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1. 发明授权

US06682991B1 Growth method of a nitride III-V compound semiconductor, manufacturing method of a semiconductor device, and semiconductor device 有权
标题翻译：氮化物III-V族化合物半导体的生长方法，半导体装置的制造方法以及半导体装置
公开(公告)号：US06682991B1
公开(公告)日：2004-01-27
申请号：US09448584
申请日：1999-11-24
申请人： Tomonori Hino , Takeharu Asano , Tsunenori Asatsuma , Satoru Kijima , Kenji Funato , Shigetaka Tomiya
发明人： Tomonori Hino , Takeharu Asano , Tsunenori Asatsuma , Satoru Kijima , Kenji Funato , Shigetaka Tomiya
IPC分类号： H01L2120
CPC分类号： H01L21/02378 , H01L21/02381 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/0332 , H01S5/2077 , H01S5/32341
摘要： When making a growth mask on a substrate and using the growth mask to selectively grow nitride III-V compound semiconductors on the substrate, a multi-layered film including a nitride forming at least its top surface is used as the growth mask. The growth mask may be combination of an oxide film and a nitride film thereon, combination of a metal film and a nitride film thereon, combination of an oxide film, a film thereon made up of a nitride and an oxide, and a nitride film thereon, or combination of a first metal film, a second metal film thereon different from the first metal film and a nitride film thereon, for example. The oxide film may be a Si02, for example, the nitride film may be a TiN film or a SiN film, the film made up of a nitride and an oxide may be a SiNO film, and the metal film may be a Ti film or a Pt film, for example.
摘要翻译：当在衬底上制造生长掩模并且使用生长掩模在衬底上选择性地生长氮化物III-V化合物半导体时，使用包括至少形成其顶表面的氮化物的多层膜作为生长掩模。生长掩模可以是其上的氧化物膜和氮化物膜的组合，其上的金属膜和氮化物膜的组合，氧化物膜，由氮化物和氧化物组成的膜以及氮化物膜上的氮化物膜的组合，或第一金属膜，与第一金属膜不同的第二金属膜和其上的氮化物膜的组合。氧化膜可以是SiO 2，例如，氮化膜可以是TiN膜或SiN膜，由氮化物和氧化物构成的膜可以是SiNO膜，并且金属膜可以是Ti膜或例如Pt膜。

2. 发明授权

US06620641B2 Semiconductor light emitting device and its manufacturing method 失效
公开(公告)号：US06620641B2
公开(公告)日：2003-09-16
申请号：US10172839
申请日：2002-06-17
申请人： Takashi Yamaguchi , Toshimasa Kobayashi , Satoru Kijima , Takashi Kobayashi , Tsunenori Asatsuma , Takeharu Asano , Tomonori Hino
发明人： Takashi Yamaguchi , Toshimasa Kobayashi , Satoru Kijima , Takashi Kobayashi , Tsunenori Asatsuma , Takeharu Asano , Tomonori Hino
IPC分类号： H01L2100
CPC分类号： H01S5/32341 , H01S5/2081 , H01S5/209 , H01S5/2206 , H01S5/2231
摘要： A GaN compound semiconductor laser includes an AlGaN buried layer which buries opposite sides of a ridge stripe portion formed on a p-type AlGaN cladding layer. The AlGaN buried layer is made by first patterning an upper part of the p-type AlGaN cladding layer and a p-type GaN contact layer into a ridge stripe configuration by using a SiO2 film as an etching mask, then growing the AlGaN buried layer non-selectively on the entire substrate surface to bury both sides of the ridge stripe portion under the existence of the SiO2 film on the ridge stripe portion, and thereafter selectively removing the AlGaN buried layer from above the ridge stripe portion by etching using the SiO2 film as an etching stop layer. Thus, the GaN compound semiconductor laser is stabilized in the transverse mode, intensified in output power, and improved in lifetime.

