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1. 发明授权

US06572700B2 Semiconductor crystal, and method and apparatus of production thereof 有权
标题翻译：半导体晶体及其制造方法和装置
公开(公告)号：US06572700B2
公开(公告)日：2003-06-03
申请号：US09779097
申请日：2001-02-07
申请人： Tomohiro Kawase , Katsushi Hashio , Shin-ichi Sawada , Masami Tatsumi
发明人： Tomohiro Kawase , Katsushi Hashio , Shin-ichi Sawada , Masami Tatsumi
IPC分类号： C30B2942
CPC分类号： C30B15/00 , C30B11/00 , C30B29/42 , Y10S117/90 , Y10T117/10 , Y10T117/1024 , Y10T117/1096
摘要： An apparatus and method of providing a large semiconductor crystal at a low cost are provided. The apparatus of producing a semiconductor crystal includes a reactor tube having an open end at least one end side, formed of any one material selected from the group consisting of silicon carbide, silicon nitride, aluminum nitride, and aluminum oxide, or of a composite material with any one material selected from the group consisting of silicon carbide, silicon nitride, aluminum nitride, boron nitride, aluminum oxide, magnesium oxide, mullite, and carbon as a base, and having an oxidation-proof or airtight film formed on the surface of the base, a kanthal heater arranged around the reactor tube in the atmosphere, a flange attached at the open end to seal the reactor tube, and a crucible mounted in the reactor tube to store material of a semiconductor crystal. The material stored in the crucible is heated and melted to form material melt. The material melt is solidified to grow a semiconductor crystal.
摘要翻译：提供了一种以低成本提供大型半导体晶体的装置和方法。制造半导体晶体的装置包括具有开口端至少一端侧的反应器管，由选自碳化硅，氮化硅，氮化铝和氧化铝的任何一种材料形成，或由复合材料使用选自碳化硅，氮化硅，氮化铝，氮化硼，氧化铝，氧化镁，莫来石和碳作为基底的任何一种材料，并且在其表面上形成有防氧化或气密的膜基座，在大气中布置在反应器管周围的kanthal加热器，连接在开口端以密封反应器管的凸缘以及安装在反应器管中以存储半导体晶体的材料的坩埚。储存在坩埚中的材料被加热熔化以形成材料熔体。材料熔体固化以生长半导体晶体。

2. 发明授权

US06780244B2 Method for producing a semiconductor crystal 有权
标题翻译：半导体晶体的制造方法
公开(公告)号：US06780244B2
公开(公告)日：2004-08-24
申请号：US10376097
申请日：2003-02-26
申请人： Tomohiro Kawase , Katsushi Hashio , Shin-ichi Sawada , Masami Tatsumi
发明人： Tomohiro Kawase , Katsushi Hashio , Shin-ichi Sawada , Masami Tatsumi
IPC分类号： C30B2942
CPC分类号： C30B15/00 , C30B11/00 , C30B29/42 , Y10S117/90 , Y10T117/10 , Y10T117/1024 , Y10T117/1096
摘要： A large semiconductor crystal is produced by charging a raw material into a crucible in a reactor tube, sealing the reactor tube with a flange on an open end of the tube, pressurizing the interior of the tube to an elevated pressure with an inert gas, heating the tube with an externally arranged heater to melt the raw material to form a raw material melt in the crucible, and solidifying the raw material melt to grow the semiconductor crystal. A second raw material such as a group V element can be introduced as a vapor from a reservoir into the melt in the crucible to form a compound semiconductor material. The flange is sealed to the tube by an elastic seal member, of which the temperature is maintained below 400° C. throughout the process, to protect its elastic sealing properties.
摘要翻译：通过将原料装入反应器管中的坩埚中来制造大的半导体晶体，将反应器管与管的开口端上的凸缘密封，用惰性气体加压管的内部至升高的压力，加热所述管具有外部布置的加热器，用于熔化原料以在坩埚中形成原料熔体，并固化原料熔体以使半导体晶体生长。可以将诸如V族元素的第二原料作为蒸气从储存器引入坩埚中的熔体中以形成化合物半导体材料。法兰通过弹性密封件密封到管上，在整个过程中温度保持在400℃以下，以保护其弹性密封性能。

