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    • 1. 发明授权
    • Semiconductor laser element
    • 半导体激光元件
    • US06535536B2
    • 2003-03-18
    • US09828888
    • 2001-04-10
    • Toshiaki FukunagaKenji MatsumotoMitsugu Wada
    • Toshiaki FukunagaKenji MatsumotoMitsugu Wada
    • H01S500
    • H01S5/32341H01S5/0421H01S5/2004H01S5/321H01S5/3215H01S5/3216
    • A semiconductor laser element capable of reducing an element resistance and producing a beam of high quality includes: an n-Ga1−Z4AlZ4N composition gradient layer provided between an n-GaN contact layer and an n-Ga1−Z1AlZ1N/GaN superlattice clad layer; an n-Ga1−Z5AlZ5N composition gradient layer provided between the n-Ga1−Z1AlZ1N/GaN superlattice clad layer and an n- or i-Ga1−Z2AlZ2N optical waveguide layer; a p-Ga1−Z5AlZ5N composition gradient layer provided between a p- or i-Ga1−Z2AlZ2N optical waveguide layer and a p-Ga1−Z1AlZ1N superlattice gradient layer; and a p-Ga1−Z4AlZ4N composition gradient layer provided between a p-Ga1−Z1AlZ1N/GaN superlattice upper clad layer and a p-GaN contact layer. Z4 of the n-Ga1−Z4AlZ4N composition gradient layer is continuously changed from 0 to a composition corresponding to the band gap of the Ga1−Z1AlZ1N/GaN superlattice clad layer. Z5 in the Ga1−Z5AlZ5N composition gradient layer is continuously changed from z2 to a composition corresponding to the band gap of the Ga1−Z1AlZ1N/GaN superlattice clad layer.
    • 能够降低元件电阻并产生高质量的光束的半导体激光元件包括:n-Ga 1 -Z 4 AlZ 4 N组成梯度层,其设置在n-GaN接触层和n-Ga1-Z1AlZ1N / GaN超晶格覆盖层之间; 设置在n-Ga1-Z1AlZ1N / GaN超晶格覆盖层与n或i-Ga1-Z2AlZ2N光波导层之间的n-Ga1-Z5AlZ5N组成梯度层; 设置在p或i-Ga1-Z2AlZ2N光波导层和p-Ga1-Z1AlZ1N超晶格梯度层之间的p-Ga1-Z5AlZ5N组成梯度层; 以及设置在p-Ga1-Z1AlZ1N / GaN超晶格上覆层和p-GaN接触层之间的p-Ga1-Z4AlZ4N组成梯度层。 n-Ga1-Z4AlZ4N组成梯度层的Z4从0连续变化为与Ga1-Z1AlZ1N / GaN超晶格覆盖层的带隙对应的组成。 Ga1-Z5AlZ5N组成梯度层中的Z5从z2连续变化为与Ga1-Z1AlZ1N / GaN超晶格覆盖层的带隙对应的组成。
    • 5. 发明授权
    • Semiconductor laser
    • 半导体激光器
    • US6028874A
    • 2000-02-22
    • US877958
    • 1997-06-17
    • Mitsugu WadaToshiaki Fukunaga
    • Mitsugu WadaToshiaki Fukunaga
    • H01S5/34H01S5/343H01S3/19
    • B82Y20/00H01S5/34313H01S2304/04H01S5/3406H01S5/3407
    • A III-V group semiconductor laser includes a first clad layer, a first optical waveguide layer, a first barrier layer, an active layer, a second barrier layer, a second optical waveguide layer and a second clad layer formed in this order on a GaAs substrate which is a III-V group compound semiconductor. Each of the first and second clad layers and the first and second optical waveguide layers is of a composition which matches with the GaAs substrate in lattice. The active layer is of a composition which induces compressive strain on the GaAs substrate. Each of the first and second barrier layers is of a composition which induces tensile strain on the GaAs substrate, thereby compensating for the compressive strain induced in the active layer. The ratio of V group elements contained in the first optical waveguide layer is the same as that in the first barrier layer, and the ratio of V group elements contained in the second optical waveguide layer is the same as that in the second barrier layer.
    • III-V族半导体激光器包括在GaAs上依次形成的第一覆盖层,第一光波导层,第一势垒层,有源层,第二势垒层,第二光波导层和第二覆盖层 作为III-V族化合物半导体的基板。 第一和第二包覆层以及第一和第二光波导层中的每一个具有与GaAs衬底相同的组成。 有源层是在GaAs衬底上引起压应变的组成。 第一和第二阻挡层中的每一个都是在GaAs衬底上引起拉伸应变的组成,从而补偿在有源层中感应的压缩应变。 包含在第一光波导层中的V族元素的比例与第一阻挡层中的V族元素的比率相同,并且第二光波导层中包含的V族元素的比例与第二阻挡层中的相同。
    • 7. 发明授权
    • Semiconductor laser
    • 半导体激光器
    • US06285695B1
    • 2001-09-04
    • US09246946
    • 1999-02-09
    • Hideki AsanoMitsugu WadaToshiaki Fukunaga
    • Hideki AsanoMitsugu WadaToshiaki Fukunaga
    • H01S500
    • B82Y20/00H01S5/2004H01S5/34H01S5/3403H01S5/3406H01S5/343H01S5/34313
    • A semiconductor laser includes a first clad layer having one of p-type conductivity and n-type conductivity, a first optical waveguide layer, a first barrier layer of GaAs1-y2Py2, a quantum-well active layer of Inx3Ga1-x3As1-y3Py3, a second barrier layer of GaAs1-y2Py2, a second optical waveguide layer and a second clad layer having the of p-type conductivity and n-type conductivity formed in this order on a GaAs substrate. Each of the first and second clad layers is of a composition which matches with the GaAs substrate in lattice. Each of the first and second optical waveguide layers is of a InGaAsP composition which matches with the GaAs substrate in lattice. Each of the first and second barrier layers is 10 to 30 nm in thickness and is of a composition which has tensile strain relative to the GaAs substrate, the product of the tensile strain and the thickness of each of the first and second barrier layers being 5 to 20% nm. The quantum-well active layer is 6 to 10 nm in thickness and is of a composition which has compressive strain of not smaller than 1.0% relative to the GaAs substrate. The sum of the product of the tensile strain and the thickness of the first barrier layer and that of the second barrier layer is larger than the product of the compressive strain and the thickness of the quantum-well active layer.
    • 半导体激光器包括具有p型导电性和n型导电性中的一种的第一覆盖层,第一光波导层,GaAs1-y2Py2的第一势垒层,In x3Ga1-x3As1-y3Py3的量子阱有源层, GaAs1-y2Py2的第二阻挡层,在GaAs衬底上依次形成具有p型导电性和n型导电性的第二光波导层和第二覆盖层。 第一和第二包覆层中的每一个具有与GaAs衬底相匹配的组成。 第一和第二光波导层中的每一个都是与GaAs衬底匹配的InGaAsP组成。 第一和第二阻挡层中的每一个的厚度为10至30nm,并且具有相对于GaAs衬底的拉伸应变的组成,第一和第二阻挡层中的每一个的拉伸应变和厚度的乘积为5 至20%nm。 量子阱有源层的厚度为6〜10nm,相对于GaAs衬底具有不小于1.0%的压缩应变的组成。 第一阻挡层和第二阻挡层的拉伸应变和厚度的乘积的总和大于量子阱活性层的压缩应变和厚度的乘积。