3. 发明申请

US20050000407A1 Semiconductor laser, semiconductor device and nitride series III-V group compound substrate, as well as manufacturing method thereof 审中-公开
公开(公告)号：US20050000407A1
公开(公告)日：2005-01-06
申请号：US10909911
申请日：2004-08-02
申请人： Motonobu Takeya , Katsunori Yanashima , Takeharu Asano , Osamu Goto , Shinro Ikeda , Katsuyoshi Shibuya , Tomonori Hino , Satoru Kijima , Masao Ikeda
发明人： Motonobu Takeya , Katsunori Yanashima , Takeharu Asano , Osamu Goto , Shinro Ikeda , Katsuyoshi Shibuya , Tomonori Hino , Satoru Kijima , Masao Ikeda
IPC分类号： H01L21/20 , H01L33/00 , H01S5/02 , H01S5/343 , C30B15/00 , C30B21/06 , C30B23/00 , C30B25/00 , C30B27/02 , C30B28/10 , C30B28/12 , C30B28/14 , C30B30/04
CPC分类号： B82Y20/00 , H01L21/0237 , H01L21/02378 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L21/02639 , H01L21/0265 , H01L33/0075 , H01S5/0207 , H01S5/0422 , H01S5/22 , H01S5/34333 , H01S2304/12
摘要： A semiconductor laser, a semiconductor device and a nitride series III-V group compound substrate capable of obtaining a crystal growth layer with less fluctuation of the crystallographic axes and capable of improving the device characteristics, as well as a manufacturing method therefor are provided. The semiconductor laser comprises, on one surface of a substrate used for growing, a plurality of spaced apart seed crystal layers and an n-side contact layer having a lateral growing region which is grown on the basis of the plurality of seed crystal layers. The seed crystal layer is formed in that a product of width w1 (unit: μm) at the boundary thereof relative to the n-side contact layer along the arranging direction A and a thickness t1 (unit: μm) along the direction of laminating the n-side contact layer is 15 or less. This can decrease the fluctuation of the crystallographic axes in the n-side contact layer. Accordingly, crystallinity of the semiconductor layer including from n-type clad layer to a p-side contact layer laminated on the n-side contact layer is improved. A semiconductor laser and a semiconductor device capable of decreasing dislocation density and improving device characteristics, as well as a manufacturing method therefor are provided. A semiconductor layer comprising a nitride series III-V group compound semiconductor is laminated on a substrate 11 comprising an n-type GaN. Protruded seed crystal portions are formed and a growth suppression layer having an opening corresponding to the seed crystal portion is disposed to the substrate. The semiconductor layer grows on the basis of the seed crystal portion and has a lateral growing region of low dislocation density. When a current injection region is disposed corresponding to the lateral growing region, the light emission efficiency can be improved. Further, when the growth suppression layer is provided with a function of reflecting or absorbing light generated in the semiconductor layer, it is possible to prevent leakage of light or intrusion of stray light from the substrate to suppress generation of noises.

4. 发明授权

US06836498B2 Semiconductor laser, semiconductor device and nitride series III-V group compound substrate, as well as manufacturing method thereof 失效
标题翻译：半导体激光器，半导体器件和氮化物系III-V族复合衬底及其制造方法
公开(公告)号：US06836498B2
公开(公告)日：2004-12-28
申请号：US09874828
申请日：2001-06-05
申请人： Motonobu Takeya , Katsunori Yanashima , Takeharu Asano , Osamu Goto , Shinro Ikeda , Katsuyoshi Shibuya , Tomonori Hino , Satoru Kijima , Masao Ikeda
发明人： Motonobu Takeya , Katsunori Yanashima , Takeharu Asano , Osamu Goto , Shinro Ikeda , Katsuyoshi Shibuya , Tomonori Hino , Satoru Kijima , Masao Ikeda
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01L21/0237 , H01L21/02378 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L21/02639 , H01L21/0265 , H01L33/0075 , H01S5/0207 , H01S5/0422 , H01S5/22 , H01S5/34333 , H01S2304/12
摘要： A semiconductor laser, a semiconductor device and a nitride series III-V group compound substrate capable of obtaining a crystal growth layer with less fluctuation of the crystallographic axes and capable of improving the device characteristics, as well as a manufacturing method therefor are provided. The semiconductor laser comprises, on one surface of a substrate used for growing, a plurality of spaced apart seed crystal layers and an n-side contact layer having a lateral growing region which is grown on the basis of the plurality of seed crystal layers. The seed crystal layer is formed in that a product of width w1 (unit: &mgr;m) at the boundary thereof relative to the n-side contact layer along the arranging direction A and a thickness t1 (unit: &mgr;m) along the direction of laminating the n-side contact layer is 15 or less. A semiconductor layer comprising a nitride series III-V group compound semiconductor is laminated on a substrate 11 comprising an n-type GaN. Protruded seed crystal portions are formed and a growth suppression layer having an opening corresponding to the seed crystal portion is disposed to the substrate. The semiconductor layer grows on the basis of the seed crystal portion and has a lateral growing region of low dislocation density.
摘要翻译：提供能够获得晶体轴的波动较小并且能够提高器件特性的晶体生长层的半导体激光器，半导体器件和氮化物系III-V族化合物基片及其制造方法。半导体激光器在用于生长的基板的一个表面上包括多个间隔开的晶种层和具有基于多个晶种层生长的侧向生长区域的n侧接触层。晶种层形成为沿着排列方向A相对于n侧接触层的边界处的宽度w1（单位：毫姆）的乘积和层叠方向的厚度t1（单位：毫姆） n侧接触层为15以下。在包含n型GaN的基板11上层叠包含氮化物系III-V族化合物半导体的半导体层。形成突出的晶种部分，并且将具有与晶种部分对应的开口的生长抑制层设置在基板上。半导体层基于晶种部分生长，具有低位错密度的侧向生长区域。

