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1. 发明授权

US08212615B2 Variable-gain amplifier circuit and wireless communication device integrated circuit equipped therewith 有权
标题翻译：可变增益放大器电路和配备其的无线通信设备集成电路
公开(公告)号：US08212615B2
公开(公告)日：2012-07-03
申请号：US12765010
申请日：2010-04-22
申请人： Toru Masuda , Nobuhiro Shiramizu , Takahiro Nakamura , Katsuyoshi Washio
发明人： Toru Masuda , Nobuhiro Shiramizu , Takahiro Nakamura , Katsuyoshi Washio
IPC分类号： H03F3/45 , H03F3/191
CPC分类号： H03G3/3052
摘要： There is disclosed a variable-gain amplifier circuit that operates on a low voltage, exhibits low distortion, provides a wide range of variation, and is suitable for use in a low-power-consumption wireless communication system. The variable-gain amplifier circuit is configured so that a variable-load circuit, which includes three reactance function elements and provides a wide range of impedance variation, is connected to a conductor circuit whose output terminal generates a positive-phase output current proportional to conductance with respect to an input voltage.
摘要翻译：公开了一种在低电压下操作的可变增益放大器电路，具有低失真，提供宽范围的变化，并且适用于低功耗无线通信系统。可变增益放大器电路被配置为使得包括三个电抗功能元件并提供宽范围的阻抗变化的可变负载电路连接到其输出端产生与电导成比例的正相输出电流的导体电路相对于输入电压。

2. 发明申请

US20090221259A1 ACTIVE MIXER CIRCUIT AND A RECEIVER CIRCUIT OR A MILLIMETER-WAVE COMMUNICATION UNIT USING IT 有权
标题翻译：主动混频器电路和接收器电路或使用其的微波通信单元
公开(公告)号：US20090221259A1
公开(公告)日：2009-09-03
申请号：US12370159
申请日：2009-02-12
申请人： Nobuhiro SHIRAMIZU , Toru Masuda , Takahiro Nakamura , Katsuyoshi Washio , Masamichi Tanabe
发明人： Nobuhiro SHIRAMIZU , Toru Masuda , Takahiro Nakamura , Katsuyoshi Washio , Masamichi Tanabe
IPC分类号： H04B1/16
CPC分类号： H04B1/28 , H03D7/1433 , H03D7/1441 , H03D7/1458 , H03D2200/0023 , H03D2200/0043
摘要： The present invention provides a semiconductor integrated circuit including an active mixer circuit that is operated at low voltage, low noise, and low power consumption. It includes a transconductance amplifier, a transformer, and a multiplier, connects a transformer between the transconductance amplifier and the multiplier, and separates between the transconductance amplifier and the multiplier with respect to direct current inside the transformer. Further, each of the tranconductance amplifier and the multiplier is configured of transistors that are single-stacked between the supply voltage terminal and ground terminal.
摘要翻译：本发明提供一种半导体集成电路，包括以低电压，低噪声和低功耗工作的有源混频器电路。它包括跨导放大器，变压器和乘法器，连接跨导放大器和乘法器之间的变压器，并且相对于变压器内部的直流电流在跨导放大器和乘法器之间分离。此外，跨导放大器和乘法器中的每一个由在电源电压端子和接地端子之间单层堆叠的晶体管构成。

3. 发明授权

US08121579B2 Active mixer circuit and a receiver circuit or a millimeter-wave communication unit using it 有权
标题翻译：有源混频器电路和接收器电路或使用它的毫米波通信单元
公开(公告)号：US08121579B2
公开(公告)日：2012-02-21
申请号：US12370159
申请日：2009-02-12
申请人： Nobuhiro Shiramizu , Toru Masuda , Takahiro Nakamura , Katsuyoshi Washio , Masamichi Tanabe
发明人： Nobuhiro Shiramizu , Toru Masuda , Takahiro Nakamura , Katsuyoshi Washio , Masamichi Tanabe
IPC分类号： H04B1/16 , H04B1/26 , H03D7/16
CPC分类号： H04B1/28 , H03D7/1433 , H03D7/1441 , H03D7/1458 , H03D2200/0023 , H03D2200/0043
摘要： The present invention provides a semiconductor integrated circuit including an active mixer circuit that is operated at low voltage, low noise, and low power consumption. It includes a transconductance amplifier, a transformer, and a multiplier, connects a transformer between the transconductance amplifier and the multiplier, and separates between the transconductance amplifier and the multiplier with respect to direct current inside the transformer. Further, each of the tranconductance amplifier and the multiplier is configured of transistors that are single-stacked between the supply voltage terminal and ground terminal.
摘要翻译：本发明提供一种半导体集成电路，包括以低电压，低噪声和低功耗工作的有源混频器电路。它包括跨导放大器，变压器和乘法器，连接跨导放大器和乘法器之间的变压器，并且相对于变压器内部的直流电流在跨导放大器和乘法器之间分离。此外，跨导放大器和乘法器中的每一个由在电源电压端子和接地端子之间单层堆叠的晶体管构成。

