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1. 发明授权

US09250531B2 Method of forming resist pattern and negative tone-development resist composition 有权
标题翻译：形成抗蚀剂图案和负色调显影抗蚀剂组合物的方法
公开(公告)号：US09250531B2
公开(公告)日：2016-02-02
申请号：US14003708
申请日：2012-03-07
申请人： Tomoyuki Hirano , Daichi Takaki , Daiju Shiono , Kenri Konno , Isamu Takagi
发明人： Tomoyuki Hirano , Daichi Takaki , Daiju Shiono , Kenri Konno , Isamu Takagi
IPC分类号： G03F7/004 , G03F7/38 , C08F220/24 , C08F224/00 , C08F226/02 , C08F228/06 , G03F7/32 , C08F220/28 , C08F220/38 , G03F7/039 , G03F7/20
CPC分类号： G03F7/325 , C08F220/24 , C08F220/28 , C08F220/38 , C08F224/00 , C08F226/02 , C08F228/06 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/2041
摘要： A method of forming a resist pattern including: forming a resist film on a substrate using a resist composition containing a base component (A) which exhibits decreased solubility in an organic solvent by action of an acid; exposing the resist film; and patterning by a negative-tone development using a developing solution containing the organic solvent, wherein the base component (A) contains a resin component (A1) having a structural unit (a0) which generates acid upon exposure and a structural unit (a1) derived from an acrylate ester which may have the hydrogen atom bonded to the carbon atom on the α-position substituted with a substituent and contains an acid decomposable group which exhibits increased polarity by the action of acid, and the developing solution contains a nitrile solvent.
摘要翻译：一种形成抗蚀剂图案的方法，包括：使用含有通过酸作用在有机溶剂中溶解度降低的基础组分（A）的抗蚀剂组合物在基材上形成抗蚀剂膜; 曝光抗蚀膜; 以及使用含有有机溶剂的显影液进行负色发展的图案化，其中，所述基材（A）含有具有曝光时产生酸的结构单元（a0）的树脂成分（A1）和结构单元（a1）衍生自可以具有与被取代基取代的在α-位上的碳原子键合的氢原子的丙烯酸酯，并且含有通过酸作用显示出极性增加的酸分解基团，显影液含有腈溶剂。

2. 发明授权

US08916332B2 Resist composition, method of forming resist pattern, and polymeric compound 有权
标题翻译：抗蚀剂组合物，形成抗蚀剂图案的方法和聚合物
公开(公告)号：US08916332B2
公开(公告)日：2014-12-23
申请号：US13441200
申请日：2012-04-06
申请人： Makiko Irie , Tomoyuki Hirano , Daichi Takaki
发明人： Makiko Irie , Tomoyuki Hirano , Daichi Takaki
IPC分类号： C08F24/00 , C08F224/00 , G03F7/004 , G03F7/027 , G03F7/039 , C08F228/06 , G03F7/20
CPC分类号： G03F7/0397 , C08F224/00 , C08F228/06 , G03F7/2041
摘要： A resist composition including a base component (A) which exhibits changed solubility in a developing solution under the action of acid and an acid-generator component (B) which generates acid upon exposure, the base component (A) containing a resin component (A1) including a structural unit (a0) represented by general formula (a0-1) shown below and a structural unit derived from an acrylate ester which may have the hydrogen atom bonded to the carbon atom on the α-position substituted with a substituent and contains an acid decomposable group which exhibits increased polarity by the action of acid (wherein R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms).
摘要翻译：一种抗蚀剂组合物，其包含在酸的作用下在显影液中显示改变的溶解度的碱成分（A）和曝光时产生酸的酸发生剂成分（B），含有树脂成分（A1 ）包括由下述通式（a0-1）表示的结构单元（a0）和衍生自可以具有与被取代基取代的被取代基取代的在α-位上的碳原子键合的丙烯酸酯的结构单元，并且含有通过酸（其中R表示氢原子，1〜5个碳原子的烷基或1〜5个碳原子的卤代烷基）的作用而显示出极性增加的酸可分解基团。

3. 发明授权

US08501387B2 Resist composition for immersion exposure, method of forming resist pattern using the same, and fluorine-containing compound 有权
公开(公告)号：US08501387B2
公开(公告)日：2013-08-06
申请号：US13310625
申请日：2011-12-02
申请人： Daiju Shiono , Takahiro Dazai , Sanae Furuya , Tomoyuki Hirano , Takayoshi Mori
发明人： Daiju Shiono , Takahiro Dazai , Sanae Furuya , Tomoyuki Hirano , Takayoshi Mori
IPC分类号： G03F7/004 , G03F7/028 , G03F7/033 , G03F7/039 , G03F7/26
摘要： A resist composition for immersion exposure, including a base component that exhibits changed solubility in an alkali developing solution under action of acid, an acid generator component that generates acid upon exposure, and a fluorine-containing compound represented by a general formula (c-1) that is decomposable in an alkali developing solution: wherein R1 represents an organic group which may contain a polymerizable group, with the proviso that said polymerizable group has a carbon-carbon multiple bond, and the carbon atoms forming the multiple bond are not directly bonded to the carbon atom within the —C(═O)— group in general formula (c-1); and R2 represents an organic group having a fluorine atom.

