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1. 发明授权

US06876688B1 Semiconductor laser and method of manufacturing the same 失效
标题翻译：半导体激光器及其制造方法
公开(公告)号：US06876688B1
公开(公告)日：2005-04-05
申请号：US09315068
申请日：1999-05-20
申请人： Toshiro Hayakawa , Toshiaki Fukunaga , Mitsugu Wada
发明人： Toshiro Hayakawa , Toshiaki Fukunaga , Mitsugu Wada
IPC分类号： H01S5/00 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/32 , H01S5/323 , H01S5/34 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/20 , H01S5/2004 , H01S5/22 , H01S5/2214 , H01S5/2231 , H01S5/3213 , H01S5/32333 , H01S5/3407 , H01S5/343 , H01S5/3434 , H01S5/3436
摘要： A semiconductor laser has an active region which includes at least a quantum well layer and upper and lower optical waveguide layers and is of InxGa1−xAsyP1−y (0≦x≦1, 0≦y≦1). Upper and lower AlGaAs cladding layers are formed on opposite sides of the active region. At least one of the optical waveguide layers is not smaller than 0.25 μm in thickness, and a part of the upper cladding layer on the upper optical waveguide layer is selectively removed up to the interface of the upper cladding layer and the upper optical waveguide layer.
摘要翻译：半导体激光器具有至少包括量子阱层和上下光波导层并且为In x Ga 1-x As y P 1-y（0≤x≤1,0<= y <1）的有源区。上，下AlGaAs覆层形成在有源区的相对侧上。至少一个光波导层的厚度不小于0.25μm，并且上光波导层上的上包层的一部分被选择性地去除到上包层和上光波导层的界面。

2. 发明授权

US06625190B1 Semiconductor laser device having thickened impurity-doped aluminum-free optical waveguide layers 失效
标题翻译：具有增厚杂质掺杂的无铝光波导层的半导体激光器件
公开(公告)号：US06625190B1
公开(公告)日：2003-09-23
申请号：US09648807
申请日：2000-08-28
申请人： Toshiro Hayakawa , Toshiaki Fukunaga , Mitsugu Wada
发明人： Toshiro Hayakawa , Toshiaki Fukunaga , Mitsugu Wada
IPC分类号： H01S319
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/204 , H01S5/34353 , H01S5/3436 , H01S5/34386
摘要： In a semiconductor laser device including an active region which is made of an aluminum-free material and a plurality of cladding layers made of at least one AlGaAs or AlGaInP material, the active region includes a quantum well layer and at least one optical waveguide layer; a portion of the at least one optical waveguide layer located on one side of the quantum well layer has a thickness of 0.25 &mgr;m or more; and the at least one optical waveguide layer, other than a portion of the at least one optical waveguide layer being located near the quantum well layer and having a thickness of at least 10 nm, is doped with impurity of 1017 cm−3 or more.
摘要翻译：在包括由无铝材料制成的有源区和由至少一种AlGaAs或AlGaInP材料制成的多个覆层的半导体激光器件中，有源区包括量子阱层和至少一个光波导层; 位于量子阱层的一侧的至少一个光波导层的一部分具有0.25μm以上的厚度; 并且所述至少一个光波导层，除了所述至少一个光波导层的位于所述量子阱层附近并且具有至少10nm的厚度的部分之外，掺杂有10 17 cm -1的杂质， 3>以上。

3. 发明授权

US06797416B2 GaN substrate formed under controlled growth condition over GaN layer having discretely formed pits 有权
标题翻译：在具有离散形成的凹坑的GaN层上的受控生长条件下形成GaN衬底
公开(公告)号：US06797416B2
公开(公告)日：2004-09-28
申请号：US10391564
申请日：2003-03-20
申请人： Mitsugu Wada , Toshiaki Kuniyasu , Toshiaki Fukunaga
发明人： Mitsugu Wada , Toshiaki Kuniyasu , Toshiaki Fukunaga
IPC分类号： B32B900
CPC分类号： C30B25/02 , C30B25/04 , C30B25/18 , C30B29/406 , H01L21/0237 , H01L21/02458 , H01L21/02494 , H01L21/02502 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01S5/0213 , H01S5/0422 , H01S5/22 , H01S5/3202 , H01S5/32341 , H01S2301/173 , H01S2304/04 , H01S2304/12 , Y10T428/12528 , Y10T428/24273
摘要： In a process for producing a substrate for use in a semiconductor element: a first GaN layer having a plurality of pits at its upper surface is formed; and then a second GaN layer is formed by growing a GaN crystal over the first GaN layer until the upper surface of the second GaN layer becomes flattened. Each of the above plurality of pits has an opening area of 0.005 to 100 &mgr;m2 and a depth of 0.1 to 10.0 &mgr;m.
摘要翻译：在制造用于半导体元件的衬底的工艺中，形成在其上表面具有多个凹坑的第一GaN层; 然后通过在第一GaN层上生长GaN晶体直到第二GaN层的上表面变平为止形成第二GaN层。上述多个凹坑的开口面积为0.005〜100μm，深度为0.1〜10.0μm。