3. 发明授权

US06866714B2 Large size semiconductor crystal with low dislocation density 有权
标题翻译：具有低位错密度的大尺寸半导体晶体
公开(公告)号：US06866714B2
公开(公告)日：2005-03-15
申请号：US10430027
申请日：2003-05-05
申请人： Tomohiro Kawase , Katsushi Hashio , Shin-ichi Sawada , Masami Tatsumi
发明人： Tomohiro Kawase , Katsushi Hashio , Shin-ichi Sawada , Masami Tatsumi
IPC分类号： C30B11/00 , C30B15/00 , C30B29/42 , C30B35/00
CPC分类号： C30B15/00 , C30B11/00 , C30B29/42 , Y10S117/90 , Y10T117/10 , Y10T117/1024 , Y10T117/1096
摘要： A large semiconductor crystal has a diameter of at least 6 inches and a low dislocation density of not more than 1×104 cm−2. The crystal is preferably a single crystal of GaAs, or one of CdTe, InAs, GaSb, Si or Ge, and may have a positive boron concentration of not more than 1×1016 cm−3 and a carbon concentration of 0.5×1015 cm−3 to 1.5×1015 cm−3 with a uniform concentration throughout the crystal. Such a crystal can form a very thin wafer with a low dislocation density. A special method and apparatus for producing such a crystal is also disclosed.
摘要翻译：大半导体晶体具有至少6英寸的直径和不大于1×10 -4 cm -2的低位错密度。该晶体优选为GaAs的单晶，或CdTe，InAs，GaSb，Si或Ge中的一种，并且可以具有不大于1×10 16 cm -3的正硼浓度和0.5×10 6的碳浓度 <15> cm -3至1.5×10 15 cm -3，在整个晶体中具有均匀的浓度。这种晶体可以形成具有低位错密度的非常薄的晶片。还公开了一种用于制造这种晶体的特殊方法和装置。

4. 发明授权

US06254677B1 Semiconductor crystal, and method and apparatus of production thereof 有权
标题翻译：半导体晶体及其制造方法和装置
公开(公告)号：US06254677B1
公开(公告)日：2001-07-03
申请号：US09217349
申请日：1998-12-21
申请人： Katsushi Hashio , Shin-ichi Sawada , Masami Tatsumi
发明人： Katsushi Hashio , Shin-ichi Sawada , Masami Tatsumi
IPC分类号： C30B2942
CPC分类号： C30B15/00 , C30B11/00 , C30B29/42 , Y10S117/90 , Y10T117/1024 , Y10T117/1096
摘要： An apparatus for and method of producing a large semiconductor crystal at a low cost are provided. The apparatus for producing a semiconductor crystal includes a reactor (1) having an open end at both ends thereof, that is formed of any material selected from the group consisting of silicon carbide, silicon nitride, aluminum nitride, and aluminum oxide, or of a composite material including a base material selected from the group consisting of silicon carbide, silicon nitride, aluminum nitride, boron nitride, aluminum oxide, magnesium oxide, mullite, and carbon as a base, and including an oxidation-proof or airtight film formed on the surface of the base. The apparatus further includes a resistance heater (3) arranged around the reactor (1) in the atmosphere, a flange (9) attached at the open end to seal the reactor (1), and a crucible (2) mounted in the reactor (1) to store material of a semiconductor crystal. The material stored in the crucible (2) is heated and melted to form a material melt (60). The material melt is solidified to grow a semiconductor crystal (50).
摘要翻译：提供了一种低成本生产大型半导体晶体的方法和方法。本发明的半导体晶体的制造装置包括：反应器（1），其在其两端具有开口端，由选自碳化硅，氮化硅，氮化铝和氧化铝的任何材料形成，或由复合材料，其包括选自由碳化硅，氮化硅，氮化铝，氮化硼，氧化铝，氧化镁，莫来石和碳作为基底的基材的基材，并且包括形成在所述基底上的氧化防止或气密膜底座表面。该装置还包括在大气中布置在反应器（1）周围的电阻加热器（3），连接在开口端以密封反应器（1）的凸缘（9）和安装在反应器中的坩埚（2） 1）存储半导体晶体的材料。储存在坩埚（2）中的材料被加热并熔化以形成材料熔体（60）。材料熔体固化以生长半导体晶体（50）。