4. 发明授权

US08268529B2 Positive resist composition, method of forming resist pattern using the same, and polymeric compound 有权
标题翻译：正型抗蚀剂组合物，使用其形成抗蚀剂图案的方法和聚合物
公开(公告)号：US08268529B2
公开(公告)日：2012-09-18
申请号：US12687430
申请日：2010-01-14
申请人： Takahiro Dazai , Daiju Shiono , Tomoyuki Hirano , Tasuku Matsumiya , Masaru Takeshita
发明人： Takahiro Dazai , Daiju Shiono , Tomoyuki Hirano , Tasuku Matsumiya , Masaru Takeshita
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30 , C08F28/06
CPC分类号： C08F220/26 , C08F228/06 , G03F7/0045 , G03F7/0397
摘要： A positive resist composition including a base component (A) which exhibits changed solubility in an alkali developing solution under the action of acid and an acid-generator component (B) which generates acid upon exposure dissolved in an organic solvent (S), the base component (A) containing a polymeric compound (A1) including a structural unit (a0) derived from an acrylate ester having a cyclic group containing a sulfonyl group on the side chain thereof, a structural unit (a1) derived from an acrylate ester containing an acid dissociable, dissolution inhibiting group and a structural unit (a5) represented by general formula (a5-1) (Y1 represents an aliphatic hydrocarbon group; Z represents a monovalent organic group; a represents an integer of 1 to 3, and b represents an integer of 0 to 2, provided that a+b=1 to 3).
摘要翻译：一种正性抗蚀剂组合物，其包含在碱的作用下在碱性显影液中的溶解度变化的碱成分（A）和暴露于有机溶剂（S）时产生酸的酸产生剂成分（B），所述碱含有由侧链上具有含有磺酰基的环状基团的丙烯酸酯衍生的结构单元（a0）的高分子化合物（A1）的组分（A），来源于丙烯酸酯的结构单元（a1）酸解离，溶解抑制基团和由通式（a5-1）表示的结构单元（a5）（Y1表示脂族烃基; Z表示一价有机基团; a表示1〜3的整数，b表示 0〜2的整数，条件是a + b = 1〜3）。

5. 发明授权

US08182976B2 Positive resist composition, method of forming resist pattern, and polymeric compound 有权
标题翻译：正型抗蚀剂组合物，形成抗蚀剂图案的方法和聚合物
公开(公告)号：US08182976B2
公开(公告)日：2012-05-22
申请号：US12461688
申请日：2009-08-20
申请人： Takahiro Dazai , Tomoyuki Hirano , Daiju Shiono , Tasuku Matsumiya
发明人： Takahiro Dazai , Tomoyuki Hirano , Daiju Shiono , Tasuku Matsumiya
IPC分类号： G03F7/028 , G03F7/038 , G03F7/28 , C08F22/10 , C08F22/20 , C08F22/24
CPC分类号： G03F7/0397 , C08F28/06 , C08F220/28 , C08F228/06 , G03F7/0045 , G03F7/2041
摘要： A positive resist composition including a base component (A) which exhibits increased solubility in an alkali developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the resin component (A) including at least one structural unit (a0) selected from the group consisting of a structural unit represented by general formula (a0-1) [R2 represents a divalent linking group, and R3 represents a cyclic group containing —SO2— within the ring skeleton thereof] and a structural unit (a2) derived from an acrylate ester containing a lactone-containing cyclic group, and the polymeric compound (A1) containing an acid dissociable, dissolution inhibiting group within the structure thereof.
摘要翻译：一种正性抗蚀剂组合物，其包含在酸的作用下在碱性显影液中显示出增加的溶解度的碱成分（A）和曝光时产生酸的酸发生剂成分（B），所述树脂成分（A）包含至少一种结构单元（a0）选自由通式（a0-1）表示的结构单元[R2表示二价连接基团，R 3表示在其环骨架中含有-SO 2的环状基团]和结构单元（a2）和含有含内酯的环状基团的丙烯酸酯衍生的聚合化合物（A1）和在其结构内含有酸解离性，溶解抑制基团的高分子化合物（A1）。

