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1. 发明授权

US08440259B2 Vapor based combinatorial processing 有权
公开(公告)号：US08440259B2
公开(公告)日：2013-05-14
申请号：US12013729
申请日：2008-01-14
申请人： Tony P. Chiang , Sunil Shanker , Chi-I Lang
发明人： Tony P. Chiang , Sunil Shanker , Chi-I Lang
IPC分类号： C23C16/00
CPC分类号： C23C16/45574 , C23C16/45544 , C23C16/45548
摘要： A combinatorial processing chamber and method are provided. In the method a fluid volume flows over a surface of a substrate with differing portions of the fluid volume having different constituent components to concurrently expose segregated regions of the substrate to a mixture of the constituent components that differ from constituent components to which adjacent regions are exposed. Differently processed segregated regions are generated through the multiple flowings.

2. 发明申请

US20110244690A1 COMBINATORIAL PLASMA ENHANCED DEPOSITION AND ETCH TECHNIQUES 有权
标题翻译：组合等离子体增强沉积和蚀刻技术
公开(公告)号：US20110244690A1
公开(公告)日：2011-10-06
申请号：US12963995
申请日：2010-12-09
申请人： Sunil Shanker , Tony P. Chiang , Chi-I Lang
发明人： Sunil Shanker , Tony P. Chiang , Chi-I Lang
IPC分类号： H01L21/311 , H01L21/02
CPC分类号： H01L21/02274 , C23C16/0227 , C23C16/44 , C23C16/45523 , C23C16/45525 , C23C16/45536 , C23C16/45548 , C23C16/45565 , C23C16/45574 , C23C16/4586 , C23C16/509 , C23C16/5096 , H01J37/32091 , H01J37/3244 , H01J37/32532 , H01J37/32541 , H01J37/32568 , H01J37/32715 , H01J37/32779 , H01L21/3065 , H01L21/67069
摘要： According to various embodiments of the disclosure, an apparatus and method for enhanced deposition and etch techniques is described, including a pedestal, the pedestal having at least two electrodes embedded in the pedestal, a showerhead above the pedestal, a plasma gas source connected to the showerhead, wherein the showerhead is configured to deliver plasma gas to a processing region between the showerhead and the substrate and a power source operably connected to the showerhead and the at least two electrodes with plasma being substantially contained in an area which corresponds with one electrode of the at least two electrodes.
摘要翻译：根据本公开的各种实施例，描述了一种用于增强沉积和蚀刻技术的装置和方法，包括基座，具有至少两个嵌入基座的电极的基座，基座上方的喷头，连接到基座的等离子体气体源淋浴头，其中所述喷头被构造成将等离子体气体输送到所述喷头和所述基板之间的处理区域，以及电源，其可操作地连接到所述喷头和所述至少两个电极，其中等离子体基本上包含在对应于所述至少两个电极。

3. 发明授权

US08726838B2 Combinatorial plasma enhanced deposition and etch techniques 有权
标题翻译：组合等离子体增强沉积和蚀刻技术
公开(公告)号：US08726838B2
公开(公告)日：2014-05-20
申请号：US12963995
申请日：2010-12-09
申请人： Sunil Shanker , Tony P. Chiang , Chi-I Lang
发明人： Sunil Shanker , Tony P. Chiang , Chi-I Lang
IPC分类号： C23C16/50 , C23C16/509 , H01L21/3065 , C23C16/455 , C23C16/02 , C23C16/458 , H01L21/67 , H01J37/32
CPC分类号： H01L21/02274 , C23C16/0227 , C23C16/44 , C23C16/45523 , C23C16/45525 , C23C16/45536 , C23C16/45548 , C23C16/45565 , C23C16/45574 , C23C16/4586 , C23C16/509 , C23C16/5096 , H01J37/32091 , H01J37/3244 , H01J37/32532 , H01J37/32541 , H01J37/32568 , H01J37/32715 , H01J37/32779 , H01L21/3065 , H01L21/67069
摘要： According to various embodiments of the disclosure, an apparatus and method for enhanced deposition and etch techniques is described, including a pedestal, the pedestal having at least two electrodes embedded in the pedestal, a showerhead above the pedestal, a plasma gas source connected to the showerhead, wherein the showerhead is configured to deliver plasma gas to a processing region between the showerhead and the substrate and a power source operably connected to the showerhead and the at least two electrodes with plasma being substantially contained in an area which corresponds with one electrode of the at least two electrodes.
摘要翻译：根据本公开的各种实施例，描述了一种用于增强沉积和蚀刻技术的装置和方法，包括基座，具有至少两个嵌入基座的电极的基座，基座上方的喷头，连接到基座的等离子体气体源淋浴头，其中所述喷头被构造成将等离子体气体输送到所述喷头和所述基板之间的处理区域，以及电源，其可操作地连接到所述喷头和所述至少两个电极，其中等离子体基本上包含在对应于所述至少两个电极。

