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1. 发明授权

US08481403B1 Flowable film dielectric gap fill process 有权
公开(公告)号：US08481403B1
公开(公告)日：2013-07-09
申请号：US12984524
申请日：2011-01-04
申请人： Vishal Gauri , Raashina Humayun , Chi-I Lang , Judy H. Huang , Michael Barnes , Sunil Shanker
发明人： Vishal Gauri , Raashina Humayun , Chi-I Lang , Judy H. Huang , Michael Barnes , Sunil Shanker
IPC分类号： H01L21/4757
CPC分类号： H01L21/31 , C23C16/045 , C23C16/401 , C23C16/56 , H01L21/02164 , H01L21/02271 , H01L21/0234 , H01L21/3121 , H01L21/3122 , H01L21/31608 , H01L21/76224
摘要： Methods of this invention relate to filling gaps on substrates with a solid dielectric material by forming a flowable film in the gap. The flowable film provides consistent, void-free gap fill. The film is then converted to a solid dielectric material. In this manner gaps on the substrate are filled with a solid dielectric material. According to various embodiments, the methods involve reacting a dielectric precursor with an oxidant to form the dielectric material. In certain embodiments, the dielectric precursor condenses and subsequently reacts with the oxidant to form dielectric material. In certain embodiments, vapor phase reactants react to form a condensed flowable film.

2. 发明授权

US07888233B1 Flowable film dielectric gap fill process 有权
标题翻译：可流动薄膜电介质间隙填充工艺
公开(公告)号：US07888233B1
公开(公告)日：2011-02-15
申请号：US12411243
申请日：2009-03-25
申请人： Vishal Gauri , Raashina Humayun , Chi-I Lang , Judy H. Huang , Michael Barnes , Sunil Shanker
发明人： Vishal Gauri , Raashina Humayun , Chi-I Lang , Judy H. Huang , Michael Barnes , Sunil Shanker
IPC分类号： H01L21/4757
CPC分类号： H01L21/31 , C23C16/045 , C23C16/401 , C23C16/56 , H01L21/02164 , H01L21/02271 , H01L21/0234 , H01L21/3121 , H01L21/3122 , H01L21/31608 , H01L21/76224
摘要： Methods of this invention relate to filling gaps on substrates with a solid dielectric material by forming a flowable film in the gap. The flowable film provides consistent, void-free gap fill. The film is then converted to a solid dielectric material. In this manner gaps on the substrate are filled with a solid dielectric material. According to various embodiments, the methods involve reacting a dielectric precursor with an oxidant to form the dielectric material. In certain embodiments, the dielectric precursor condenses and subsequently reacts with the oxidant to form dielectric material. In certain embodiments, vapor phase reactants react to form a condensed flowable film.
摘要翻译：本发明的方法涉及通过在间隙中形成可流动的膜来填充具有固体电介质材料的衬底上的间隙。可流动膜提供一致的，无空隙的间隙填充。然后将膜转化成固体电介质材料。以这种方式，用固体电介质材料填充衬底上的间隙。根据各种实施方案，所述方法包括使电介质前体与氧化剂反应以形成电介质材料。在某些实施方案中，电介质前体冷凝并随后与氧化剂反应以形成电介质材料。在某些实施方案中，气相反应物反应形成冷凝的可流动的膜。