4. 发明授权

US06285695B1 Semiconductor laser 有权
标题翻译：半导体激光器
公开(公告)号：US06285695B1
公开(公告)日：2001-09-04
申请号：US09246946
申请日：1999-02-09
申请人： Hideki Asano , Mitsugu Wada , Toshiaki Fukunaga
发明人： Hideki Asano , Mitsugu Wada , Toshiaki Fukunaga
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/2004 , H01S5/34 , H01S5/3403 , H01S5/3406 , H01S5/343 , H01S5/34313
摘要： A semiconductor laser includes a first clad layer having one of p-type conductivity and n-type conductivity, a first optical waveguide layer, a first barrier layer of GaAs1-y2Py2, a quantum-well active layer of Inx3Ga1-x3As1-y3Py3, a second barrier layer of GaAs1-y2Py2, a second optical waveguide layer and a second clad layer having the of p-type conductivity and n-type conductivity formed in this order on a GaAs substrate. Each of the first and second clad layers is of a composition which matches with the GaAs substrate in lattice. Each of the first and second optical waveguide layers is of a InGaAsP composition which matches with the GaAs substrate in lattice. Each of the first and second barrier layers is 10 to 30 nm in thickness and is of a composition which has tensile strain relative to the GaAs substrate, the product of the tensile strain and the thickness of each of the first and second barrier layers being 5 to 20% nm. The quantum-well active layer is 6 to 10 nm in thickness and is of a composition which has compressive strain of not smaller than 1.0% relative to the GaAs substrate. The sum of the product of the tensile strain and the thickness of the first barrier layer and that of the second barrier layer is larger than the product of the compressive strain and the thickness of the quantum-well active layer.
摘要翻译：半导体激光器包括具有p型导电性和n型导电性中的一种的第一覆盖层，第一光波导层，GaAs1-y2Py2的第一势垒层，In x3Ga1-x3As1-y3Py3的量子阱有源层， GaAs1-y2Py2的第二阻挡层，在GaAs衬底上依次形成具有p型导电性和n型导电性的第二光波导层和第二覆盖层。第一和第二包覆层中的每一个具有与GaAs衬底相匹配的组成。第一和第二光波导层中的每一个都是与GaAs衬底匹配的InGaAsP组成。第一和第二阻挡层中的每一个的厚度为10至30nm，并且具有相对于GaAs衬底的拉伸应变的组成，第一和第二阻挡层中的每一个的拉伸应变和厚度的乘积为5 至20％nm。量子阱有源层的厚度为6〜10nm，相对于GaAs衬底具有不小于1.0％的压缩应变的组成。第一阻挡层和第二阻挡层的拉伸应变和厚度的乘积的总和大于量子阱活性层的压缩应变和厚度的乘积。