5. 发明授权

US5951758A Method and apparatus for the growth of a single crystal 失效
标题翻译：用于单晶生长的方法和装置
公开(公告)号：US5951758A
公开(公告)日：1999-09-14
申请号：US937889
申请日：1997-09-25
申请人： Katsushi Hashio , Shin-ichi Sawada , Masami Tatsumi
发明人： Katsushi Hashio , Shin-ichi Sawada , Masami Tatsumi
IPC分类号： C30B15/00 , C30B15/22 , C30B15/30 , C30B23/00
CPC分类号： C30B15/00 , C30B15/22 , C30B15/305 , C30B29/42 , Y10S117/90 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1016 , Y10T117/1032
摘要： According to the present invention, in the growth of an oxide single crystal or a compound semiconductor single crystal such as GaAs single crystal by the CZ method or LEC method, the tendency of concave solid-liquid interface shape at the periphery of the growing crystal can be suppressed to prevent polycrystallization without localized heating of the solid-liquid interface, while controlling the diameter of the growing crystal even when using a crucible with a larger diameter, thus improving the yield of crystal on a commercial scale. In the invention, the end of a cylindrical body having an inner diameter of larger than the predetermined diameter of straight part of the growing crystal is immersed in the raw material melt or liquid encapsulant and the crystal is pulled while preventing the shape of the solid-liquid interface from becoming concave by controlling the rotation rate of at least one of a crucible holding the raw material melt, the growing crystal and cylindrical body.
摘要翻译：根据本发明，在通过CZ法或LEC法生长氧化物单晶或化合物半导体单晶如GaAs单晶时，生长晶体周围的凹固体 - 液体界面形状的倾向可以被抑制以防止多结晶，而不会局部加热固 - 液界面，同时即使在使用具有较大直径的坩埚时也控制生长晶体的直径，从而以商业规模提高了晶体的产率。在本发明中，将内径大于生长晶体的直线部分的预定直径的圆筒体的端部浸渍在原料熔融液体或液体密封剂中，并且拉伸晶体，同时防止固体 - 液体界面通过控制保持原料熔体，生长晶体和圆柱体的坩埚中的至少一个的旋转速率而变得凹陷。

6. 发明授权

US5733371A Apparatus for growing a single crystal 失效
标题翻译：用于生长单晶的装置
公开(公告)号：US5733371A
公开(公告)日：1998-03-31
申请号：US616350
申请日：1996-03-15
申请人： Katsushi Hashio , Shin-ichi Sawada , Masami Tatsumi
发明人： Katsushi Hashio , Shin-ichi Sawada , Masami Tatsumi
IPC分类号： C30B15/00 , C30B15/22 , C30B15/30 , C30B35/00
CPC分类号： C30B15/00 , C30B15/22 , C30B15/305 , C30B29/42 , Y10S117/90 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1016 , Y10T117/1032
摘要： According to the present invention, in the growth of an oxide single crystal or a compound semiconductor single crystal such as GaAs single crystal by the CZ method or LEC method, the tendency of concave solid-liquid interface shape at the periphery of the growing crystal can be suppressed to prevent polycrystallization without localized heating of the solid-liquid interface, while controlling the diameter of the growing crystal even when using a crucible with a larger diameter, thus improving the yield of crystal on a commercial scale. In the invention, the end of a cylindrical body having an inner diameter of larger than the predetermined diameter of straight part of the growing crystal is immersed in the raw material melt or liquid encapsulant and the crystal is pulled while preventing the shape of the solid-liquid interface from becoming concave by controlling the rotation rate of at least one of a crucible holding the raw material melt, the growing crystal and cylindrical body.
摘要翻译：根据本发明，在通过CZ法或LEC法生长氧化物单晶或化合物半导体单晶如GaAs单晶时，生长晶体周围的凹固体 - 液体界面形状的倾向可以被抑制以防止多结晶，而不会局部加热固 - 液界面，同时即使在使用具有较大直径的坩埚时也控制生长晶体的直径，从而以商业规模提高了晶体的产率。在本发明中，将内径大于生长晶体的直线部分的预定直径的圆筒体的端部浸渍在原料熔融液体或液体密封剂中，并且拉伸晶体，同时防止固体 - 液体界面通过控制保持原料熔体，生长晶体和圆柱体的坩埚中的至少一个的旋转速率而变得凹陷。