5. 发明授权

US6069367A Semiconductor element and semiconductor light-emitting and semiconductor photoreceptor devices 有权
标题翻译：半导体元件和半导体发光和半导体感光器件
公开(公告)号：US6069367A
公开(公告)日：2000-05-30
申请号：US339848
申请日：1999-06-25
申请人： Shigetaka Tomiya , Satoru Kijima , Hiroyuki Okuyama , Satoshi Taniguchi , Hironori Tsukamoto
发明人： Shigetaka Tomiya , Satoru Kijima , Hiroyuki Okuyama , Satoshi Taniguchi , Hironori Tsukamoto
IPC分类号： H01L29/15 , H01L33/04 , H01L33/28 , H01L33/30 , H01L33/40 , H01S5/00 , H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01L33/40 , B82Y20/00 , H01L29/155 , H01L33/04 , H01L33/28
摘要： The purpose of the present invention is to provide a semiconductor light-emitting element that can reduce an operational voltage by improving a contact construction with a p-side electrode. An n-type clad layer, a first guide layer, an active layer, a second guide layer, a p-type clad layer, a ZnSSe cap layer, a ZnSe cap layer, a compositional gradient super-lattice layer, and a low defect contact layer are sequentially laminated on an n-type substrate. The compositional gradient super-lattice layer is formed by alternately laminating p-type ZnTe layers and p-type ZnSe layers. The p-type ZnTe layers are formed to be thickened toward the side of the low defect contact layer. The thickness of the low defect contact layer must be 5 nm or less. Relaxing lattice distortion reduces defect density of the low defect contact layer. Accordingly, the increase in the operational voltage immediately after energization is suppressed, and the operational voltage becomes lower.
摘要翻译：本发明的目的是提供通过改善与p侧电极的接触结构来降低工作电压的半导体发光元件。 n型覆盖层，第一引导层，有源层，第二引导层，p型覆盖层，ZnSSe覆盖层，ZnSe覆盖层，组成梯度超晶格层和低缺陷接触层依次层叠在n型基板上。通过交替层叠p型ZnTe层和p型ZnSe层来形成组成梯度超晶格层。形成p型ZnTe层朝向低缺陷接触层侧增厚。低缺陷接触层的厚度必须为5nm以下。松弛晶格畸变降低了低缺陷接触层的缺陷密度。因此，通电后立即动作电压的上升被抑制，工作电压变低。

6. 发明申请

US20120123170A1 METHOD FOR PRODUCING NONIONIC SURFACTANT 审中-公开
标题翻译：生产非离子表面活性剂的方法
公开(公告)号：US20120123170A1
公开(公告)日：2012-05-17
申请号：US13383418
申请日：2010-08-03
申请人： Keisuke Chiba , Yoshifumi Nishimoto , Tetsuaki Fukushima , Satoru Kijima
发明人： Keisuke Chiba , Yoshifumi Nishimoto , Tetsuaki Fukushima , Satoru Kijima
IPC分类号： C07C41/03
CPC分类号： C08G65/2609 , C08G65/2696
摘要： The present invention relates to the method for producing a nonionic surfactant, including the step (I) of reacting alcohol having a water content of not more than 0.1% by mass with ethylene oxide to obtain ethylene oxide-adduct, the step (II) of reacting the ethylene oxide-adduct with propylene oxide to obtain the alkylene oxide-adduct having a content of remaining propylene oxide of not more than 1000 mg/kg, and the step (III) of reacting the alkylene oxide-adduct with ethylene oxide to obtain the nonionic surfactant having each content of remaining ethylene oxide and remaining propylene oxide of not more than 5 mg/kg.
摘要翻译：本发明涉及非水性表面活性剂的制造方法，其包括将水含量为0.1质量％以下的醇与环氧乙烷反应的工序（I），得到环氧乙烷加合物，步骤（II）使环氧乙烷加成物与环氧丙烷反应，得到残留环氧丙烷含量为1000mg / kg以下的环氧烷 - 加成物，和使烯化氧加成物与环氧乙烷反应的工序（III），得到每个残留环氧乙烷和剩余环氧丙烷含量不大于5mg / kg的非离子表面活性剂。

