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1. 发明授权

US06384688B1 High-frequency power amplifier module 失效
标题翻译：高频功率放大器模块
公开(公告)号：US06384688B1
公开(公告)日：2002-05-07
申请号：US09673977
申请日：2000-10-25
申请人： Toru Fujioka , Isao Yoshida , Mineo Katsueda , Masatoshi Morikawa , Yoshikuni Matsunaga , Kenji Sekine , Osamu Kagaya
发明人： Toru Fujioka , Isao Yoshida , Mineo Katsueda , Masatoshi Morikawa , Yoshikuni Matsunaga , Kenji Sekine , Osamu Kagaya
IPC分类号： H03F304
CPC分类号： H03F3/72 , H03F3/193 , H03F3/211 , H03F2200/306 , H03F2200/309 , H03F2200/39 , H03F2200/429 , H04B1/0053 , H04B1/0458
摘要： A radio frequency power amplifier module for a dual-band type mobile communication apparatus that can transmit and receive the first frequency f1 and the second frequency f2 (f2=2×f1) is structured as explained below. This radio frequency power amplifier module for dual-band type mobile communication apparatus is comprised of a drive stage amplifier having the gain peaks at f1 and f2 with a matching circuit and a radio frequency power output circuit including a radio frequency power output transistor. The output circuit is constituted of a transmission line connected to the drain end of the output transistor, a parallel resonance circuit connected in series to the transmission line to resonate at the harmonics in the frequency twice the frequency f2, a series resonance circuit provided between one end of the resonance circuit and the ground to resonate at the harmonics in the frequency twice the frequency f2 and an output matching circuit provided in series to the other end of the parallel resonance circuit for the matching with f1 and f2. The transmission line is set to terminate at the drain end for the even number order harmonics of f2 with the reactance existing at the drain end and a circuit element constant forming the parallel resonance circuit is set to open at the drain end for the odd number order harmonics of f2 with the series resonance circuit, transmission line and reactance existing at the drain end. With the structure explained above, since harmonics power can be controlled through control of the predetermined harmonics, high efficiency and reduction in size of the radio frequency power amplifier module can be realized.
摘要翻译：可以发送和接收第一频率f1和第二频率f2（f2 = 2xf1）的用于双频带型移动通信装置的射频功率放大器模块如下所述地构成。该射频功率放大器模块用于双频型移动通信装置包括具有匹配电路的具有在f1和f2的增益峰值的驱动级放大器和包括射频功率输出晶体管的射频功率输出电路。输出电路由连接到输出晶体管的漏极端的传输线构成，并联谐振电路与传输线串联连接，以频率f2的频率谐振地谐振，串联谐振电路设置在一个谐振电路的端部和谐振频率为频率f2的频率的谐波的接地和与并联谐振电路的另一端串联设置以用于与f1和f2匹配的输出匹配电路。传输线被设置为在漏极端处终止，其中存在于漏极端处的电抗的偶数次谐波为f2，并且形成并联谐振电路的电路元件常数设置为在漏极端处为奇数阶开路具有串联谐振电路的f2谐波，漏极端存在的传输线和电抗。通过上述结构，由于能够通过控制预定谐波来控制谐波功率，高效率和减小射频功率放大器的尺寸模块可以实现。