5. 发明授权

US06535536B2 Semiconductor laser element 有权
标题翻译：半导体激光元件
公开(公告)号：US06535536B2
公开(公告)日：2003-03-18
申请号：US09828888
申请日：2001-04-10
申请人： Toshiaki Fukunaga , Kenji Matsumoto , Mitsugu Wada
发明人： Toshiaki Fukunaga , Kenji Matsumoto , Mitsugu Wada
IPC分类号： H01S500
CPC分类号： H01S5/32341 , H01S5/0421 , H01S5/2004 , H01S5/321 , H01S5/3215 , H01S5/3216
摘要： A semiconductor laser element capable of reducing an element resistance and producing a beam of high quality includes: an n-Ga1−Z4AlZ4N composition gradient layer provided between an n-GaN contact layer and an n-Ga1−Z1AlZ1N/GaN superlattice clad layer; an n-Ga1−Z5AlZ5N composition gradient layer provided between the n-Ga1−Z1AlZ1N/GaN superlattice clad layer and an n- or i-Ga1−Z2AlZ2N optical waveguide layer; a p-Ga1−Z5AlZ5N composition gradient layer provided between a p- or i-Ga1−Z2AlZ2N optical waveguide layer and a p-Ga1−Z1AlZ1N superlattice gradient layer; and a p-Ga1−Z4AlZ4N composition gradient layer provided between a p-Ga1−Z1AlZ1N/GaN superlattice upper clad layer and a p-GaN contact layer. Z4 of the n-Ga1−Z4AlZ4N composition gradient layer is continuously changed from 0 to a composition corresponding to the band gap of the Ga1−Z1AlZ1N/GaN superlattice clad layer. Z5 in the Ga1−Z5AlZ5N composition gradient layer is continuously changed from z2 to a composition corresponding to the band gap of the Ga1−Z1AlZ1N/GaN superlattice clad layer.
摘要翻译：能够降低元件电阻并产生高质量的光束的半导体激光元件包括：n-Ga 1 -Z 4 AlZ 4 N组成梯度层，其设置在n-GaN接触层和n-Ga1-Z1AlZ1N / GaN超晶格覆盖层之间; 设置在n-Ga1-Z1AlZ1N / GaN超晶格覆盖层与n或i-Ga1-Z2AlZ2N光波导层之间的n-Ga1-Z5AlZ5N组成梯度层; 设置在p或i-Ga1-Z2AlZ2N光波导层和p-Ga1-Z1AlZ1N超晶格梯度层之间的p-Ga1-Z5AlZ5N组成梯度层; 以及设置在p-Ga1-Z1AlZ1N / GaN超晶格上覆层和p-GaN接触层之间的p-Ga1-Z4AlZ4N组成梯度层。 n-Ga1-Z4AlZ4N组成梯度层的Z4从0连续变化为与Ga1-Z1AlZ1N / GaN超晶格覆盖层的带隙对应的组成。 Ga1-Z5AlZ5N组成梯度层中的Z5从z2连续变化为与Ga1-Z1AlZ1N / GaN超晶格覆盖层的带隙对应的组成。

6. 发明授权

US06516016B1 High-power semiconductor laser device having current confinement structure and index-guided structure, and oscillating in transverse mode 有权
标题翻译：具有电流限制结构和折射率引导结构的大功率半导体激光器件，并以横向振荡
公开(公告)号：US06516016B1
公开(公告)日：2003-02-04
申请号：US09715192
申请日：2000-11-20
申请人： Toshiaki Fukunaga , Mitsugu Wada
发明人： Toshiaki Fukunaga , Mitsugu Wada
IPC分类号： H01S500
CPC分类号： H01S5/2231 , H01S5/2206 , H01S5/222 , H01S5/3201 , H01S5/32391
摘要： In a semiconductor laser device: a lower cladding layer; a lower optical waveguide layer; a compressive strain quantum well active layer made of Inx3Ga1−x3As1−y3Py3, where 0
摘要翻译：在半导体激光装置中：下包层; 下部光波导层; 由In x3Ga1-x3As1-y3Py3制成的压应变量子阱有源层，其中0

7. 发明授权

US06709513B2 Substrate including wide low-defect region for use in semiconductor element 有权
标题翻译：基板包括用于半导体元件的宽低缺陷区域
公开(公告)号：US06709513B2
公开(公告)日：2004-03-23
申请号：US10188038
申请日：2002-07-03
申请人： Toshiaki Fukunaga , Toshiaki Kuniyasu , Mitsugu Wada , Yoshinori Hotta
发明人： Toshiaki Fukunaga , Toshiaki Kuniyasu , Mitsugu Wada , Yoshinori Hotta
IPC分类号： C30B2504
CPC分类号： C30B25/02 , C30B25/18 , C30B29/406 , H01L21/0237 , H01L21/02378 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02639 , H01L21/0265
摘要： In a process for producing a substrate for use in a semiconductor element: a porous anodic alumina film having a great number of minute pores is formed on a surface of a base substrate; the surface of the base substrate is etched by using the porous anodic alumina film as a mask so as to form a great number of pits on the surface of the base substrate; the porous anodic alumina film is removed; and a GaN layer is formed on the surface of the base substrate by crystal growth.
摘要翻译：在半导体元件用基板的制造方法中，在基板的表面上形成具有大量微小孔的多孔阳极氧化铝膜，通过使用多孔阳极氧化铝膜作为掩模蚀刻基底基板的表面，以在基底表面上形成大量凹坑; 去除多孔阳极氧化铝膜; 并且通过晶体生长在基板的表面上形成GaN层。

8. 发明授权

US06400743B1 High-power semiconductor laser device having current confinement structure and index-guided structure 失效
标题翻译：具有电流限制结构和折射率引导结构的大功率半导体激光器件
公开(公告)号：US06400743B1
公开(公告)日：2002-06-04
申请号：US09634703
申请日：2000-08-07
申请人： Toshiaki Fukunaga , Mitsugu Wada
发明人： Toshiaki Fukunaga , Mitsugu Wada
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/0655 , H01S5/209 , H01S5/2231 , H01S5/3403 , H01S5/3434
摘要： In a semiconductor laser device: an n-type lower cladding layer; a lower optical waveguide layer; a compressive strain quantum well active layer made of Inx3Ga1-x3As1-y3Py3, where 0
摘要翻译：在半导体激光器件中：n型下包层; 下部光波导层; 由Inx3Ga1-x3As1-y3Py3制成的压应变量子阱有源层，其中0

