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    • 1. 发明授权
    • Method of monitoring single crystal during growth
    • 生长过程中监测单晶的方法
    • US4634490A
    • 1987-01-06
    • US679895
    • 1984-12-10
    • Masami TatsumiShin-ichi SawadaRyusuke Nakai
    • Masami TatsumiShin-ichi SawadaRyusuke Nakai
    • C30B15/26G01N23/207
    • C30B15/26G01N23/207
    • Single crystal during growth is irradiated by an slitted X-ray beam and the diffracted X-ray beam from the crystal is monitored by an image amplifier with a two dimensional manner so that the diffracted X-ray can be monitored by the image amplifier even if there occurs change of the diameter of the crystal. A half portion of the single crystal during growth is irradiated by a slitted X-ray beam and the other half portion of the crystal is irradiated by the X-ray beam over the entire height of the crystal so that the Laue spots of the crystal growth is displayed on one half portion of the display of the image amplifier and a shape of the crystal being pulled up is monitored in another half portion of the display of the image amplifier.
    • 生长期间的单晶由切割的X射线束照射,并且来自晶体的衍射X射线束以二维方式由图像放大器监测,使得衍射的X射线可被图像放大器监测,即使 发生晶体直径的变化。 生长期间单晶的一半部分被切割的X射线束照射,并且晶体的另一半部分在晶体的整个高度上被X射线束照射,使得晶体生长的Laue斑点 被显示在图像放大器的显示器的一半部分上,并且在图像放大器的显示器的另一半部分中监视被上拉的晶体的形状。