3. 发明授权

US07582555B1 CVD flowable gap fill 有权
标题翻译： CVD可流动缝隙填充
公开(公告)号：US07582555B1
公开(公告)日：2009-09-01
申请号：US11323812
申请日：2005-12-29
申请人： Chi-I Lang , Judy H. Huang , Michael Barnes , Sunil Shanker
发明人： Chi-I Lang , Judy H. Huang , Michael Barnes , Sunil Shanker
IPC分类号： H01L21/4763
CPC分类号： H01L21/76837 , H01L21/02164 , H01L21/02216 , H01L21/02271 , H01L21/0234 , H01L21/31612 , H01L21/76826
摘要： The present invention meets these needs by providing improved methods of filling gaps. In certain embodiments, the methods involve placing a substrate into a reaction chamber and introducing a vapor phase silicon-containing compound and oxidant into the chamber. Reactor conditions are controlled so that the silicon-containing compound and the oxidant are made to react and condense onto the substrate. The chemical reaction causes the formation of a flowable film, in some instances containing Si—OH, Si—H and Si—O bonds. The flowable film fills gaps on the substrates. The flowable film is then converted into a silicon oxide film, for example by plasma or thermal annealing. The methods of this invention may be used to fill high aspect ratio gaps, including gaps having aspect ratios ranging from 3:1 to 10:1.
摘要翻译：本发明通过提供填充间隙的改进方法来满足这些需要。在某些实施方案中，所述方法包括将基材置于反应室中并将气相含硅化合物和氧化剂引入所述室中。控制反应器条件使得含硅化合物和氧化剂反应并冷凝到基底上。化学反应导致形成可流动的膜，在某些情况下，含有Si-OH，Si-H和Si-O键。可流动膜填充基板上的间隙。然后将可流动膜转化成氧化硅膜，例如通过等离子体或热退火。本发明的方法可用于填充高纵横比间隙，包括具有3:1至10:1的纵横比的间隙。

4. 发明授权

US08580697B1 CVD flowable gap fill 有权
公开(公告)号：US08580697B1
公开(公告)日：2013-11-12
申请号：US13031077
申请日：2011-02-18
申请人： Chi-I Lang , Judy H. Huang , Michael Barnes , Sunil Shanker
发明人： Chi-I Lang , Judy H. Huang , Michael Barnes , Sunil Shanker
IPC分类号： H01L21/02
CPC分类号： H01L21/76837 , H01L21/02164 , H01L21/02216 , H01L21/02271 , H01L21/0234 , H01L21/31612 , H01L21/76826
摘要： The present invention meets these needs by providing improved methods of filling gaps. In certain embodiments, the methods involve placing a substrate into a reaction chamber and introducing a vapor phase silicon-containing compound and oxidant into the chamber. Reactor conditions are controlled so that the silicon-containing compound and the oxidant are made to react and condense onto the substrate. The chemical reaction causes the formation of a flowable film, in some instances containing Si—OH, Si—H and Si—O bonds. The flowable film fills gaps on the substrates. The flowable film is then converted into a silicon oxide film, for example by plasma or thermal annealing. The methods of this invention may be used to fill high aspect ratio gaps, including gaps having aspect ratios ranging from 3:1 to 10:1.

5. 发明授权

US07915139B1 CVD flowable gap fill 有权
标题翻译： CVD可流动缝隙填充
公开(公告)号：US07915139B1
公开(公告)日：2011-03-29
申请号：US12508461
申请日：2009-07-23
申请人： Chi-I Lang , Judy H. Huang , Michael Barnes , Sunil Shanker
发明人： Chi-I Lang , Judy H. Huang , Michael Barnes , Sunil Shanker
IPC分类号： H01L21/00
CPC分类号： H01L21/76837 , H01L21/02164 , H01L21/02216 , H01L21/02271 , H01L21/0234 , H01L21/31612 , H01L21/76826
摘要： The present invention meets these needs by providing improved methods of filling gaps. In certain embodiments, the methods involve placing a substrate into a reaction chamber and introducing a vapor phase silicon-containing compound and oxidant into the chamber. Reactor conditions are controlled so that the silicon-containing compound and the oxidant are made to react and condense onto the substrate. The chemical reaction causes the formation of a flowable film, in some instances containing Si—OH, Si—H and Si—O bonds. The flowable film fills gaps on the substrates. The flowable film is then converted into a silicon oxide film, for example by plasma or thermal annealing. The methods of this invention may be used to fill high aspect ratio gaps, including gaps having aspect ratios ranging from 3:1 to 10:1.
摘要翻译：本发明通过提供填充间隙的改进方法来满足这些需要。在某些实施方案中，所述方法包括将基材置于反应室中并将气相含硅化合物和氧化剂引入所述室中。控制反应器条件使得含硅化合物和氧化剂反应并冷凝到基底上。化学反应导致形成可流动的膜，在某些情况下，含有Si-OH，Si-H和Si-O键。可流动膜填充基板上的间隙。然后将可流动膜转化成氧化硅膜，例如通过等离子体或热退火。本发明的方法可用于填充高纵横比间隙，包括具有3:1至10:1的纵横比的间隙。

