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1. 发明申请

US20060028606A1 Liquid crystal display and method of manufacturing the same 有权
标题翻译：液晶显示器及其制造方法
公开(公告)号：US20060028606A1
公开(公告)日：2006-02-09
申请号：US11187238
申请日：2005-07-22
申请人： Toru Takeguchi , Takeshi Kubota
发明人： Toru Takeguchi , Takeshi Kubota
IPC分类号： G02F1/1345 , G02F1/136
CPC分类号： G02F1/13454 , G02F1/13452 , G02F2001/136295 , H01L27/124
摘要： A method of manufacturing a liquid crystal display holding a liquid crystal layer between a picture element substrate on which a pixel electrode driven by a thin film transistor is formed and a opposed counter substrate and forming a terminal to an external driving circuit on the picture element substrate, includes forming a semiconductor layer on the substrate, forming a gate insulating film on the semiconductor layer, forming a gate electrode on the gate insulating film, forming a source-drain region in the semiconductor layer, forming a source-drain wire on the substrate, forming a terminal wire on the substrate, forming insulating inorganic films on regions of the terminal wire on the external driving circuit and a display area sides, forming an organic resin film on the insulating inorganic film, and formingaconductive filmontheterminal wire. The conductive film has a predetermined distance to the organic resin film.
摘要翻译：一种在形成有由薄膜晶体管驱动的像素电极的像素基板和相对的对置基板之间形成液晶层的液晶显示器的制造方法，并且在像素基板上形成端子到外部驱动电路包括在所述基板上形成半导体层，在所述半导体层上形成栅极绝缘膜，在所述栅极绝缘膜上形成栅极电极，在所述半导体层中形成源极 - 漏极区域，在所述基板上形成源极 - 漏极导线在基板上形成端子线，在外部驱动电路上的端子线的区域上形成绝缘性无机膜，在绝缘性无机膜上形成有机树脂膜的显示区域侧，以及形成导电性膜导电线。导电膜与有机树脂膜具有预定的距离。

2. 发明授权

US06794759B2 Semiconductor device, liquid crystal display device and method of manufacturing the semiconductor device 有权
标题翻译：半导体装置，液晶显示装置及半导体装置的制造方法
公开(公告)号：US06794759B2
公开(公告)日：2004-09-21
申请号：US10342312
申请日：2003-01-15
申请人： Takeshi Kubota , Toru Takeguchi , Nobuhiro Nakamura
发明人： Takeshi Kubota , Toru Takeguchi , Nobuhiro Nakamura
IPC分类号： H01L2348
CPC分类号： H01L21/76838 , H01L27/124
摘要： A terminal interconnection 45a including an aluminum alloy film 4a and a nitrogen-containing aluminum film 5a layered together is formed on a glass substrate 2. Nitrogen-containing aluminum film 5a in a contact portion 12a within a contact hole 11a exposing the surface of terminal interconnection 45a has a predetermined thickness d1 determined based on a specific resistance of the nitrogen-containing aluminum film. The thickness of the nitrogen-containing aluminum film outside the contact portion is larger than that of the nitrogen-containing aluminum film within the contact portion. Thereby, a semiconductor device or a liquid crystal display device having a reduced contact resistance and an appropriate resistance against chemical liquid is achieved.
摘要翻译：在玻璃基板2上形成包括层合在一起的铝合金膜4a和含氮铝膜5a的端子互连件45a。在露出端子互连表面的接触孔11a内的接触部分12a中的含氮铝膜5a 45a具有基于含氮铝膜的电阻率确定的预定厚度d1。接触部外侧的含氮铝膜的厚度大于接触部内的含氮铝膜的厚度。由此，实现了具有降低的接触电阻和对化学液体的适当电阻的半导体器件或液晶显示器件。