9. 发明授权

US06127691A Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US06127691A
公开(公告)日：2000-10-03
申请号：US199815
申请日：1998-11-25
申请人： Toshiaki Fukunaga , Mitsugu Wada
发明人： Toshiaki Fukunaga , Mitsugu Wada
IPC分类号： H01S5/00 , H01S5/323 , H01S5/343 , H01L33/00
CPC分类号： B82Y20/00 , H01S5/343 , H01S5/34313 , H01S5/2009 , H01S5/32333 , H01S5/3403
摘要： A semiconductor laser device comprises a GaAs substrate, a first cladding layer having either one of p-type electrical conductivity and n-type electrical conductivity, a first optical waveguide layer, an In.sub.x2 Ga.sub.1-x2 As.sub.1-y2 P.sub.y2 first barrier layer, an In.sub.x3 Ga.sub.1-x3 As.sub.1-y3 P.sub.y3 quantum well active layer, an In.sub.x2 Ga.sub.1-x2 As.sub.1-y2 P.sub.y2 second barrier layer, a second optical waveguide layer, and a second cladding layer having the other electrical conductivity, the layers being overlaid in this order on the substrate. Each cladding layer and each optical waveguide layer have compositions, which are lattice matched with the substrate. Each of the first and second barrier layers has a tensile strain with respect to the substrate and is set such that a total layer thickness of the barrier layers may be 10 nm to 30 nm, and a product of a strain quantity of the tensile strain and the total layer thickness may be 0.05 nm to 0.2 nm. The active layer has a composition, which is lattice matched with the substrate, or a composition, which has a tensile strain of at most 0.003 with respect to the substrate.
摘要翻译：半导体激光器件包括GaAs衬底，具有p型导电性和n型导电性中的任一种的第一覆盖层，第一光波导层，Inx2Ga1-x2As1-y2Py2第一阻挡层，Inx3Ga1-x3As1- y3Py3量子阱有源层，Inx2Ga1-x2As1-y2Py2第二阻挡层，第二光波导层和具有另一导电性的第二覆层，这些层依次叠置在基板上。每个包覆层和每个光波导层具有与衬底晶格匹配的组成。第一和第二阻挡层中的每一个相对于基板具有拉伸应变，并且被设置为使得阻挡层的总层厚度可以为10nm至30nm，并且拉伸应变的应变量和总层厚度可以为0.05nm至0.2nm。活性层具有与基材晶格匹配的组成或相对于基材具有至多0.003的拉伸应变的组合物。

10. 发明授权

US06973109B2 Semiconductor laser device having strain buffer layer between compressive-strain quantum well layer and tensile-strain barrier layer 有权
标题翻译：半导体激光器件在压应变量子阱层和拉伸应变阻挡层之间具有应变缓冲层
公开(公告)号：US06973109B2
公开(公告)日：2005-12-06
申请号：US09794618
申请日：2001-02-28
申请人： Toshiaki Fukunaga , Mitsugu Wada
发明人： Toshiaki Fukunaga , Mitsugu Wada
IPC分类号： H01S5/22 , H01S5/223 , H01S5/34 , H01S5/343 , H01S5/00
CPC分类号： B82Y20/00 , H01S5/22 , H01S5/2231 , H01S5/34 , H01S5/3406 , H01S5/3434 , H01S5/34373
摘要： A semiconductor laser device having an active region including alternating layers of at least one quantum well layer and a plurality of barrier layers, where two of the plurality of barrier layers are the outermost layers of the alternating layers. Each of the at least one quantum well layer has a compressive strain, and each of the plurality of barrier layers has a tensile strain. In the active region, a strain buffer layer having an intermediate strain is formed between each quantum well layer and each of two barrier layers adjacent to the quantum well layer. Interfacial strain is thus reduced, improving high-output-power characteristics.
摘要翻译：一种半导体激光器件，其具有包括至少一个量子阱层和多个势垒层的交替层的有源区，其中多个阻挡层中的两个是交替层的最外层。所述至少一个量子阱层中的每一个具有压缩应变，并且所述多个阻挡层中的每一个具有拉伸应变。在有源区域中，在每个量子阱层与与量子阱层相邻的两个势垒层中的每一个之间形成具有中间应变的应变缓冲层。因此，界面应变减小，提高了高输出功率特性。

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