6. 发明授权

US07524735B1 Flowable film dielectric gap fill process 有权
标题翻译：可流动薄膜电介质间隙填充工艺
公开(公告)号：US07524735B1
公开(公告)日：2009-04-28
申请号：US11447594
申请日：2006-06-05
申请人： Vishal Gauri , Raashina Humayun , Chi-I Lang , Judy H. Huang , Michael Barnes , Sunil Shanker
发明人： Vishal Gauri , Raashina Humayun , Chi-I Lang , Judy H. Huang , Michael Barnes , Sunil Shanker
IPC分类号： H01L21/762
CPC分类号： H01L21/31 , C23C16/045 , C23C16/401 , C23C16/56 , H01L21/02164 , H01L21/02271 , H01L21/0234 , H01L21/3121 , H01L21/3122 , H01L21/31608 , H01L21/76224
摘要： Methods of this invention relate to filling gaps on substrates with a solid dielectric material by forming a flowable film in the gap. The flowable film provides consistent, void-free gap fill. The film is then converted to a solid dielectric material. In this manner gaps on the substrate are filled with a solid dielectric material. According to various embodiments, the methods involve reacting a dielectric precursor with an oxidant to form the dielectric material. In certain embodiments, the dielectric precursor condenses and subsequently reacts with the oxidant to form dielectric material. In certain embodiments, vapor phase reactants react to form a condensed flowable film.
摘要翻译：本发明的方法涉及通过在间隙中形成可流动的膜来填充具有固体电介质材料的衬底上的间隙。可流动膜提供一致的，无空隙的间隙填充。然后将膜转化成固体电介质材料。以这种方式，用固体电介质材料填充衬底上的间隙。根据各种实施方案，所述方法包括使电介质前体与氧化剂反应以形成电介质材料。在某些实施方案中，电介质前体冷凝并随后与氧化剂反应以形成电介质材料。在某些实施方案中，气相反应物反应形成冷凝的可流动的膜。

7. 发明授权

US07727906B1 H2-based plasma treatment to eliminate within-batch and batch-to-batch etch drift 有权
标题翻译：基于H2的等离子体处理，以消除批次间和批次间蚀刻漂移
公开(公告)号：US07727906B1
公开(公告)日：2010-06-01
申请号：US11493679
申请日：2006-07-26
申请人： Sunil Shanker , Chi-I Lang , Minh Anh Nguyen , Judy H. Huang
发明人： Sunil Shanker , Chi-I Lang , Minh Anh Nguyen , Judy H. Huang
IPC分类号： H01L21/31
CPC分类号： C23C16/045 , C23C16/4404 , C23C16/4405 , H01J37/32165 , H01L21/31604
摘要： This invention relates to electronic device fabrication for making devices such as semiconductor wafers and resolves the detrimental fluorine loading effect on deposition in the reaction chamber of a HDP CVD apparatus used for forming dielectric layers in high aspect ratio, narrow width recessed features with a repeating dep/etch/dep process. The detrimental fluorine loading effect in the chamber on deposition uniformity is reduced and wafers are provided having less deposition thickness variations by employing the method using a passivation treatment and precoating of the chamber before substrates are processed. In a preferred process, after each wafer of a batch is finished, the passivation steps are repeated. In a further preferred process, after all the wafers of a batch are finished, the passivation and precoat procedure is repeated. A preferred passivation gas is a mixture of hydrogen and oxygen.
摘要翻译：本发明涉及用于制造诸如半导体晶片的器件的电子器件制造，并且解决了用于形成具有高纵横比，窄宽度凹陷特征的电介质层的HDP CVD设备的反应室中沉积的有害氟负载效应，具有重复的dep / etch / dep进程。通过采用钝化处理的方法和在处理基板之前对涂层进行涂布，在沉积均匀性方面降低了室中对有害的氟负载效应并提供具有较小沉积厚度变化的晶片。在优选的方法中，在批次的每个晶片完成之后，重复钝化步骤。在另一优选方法中，在批料的所有晶片完成之后，重复钝化和预涂步骤。优选的钝化气体是氢和氧的混合物。