7. 发明授权

US06960482B2 Method of fabricating nitride semiconductor and method of fabricating semiconductor device 有权
标题翻译：制造氮化物半导体的方法和制造半导体器件的方法
公开(公告)号：US06960482B2
公开(公告)日：2005-11-01
申请号：US10184902
申请日：2002-07-01
申请人： Osamu Matsumoto , Shinichi Ansai , Satoru Kijima
发明人： Osamu Matsumoto , Shinichi Ansai , Satoru Kijima
IPC分类号： H01L29/43 , C30B33/00 , H01L21/28 , H01L21/285 , H01L21/316 , H01L21/324 , H01S5/042 , H01S5/323 , H01L21/00
CPC分类号： C30B33/00 , C30B29/403 , C30B29/406 , H01L21/28575 , H01L21/3245
摘要： A method of fabricating a nitride semiconductor includes the steps of forming a nitride semiconductor doped with a p-type impurity, treating the surface of the nitride semiconductor in an atmosphere containing active oxygen to remove carbon remaining on the surface and form an oxide film thereon, and activating the p-type impurity to turn the conductive type of the nitride semiconductor into a p-type. Since carbon remaining on the surface of the nitride semiconductor is removed and the oxide film is formed thereon, the surface of the nitride semiconductor is prevented from being deteriorated by the activating treatment and the rate of activating the p-type impurity is enhanced. As a result, it is possible to reduce the contact resistance of the nitride semiconductor with an electrode and, hence, the variation in characteristics of the nitride semiconductor.
摘要翻译：一种制造氮化物半导体的方法包括以下步骤：形成掺杂有p型杂质的氮化物半导体，在含有活性氧的气氛中处理氮化物半导体的表面以除去残留在表面上的碳并在其上形成氧化膜，并激活p型杂质以使氮化物半导体的导电类型变为p型。由于去除残留在氮化物半导体的表面上的碳，并且在其上形成氧化物膜，所以通过激活处理来防止氮化物半导体的表面劣化，并且提高了p型杂质的激活速率。结果，可以降低氮化物半导体与电极的接触电阻，并因此降低氮化物半导体的特性的变化。

8. 发明授权

US5909459A Surface-emitting semiconductor light emitting device 失效
标题翻译：表面发射半导体发光器件
公开(公告)号：US5909459A
公开(公告)日：1999-06-01
申请号：US30862
申请日：1998-02-26
申请人： Akira Ishibashi , Norikazu Nakayama , Satoru Kijima
发明人： Akira Ishibashi , Norikazu Nakayama , Satoru Kijima
IPC分类号： H01L33/06 , H01L33/12 , H01L33/28 , H01L33/38 , H01L33/42 , H01S5/00 , H01S5/042 , H01S5/183 , H01S5/327 , H01S5/347 , H01S3/19
CPC分类号： H01L33/42 , B82Y20/00 , H01L33/14 , H01L33/28 , H01L33/38 , H01S5/0421 , H01S5/0425 , H01S5/183 , H01S5/327 , H01S5/347
摘要： A surface-emitting semiconductor light emitting device comprises an n-type ZnSe buffer layer, n-type ZnSSe layer, n-type ZnMgSSe cladding layer, n-type ZnSSe waveguide layer, active layer, p-type ZnSSe waveguide layer, p-type ZnMgSSe cladding layer, p-type ZnSSe layer,p-type ZnSe contact layer, p-type ZnSe/ZnTe MQW layer and p-type ZnTe contact layer, sequentially stacked on an n-type GaAs substrate. A grid-shaped p-side electrode and a Au film convering the p-side electrode are provided on the p-type ZnTe contact layer. An n-side electrode is provided on the back surface of the n-type GaAs substrate. The active layer has a single quantum well structure or a multiple quantum structure including ZnCdSe quantum well layers.
摘要翻译：表面发射半导体发光器件包括n型ZnSe缓冲层，n型ZnSSe层，n型ZnMgSSe覆层，n型ZnSSe波导层，有源层，p型ZnSSe波导层，p型 ZnMgSSe覆层，p型ZnSSe层，p型ZnSe接触层，p型ZnSe / ZnTe MQW层和p型ZnTe接触层，依次层叠在n型GaAs衬底上。在p型ZnTe接触层上设置有形成p侧电极的栅状p侧电极和Au膜。在n型GaAs衬底的背面设有n侧电极。活性层具有单量子阱结构或包含ZnCdSe量子阱层的多量子结构。