4. 发明申请

US20100271122A1 VARIABLE-GAIN AMPLIFIER CIRCUIT AND WIRELESS COMMUNICATION DEVICE INTEGRATED CIRCUIT EQUIPPED THEREWITH 有权
标题翻译：可变增益放大器电路和无线通信设备集成电路
公开(公告)号：US20100271122A1
公开(公告)日：2010-10-28
申请号：US12765010
申请日：2010-04-22
申请人： Toru MASUDA , Nobuhiro Shiramizu , Takahiro Nakamura , Katsuyoshi Washio
发明人： Toru MASUDA , Nobuhiro Shiramizu , Takahiro Nakamura , Katsuyoshi Washio
IPC分类号： H03G3/20
CPC分类号： H03G3/3052
摘要： There is disclosed a variable-gain amplifier circuit that operates on a low voltage, exhibits low distortion, provides a wide range of variation, and is suitable for use in a low-power-consumption wireless communication system. The variable-gain amplifier circuit is configured so that a variable-load circuit, which includes three reactance function elements and provides a wide range of impedance variation, is connected to a conductor circuit whose output terminal generates a positive-phase output current proportional to conductance with respect to an input voltage.
摘要翻译：公开了一种在低电压下操作的可变增益放大器电路，具有低失真，提供宽范围的变化，并且适用于低功耗无线通信系统。可变增益放大器电路被配置为使得包括三个电抗功能元件并提供宽范围的阻抗变化的可变负载电路连接到其输出端产生与电导成比例的正相输出电流的导体电路相对于输入电压。

5. 发明授权

US07098740B2 Radio frequency power amplifier and communication system 失效
标题翻译：射频功率放大器和通信系统
公开(公告)号：US07098740B2
公开(公告)日：2006-08-29
申请号：US10688976
申请日：2003-10-21
申请人： Masao Kondo , Toru Masuda , Katsuyoshi Washio
发明人： Masao Kondo , Toru Masuda , Katsuyoshi Washio
IPC分类号： H03F3/68
CPC分类号： H03F3/211 , H03F1/302 , H03F2200/372 , H03F2203/21178
摘要： There is provided not only a radio frequency power amplifier using an SiGe HBT subject to a little amplification distortion, but also a communication system using the same. A conventional radio frequency power amplifier provides base bias paths of transistors Q1 through QN (SiGe HBT) with bias resistors R11 through R1N having resistance values three to five times higher than those of a ballast resistor attached to each transistor's base. A coil LB is provided in parallel with the bias resistor as a means for compensating a voltage drop due to direct current component IDC flowing through the bias resistor. Addition of the bias resistor suppresses non-linearity of low-frequency variations in an output current. Addition of the coil compensates for voltage drop. Accordingly, the maximum linear output power can be improved. As a result, it is possible to provide the power amplifier subject to a little amplification distortion within a wide output range.
摘要翻译：不仅提供使用SiGe HBT的射频功率放大器，而且具有很小的放大失真，而且还提供了使用它的通信系统。传统的射频功率放大器提供具有偏置电阻器R11至R11的晶体管Q 1至Q N（SiGe HBT）的基极偏置路径， SUB> 1N 的电阻值是连接到每个晶体管基极的镇流电阻的三到五倍。作为用于补偿流过偏置电阻器的直流分量I DC的电压降的装置，设置有与偏压电阻并联的线圈L B B。增加偏置电阻抑制输出电流中低频变化的非线性。线圈的添加补偿电压降。因此，可以提高最大线性输出功率。结果，可以在宽的输出范围内提供具有小的放大失真的功率放大器。