3. 发明授权

US06534349B1 Method of manufacturing a semiconductor device having a two-layered electrode structure 有权
标题翻译：具有双层电极结构的半导体器件的制造方法
公开(公告)号：US06534349B1
公开(公告)日：2003-03-18
申请号：US09592277
申请日：2000-06-12
申请人： Takeshi Kubota , Toru Takeguchi , Nobuhiro Nakamura
发明人： Takeshi Kubota , Toru Takeguchi , Nobuhiro Nakamura
IPC分类号： H01L2128
CPC分类号： H01L21/76838 , H01L27/124
摘要： A terminal interconnection 45a including an aluminum alloy film 4a and a nitrogen-containing aluminum film 5a layered together is formed on a glass substrate 2. Nitrogen-containing aluminum film 5a in a contact portion 12a within a contact hole 11a exposing the surface of terminal interconnection 45a has a predetermined thickness d1 determined based on a specific resistance of the nitrogen-containing aluminum film. The thickness of the nitrogen-containing aluminum film outside the contact portion is larger than that of the nitrogen-containing aluminum film within the contact portion. Thereby, a semiconductor device or a liquid crystal display device having a reduced contact resistance and an appropriate resistance against chemical liquid is achieved.
摘要翻译：在玻璃基板2上形成包括层合在一起的铝合金膜4a和含氮铝膜5a的端子互连件45a。在露出端子互连表面的接触孔11a内的接触部分12a中的含氮铝膜5a 45a具有基于含氮铝膜的电阻率确定的预定厚度d1。接触部外侧的含氮铝膜的厚度大于接触部内的含氮铝膜的厚度。由此，实现了具有降低的接触电阻和对化学液体的适当电阻的半导体器件或液晶显示器件。

4. 发明授权

US07148091B2 Method of manufacturing thin film transistor 有权
公开(公告)号：US07148091B2
公开(公告)日：2006-12-12
申请号：US11196574
申请日：2005-08-04
申请人： Yasuyoshi Itoh , Takeshi Kubota , Toru Takeguchi
发明人： Yasuyoshi Itoh , Takeshi Kubota , Toru Takeguchi
IPC分类号： H01L21/00 , H01L21/336
CPC分类号： H01L29/78621 , H01L21/268 , H01L29/66757 , H01L29/78603 , H01L29/78627
摘要： Impurity ions contained in a semiconductor layer are diffused downwardly from a gate electrode by irradiating laser light from the back surface of a transparent substrate after source-drain regions are formed. Thus, a GOLD structure is formed. Consequently, the GOLD structure is formed by performing a smaller number of processes. Also, variation in characteristics can be suppressed by preventing occurrence of asymmetry between left and right LDD regions.

5. 发明授权

US07304711B2 Liquid crystal display and method of manufacturing the same 有权
标题翻译：液晶显示器及其制造方法
公开(公告)号：US07304711B2
公开(公告)日：2007-12-04
申请号：US11187238
申请日：2005-07-22
申请人： Toru Takeguchi , Takeshi Kubota
发明人： Toru Takeguchi , Takeshi Kubota
IPC分类号： G02F1/1345
CPC分类号： G02F1/13454 , G02F1/13452 , G02F2001/136295 , H01L27/124
摘要： A method of manufacturing a liquid crystal display holding a liquid crystal layer between a picture element substrate on which a pixel electrode driven by a thin film transistor is formed and a opposed counter substrate and forming a terminal to an external driving circuit on the picture element substrate, includes forming a semiconductor layer on the substrate, forming a gate insulating film on the semiconductor layer, forming a gate electrode on the gate insulating film, forming a source-drain region in the semiconductor layer, forming a source-drain wire on the substrate, forming a terminal wire on the substrate, forming insulating inorganic films on regions of the terminal wire on the external driving circuit and a display area sides, forming an organic resin film on the insulating inorganic film, and forming a conductive film on the terminal wire. The conductive film has a predetermined distance to the organic resin film.
摘要翻译：一种在形成有由薄膜晶体管驱动的像素电极的像素基板和相对的对置基板之间形成液晶层的液晶显示器的制造方法，并且在像素基板上形成端子到外部驱动电路包括在所述基板上形成半导体层，在所述半导体层上形成栅极绝缘膜，在所述栅极绝缘膜上形成栅极电极，在所述半导体层中形成源极 - 漏极区域，在所述基板上形成源极 - 漏极导线在基板上形成端子线，在外部驱动电路上的端子线的区域上形成绝缘性无机膜，在绝缘性无机膜上形成有机树脂膜，在端子线上形成导电膜。导电膜与有机树脂膜具有预定的距离。