6. 发明申请

US20110237014A1 METHOD FOR MANUFACTURING SOLID-STATE IMAGING DEVICE 失效
标题翻译：制造固态成像装置的方法
公开(公告)号：US20110237014A1
公开(公告)日：2011-09-29
申请号：US13153941
申请日：2011-06-06
申请人： Susumu Hiyama , Tomoyuki Hirano
发明人： Susumu Hiyama , Tomoyuki Hirano
IPC分类号： H01L31/18
CPC分类号： H01L27/14601 , H01L27/14603 , H01L27/1462 , H01L27/14685 , H01L27/14689
摘要： A method for manufacturing a solid-state imaging device in which a charge generator that detects an electromagnetic wave and generates signal charges is formed on a semiconductor substrate and a negative-charge accumulated layer having negative fixed charges is formed above a detection plane of the charge generator. The method includes the steps of: forming an oxygen-feed film capable of feeding oxygen on the detection plane of the charge generator; forming a metal film that covers the oxygen-feed film on the detection plane of the charge generator; and performing heat treatment for the metal film in an inactive atmosphere to thereby form an oxide of the metal film between the metal film and the oxygen-feed film on the detection plane of the charge generator, the oxide being to serve as the negative-charge accumulated layer.
摘要翻译：一种制造固态成像装置的方法，其中在半导体衬底上形成检测电磁波并产生信号电荷的电荷产生器，并且在电荷的检测平面上方形成具有负固定电荷的负电荷累积层发电机。该方法包括以下步骤：在电荷发生器的检测面上形成能够供给氧的氧供给膜; 形成覆盖所述电荷发生器的检测面上的氧供给膜的金属膜; 在惰性气氛中对金属膜进行热处理，从而在电荷发生器的检测面上形成金属膜与氧气供给膜之间的金属膜的氧化物，氧化物用作负电荷累积层

7. 发明授权

US07968365B2 Method for manufacturing solid-state imaging device 有权
标题翻译：固态成像装置的制造方法
公开(公告)号：US07968365B2
公开(公告)日：2011-06-28
申请号：US12364130
申请日：2009-02-02
申请人： Susumu Hiyama , Tomoyuki Hirano
发明人： Susumu Hiyama , Tomoyuki Hirano
IPC分类号： H01L31/06 , H01L31/0216
CPC分类号： H01L27/14601 , H01L27/14603 , H01L27/1462 , H01L27/14685 , H01L27/14689
摘要： A method for manufacturing a solid-state imaging device in which a charge generator that detects an electromagnetic wave and generates signal charges is formed on a semiconductor substrate and a negative-charge accumulated layer having negative fixed charges is formed above a detection plane of the charge generator, the method includes the steps of: forming an oxygen-feed film capable of feeding oxygen on the detection plane of the charge generator; forming a metal film that covers the oxygen-feed film on the detection plane of the charge generator; and performing heat treatment for the metal film in an inactive atmosphere to thereby form an oxide of the metal film between the metal film and the oxygen-feed film on the detection plane of the charge generator, the oxide being to serve as the negative-charge accumulated layer.
摘要翻译：一种制造固态成像装置的方法，其中在半导体衬底上形成检测电磁波并产生信号电荷的电荷产生器，并且在电荷的检测平面上方形成具有负固定电荷的负电荷累积层该方法包括以下步骤：形成能够在电荷产生器的检测平面上供氧的氧气进料膜; 形成覆盖所述电荷发生器的检测面上的氧供给膜的金属膜; 在惰性气氛中对金属膜进行热处理，从而在电荷发生器的检测面上形成金属膜与氧气供给膜之间的金属膜的氧化物，氧化物用作负电荷累积层

8. 发明授权

US07914967B2 Fluorine-containing compound, resist composition for immersion exposure, and method of forming resist pattern 有权
标题翻译：含氟化合物，浸渍曝光用抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US07914967B2
公开(公告)日：2011-03-29
申请号：US12184566
申请日：2008-08-01
申请人： Sanae Furuya , Takayoshi Mori , Takahiro Dazai , Ryoichi Takasu , Tomoyuki Hirano
发明人： Sanae Furuya , Takayoshi Mori , Takahiro Dazai , Ryoichi Takasu , Tomoyuki Hirano
IPC分类号： G03F7/00 , G03F7/004
CPC分类号： C07C69/63 , C08F8/14 , C08F12/20 , C08F12/22 , C08F112/14 , C08F220/24 , C08F220/28 , C08F2220/302 , C09D125/18 , G03F7/0046 , G03F7/0397 , G03F7/2041 , Y10S430/106 , Y10S430/146 , C08F12/24
摘要： A resist composition for immersion exposure including a base component (A) which exhibits changed solubility in an alkali developing solution under action of acid, an acid-generator component (B) which generates acid upon irradiation, and a fluorine-containing compound (C) having a group represented by general formula (c) shown below and containing at least one fluorine atom: wherein Q represents a group in which one hydrogen atom has been removed from a monovalent hydrophilic group; and R1 represents a hydrocarbon group of 2 or more carbon atoms which may have a fluorine atom.
摘要翻译：一种用于浸渍曝光的抗蚀剂组合物，包括在酸作用下在碱性显影液中显示出改变的溶解性的基础组分（A），在照射时产生酸的酸产生剂组分（B）和含氟化合物（C）具有下述通式（c）所示的基团，并且含有至少一个氟原子：其中Q表示从单价亲水基团除去一个氢原子的基团; 并且R 1表示可以具有氟原子的2个以上碳原子的烃基。