6. 发明授权

US06785477B1 Optical receiver using variable negative-capacitance circuit 失效
标题翻译：光接收机采用可变负电容电路
公开(公告)号：US06785477B1
公开(公告)日：2004-08-31
申请号：US09646509
申请日：2000-09-19
申请人： Toru Masuda , Katsuyoshi Washio , Taizo Yoshikawa , Eiji Ohue , Kenichi Ohhata
发明人： Toru Masuda , Katsuyoshi Washio , Taizo Yoshikawa , Eiji Ohue , Kenichi Ohhata
IPC分类号： H04B1006
CPC分类号： H04B10/6932 , H03F3/08 , H03F3/082 , H03F3/343 , H03F3/3432 , H03F3/345 , H04B10/6931
摘要： A large time constant is caused due to parasitic capacitance at an anode terminal of a photodetector of an optical receiver. Therefore, an optical receiver wherein a variable negative capacitor mainly including an NPN-type transistor operable at high speed is configured and is connected to the input terminal of a preamplifier to which the output of the photodetector is input so that parasitic capacitance caused in the photodetector and due to packaging is equivalently reduced and the fluctuation of parasitic capacitance caused due to manufacturing dispersion is also compensated is provided.
摘要翻译：由于光接收器的光电检测器的阳极端子处的寄生电容引起大的时间常数。因此，其中主要包括以高速工作的NPN型晶体管的可变负电容器的光接收器被配置并连接到前置放大器的输入端子，输入光电检测器的输出端，使得在光电探测器中产生的寄生电容并且由于封装等效地减少，并且还补偿了由于制造分散引起的寄生电容的波动。

7. 发明授权

US06658217B2 Optical receiver 失效
公开(公告)号：US06658217B2
公开(公告)日：2003-12-02
申请号：US09946450
申请日：2001-09-06
申请人： Kenichi Ohhata , Ryoji Takeyari , Toru Masuda , Katsuyoshi Washio , Yasushi Hatta
发明人： Kenichi Ohhata , Ryoji Takeyari , Toru Masuda , Katsuyoshi Washio , Yasushi Hatta
IPC分类号： H04B1006
CPC分类号： H04B10/6932 , H04B10/6933 , H04B10/695
摘要： An optical receiver generates a voltage signal having a predetermined swing from a current signal, and feeds the voltage signal to a decision circuit. An optical receiving element receives the input optical signal, converts the optical signal to a current signal, and provides the current signal to a preamplifier, which converts the input current signal into a voltage signal. The voltage signal is input to an amplifier having a limiting function, which linearly amplifies the voltage signal when the swing of the voltage signal is smaller than a predetermined value, and limitedly amplifies the voltage signal when the voltage signal is greater than the predetermined value. An automatic-gain-control amplifier receives the output from the amplifier with the limiting function, and amplifies the input voltage signal to a voltage signal having a constant swing. The decision circuit receives the output of the automatic-gain-control amplifier and decides the binary nature of the voltage, and thus of the input optical signal.

8. 发明授权

US06304357B1 Optical receiver 失效
标题翻译：光接收机
公开(公告)号：US06304357B1
公开(公告)日：2001-10-16
申请号：US09041973
申请日：1998-03-13
申请人： Kenichi Ohhata , Ryoji Takeyari , Toru Masuda , Katsuyoshi Washio , Yasushi Hatta
发明人： Kenichi Ohhata , Ryoji Takeyari , Toru Masuda , Katsuyoshi Washio , Yasushi Hatta
IPC分类号： H04B1006
CPC分类号： H04B10/6932 , H04B10/6933 , H04B10/695
摘要： An optical receiver generates a voltage signal having a predetermined swing from a current signal, and feeds the voltage signal to a decision circuit. An optical receiving element receives the input optical signal, converts the optical signal to a current signal, and provides the current signal to a preamplifier, which converts the input current signal into a voltage signal. The voltage signal is input to an amplifier having a limiting function, which linearly amplifies the voltage signal when the swing of the voltage signal is smaller than a predetermined value, and limitedly amplifies the voltage signal when the voltage signal is greater than the predetermined value. An automatic-gain-control amplifier receives the output from the amplifier with the limiting function, and amplifies the input voltage signal to a voltage signal having a constant swing. The decision circuit receives the output of the automatic-gain-control amplifier and decides the binary nature of the voltage, and thus of the input optical signal.
摘要翻译：光接收器从电流信号产生具有预定摆幅的电压信号，并将电压信号馈送到判定电路。光接收元件接收输入光信号，将光信号转换为电流信号，并将电流信号提供给前置放大器，将前置放大器转换成电压信号。电压信号被输入到具有限制功能的放大器，当电压信号的摆动小于预定值时线性放大电压信号，并且当电压信号大于预定值时有限地放大电压信号。自动增益控制放大器以限制功能接收来自放大器的输出，并将输入电压信号放大到具有恒定摆幅的电压信号。决定电路接收自动增益控制放大器的输出，并确定电压的二进制特性，从而确定输入光信号的二进制特性。

