专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20080132401A1 OPTICAL GLASS 审中-公开
公开(公告)号：US20080132401A1
公开(公告)日：2008-06-05
申请号：US11616704
申请日：2006-12-27
申请人： Tomohiro WATANABE , Taihei Mukaide , Hidenosuke Itoh
发明人： Tomohiro WATANABE , Taihei Mukaide , Hidenosuke Itoh
IPC分类号： C03C3/06 , C03C3/062 , C03C3/087
CPC分类号： C03C4/0085 , C03C3/087 , Y10T428/261
摘要： An optical glass containing Si, Al, Ca, and O is provided. The optical glass contains Si in an amount of 7% or more and 93% or less, in cation percent, Al in an amount of 2% or more and 57% or less, in cation percent, and Ca in an amount of 2% or more and 52% or less, in cation percent. In the optical glass, a total amount of Si, Al, and Ca is 99.5% or more, in cation percent. Further, the optical glass contains Fe and Na each in an amount of 0.01 wtppm or less and has a transmittance to a light having a wavelength of 248 nm of 15% or more at a thickness of 5 mm.

2. 发明申请

US20110216203A1 SIP CONVERTER 审中-公开
标题翻译： SIP转换器
公开(公告)号：US20110216203A1
公开(公告)日：2011-09-08
申请号：US13109752
申请日：2011-05-17
申请人： Yutaka TSUMORI , Motoki TAKAHASHI , Tomohiro WATANABE
发明人： Yutaka TSUMORI , Motoki TAKAHASHI , Tomohiro WATANABE
IPC分类号： H04N7/18 , G06F15/16
CPC分类号： H04L65/105
摘要： When communications are performed by connecting a non-SIP information terminal device in which SIP is not supported to a SIP converter connected to a communication line via a line terminating device, the SIP converter performs establishment and disconnection of a SIP session, and transmission of a SIP message on behalf of the non-SIP information terminal device.
摘要翻译：当通过连接通过线路终端设备连接到通信线路的SIP转换器不支持SIP的非SIP信息终端设备进行通信时，SIP转换器执行SIP会话的建立和断开，以及 SIP消息代表非SIP信息终端设备。

3. 发明申请

US20080305614A1 PRECISION TRENCH FORMATION FOR SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的精密成型
公开(公告)号：US20080305614A1
公开(公告)日：2008-12-11
申请号：US12134087
申请日：2008-06-05
申请人： Fumihiko INOUE , Takayuki MARUYAMA , Tomohiro WATANABE
发明人： Fumihiko INOUE , Takayuki MARUYAMA , Tomohiro WATANABE
IPC分类号： H01L21/762
CPC分类号： H01L21/3065 , H01L21/30604 , H01L29/785
摘要： Structures and methods for precision trench formation are disclosed. In one embodiment, a method for manufacturing a semiconductor device comprises forming a first oxygen-containing region in a semiconductor substrate by performing an oxygen ion implantation to a portion of the semiconductor substrate, and oxidizing the first oxygen-containing region using oxygen contained therein by performing a thermal processing to the semiconductor substrate, where the first oxygen-containing region is converted to a first oxide region. The method further comprises forming a groove in the semiconductor substrate by eliminating the first oxide region, where the performing thermal processing comprises subjecting the first oxygen-containing region to a gas low on oxygen.
摘要翻译：公开了用于精密沟槽形成的结构和方法。在一个实施例中，一种制造半导体器件的方法包括通过对半导体衬底的一部分进行氧离子注入，在半导体衬底中形成第一含氧区域，并且通过使用其中包含的氧的第一含氧区域氧化对所述半导体衬底进行热处理，其中所述第一含氧区域被转换为第一氧化物区域。该方法还包括通过消除第一氧化物区域在半导体衬底中形成沟槽，其中执行热处理包括使第一含氧区域处于低于氧的气体。

4. 发明申请

US20110081767A1 PRECISION TRENCH FORMATION THROUGH OXIDE REGION FORMATION FOR A SEMICONDUCTOR DEVICE 有权
标题翻译：通过半导体器件的氧化物形成形成的精密铁素体形成
公开(公告)号：US20110081767A1
公开(公告)日：2011-04-07
申请号：US12961352
申请日：2010-12-06
申请人： Fumihiko INOUE , Takayuki MARUYAMA , Tomohiro WATANABE
发明人： Fumihiko INOUE , Takayuki MARUYAMA , Tomohiro WATANABE
IPC分类号： H01L21/762
CPC分类号： H01L21/3065 , H01L21/30604 , H01L29/785
摘要： Structures and methods for precision trench formation are disclosed. In one embodiment, a method for manufacturing a semiconductor device comprises forming a first oxygen-containing region in a semiconductor substrate by performing an oxygen ion implantation to a portion of the semiconductor substrate, and oxidizing the first oxygen-containing region using oxygen contained therein by performing a thermal processing to the semiconductor substrate, where the first oxygen-containing region is converted to a first oxide region. The method further comprises forming a groove in the semiconductor substrate by eliminating the first oxide region, where the performing thermal processing comprises subjecting the first oxygen-containing region to a gas low on oxygen.
摘要翻译：公开了用于精密沟槽形成的结构和方法。在一个实施例中，一种制造半导体器件的方法包括通过对半导体衬底的一部分进行氧离子注入，在半导体衬底中形成第一含氧区域，并且通过使用其中包含的氧的第一含氧区域氧化对所述半导体衬底进行热处理，其中所述第一含氧区域被转换为第一氧化物区域。该方法还包括通过消除第一氧化物区域在半导体衬底中形成沟槽，其中执行热处理包括使第一含氧区域处于低于氧的气体。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式