2. 发明授权

US06865399B2 Mobile telephone apparatus 失效
标题翻译：移动电话设备
公开(公告)号：US06865399B2
公开(公告)日：2005-03-08
申请号：US10062529
申请日：2002-02-05
申请人： Toru Fujioka , Isao Yoshida , Mineo Katsueda , Masatoshi Morikawa , Yoshikuni Matsunaga , Kenji Sekine , Osamu Kagaya
发明人： Toru Fujioka , Isao Yoshida , Mineo Katsueda , Masatoshi Morikawa , Yoshikuni Matsunaga , Kenji Sekine , Osamu Kagaya
IPC分类号： H04B1/40 , H04B1/00 , H04B1/04
CPC分类号： H03F3/245 , H03F1/56 , H03F3/195 , H03F3/72 , H03F2200/111 , H03F2200/18 , H03F2200/222 , H03F2200/387 , H03F2200/405 , H03F2200/429 , H03F2203/7209 , H03F2203/7221 , H04B1/005 , H04B1/006 , H04B1/406
摘要： In a mobile telephone apparatus corresponding to dual-band provided with an RF power module to operate in two kinds of different frequencies, a common harmonics control circuit is provided to the output circuit of such RF power module to realize higher efficiency in view of controlling respective harmonics power for both band frequencies. Moreover, a means for selectively setting the bias is also provided so that the maximum efficiency can be attained depending on the output power required with respective communication systems with the bias control signal output from the CPU of the control unit interlocking with selection of frequency of the mobile telephone apparatus body.
摘要翻译：在对应于具有以两种不同频率工作的RF功率模块的双频带的移动电话装置中，向这种RF功率模块的输出电路提供公共谐波控制电路，以实现更高的效率两个频段的谐波功率。此外，还提供了用于选择性地设置偏置的装置，使得可以根据各个通信系统所需的输出功率来获得最大效率，其中从控制单元的CPU输出的偏置控制信号与选择频率的移动电话机身。

3. 发明授权

US06535069B2 High-frequency power amplifier module 失效
标题翻译：高频功率放大器模块
公开(公告)号：US06535069B2
公开(公告)日：2003-03-18
申请号：US10084364
申请日：2002-02-28
申请人： Toru Fujioka , Isao Yoshida , Mineo Katsueda , Masatoshi Morikawa , Yoshikuni Matsunaga , Kenji Sekine , Osamu Kagaya
发明人： Toru Fujioka , Isao Yoshida , Mineo Katsueda , Masatoshi Morikawa , Yoshikuni Matsunaga , Kenji Sekine , Osamu Kagaya
IPC分类号： H03F304
CPC分类号： H03F3/72 , H03F3/193 , H03F3/211 , H03F2200/306 , H03F2200/309 , H03F2200/39 , H03F2200/429 , H04B1/0053 , H04B1/0458
摘要： A radio frequency power amplifier module for a dual-band type mobile communication apparatus that can transmit and receive a first frequency f1 and second frequency f2 (f2=2×f1). It includes a drive stage amplifier having the gain peaks at f1 and f2 with a matching circuit and a radio frequency power output circuit including a radio frequency power output transistor. The output circuit has a transmission line connected to the drain end of the output transistor, a parallel resonance circuit connected in series to the transmission line to resonate at harmonics of a frequency twice the frequency f2, a series resonance circuit provided between one end of the resonance circuit and the ground to resonate at harmonics of a frequency twice the frequency f2 and an output matching circuit provided in series to the other end of the parallel resonance circuit for matching with f1 and f2.
摘要翻译：一种能够发送和接收第一频率f1和第二频率f2（f2 = 2xf1）的双频带型移动通信装置的射频功率放大器模块。它包括具有匹配电路的f1和f2处的增益峰值的驱动级放大器和包括射频功率输出晶体管的射频功率输出电路。输出电路具有连接到输出晶体管的漏极端的传输线，串联连接到传输线的并联谐振电路，以使谐振频率为频率f2的两倍的频率，串联谐振电路设置在谐振电路和接地谐振频率为频率f2的频率的谐波，以及与并联谐振电路的另一端串联设置的与f1和f2匹配的输出匹配电路。

