和外围电路部分，并进一步在硅外延生长层上形成布线层; 在所述硅衬底中在所述硅外延生长层的一侧上形成分裂层; 在所述布线层上形成支撑基板; 从分离层剥离硅衬底，以便在支撑衬底的一侧留下由硅衬底的一部分形成的硅层; 并且平坦化硅层的表面。

10. 发明授权

US08524574B2 Method for manufacturing solid-state image pickup-device 有权
标题翻译：固态摄像装置的制造方法
公开(公告)号：US08524574B2
公开(公告)日：2013-09-03
申请号：US13029320
申请日：2011-02-17
申请人： Chiaki Sakai
发明人： Chiaki Sakai
IPC分类号： H01L21/00
CPC分类号： H01L21/76254 , H01L21/265 , H01L21/26506 , H01L27/14632 , H01L27/1464 , H01L27/14683 , H01L27/14689 , H01L2221/68363
摘要： A method for manufacturing a solid-state image device which includes the steps of: forming a silicon epitaxial growth layer on a silicon substrate; forming photoelectric conversion portions, transfer gates, and a peripheral circuit portion in and/or on the silicon epitaxial growth layer and further forming a wiring layer on the silicon epitaxial growth layer; forming a split layer in the silicon substrate at a side of the silicon epitaxial growth layer; forming a support substrate on the wiring layer; peeling the silicon substrate from the split layer so as to leave a silicon layer formed of a part of the silicon substrate at a side of the support substrate; and planarizing the surface of the silicon layer.
摘要翻译：一种制造固态图像器件的方法，包括以下步骤：在硅衬底上形成硅外延生长层; 在硅外延生长层中和/或内部形成光电转换部分，转移栅极和外围电路部分，并进一步在硅外延生长层上形成布线层; 在所述硅衬底中在所述硅外延生长层的一侧上形成分裂层; 在所述布线层上形成支撑基板; 从分离层剥离硅衬底，以便在支撑衬底的一侧留下由硅衬底的一部分形成的硅层; 并且平坦化硅层的表面。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式