4. 发明授权

US08334015B2 Vapor based combinatorial processing 有权
标题翻译：气相组合处理
公开(公告)号：US08334015B2
公开(公告)日：2012-12-18
申请号：US12013759
申请日：2008-01-14
申请人： Tony P. Chiang , Sunil Shanker , Chi-I Lang
发明人： Tony P. Chiang , Sunil Shanker , Chi-I Lang
IPC分类号： C23C16/04
CPC分类号： C23C16/45574 , C23C16/45544 , C23C16/45548
摘要： A combinatorial processing chamber and method are provided. In the method a fluid volume flows over a surface of a substrate with differing portions of the fluid volume having different constituent components to concurrently expose segregated regions of the substrate to a mixture of the constituent components that differ from constituent components to which adjacent regions are exposed. Differently processed segregated regions are generated through the multiple flowings.
摘要翻译：提供组合处理室和方法。在该方法中，流体体积在衬底的表面上流动，具有不同部分的流体体积具有不同构成组分，以同时将衬底的偏析区域暴露于与构成组分的混合物中，所述构成组分与相邻区域暴露于其中的构成组分不同。通过多个流动产生不同处理的分离区域。

5. 发明申请

US20120090545A1 VAPOR BASED COMBINATORIAL PROCESSING 有权
标题翻译：基于蒸汽的组合加工
公开(公告)号：US20120090545A1
公开(公告)日：2012-04-19
申请号：US13332813
申请日：2011-12-21
申请人： Tony P. Chiang , Sunil Shanker , Chi-I Lang
发明人： Tony P. Chiang , Sunil Shanker , Chi-I Lang
IPC分类号： C23C16/455
CPC分类号： C23C16/45574 , C23C16/45544 , C23C16/45548
摘要： A combinatorial processing chamber and method are provided. In the method a fluid volume flows over a surface of a substrate with differing portions of the fluid volume having different constituent components to concurrently expose segregated regions of the substrate to a mixture of the constituent components that differ from constituent components to which adjacent regions are exposed. Differently processed segregated regions are generated through the multiple flowings.
摘要翻译：提供组合处理室和方法。在该方法中，流体体积在衬底的表面上流动，具有不同部分的流体体积具有不同构成组分，以同时将衬底的偏析区域暴露于与构成组分的混合物中，所述构成组分与相邻区域暴露于其中的构成组分不同。通过多个流动产生不同处理的分离区域。

6. 发明申请

US20090061083A1 VAPOR BASED COMBINATORIAL PROCESSING 有权
公开(公告)号：US20090061083A1
公开(公告)日：2009-03-05
申请号：US12013729
申请日：2008-01-14
申请人： Tony P. Chiang , Sunil Shanker , Chi-I Lang
发明人： Tony P. Chiang , Sunil Shanker , Chi-I Lang
IPC分类号： C23C16/00
CPC分类号： C23C16/45574 , C23C16/45544 , C23C16/45548
摘要： A combinatorial processing chamber and method are provided. In the method a fluid volume flows over a surface of a substrate with differing portions of the fluid volume having different constituent components to concurrently expose segregated regions of the substrate to a mixture of the constituent components that differ from constituent components to which adjacent regions are exposed. Differently processed segregated regions are generated through the multiple flowings.

7. 发明申请

US20090061644A1 VAPOR BASED COMBINATORIAL PROCESSING 有权
公开(公告)号：US20090061644A1
公开(公告)日：2009-03-05
申请号：US12013759
申请日：2008-01-14
申请人： Tony P. Chiang , Sunil Shanker , Chi I. Lang
发明人： Tony P. Chiang , Sunil Shanker , Chi I. Lang
IPC分类号： H01L21/31 , B05C11/00
CPC分类号： C23C16/45574 , C23C16/45544 , C23C16/45548
摘要： A combinatorial processing chamber and method are provided. In the method a fluid volume flows over a surface of a substrate with differing portions of the fluid volume having different constituent components to concurrently expose segregated regions of the substrate to a mixture of the constituent components that differ from constituent components to which adjacent regions are exposed. Differently processed segregated regions are generated through the multiple flowings.

