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1. 发明授权

US07382030B1 Integrated metal shield for a field effect transistor 有权
标题翻译：用于场效应晶体管的集成金属屏蔽
公开(公告)号：US07382030B1
公开(公告)日：2008-06-03
申请号：US11459829
申请日：2006-07-25
申请人： Tony Ivanov , Michael Carroll , Triet Dinh , Julio Costa
发明人： Tony Ivanov , Michael Carroll , Triet Dinh , Julio Costa
IPC分类号： H01L29/78
CPC分类号： H01L29/7835 , H01L29/1045 , H01L29/402 , H01L29/41775 , H01L29/66659
摘要： The present invention relates to a semiconductor device having an integrated metal shield. The shield, created as part of a MOSFET, is formed about a gate electrode of the MOSFET to effectively reduce drain-to-gate capacitance and increase breakdown voltage. The shield consists of a metallic shield contact via and a source contact extension. The metallic shield contact via, formed between the gate electrode and a drain region of the MOSFET, may be either a series of closely spaced vias or a wide continuous via. The metallic shield contact via is isolated from the surface of a semiconductor wafer by a shield isolation layer at one end. The metallic shield contact via is electrically coupled to the source contact extension at the other end. The source contact extension is metallic, and may be formed from the same metal used to create a source contact and a drain contact for the MOSFET.
摘要翻译：本发明涉及具有集成金属屏蔽的半导体器件。围绕MOSFET的栅极电极形成作为MOSFET的一部分而形成的屏蔽层，以有效地降低漏极 - 栅极电容并增加击穿电压。屏蔽由金属屏蔽触点通孔和源触点延伸部组成。形成在MOSFET的栅极电极和漏极区域之间的金属屏蔽接触通孔可以是一系列紧密间隔的通孔或宽的连续通孔。金属屏蔽接触通孔通过一端的屏蔽隔离层与半导体晶片的表面隔离。金属屏蔽接触通孔在另一端电耦合到源极接触延伸部。源极接触延伸部是金属的，并且可以由用于产生MOSFET的源极接触和漏极接触的相同金属形成。

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