9. 发明授权

US07196213B2 Process for producing phosphate 失效
标题翻译：磷酸盐生产工艺
公开(公告)号：US07196213B2
公开(公告)日：2007-03-27
申请号：US10742817
申请日：2003-12-23
申请人： Akira Matsunaga , Satoru Kijima
发明人： Akira Matsunaga , Satoru Kijima
IPC分类号： C07C9/02
CPC分类号： C07F9/025 , C07F9/091
摘要： Provided are a process for producing a phosphate and a process for stabilizing a phosphate, the phosphate being an acid-form phosphate wherein an organic hydroxy compound is an alkylene oxide adduct. A production process of a phosphate and a stabilization process of a phosphate, including the step 1 of reacting an organic hydroxy compound represented by the following general formula (I) with a phosphorylating agent: R1—O—(AO)n—H (I) wherein R1 represents a straight or branched alkyl group or alkenyl group having 6 to 36 carbon atoms, AO represents an oxyalkylene group having 2 to 4 carbon atoms, and n is a number of 0.1 to 100 on the average; the step 2 of purifying the reaction product obtained in the step 1 until the content of the organic hydroxy compound that has not yet reacted becomes 2% or less by weight; and the step 3 of adding water to the purified product obtained in the step 2 at such a ratio that the content of water in the final product is from 0.5 to 10% by weight.
摘要翻译：提供磷酸盐的制造方法和磷酸盐稳定化方法，磷酸盐为酸式磷酸盐，其中有机羟基化合物为烯化氧加合物。磷酸盐的制造方法和磷酸盐稳定化方法，包括使由以下通式（I）表示的有机羟基化合物与磷酸化Ag反应的步骤1

10. 发明授权

US06961359B2 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US06961359B2
公开(公告)日：2005-11-01
申请号：US10655678
申请日：2003-09-05
申请人： Tsuyoshi Tojo , Shiro Uchida , Satoru Kijima
发明人： Tsuyoshi Tojo , Shiro Uchida , Satoru Kijima
IPC分类号： H01S5/22 , H01S5/323 , H01S5/00
CPC分类号： H01S5/22 , H01S5/0655 , H01S5/2218 , H01S5/2219 , H01S5/32341
摘要： Disclosed is a nitride based III-V group compound semiconductor laser device of ridge waveguide type with an oscillation wavelength of about 410 nm which has a low driving voltage, a high half-width value θ// of a FFP in a direction horizontal to a hetero interface, and a high kink level (i.e., good light output-injected current characteristics over the high-output range). This laser device is similar in structure to the related-art semiconductor laser device except for the current constricting layer formed in a ridge. It has a stacked film composed of an SiO2 film (600 Å thick) and an amorphous Si film (300 Å thick) which are formed on the SiO2 film by vapor deposition. The stacked film covers both sides of the ridge and a p-AlGaN cladding layer extending sideward from the base of the ridge. The SiO2 film and Si film have respective thicknesses which are established such that the absorption coefficient of fundamental horizontal lateral mode is larger than the absorption coefficient of primary horizontal lateral mode. This structure results in a higher kink level, while suppressing the high-order horizontal lateral mode, a larger effective refractive index difference Δn, and a larger value of θ// without the necessity for reducing the ridge width.
摘要翻译：公开了一种振荡波长约410nm的脊波导型氮化物III-V族化合物半导体激光装置，其具有低驱动电压，高半值宽度值θ/ FFP在与异质界面水平的方向上，并具有高扭结水平（即，在高输出范围内的良好的光输出注入电流特性）。除了形成在脊中的电流收缩层之外，该激光装置的结构类似于现有技术的半导体激光装置。它具有由SiO 2膜（600埃）和非晶硅膜（300埃）组成的叠层膜，它们通过蒸气形成在SiO 2膜上沉积堆叠的膜覆盖脊的两侧，并且从脊的底部向侧延伸的p-AlGaN包覆层。 SiO 2膜和Si膜具有各自的厚度，其被建立为使得基本水平横向模式的吸收系数大于主水平横向模式的吸收系数。这种结构导致较高的扭结水平，同时抑制高阶水平横向模式，更大的有效折射率差Deltan和较大的θθ值，而不需要减小脊宽度。

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