4. 发明授权

US06366788B1 Mobile telephone system 失效
标题翻译：移动电话系统
公开(公告)号：US06366788B1
公开(公告)日：2002-04-02
申请号：US09674072
申请日：2000-10-26
申请人： Toru Fujioka , Isao Yoshida , Mineo Katsueda , Masatoshi Morikawa , Yoshikuni Matsunaga , Kenji Sekine , Osamu Kagaya
发明人： Toru Fujioka , Isao Yoshida , Mineo Katsueda , Masatoshi Morikawa , Yoshikuni Matsunaga , Kenji Sekine , Osamu Kagaya
IPC分类号： H04B138
CPC分类号： H04B1/006 , H03F3/193 , H03F3/604 , H03F3/72 , H03F2200/306 , H03F2200/309 , H03F2200/39 , H03F2200/429 , H04B1/005 , H04B1/406
摘要： In a mobile telephone apparatus corresponding to dual-band provided with an RF power module to operate in two kinds of different frequencies, a common harmonics control circuit is provided to the output circuit of such RF power module to realize higher efficiency in view of controlling respective harmonics power for both band frequencies. Moreover, a means for selectively setting the bias is also provided so that the maximum efficiency can be attained depending on the output power required with respective communication systems with the bias control signal output from the CPU of the control unit interlocking with selection of frequency of the mobile telephone apparatus body.
摘要翻译：在对应于具有以两种不同频率工作的RF功率模块的双频带的移动电话装置中，向这种RF功率模块的输出电路提供公共谐波控制电路，以实现更高的效率两个频段的谐波功率。此外，还提供了用于选择性地设置偏置的装置，使得可以根据各个通信系统所需的输出功率来获得最大效率，其中从控制单元的CPU输出的偏置控制信号与选择频率的移动电话机身。

5. 发明授权

US07817437B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07817437B2
公开(公告)日：2010-10-19
申请号：US12394421
申请日：2009-02-27
申请人： Iwamichi Kohjiro , Yasuhiro Nunogawa , Sakae Kikuchi , Shizuo Kondo , Tetsuaki Adachi , Osamu Kagaya , Kenji Sekine , Eiichi Hase , Kiichi Yamashita
发明人： Iwamichi Kohjiro , Yasuhiro Nunogawa , Sakae Kikuchi , Shizuo Kondo , Tetsuaki Adachi , Osamu Kagaya , Kenji Sekine , Eiichi Hase , Kiichi Yamashita
IPC分类号： H05K7/02 , H05K7/06 , H05K7/08 , H05K7/10
CPC分类号： H01L25/16 , H01L23/49844 , H01L23/552 , H01L23/645 , H01L23/66 , H01L24/06 , H01L24/48 , H01L24/49 , H01L2223/6611 , H01L2223/6644 , H01L2224/05554 , H01L2224/05599 , H01L2224/48091 , H01L2224/48227 , H01L2224/48799 , H01L2224/49113 , H01L2224/49175 , H01L2224/49433 , H01L2224/85399 , H01L2924/00014 , H01L2924/01005 , H01L2924/01014 , H01L2924/01015 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01082 , H01L2924/09701 , H01L2924/10161 , H01L2924/10253 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/15153 , H01L2924/1517 , H01L2924/19105 , H01L2924/19107 , H01L2924/30107 , H01L2924/3025 , H03F1/56 , H03F3/195 , H03F3/213 , H03F3/604 , H03F2200/12 , H03F2200/168 , H03F2200/222 , H03F2200/318 , H03F2200/387 , H03F2200/408 , H03F2200/451 , H03H7/383 , H01L2924/00 , H01L2224/45099
摘要： In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.
摘要翻译：在诸如高频功率放大器模块的半导体器件中，在安装在布线基板的主表面上的半导体芯片上形成多个放大装置，并且半导体芯片的电极通过导线电连接到电极的布线基板。为了使高频功率放大器模块尺寸变小，将电连接到固定基准电位的导线的基板侧接合电极位于距离半导体芯片的一侧更靠近基板侧接合电极的位置，电连接到输出线。电连接到输入线的基板侧输入电极位于与半导体芯片的侧面相距一定距离处，等于从半导体芯片侧到基板侧输出电极的距离，或者距离半导体芯片半导体芯片的侧面比基板侧接合电极为止。