7. 发明授权

US4634490A Method of monitoring single crystal during growth 失效
标题翻译：生长过程中监测单晶的方法
公开(公告)号：US4634490A
公开(公告)日：1987-01-06
申请号：US679895
申请日：1984-12-10
申请人： Masami Tatsumi , Shin-ichi Sawada , Ryusuke Nakai
发明人： Masami Tatsumi , Shin-ichi Sawada , Ryusuke Nakai
IPC分类号： C30B15/26 , G01N23/207
CPC分类号： C30B15/26 , G01N23/207
摘要： Single crystal during growth is irradiated by an slitted X-ray beam and the diffracted X-ray beam from the crystal is monitored by an image amplifier with a two dimensional manner so that the diffracted X-ray can be monitored by the image amplifier even if there occurs change of the diameter of the crystal. A half portion of the single crystal during growth is irradiated by a slitted X-ray beam and the other half portion of the crystal is irradiated by the X-ray beam over the entire height of the crystal so that the Laue spots of the crystal growth is displayed on one half portion of the display of the image amplifier and a shape of the crystal being pulled up is monitored in another half portion of the display of the image amplifier.
摘要翻译：生长期间的单晶由切割的X射线束照射，并且来自晶体的衍射X射线束以二维方式由图像放大器监测，使得衍射的X射线可被图像放大器监测，即使发生晶体直径的变化。生长期间单晶的一半部分被切割的X射线束照射，并且晶体的另一半部分在晶体的整个高度上被X射线束照射，使得晶体生长的Laue斑点被显示在图像放大器的显示器的一半部分上，并且在图像放大器的显示器的另一半部分中监视被上拉的晶体的形状。

8. 发明授权

US5292487A Czochralski method using a member for intercepting radiation from raw material molten solution and apparatus therefor 失效
标题翻译： Czochralski方法使用一个成员拦截来自原料熔融溶液的辐射及其设备
公开(公告)号：US5292487A
公开(公告)日：1994-03-08
申请号：US865040
申请日：1992-03-31
申请人： Masami Tatsumi , Shin-ichi Sawada
发明人： Masami Tatsumi , Shin-ichi Sawada
IPC分类号： C30B15/14 , B01D9/00
CPC分类号： C30B15/14 , Y10T117/1004 , Y10T117/1008 , Y10T117/1052 , Y10T117/1064 , Y10T117/1068
摘要： A Czochralski method using radiation intercepting members (1, 9) is used for manufacturing a single crystal such as compound semiconductors with a high production yield using a material having a low thermal conductivity or with a small temperature gradient in the pulling direction. In this method, a coracle (6) having an opening is provided in a melt contained in a crucible (3). A first member (1) is positioned on the coracle (6) to intercept heat radiation from the melt. A second member (9) supported by a crystal pulling shaft (8) is positioned on the first member (1) to cover an opening formed at the center of the first member (1). Seeding is performed while heat loss is limited by intercepting the radiation with the first and the second members. After the seeding, a shoulder portion of a single crystal is formed while heat loss is still limited while intercepting the radiation with the members (1, 9). A cylindrical body of the single crystal is pulled by the shaft (8) which also lifts the members(1, 9).
摘要翻译：使用辐射拦截构件（1,9）的切克劳斯基法使用具有低导热性或拉伸方向上的较小温度梯度的材料来制造具有高产率的单晶，例如化合物半导体。在该方法中，在容纳在坩埚（3）中的熔融物中设置具有开口部的楔形物（6）。第一构件（1）定位在楔子（6）上以拦截来自熔体的热辐射。由晶体牵引轴（8）支撑的第二构件（9）定位在第一构件（1）上以覆盖形成在第一构件（1）的中心的开口。在通过用第一和第二构件截取辐射来限制热损失的同时进行播种。播种后，形成单晶的肩部，同时热损失仍然受到限制，同时用构件（1,9）拦截辐射。单晶体的圆筒体被提升构件（1,9）的轴（8）拉动。

