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    • 3. 发明授权
    • Piezoelectric single crystal device
    • 压电单晶器件
    • US07402938B2
    • 2008-07-22
    • US11257159
    • 2005-10-25
    • Mitsuyoshi MatsushitaYosuke Iwasaki
    • Mitsuyoshi MatsushitaYosuke Iwasaki
    • H01L41/187
    • H01L41/18H01L41/1875
    • A piezoelectric single crystal device is provided exhibiting excellent piezoelectric properties, within a specific high-temperature range of Trrt° C. to (Trt−20)° C., where Trt represents a transformation temperature between a pseudocubic system and a tetragonal system. Specifically, the piezoelectric single crystal device is composed of a single crystal having a composition represented by [Pb(Mg,Nb)O3](1-X)·[PbTiO3](X), where X is within the range of 0.26 to 0.29 and having a complex perovskite structure, wherein a specific inductive capacity at 25° C. is 5,000 or more, and a specific inductive capacity at the transformation temperature between a pseudocubic system and a tetragonal system of the above-described single crystal is 2.5 times or more larger than the specific inductive capacity at 25° C.
    • 提供了在特定的高温范围内(T -20)℃下表现出优异的压电性能的压电单晶器件, 其中T 表示假立方体系和四方晶系之间的相变温度。 具体地,压电单晶器件由具有由[Pb(Mg,Nb)O 3](1-X))表示的组成的单晶组成[PbTiO (X),其中X在0.26至0.29的范围内并且具有复杂的钙钛矿结构,其中在25℃下的电感率为5,000或 并且在上述单晶的假立方体系和四方晶系之间的相变温度下的比感应能力比25℃下的电感率高2.5倍以上。
    • 8. 发明申请
    • Piezoelectric single crystal device
    • 压电单晶器件
    • US20060091353A1
    • 2006-05-04
    • US11257159
    • 2005-10-25
    • Mitsuyoshi MatsushitaYosuke Iwasaki
    • Mitsuyoshi MatsushitaYosuke Iwasaki
    • H01L41/18
    • H01L41/18H01L41/1875
    • A piezoelectric single crystal device is provided exhibiting excellent piezoelectric properties, within a specific high-temperature range of Trrt° C. to (Trt−20)° C., where Trt represents a transformation temperature between a pseudocubic system and a tetragonal system. Specifically, the piezoelectric single crystal device is composed of a single crystal having a composition represented by [Pb(Mg,Nb)O3](1−X)·[PbTiO3](X), where X is within the range of 0.26 to 0.29 and having a complex perovskite structure, wherein a specific inductive capacity at 25° C. is 5,000 or more, and a specific inductive capacity at the transformation temperature between a pseudocubic system and a tetragonal system of the above-described single crystal is 2.5 times or more larger than the specific inductive capacity at 25° C.
    • 提供了在特定的高温范围内(T -20)℃下表现出优异的压电性能的压电单晶器件, 其中T 表示假立方体系和四方晶系之间的相变温度。 具体地,压电单晶器件由具有由[Pb(Mg,Nb)O 3](1-X))表示的组成的单晶组成[PbTiO (X),其中X在0.26至0.29的范围内并且具有复杂的钙钛矿结构,其中在25℃下的电感率为5,000或 并且在上述单晶的假立方体系和四方晶系之间的相变温度下的比感应能力比25℃下的电感率高2.5倍以上。