6. 发明申请

US20050110573A1 Radio frequency power amplifier 有权
标题翻译：射频功率放大器
公开(公告)号：US20050110573A1
公开(公告)日：2005-05-26
申请号：US11023414
申请日：2004-12-29
申请人： Masami Ohnishi , Hidetoshi Matsumoto , Tomonori Tanoue , Osamu Kagaya , Kenji Sekine
发明人： Masami Ohnishi , Hidetoshi Matsumoto , Tomonori Tanoue , Osamu Kagaya , Kenji Sekine
IPC分类号： H03F3/60 , H03F1/02 , H03F1/56 , H03F3/189 , H03F3/24 , H03F3/68
CPC分类号： H03F1/56 , H03F1/0277 , H03F1/565 , H03F3/602 , H03F3/72 , H03F2203/7209
摘要： The present invention provides a radio frequency power amplifier which may not introduce radio frequency loss during switching power amplifier units between high and low output power levels. By connecting a first-stage matching network M12 and first-stage matching network M13 to respective output nodes of a power amplifier unit A11 and power amplifier unit A12 that either one operate by switching, connecting the output nodes of the first-stage matching network M12 and M13 in parallel, connecting a last-stage matching network M11 between the junction of M12 and M13 and the output terminal OUT, the first-stage matching networks M12, M13, and last-stage matching network M11 are formed, for both power amplifier units A11 and A12, so that impedance matching is established between the output terminal OUT and the power amplifier unit in operation when one unit is in operation the other is in stop of operation. The present invention allows switching from one power amplifier unit to the other without the need of a radio frequency switch.
摘要翻译：本发明提供一种射频功率放大器，其可以在高输出功率级和低输出功率级之间的开关功率放大器单元期间不会引入射频损耗。通过将第一级匹配网络M12和第一级匹配网络M13连接到通过切换操作的功率放大器单元A11和功率放大器单元A12的各个输出节点，连接第一级匹配网络M12的输出节点 M13并联连接M12和M13的连接点与输出端子OUT之间的最后一级匹配网络M11，形成第一级匹配网络M12，M13和最后级匹配网络M11，用于功率放大器单元A11和A12，使得当一个单元在操作中另一个处于停止操作时，在操作中在输出端子OUT和功率放大器单元之间建立阻抗匹配。本发明允许从一个功率放大器单元切换到另一个，而不需要射频切换。

7. 发明申请

US20090161329A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20090161329A1
公开(公告)日：2009-06-25
申请号：US12394421
申请日：2009-02-27
申请人： Iwamichi Kohjiro , Yasuhiro Nunogawa , Sakae Kikuchi , Shizuo Kondo , Tetsuaki Adachi , Osamu Kagaya , Kenji Sekine , Eiichi Hase , Kiichi Yamashita
发明人： Iwamichi Kohjiro , Yasuhiro Nunogawa , Sakae Kikuchi , Shizuo Kondo , Tetsuaki Adachi , Osamu Kagaya , Kenji Sekine , Eiichi Hase , Kiichi Yamashita
IPC分类号： H01L23/66
CPC分类号： H01L25/16 , H01L23/49844 , H01L23/552 , H01L23/645 , H01L23/66 , H01L24/06 , H01L24/48 , H01L24/49 , H01L2223/6611 , H01L2223/6644 , H01L2224/05554 , H01L2224/05599 , H01L2224/48091 , H01L2224/48227 , H01L2224/48799 , H01L2224/49113 , H01L2224/49175 , H01L2224/49433 , H01L2224/85399 , H01L2924/00014 , H01L2924/01005 , H01L2924/01014 , H01L2924/01015 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01082 , H01L2924/09701 , H01L2924/10161 , H01L2924/10253 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/15153 , H01L2924/1517 , H01L2924/19105 , H01L2924/19107 , H01L2924/30107 , H01L2924/3025 , H03F1/56 , H03F3/195 , H03F3/213 , H03F3/604 , H03F2200/12 , H03F2200/168 , H03F2200/222 , H03F2200/318 , H03F2200/387 , H03F2200/408 , H03F2200/451 , H03H7/383 , H01L2924/00 , H01L2224/45099
摘要： In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.
摘要翻译：在诸如高频功率放大器模块的半导体器件中，在安装在布线基板的主表面上的半导体芯片上形成多个放大装置，并且半导体芯片的电极通过导线电连接到电极的布线基板。为了使高频功率放大器模块尺寸变小，将电连接到固定基准电位的导线的基板侧接合电极位于距离半导体芯片的一侧更靠近基板侧接合电极的位置，电连接到输出线。电连接到输入线的基板侧输入电极位于距离半导体芯片侧的距离大约等于从半导体芯片的侧面到基板侧输出电极的距离处，或者位于距离半导体芯片半导体芯片的侧面比基板侧接合电极为止。

