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    • 1. 发明申请
    • PRODUCT SEARCH SYSTEM
    • 产品搜索系统
    • US20140344115A1
    • 2014-11-20
    • US14368305
    • 2012-02-06
    • Tomoko YatsudaTakeshi NagaiTakeshi KasamakiKatsuhiro Suzuki
    • Tomoko YatsudaTakeshi NagaiTakeshi KasamakiKatsuhiro Suzuki
    • G06F17/30G06Q30/06
    • G06F16/248G06F16/26G06F16/951G06Q30/0627G06Q30/0629
    • A product search system includes a product data storage portion for storing product data, an axis item data storage portion for storing settability information for axis items and axis division numbers, a product ID storage portion for storing unique identification information of products, a two-dimensional coordinate space defining portion for defining a two-dimensional coordinate space, a distribution diagram generating portion for generating data for a distribution diagram in which product images are arranged in the coordinate space, and a product extracting portion for extracting unique identification information of products within an area of a section selected by a user, and storing the information in the product ID storage portion. Once the unique identification information is stored in the product ID storage portion, the distribution diagram generating portion generates data for a post-refinement distribution diagram in which product images for products corresponding to the stored unique identification information are relatively highlighted.
    • 产品搜索系统包括用于存储产品数据的产品数据存储部分,用于存储用于轴项目和轴分配数字的可设置性信息的轴项目数据存储部分,用于存储产品的唯一标识信息的产品ID存储部分,二维 用于定义二维坐标空间的坐标空间限定部分,用于生成其中在坐标空间中排列产品图像的分布图的数据的分布图生成部分,以及用于提取在坐标空间内的产品的唯一识别信息的产品提取部分 区域,并将该信息存储在产品ID存储部分中。 一旦将唯一的识别信息存储在产品ID存储部分中,分发图生成部分生成后期细化分布图的数据,其中与所存储的唯一标识信息相对应的产品的商品图像被相对突出显示。
    • 4. 发明授权
    • Semiconductor device and method of forming the same
    • 半导体器件及其形成方法
    • US08395197B2
    • 2013-03-12
    • US12961252
    • 2010-12-06
    • Takeshi Nagai
    • Takeshi Nagai
    • H01L27/108H01L29/76H01L29/94H01L31/119H01L31/062H01L31/113
    • H01L27/10894H01L21/823412H01L21/823418H01L27/10873H01L27/10876H01L29/4236H01L29/6659H01L29/66621H01L29/66628H01L29/7834
    • A semiconductor device includes a gate electrode on a gate insulating film over a semiconductor substrate, a first sidewall insulating film on a side surface of the gate electrode, and source and drain regions, each including a pocket diffusion layer of a first conductivity type, and first and second diffusion layers of a second conductivity type. The pocket diffusion layer is disposed in the semiconductor substrate. The first diffusion layer of a second conductivity type extends over the pocket diffusion layer. The first diffusion layer faces toward the gate electrode through the first sidewall insulating film. The second diffusion layer over the first diffusion layer is higher in impurity concentration than the first diffusion layer. The second diffusion layer is separated by the first diffusion layer from the pocket diffusion layer, and has a side surface which faces toward the first sidewall insulating film through the first diffusion layer.
    • 半导体器件包括在半导体衬底上的栅极绝缘膜上的栅电极,栅电极的侧表面上的第一侧壁绝缘膜,以及源极和漏极区,每个包括第一导电类型的穴扩散层,以及 第二导电类型的第一和第二扩散层。 该袋扩散层设置在半导体衬底中。 第二导电类型的第一扩散层在袋扩散层上延伸。 第一扩散层通过第一侧壁绝缘膜朝向栅电极。 第一扩散层上的第二扩散层的杂质浓度高于第一扩散层。 第二扩散层通过第一扩散层从袋扩散层分离,并且具有通过第一扩散层面向第一侧壁绝缘膜的侧表面。
    • 8. 发明授权
    • Semiconductor memory in which error correction is performed by on-chip error correction circuit
    • 半导体存储器,其中通过片上纠错电路进行纠错
    • US07610542B2
    • 2009-10-27
    • US11454007
    • 2006-06-16
    • Takeshi Nagai
    • Takeshi Nagai
    • G11C29/00
    • G11C7/1039G06F11/1008G11C7/1006G11C11/4096G11C2029/0411G11C2207/104
    • A synchronous semiconductor memory which performs a pipeline operation includes an error correction circuit, an output circuit, and first and second write circuits. The first write circuit is configured to overwrite at least a portion of externally input write data on data read out from a memory cell and corrected by the error correction circuit, and write the overwritten data in the memory cell. The output circuit is configured to output the overwritten data outside a chip. The second write circuit is configured to reoverwrite at least a portion of write data which is externally input at a different time on the overwritten data, encode the reoverwritten data, and write the encoded data in the memory cell.
    • 执行流水线操作的同步半导体存储器包括纠错电路,输出电路以及第一和第二写入电路。 第一写入电路被配置为覆盖从存储器单元读出并由纠错电路校正的数据的外部输入写入数据的至少一部分,并将重写的数据写入存储单元。 输出电路被配置为输出芯片外部的重写数据。 第二写入电路被配置为重新写入写入数据的至少一部分,该写入数据在重写的数据上以不同的时间被外部输入,对重写的数据进行编码,并将编码的数据写入存储单元。