9. 发明申请

US20090280431A1 MATERIAL FOR PROTECTIVE FILM FORMATION, AND METHOD FOR PHOTORESIST PATTERN FORMATION USING THE SAME 审中-公开
标题翻译：用于保护膜形成的材料，以及使用其形成光电子图案的方法
公开(公告)号：US20090280431A1
公开(公告)日：2009-11-12
申请号：US12066127
申请日：2006-09-08
申请人： Tomoyuki Hirano , Kotaro Endo , Keita Ishiduka
发明人： Tomoyuki Hirano , Kotaro Endo , Keita Ishiduka
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/11 , G03F7/2041
摘要： To provide a material for protective film formation that can simultaneously prevent a change in quality of a resist film during liquid immersion exposure and a change in quality of a liquid for liquid immersion exposure used, and, at the same time, can form a resist pattern having a good shape without increasing the number of treatment steps. A material for protective film formation, comprising at least an alkali-soluble polymer comprising constitutional units represented by general formula (1): wherein R1 represents a hydrogen atom or a methyl group; R2 represents an alkylene chain having 1 to 5 carbon atoms; R3 represents a fluorinated alkylene chain having 1 to 10 carbon atoms in which a part or all of hydrogen atoms have been substituted by a fluorine atom; and m is a repeating unit.
摘要翻译：为了提供可以同时防止浸液曝光期间抗蚀剂膜的质量变化和用于液浸曝光的液体的质量变化的保护膜形成材料，并且同时可以形成抗蚀剂图案具有良好的形状而不增加治疗步骤的数量。一种用于保护膜形成的材料，至少包含含有由通式（1）表示的结构单元的碱溶性聚合物：其中R1表示氢原子或甲基; R2表示碳原子数为1〜5的亚烷基链; R3表示其中一部分或全部氢原子被氟原子取代的碳原子数1〜10的氟化亚烷基链; m是重复单元。

10. 发明申请

US20090186300A1 RESIST COMPOSITION FOR LIQUID IMMERSION LITHOGRAPHY, METHOD OF FORMING RESIST PATTERN, AND FLUORINE-CONTAINING COPOLYMER 审中-公开
标题翻译：用于液体渗透光刻的耐蚀组合物，形成耐蚀图案的方法和含氟聚合物
公开(公告)号：US20090186300A1
公开(公告)日：2009-07-23
申请号：US12348780
申请日：2009-01-05
申请人： Sanae Furuya , Takahiro Dazai , Takayoshi Mori , Daiju Shiono , Tomoyuki Hirano
发明人： Sanae Furuya , Takahiro Dazai , Takayoshi Mori , Daiju Shiono , Tomoyuki Hirano
IPC分类号： G03C1/053 , G03F7/26 , C08F220/22
CPC分类号： G03F7/2041 , G03F7/0046 , G03F7/0397
摘要： A resist composition for immersion exposure including a base component (A) that exhibits changed solubility in an alkali developing solution under the action of acid, an acid generator component (B) that generates acid upon exposure, and a fluorine-containing copolymer (C) containing a structural unit (c1) represented by general formula (c1-1) shown below. In the formula, R1 represents a hydrogen atom, a lower alkyl group or a halogenated lower alkyl group, Q1 represents a single bond or a divalent linking group, A represents an aromatic cyclic group that may have a substituent, Q2 represents a group in which one hydrogen atom has been removed from a monovalent hydrophilic group, R2 represents a base dissociable group, and a represents 1 or 2, provided that at least one among A and the a R2 groups contains a fluorine atom.
摘要翻译：一种用于浸渍曝光的抗蚀剂组合物，包括在酸性作用下在碱性显影液中显示出改变的溶解性的基础组分（A），暴露时产生酸的酸产生剂组分（B）和含氟共聚物（C）含有下述通式（c1-1）表示的结构单元（c1）。在该式中，R1表示氢原子，低级烷基或卤代低级烷基，Q1表示单键或二价连接基团，A表示可具有取代基的芳香族环状基团，Q2表示其中一个氢原子从单价亲水基团除去，R2表示碱可解离基团，a表示1或2，条件是A和A 2中的至少一个含有氟原子。

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