8. 发明授权

US08481403B1 Flowable film dielectric gap fill process 有权
公开(公告)号：US08481403B1
公开(公告)日：2013-07-09
申请号：US12984524
申请日：2011-01-04
申请人： Vishal Gauri , Raashina Humayun , Chi-I Lang , Judy H. Huang , Michael Barnes , Sunil Shanker
发明人： Vishal Gauri , Raashina Humayun , Chi-I Lang , Judy H. Huang , Michael Barnes , Sunil Shanker
IPC分类号： H01L21/4757
CPC分类号： H01L21/31 , C23C16/045 , C23C16/401 , C23C16/56 , H01L21/02164 , H01L21/02271 , H01L21/0234 , H01L21/3121 , H01L21/3122 , H01L21/31608 , H01L21/76224
摘要： Methods of this invention relate to filling gaps on substrates with a solid dielectric material by forming a flowable film in the gap. The flowable film provides consistent, void-free gap fill. The film is then converted to a solid dielectric material. In this manner gaps on the substrate are filled with a solid dielectric material. According to various embodiments, the methods involve reacting a dielectric precursor with an oxidant to form the dielectric material. In certain embodiments, the dielectric precursor condenses and subsequently reacts with the oxidant to form dielectric material. In certain embodiments, vapor phase reactants react to form a condensed flowable film.

9. 发明授权

US07727906B1 H2-based plasma treatment to eliminate within-batch and batch-to-batch etch drift 有权
标题翻译：基于H2的等离子体处理，以消除批次间和批次间蚀刻漂移
公开(公告)号：US07727906B1
公开(公告)日：2010-06-01
申请号：US11493679
申请日：2006-07-26
申请人： Sunil Shanker , Chi-I Lang , Minh Anh Nguyen , Judy H. Huang
发明人： Sunil Shanker , Chi-I Lang , Minh Anh Nguyen , Judy H. Huang
IPC分类号： H01L21/31
CPC分类号： C23C16/045 , C23C16/4404 , C23C16/4405 , H01J37/32165 , H01L21/31604
摘要： This invention relates to electronic device fabrication for making devices such as semiconductor wafers and resolves the detrimental fluorine loading effect on deposition in the reaction chamber of a HDP CVD apparatus used for forming dielectric layers in high aspect ratio, narrow width recessed features with a repeating dep/etch/dep process. The detrimental fluorine loading effect in the chamber on deposition uniformity is reduced and wafers are provided having less deposition thickness variations by employing the method using a passivation treatment and precoating of the chamber before substrates are processed. In a preferred process, after each wafer of a batch is finished, the passivation steps are repeated. In a further preferred process, after all the wafers of a batch are finished, the passivation and precoat procedure is repeated. A preferred passivation gas is a mixture of hydrogen and oxygen.
摘要翻译：本发明涉及用于制造诸如半导体晶片的器件的电子器件制造，并且解决了用于形成具有高纵横比，窄宽度凹陷特征的电介质层的HDP CVD设备的反应室中沉积的有害氟负载效应，具有重复的dep / etch / dep进程。通过采用钝化处理的方法和在处理基板之前对涂层进行涂布，在沉积均匀性方面降低了室中对有害的氟负载效应并提供具有较小沉积厚度变化的晶片。在优选的方法中，在批次的每个晶片完成之后，重复钝化步骤。在另一优选方法中，在批料的所有晶片完成之后，重复钝化和预涂步骤。优选的钝化气体是氢和氧的混合物。

10. 发明授权

US07915139B1 CVD flowable gap fill 有权
标题翻译： CVD可流动缝隙填充
公开(公告)号：US07915139B1
公开(公告)日：2011-03-29
申请号：US12508461
申请日：2009-07-23
申请人： Chi-I Lang , Judy H. Huang , Michael Barnes , Sunil Shanker
发明人： Chi-I Lang , Judy H. Huang , Michael Barnes , Sunil Shanker
IPC分类号： H01L21/00
CPC分类号： H01L21/76837 , H01L21/02164 , H01L21/02216 , H01L21/02271 , H01L21/0234 , H01L21/31612 , H01L21/76826
摘要： The present invention meets these needs by providing improved methods of filling gaps. In certain embodiments, the methods involve placing a substrate into a reaction chamber and introducing a vapor phase silicon-containing compound and oxidant into the chamber. Reactor conditions are controlled so that the silicon-containing compound and the oxidant are made to react and condense onto the substrate. The chemical reaction causes the formation of a flowable film, in some instances containing Si—OH, Si—H and Si—O bonds. The flowable film fills gaps on the substrates. The flowable film is then converted into a silicon oxide film, for example by plasma or thermal annealing. The methods of this invention may be used to fill high aspect ratio gaps, including gaps having aspect ratios ranging from 3:1 to 10:1.
摘要翻译：本发明通过提供填充间隙的改进方法来满足这些需要。在某些实施方案中，所述方法包括将基材置于反应室中并将气相含硅化合物和氧化剂引入所述室中。控制反应器条件使得含硅化合物和氧化剂反应并冷凝到基底上。化学反应导致形成可流动的膜，在某些情况下，含有Si-OH，Si-H和Si-O键。可流动膜填充基板上的间隙。然后将可流动膜转化成氧化硅膜，例如通过等离子体或热退火。本发明的方法可用于填充高纵横比间隙，包括具有3:1至10:1的纵横比的间隙。

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