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1. 发明申请

US20100315864A1 MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：US20100315864A1
公开(公告)日：2010-12-16
申请号：US12851275
申请日：2010-08-05
申请人： Tomomasa UEDA , Hisanori Aikawa , Masatoshi Yoshikawa , Naoharu Shimomura , Masahiko Nakayama , Sumio Ikegawa , Keiji Hosotani , Makoto Nagamine
发明人： Tomomasa UEDA , Hisanori Aikawa , Masatoshi Yoshikawa , Naoharu Shimomura , Masahiko Nakayama , Sumio Ikegawa , Keiji Hosotani , Makoto Nagamine
IPC分类号： G11C11/00 , H01L21/02 , H01L29/82
CPC分类号： G11C11/15 , H01L27/228 , H01L43/08
摘要： A magnetoresistive element includes: a magnetization free layer having a first plane and a second plane located on the opposite side from the first plane, and having a variable magnetization direction; a magnetization pinned layer provided on the first plane side of the magnetization free layer, and having a pinned magnetization direction; a first tunnel barrier layer provided between the magnetization free layer and the magnetization pinned layer; a second tunnel barrier layer provided on the second plane of the magnetization free layer; and a non-magnetic layer provided on a plane on the opposite side of the second tunnel barrier layer from the magnetization free layer. The magnetization direction of the magnetization free layer is variable by applying current between the magnetization pinned layer and the non-magnetic layer, and a resistance ratio between the first tunnel barrier layer and the second tunnel barrier layer is in a range of 1:0.25 to 1:4.
摘要翻译：磁阻元件包括：无磁化层，其具有第一平面和位于与第一平面相反的一侧的第二平面，并且具有可变的磁化方向; 磁化固定层，设置在所述磁化自由层的所述第一平面侧上，并且具有钉扎磁化方向; 设置在所述磁化自由层和所述磁化固定层之间的第一隧道势垒层; 设置在无磁化层的第二平面上的第二隧道势垒层; 以及设置在与磁化自由层相反的第二隧道势垒层的相对侧上的平面上的非磁性层。磁化自由层的磁化方向通过在磁化被钉扎层和非磁性层之间施加电流而变化，并且第一隧道势垒层和第二隧道势垒层之间的电阻比在1:0.25至 1：4。

2. 发明申请

US20080180859A1 MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：US20080180859A1
公开(公告)日：2008-07-31
申请号：US12014522
申请日：2008-01-15
申请人： Tomomasa UEDA , Hisanori AIKAWA , Masatoshi YOSHIKAWA , Naoharu SHIMOMURA , Masahiko NAKAYAMA , Sumio IKEGAWA , Keiji HOSOTANI , Makoto NAGAMINE
发明人： Tomomasa UEDA , Hisanori AIKAWA , Masatoshi YOSHIKAWA , Naoharu SHIMOMURA , Masahiko NAKAYAMA , Sumio IKEGAWA , Keiji HOSOTANI , Makoto NAGAMINE
IPC分类号： G11B5/33
CPC分类号： G11C11/15 , H01L27/228 , H01L43/08
摘要： A magnetoresistive element includes: a magnetization free layer having a first plane and a second plane located on the opposite side from the first plane, and having a variable magnetization direction; a magnetization pinned layer provided on the first plane side of the magnetization free layer, and having a pinned magnetization direction; a first tunnel barrier layer provided between the magnetization free layer and the magnetization pinned layer; a second tunnel barrier layer provided on the second plane of the magnetization free layer; and a non-magnetic layer provided on a plane on the opposite side of the second tunnel barrier layer from the magnetization free layer. The magnetization direction of the magnetization free layer is variable by applying current between the magnetization pinned layer and the non-magnetic layer, and a resistance ratio between the first tunnel barrier layer and the second tunnel barrier layer is in a range of 1:0.25 to 1:4.
摘要翻译：磁阻元件包括：无磁化层，其具有第一平面和位于与第一平面相反的一侧的第二平面，并且具有可变的磁化方向; 磁化固定层，设置在所述磁化自由层的所述第一平面侧上，并且具有钉扎磁化方向; 设置在所述磁化自由层和所述磁化固定层之间的第一隧道势垒层; 设置在无磁化层的第二平面上的第二隧道势垒层; 以及设置在与磁化自由层相反的第二隧道势垒层的相对侧上的平面上的非磁性层。磁化自由层的磁化方向通过在磁化被钉扎层和非磁性层之间施加电流而变化，并且第一隧道势垒层和第二隧道势垒层之间的电阻比在1:0.25至 1：4。

3. 发明申请

US20080253039A1 MAGNETORESISTIVE EFFECT ELEMENT 审中-公开
标题翻译：磁感应效应元件
公开(公告)号：US20080253039A1
公开(公告)日：2008-10-16
申请号：US12100097
申请日：2008-04-09
申请人： Makoto NAGAMINE , Keiji HOSOTANI , Hisanori AIKAWA , Tomomasa UEDA , Sumio IKEGAWA
发明人： Makoto NAGAMINE , Keiji HOSOTANI , Hisanori AIKAWA , Tomomasa UEDA , Sumio IKEGAWA
IPC分类号： G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3906 , G11C11/161 , G11C29/50 , H01F10/3254 , H01F10/3277 , H01F41/307 , H01L43/08 , H01L43/12
摘要： A magnetoresistive effect element includes a first ferromagnetic layer formed above a substrate, a second ferromagnetic layer formed above the first ferromagnetic layer, an insulating layer interposed between the first ferromagnetic layer and the second ferromagnetic layer and formed of a metal oxide, and a first nonmagnetic metal layer interposed between the insulating layer and the second ferromagnetic layer and in contact with a surface of the insulating layer on the side of the second ferromagnetic layer, the first nonmagnetic metal layer containing the same metal element as the metal oxide.
摘要翻译：磁阻效应元件包括形成在衬底上的第一铁磁层，形成在第一铁磁层之上的第二铁磁层，介于第一铁磁层和第二铁磁层之间并由金属氧化物形成的绝缘层，以及第一非磁性层金属层介于绝缘层和第二铁磁层之间并与第二铁磁层一侧的绝缘层的表面接触，第一非磁性金属层含有与金属氧化物相同的金属元素。