8. 发明授权

US07211525B1 Hydrogen treatment enhanced gap fill 有权
标题翻译：氢处理增强间隙填充
公开(公告)号：US07211525B1
公开(公告)日：2007-05-01
申请号：US11082369
申请日：2005-03-16
申请人： Sunil Shanker , Sean Cox , Chi-I Lang , Judy H. Huang , Minh Anh Nguyen , Ken Vo , Wenxian Zhu
发明人： Sunil Shanker , Sean Cox , Chi-I Lang , Judy H. Huang , Minh Anh Nguyen , Ken Vo , Wenxian Zhu
IPC分类号： H01L21/469 , H01L21/31
CPC分类号： H01L21/31612 , C23C16/0245 , H01L21/02164 , H01L21/02274 , H01L21/0228 , H01L21/02315 , H01L21/76224 , H01L21/76837
摘要： Methods of filling gaps on semiconductor substrates with dielectric film are described. The methods reduce or eliminate sidewall deposition and top-hat formation. The methods also reduce or eliminate the need for etch steps during dielectric film deposition. The methods include treating a semiconductor substrate with a hydrogen plasma before depositing dielectric film on the substrate. In some embodiments, the hydrogen treatment is used is conjunction with a high rate deposition process.
摘要翻译：描述了用绝缘膜填充半导体衬底上的间隙的方法。该方法减少或消除侧壁沉积和顶帽形成。在电介质膜沉积期间，这些方法还减少或消除了蚀刻步骤的需要。所述方法包括在沉积介质膜之前用氢等离子体处理半导体衬底。在一些实施方案中，使用氢处理与高速沉积工艺相结合。

9. 发明授权

US08440259B2 Vapor based combinatorial processing 有权
公开(公告)号：US08440259B2
公开(公告)日：2013-05-14
申请号：US12013729
申请日：2008-01-14
申请人： Tony P. Chiang , Sunil Shanker , Chi-I Lang
发明人： Tony P. Chiang , Sunil Shanker , Chi-I Lang
IPC分类号： C23C16/00
CPC分类号： C23C16/45574 , C23C16/45544 , C23C16/45548
摘要： A combinatorial processing chamber and method are provided. In the method a fluid volume flows over a surface of a substrate with differing portions of the fluid volume having different constituent components to concurrently expose segregated regions of the substrate to a mixture of the constituent components that differ from constituent components to which adjacent regions are exposed. Differently processed segregated regions are generated through the multiple flowings.

10. 发明申请

US20110244690A1 COMBINATORIAL PLASMA ENHANCED DEPOSITION AND ETCH TECHNIQUES 有权
标题翻译：组合等离子体增强沉积和蚀刻技术
公开(公告)号：US20110244690A1
公开(公告)日：2011-10-06
申请号：US12963995
申请日：2010-12-09
申请人： Sunil Shanker , Tony P. Chiang , Chi-I Lang
发明人： Sunil Shanker , Tony P. Chiang , Chi-I Lang
IPC分类号： H01L21/311 , H01L21/02
CPC分类号： H01L21/02274 , C23C16/0227 , C23C16/44 , C23C16/45523 , C23C16/45525 , C23C16/45536 , C23C16/45548 , C23C16/45565 , C23C16/45574 , C23C16/4586 , C23C16/509 , C23C16/5096 , H01J37/32091 , H01J37/3244 , H01J37/32532 , H01J37/32541 , H01J37/32568 , H01J37/32715 , H01J37/32779 , H01L21/3065 , H01L21/67069
摘要： According to various embodiments of the disclosure, an apparatus and method for enhanced deposition and etch techniques is described, including a pedestal, the pedestal having at least two electrodes embedded in the pedestal, a showerhead above the pedestal, a plasma gas source connected to the showerhead, wherein the showerhead is configured to deliver plasma gas to a processing region between the showerhead and the substrate and a power source operably connected to the showerhead and the at least two electrodes with plasma being substantially contained in an area which corresponds with one electrode of the at least two electrodes.
摘要翻译：根据本公开的各种实施例，描述了一种用于增强沉积和蚀刻技术的装置和方法，包括基座，具有至少两个嵌入基座的电极的基座，基座上方的喷头，连接到基座的等离子体气体源淋浴头，其中所述喷头被构造成将等离子体气体输送到所述喷头和所述基板之间的处理区域，以及电源，其可操作地连接到所述喷头和所述至少两个电极，其中等离子体基本上包含在对应于所述至少两个电极。

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