9. 发明授权

US5429067A Czochralski method using a member for intercepting radiation from a raw material molten solution 失效
标题翻译： Czochralski方法使用用于截取来自原料熔融溶液的辐射的构件
公开(公告)号：US5429067A
公开(公告)日：1995-07-04
申请号：US181772
申请日：1994-01-14
申请人： Masami Tatsumi , Shin-ichi Sawada
发明人： Masami Tatsumi , Shin-ichi Sawada
IPC分类号： C30B15/14 , C30B15/10
CPC分类号： C30B15/14 , Y10T117/1004 , Y10T117/1008 , Y10T117/1052 , Y10T117/1064 , Y10T117/1068
摘要： A Czochralski method using radiation intercepting members (1, 9) is used for manufacturing a single crystal such as compound semiconductors with a high production yield using a material having a low thermal conductivity or with a small temperature gradient in the pulling direction. In this method, a coracle (6) having an opening is provided in a melt contained in a crucible (3). A first member (1) is positioned on the coracle (6) to intercept heat radiation from the melt. A second member (9) supported by a crystal pulling shaft (8) is positioned on the first member (1) to cover an opening formed at the center of the first member (1). Seeding is performed while heat loss is limited by intercepting the radiation with the first and the second members. After the seeding, a shoulder portion of a single crystal is formed while heat loss is still limited while intercepting the radiation with the members (1, 9). A cylindrical body of the single crystal is pulled by the shaft (8) which also lifts the members (1, 9 ).
摘要翻译：使用辐射拦截构件（1,9）的切克劳斯基法使用具有低导热性或拉伸方向上的较小温度梯度的材料来制造具有高产率的单晶，例如化合物半导体。在该方法中，在容纳在坩埚（3）中的熔融物中设置具有开口部的楔形物（6）。第一构件（1）定位在楔子（6）上以拦截来自熔体的热辐射。由晶体牵引轴（8）支撑的第二构件（9）定位在第一构件（1）上以覆盖形成在第一构件（1）的中心的开口。在通过用第一和第二构件截取辐射来限制热损失的同时进行播种。播种后，形成单晶的肩部，同时热损失仍然受到限制，同时用构件（1,9）拦截辐射。单晶体的圆筒体被提升构件（1,9）的轴（8）拉动。

10. 发明授权

US5725658A Heat-treatment method of groups III-V compound semiconductor materials 失效
标题翻译： III-V族化合物半导体材料的热处理方法
公开(公告)号：US5725658A
公开(公告)日：1998-03-10
申请号：US417773
申请日：1995-04-06
申请人： Shin-ichi Sawada
发明人： Shin-ichi Sawada
IPC分类号： C30B29/40 , C30B29/42 , C30B33/00 , C30B33/02 , H01L21/208 , C30B19/10
CPC分类号： C30B29/40 , C30B33/00
摘要： When a film is formed on a wafer of groups III-V compound semiconductors by heating, slips are formed in the periphery of the wafer because of residual inner stress of the wafer. The quality of an epitaxially grown crystal is damaged by these slips. The residual stress of the wafer is caused by the residual stress generated in an inner part of an ingot at the time of growing a crystal. Therefore, it is an object to prepare a wafer in which no slips are generated when the epitaxial growth is carried out. In order to achieve this object, a method is provided in which; an ingot is heated and cooled in a range between an upper limit temperature T.sub.h, and a lower limit temperature T.sub.1 where the upper limit temperature ranges from more than 800.degree. C. to less than a melting point of a material of the ingot, and the lower limit temperature ranges from more than 800.degree. C. to less than the upper limit temperature T.sub.h. The reciprocating changing between of heating and cooling steps is repeated a plurality of times at a speed A of raising temperature and a speed B of lowering temperature where the speed A of raising temperature is lower than the speed B of lowering temperature. The residual stress is excluded by this heat-treatment method, and, consequently, no slips occur in the peripheral part of a wafer obtained by this invention.
摘要翻译：当通过加热在III-V族化合物半导体的晶片上形成膜时，由于晶片的残余内应力，在晶片周围形成滑移。外延生长的晶体的质量被这些滑移损坏。晶片的残余应力是由于在晶体生长时在锭的内部产生的残余应力引起的。因此，本发明的目的是制备在进行外延生长时不产生滑移的晶片。为了实现该目的，提供了一种方法，其中：将锭在上限温度Th和下限温度T1之间的范围内被加热和冷却，其中上限温度范围从高于800℃到小于锭的材料的熔点，并且下限温度范围从800℃到小于上限温度Th。加热和冷却步骤之间的往复变化在提升温度的速度A和升温速度A低于降低温度B的降低温度的速度A下重复多次。通过该热处理方法不包括残余应力，因此在本发明得到的晶片的周边部分没有发生滑移。

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