4. 发明申请

US20130078752A1 METHOD FOR MANUFACTURING DISPLAY DEVICE 失效
公开(公告)号：US20130078752A1
公开(公告)日：2013-03-28
申请号：US13483672
申请日：2012-05-30
申请人： Tatsunori SAKANO , Kentaro MIURA , Nobuyoshi SAITO , Shintaro NAKANO , Tomomasa UEDA , Hajime YAMAGUCHI
发明人： Tatsunori SAKANO , Kentaro MIURA , Nobuyoshi SAITO , Shintaro NAKANO , Tomomasa UEDA , Hajime YAMAGUCHI
IPC分类号： H01L33/08
CPC分类号： H05K3/10 , G02F1/133305 , G02F1/1362 , H01L27/1266 , H01L2227/326
摘要： According to one embodiment, a method is disclosed for manufacturing a display device. A film material layer is formed on a support substrate. A first heating process for the film material layer at a first temperature to form a film layer and a second heating process for a second region surrounding a first region at a second temperature higher than the first temperature are performed. The first region is provided in a central part of the film layer. A display layer is formed in the first region and a peripheral circuit section is formed at least in a part of the second region. A third heating process is performed for at least a part of the film layer at a third temperature higher than the second temperature. In addition, the film layer is peeled off from the support substrate.

5. 发明申请

US20130075719A1 THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING SAME, AND DISPLAY DEVICE 有权
公开(公告)号：US20130075719A1
公开(公告)日：2013-03-28
申请号：US13483593
申请日：2012-05-30
申请人： Shintaro NAKANO , Tomomasa UEDA , Kentaro MIURA , Nobuyoshi SAITO , Tatsunori SAKANO , Hajime YAMAGUCHI
发明人： Shintaro NAKANO , Tomomasa UEDA , Kentaro MIURA , Nobuyoshi SAITO , Tatsunori SAKANO , Hajime YAMAGUCHI
IPC分类号： H01L29/786 , H01L21/336 , H01L29/12 , H01L29/22 , B82Y99/00
CPC分类号： H01L29/7869 , H01L21/02266 , H01L21/02565 , H01L27/3244 , H01L29/24 , H01L29/42364 , H01L29/42384 , H01L29/66969 , H01L29/78603 , H01L51/0096 , H01L2251/5338
摘要： According to one embodiment, a thin film transistor includes a substrate, a gate electrode, a first insulating film, an oxide semiconductor film, a second insulating film, a source electrode, and a drain electrode. The gate electrode is provided on a part of the substrate. The first insulating film covers the gate electrode. The oxide semiconductor film is provided on the gate electrode via the first insulating film. The second insulating film is provided on a part of the oxide semiconductor film. The source and drain electrodes are respectively connected to first and second portions of the oxide semiconductor film not covered with the second insulating film. The oxide semiconductor film includes an oxide semiconductor. Concentrations of hydrogen contained in the first and second insulating films are not less than 5×1020 atm/cm3, and not more than 1019 atm/cm3, respectively.

6. 发明申请

US20130313545A1 DISPLAY DEVICE 有权
标题翻译：显示设备
公开(公告)号：US20130313545A1
公开(公告)日：2013-11-28
申请号：US13724294
申请日：2012-12-21
申请人： Nobuyoshi SAITO , Kentaro MIURA , Shintaro NAKANO , Tatsunori SAKANO , Tomomasa UEDA , Hajime YAMAGUCHI
发明人： Nobuyoshi SAITO , Kentaro MIURA , Shintaro NAKANO , Tatsunori SAKANO , Tomomasa UEDA , Hajime YAMAGUCHI
IPC分类号： H01L51/52 , H01L29/786
CPC分类号： H01L51/5203 , H01L27/3262 , H01L29/7869
摘要： According to one embodiment, a display device includes a substrate, a thin film transistor, a passivation film, a hydrogen barrier film, a pixel electrode, an organic light emitting layer, an opposite electrode, and a sealing film. The thin film transistor is provided on a major surface of the substrate. The thin film transistor includes a gate electrode, a gate insulating film, a semiconductor film, a first conducting portion, and a second conducting portion. The passivation film is provided on the thin film transistor. The hydrogen barrier film is provided on the passivation film. The pixel electrode is electrically connected to one of the first conducting portion and the second conducting portion. The organic light emitting layer is provided on the pixel electrode. The opposite electrode is provided on the organic light emitting layer. The sealing film is provided on the hydrogen barrier film and the opposite electrode.
摘要翻译：根据一个实施例，显示装置包括基板，薄膜晶体管，钝化膜，氢阻挡膜，像素电极，有机发光层，相对电极和密封膜。薄膜晶体管设置在基板的主表面上。薄膜晶体管包括栅电极，栅极绝缘膜，半导体膜，第一导电部分和第二导电部分。钝化膜设置在薄膜晶体管上。氢屏障膜设置在钝化膜上。像素电极电连接到第一导电部分和第二导电部分中的一个。有机发光层设置在像素电极上。相对电极设置在有机发光层上。密封膜设置在氢阻挡膜和相对电极上。

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