9. 发明申请

US20050001238A1 Semiconductor device and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050001238A1
公开(公告)日：2005-01-06
申请号：US10855378
申请日：2004-05-28
申请人： Eiji Oue , Katsuyoshi Washio , Hiromi Shimamoto , Katsuya Oda , Makoto Miura
发明人： Eiji Oue , Katsuyoshi Washio , Hiromi Shimamoto , Katsuya Oda , Makoto Miura
IPC分类号： H01L21/331 , H01L29/732 , H01L29/737 , H01L31/0328
CPC分类号： H01L29/66287 , H01L29/7322
摘要： A bipolar transistor is provided in which both the base resistance and the base-collector capacitance are reduced and which is capable of operating at a high cutoff frequency. The semiconductor device is structured so that the emitter and extrinsic base are separated from each other by an insulator sidewall and the bottom faces of the insulator sidewall, and the emitter are approximately on the same plane. The extrinsic base electrode and the collector region are separated from each other by an insulator.
摘要翻译：提供双极晶体管，其中基极电阻和基极集电极电容都减小，并且能够以高截止频率工作。半导体器件被构造成使得发射极和非本征基极通过绝缘体侧壁和绝缘体侧壁的底面彼此分离，并且发射极大致在同一平面上。外部基极和集电极区域通过绝缘体彼此分离。

10. 发明授权

US06667489B2 Heterojunction bipolar transistor and method for production thereof 有权
标题翻译：异质结双极晶体管及其制造方法
公开(公告)号：US06667489B2
公开(公告)日：2003-12-23
申请号：US10299837
申请日：2002-11-20
申请人： Isao Suzumura , Katsuya Oda , Katsuyoshi Washio
发明人： Isao Suzumura , Katsuya Oda , Katsuyoshi Washio
IPC分类号： H01L2906
CPC分类号： H01L29/66242 , H01L29/7378
摘要： A high-speed heterojunction bipolar transistor in a large injection of electrons from the emitter and a method for production thereof. In a typical example of the SiGeC heterojunction bipolar transistor, the collector has a layer of n-type single-crystal Si and a layer of n-type single-crystal SiGe, the base is a layer of heavily doped p-type single-crystal SiGeC, and the emitter is a layer of n-type single-crystal Si. At the heterointerface between the layer of n-type single-crystal SiGe and the layer of p-type single-crystal SiGeC, the bandgap of the p-type single-crystal SiGeC is larger than that of the layer of n-type single-crystal SiGe. Even though the effective neutral base expands due to an increase in electrons injected from the emitter, no energy barrier occurs in the conduction band at the heterointerface between the layer of n-type single-crystal SiGe and the layer of p-type single-crystal SiGeC. Thus, the diffusion of electrons is not inhibited and it is possible to realize high-speed heterojunction bipolar transistors even in the high injection state.
摘要翻译：从发射极大量注入电子的高速异质结双极晶体管及其制造方法。在SiGeC异质结双极晶体管的典型实例中，集电体具有n型单晶Si层和n型单晶SiGe层，基极是重掺杂p型单晶层 SiGeC，发射极是n型单晶Si层。在n型单晶SiGe层和p型单晶SiGeC层之间的异质界面处，p型单晶SiGeC的带隙大于n型单晶SiGeC层的带隙，水晶SiGe。即使有效的中性碱基由于从发射体注入的电子的增加而扩大，在n型单晶SiGe层与p型单晶层之间的异质界面的导带中也不发生能量势垒 SiGeC。因此，电子的扩散不被抑制，即使在高注入状态下也可以实现高速异质结双极晶体管。

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