8. 发明申请

US20070001300A1 Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：US20070001300A1
公开(公告)日：2007-01-04
申请号：US11451579
申请日：2006-06-13
申请人： Iwamichi Kohjiro , Yasuhiro Nunogawa , Sakae Kikuchi , Shizuo Kondo , Tetsuaki Adachi , Osamu Kagaya , Kenji Sekine , Eiichi Hase , Kiichi Yamashita
发明人： Iwamichi Kohjiro , Yasuhiro Nunogawa , Sakae Kikuchi , Shizuo Kondo , Tetsuaki Adachi , Osamu Kagaya , Kenji Sekine , Eiichi Hase , Kiichi Yamashita
IPC分类号： H01L23/34
CPC分类号： H01L24/06 , H01L23/04 , H01L23/49805 , H01L23/49822 , H01L23/49838 , H01L23/49844 , H01L23/552 , H01L23/645 , H01L23/66 , H01L24/48 , H01L24/49 , H01L25/16 , H01L2223/6611 , H01L2223/6627 , H01L2223/6644 , H01L2223/6655 , H01L2224/05553 , H01L2224/05554 , H01L2224/05599 , H01L2224/45139 , H01L2224/45147 , H01L2224/4554 , H01L2224/45669 , H01L2224/48011 , H01L2224/48091 , H01L2224/48227 , H01L2224/484 , H01L2224/48799 , H01L2224/49111 , H01L2224/49113 , H01L2224/4912 , H01L2224/49175 , H01L2224/49433 , H01L2224/73265 , H01L2224/85399 , H01L2924/00014 , H01L2924/01005 , H01L2924/01014 , H01L2924/01015 , H01L2924/01021 , H01L2924/01023 , H01L2924/01027 , H01L2924/01029 , H01L2924/01047 , H01L2924/01051 , H01L2924/01078 , H01L2924/09701 , H01L2924/10161 , H01L2924/10253 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/15153 , H01L2924/1517 , H01L2924/15173 , H01L2924/15313 , H01L2924/15787 , H01L2924/16152 , H01L2924/19032 , H01L2924/19105 , H01L2924/19107 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , H03F1/56 , H03F3/195 , H03F3/213 , H03F3/604 , H03F2200/12 , H03F2200/168 , H03F2200/222 , H03F2200/255 , H03F2200/318 , H03F2200/387 , H03F2200/408 , H03F2200/411 , H03F2200/423 , H03F2200/451 , H03F2200/543 , H03H7/383 , H05K1/0243 , H05K1/0298 , H05K1/183 , H05K3/403 , H01L2924/05432 , H01L2924/2065 , H01L2224/45099 , H01L2924/00
摘要： In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.
摘要翻译：在诸如高频功率放大器模块的半导体器件中，在安装在布线基板的主表面上的半导体芯片上形成多个放大装置，并且半导体芯片的电极通过导线电连接到电极的布线基板。为了使高频功率放大器模块尺寸变小，将电连接到固定基准电位的导线的基板侧接合电极位于距离半导体芯片的一侧更靠近基板侧接合电极的位置，电连接到输出线。电连接到输入线的基板侧输入电极位于距离半导体芯片侧的距离大约等于从半导体芯片的侧面到基板侧输出电极的距离处，或者位于距离半导体芯片半导体芯片的侧面比基板侧接合电极为止。