6. 发明授权

US07012338B2 Semiconductor device, liquid crystal display device and method of manufacturing the semiconductor device 有权
标题翻译：半导体装置，液晶显示装置及半导体装置的制造方法
公开(公告)号：US07012338B2
公开(公告)日：2006-03-14
申请号：US10940822
申请日：2004-09-15
申请人： Takeshi Kubota , Toru Takeguchi , Nobuhiro Nakamura
发明人： Takeshi Kubota , Toru Takeguchi , Nobuhiro Nakamura
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40 , H01L29/41 , H01L29/43
CPC分类号： H01L21/76838 , H01L27/124
摘要： A terminal interconnection 45a including an aluminum alloy film 4a and a nitrogen-containing aluminum film 5a layered together is formed on a glass substrate 2. Nitrogen-containing aluminum film 5a in a contact portion 12a within a contact hole 11a exposing the surface of terminal interconnection 45a has a predetermined thickness d1 determined based on a specific resistance of the nitrogen-containing aluminum film. The thickness of the nitrogen-containing aluminum film outside the contact portion is larger than that of the nitrogen-containing aluminum film within the contact portion. Thereby, a semiconductor device or a liquid crystal display device having a reduced contact resistance and an appropriate resistance against chemical liquid is achieved.
摘要翻译：在玻璃基板2上形成包括铝合金膜4a和层叠在一起的含氮铝膜5a的端子互连件45a。露出端子互连件45a的表面的接触孔11a内的接触部分12a中的含氮铝膜5a具有基于氮 - 氮化合物的电阻率确定的预定厚度d 1，含铝膜。接触部外侧的含氮铝膜的厚度大于接触部内的含氮铝膜的厚度。由此，实现了具有降低的接触电阻和对化学液体的适当电阻的半导体器件或液晶显示器件。

7. 发明申请

US20060030086A1 Method of manufacturing thin film transistor 有权
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US20060030086A1
公开(公告)日：2006-02-09
申请号：US11196574
申请日：2005-08-04
申请人： Yasuyoshi Itoh , Takeshi Kubota , Toru Takeguchi
发明人： Yasuyoshi Itoh , Takeshi Kubota , Toru Takeguchi
IPC分类号： H01L21/84 , H01L21/425
CPC分类号： H01L29/78621 , H01L21/268 , H01L29/66757 , H01L29/78603 , H01L29/78627
摘要： Impurity ions contained in a semiconductor layer are diffused downwardly from a gate electrode by irradiating laser light from the back surface of a transparent substrate after source-drain regions are formed. Thus, a GOLD structure is formed. Consequently, the GOLD structure is formed by performing a smaller number of processes. Also, variation in characteristics can be suppressed by preventing occurrence of asymmetry between left and right LDD regions.
摘要翻译：包含在半导体层中的杂质离子通过在形成源极 - 漏极区域之后从透明衬底的背面照射激光而从栅电极向下扩散。因此，形成GOLD结构。因此，通过执行较少数量的处理来形成GOLD结构。此外，通过防止左右LDD区域之间的不对称性可以抑制特性的变化。