9. 发明申请

US20060012425A1 Radio frequency power amplifier 有权
公开(公告)号：US20060012425A1
公开(公告)日：2006-01-19
申请号：US11230467
申请日：2005-09-21
申请人： Masami Ohnishi , Hidetoshi Matsumoto , Tomonori Tanoue , Osamu Kagaya , Kenji Sekine
发明人： Masami Ohnishi , Hidetoshi Matsumoto , Tomonori Tanoue , Osamu Kagaya , Kenji Sekine
IPC分类号： H03F3/68
CPC分类号： H03F1/56 , H03F1/0277 , H03F1/565 , H03F3/602 , H03F3/72 , H03F2203/7209
摘要： The present invention provides a radio frequency power amplifier which may not introduce radio frequency loss during switching power amplifier units between high and low output power levels. By connecting a first-stage matching network M12 and first-stage matching network M13 to respective output nodes of a power amplifier unit A11 and power amplifier unit A12 that either one operate by switching, connecting the output nodes of the first-stage matching network M12 and M13 in parallel, connecting a last-stage matching network M11 between the junction of M12 and M13 and the output terminal OUT, the first-stage matching networks M12, M13, and last-stage matching network M11 are formed, for both power amplifier units A11 and A12, so that impedance matching is established between the output terminal OUT and the power amplifier unit in operation when one unit is in operation the other is in stop of operation. The present invention allows switching from one power amplifier unit to the other without the need of a radio frequency switch.

10. 发明申请

US20080048777A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20080048777A1
公开(公告)日：2008-02-28
申请号：US11905421
申请日：2007-10-01
申请人： Iwamichi Kohjiro , Yasuhiro Nunogawa , Sakae Kikuchi , Shizuo Kondo , Tetsuaki Adachi , Osamu Kagaya , Kenji Sekine , Eiichi Hase , Kiichi Yamashita
发明人： Iwamichi Kohjiro , Yasuhiro Nunogawa , Sakae Kikuchi , Shizuo Kondo , Tetsuaki Adachi , Osamu Kagaya , Kenji Sekine , Eiichi Hase , Kiichi Yamashita
IPC分类号： H03F3/20
CPC分类号： H01L25/16 , H01L23/49844 , H01L23/552 , H01L23/645 , H01L23/66 , H01L24/06 , H01L24/48 , H01L24/49 , H01L2223/6611 , H01L2223/6644 , H01L2224/05554 , H01L2224/05599 , H01L2224/48091 , H01L2224/48227 , H01L2224/48799 , H01L2224/49113 , H01L2224/49175 , H01L2224/49433 , H01L2224/85399 , H01L2924/00014 , H01L2924/01005 , H01L2924/01014 , H01L2924/01015 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01082 , H01L2924/09701 , H01L2924/10161 , H01L2924/10253 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/15153 , H01L2924/1517 , H01L2924/19105 , H01L2924/19107 , H01L2924/30107 , H01L2924/3025 , H03F1/56 , H03F3/195 , H03F3/213 , H03F3/604 , H03F2200/12 , H03F2200/168 , H03F2200/222 , H03F2200/318 , H03F2200/387 , H03F2200/408 , H03F2200/451 , H03H7/383 , H01L2924/00 , H01L2224/45099
摘要： In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.
摘要翻译：在诸如高频功率放大器模块的半导体器件中，在安装在布线基板的主表面上的半导体芯片上形成多个放大装置，并且半导体芯片的电极通过导线电连接到电极的布线基板。为了使高频功率放大器模块尺寸变小，将电连接到固定基准电位的导线的基板侧接合电极位于距离半导体芯片的一侧更靠近基板侧接合电极的位置，电连接到输出线。电连接到输入线的基板侧输入电极位于距离半导体芯片侧的距离大约等于从半导体芯片的侧面到基板侧输出电极的距离处，或者位于距离半导体芯片半导体芯片的侧面比基板侧接合电极为止。

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