8. 发明申请

US20050036081A1 Semiconductor device, liquid crystal display device and method of manufacturing the semiconductor device 有权
标题翻译：半导体装置，液晶显示装置及半导体装置的制造方法
公开(公告)号：US20050036081A1
公开(公告)日：2005-02-17
申请号：US10940822
申请日：2004-09-15
申请人： Takeshi Kubota , Toru Takeguchi , Nobuhiro Nakamura
发明人： Takeshi Kubota , Toru Takeguchi , Nobuhiro Nakamura
IPC分类号： H01L23/522 , G02F1/136 , G02F1/1368 , H01L21/768 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/786
CPC分类号： H01L21/76838 , H01L27/124
摘要： A terminal interconnection 45a including an aluminum alloy film 4a and a nitrogen-containing aluminum film 5a layered together is formed on a glass substrate 2. Nitrogen-containing aluminum film 5a in a contact portion 12a within a contact hole 11a exposing the surface of terminal interconnection 45a has a predetermined thickness d1 determined based on a specific resistance of the nitrogen-containing aluminum film. The thickness of the nitrogen-containing aluminum film outside the contact portion is larger than that of the nitrogen-containing aluminum film within the contact portion. Thereby, a semiconductor device or a liquid crystal display device having a reduced contact resistance and an appropriate resistance against chemical liquid is achieved.
摘要翻译：在玻璃基板2上形成包括层合在一起的铝合金膜4a和含氮铝膜5a的端子互连件45a。在露出端子互连表面的接触孔11a内的接触部分12a中的含氮铝膜5a 45a具有基于含氮铝膜的电阻率确定的预定厚度d1。接触部外侧的含氮铝膜的厚度大于接触部内的含氮铝膜的厚度。由此，实现了具有降低的接触电阻和对化学液体的适当电阻的半导体器件或液晶显示器件。

9. 发明授权

US09579701B2 Manufacturing method of non-oriented electrical steel sheet 有权
标题翻译：无取向电工钢板的制造方法
公开(公告)号：US09579701B2
公开(公告)日：2017-02-28
申请号：US13813862
申请日：2011-07-29
申请人： Takeshi Kubota , Masahiro Fujikura
发明人： Takeshi Kubota , Masahiro Fujikura
IPC分类号： B21B15/00 , C21D8/12 , C21D6/00 , C21D9/46 , C22C38/00 , C22C38/04 , C22C38/06 , C22C38/16 , C22C38/18 , C22C38/34 , H01F1/16 , C22C38/02
CPC分类号： B21B15/00 , C21D6/008 , C21D8/1222 , C21D8/1233 , C21D8/1266 , C21D8/1272 , C21D9/46 , C21D2201/05 , C22C38/002 , C22C38/004 , C22C38/008 , C22C38/02 , C22C38/04 , C22C38/06 , C22C38/16 , C22C38/18 , C22C38/34 , H01F1/16
摘要： A steel having a predetermined composition is hot-rolled so as to form a steel strip, the steel strip is subjected to first cold-rolling, the steel strip is subjected to intermediate annealing, the steel strip is subjected to second cold-rolling, and the steel strip is subjected to finish annealing. A finish temperature in the hot-rolling is 900° C. or less, annealing is not performed between the hot-rolling and the first cold-rolling, and a rolling reduction in the second cold-rolling is not less than 40% nor more than 85%.
摘要翻译：将具有预定组成的钢热轧成钢带，对钢带进行第一次冷轧，对钢带进行中间退火，对钢带进行第二次冷轧，对钢带进行最终退火。热轧时的终轧温度为900℃以下，在热轧和第一次冷轧之间不进行退火，第二次冷轧的轧制压下率也不低于40％超过85％。

10. 发明授权

US08934794B2 Image forming apparatus, stirring unit and process cartridge 有权
标题翻译：图像形成装置，搅拌装置和处理盒
公开(公告)号：US08934794B2
公开(公告)日：2015-01-13
申请号：US13433611
申请日：2012-03-29
申请人： Takeshi Kubota
发明人： Takeshi Kubota
IPC分类号： G03G15/00 , G03G15/08 , G03G21/20
CPC分类号： G03G15/0846 , G03G15/0848 , G03G15/0887 , G03G15/0889 , G03G21/206
摘要： A developer stirring unit is rotated and driven without driving an electrophotographic photosensitive drum according to output information of a temperature detection unit of an image forming apparatus during a non-image formation period, thereby cooling a developer near a developing roller.
摘要翻译：根据图像形成装置的温度检测单元的输出信息，在非图像形成期间，显影剂搅拌单元被旋转驱动而不驱动电子照相感光鼓，从而冷却显影辊附近的显影剂。

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